A secure quantum key distribution scheme based on variable quantum encoding algorithms

The security of the quantum secret key plays a critical role in quantum communications.Thus far,one problem that still exists in existing protocols is the leakage of the length of the secret key.In this letter,based on variable quantum encoding algorithms,we propose a secure quantum key distribution scheme,which can overcome the security problem involving the leakage of the secret key.Security analysis shows that the proposed scheme is both secure and effective.     

Electric field-induced stress birefringence in layered composites PbZr1-xTixO3/Polycarbonate

Electro-optical composites based on the product of electro-strictive and elasto-optical effects are developed.Layered composites of PbZr 1 x Ti x O 3 and polycarbonate are synthesised.Their electro-optical properties are studied.The nominal transverse electro-optical coefficient of the composite is observed to be about 3.6 times larger than that of LiNbO 3.Experiments and theoretical analyses show that the electro-optical effect of the composite has a strong ’size effect’.With the ratio of thickness/length decreasing or the width of elasto-optical phase increasing,the half-wave electric field intensity increases but the transverse electro-optical coefficient decreases for the layered composite.     

Ultra-low on-resistance high voltage (>600 V) SOI MOSFET with a reduced cell pitch

A low specific on-resistance (R S,on) silicon-on-insulator (SOI) trench MOSFET (metal-oxide-semiconductor-field-effect-transistor) with a reduced cell pitch is proposed.The lateral MOSFET features multiple trenches:two oxide trenches in the drift region and a trench gate extended to the buried oxide (BOX) (SOI MT MOSFET).Firstly,the oxide trenches increase the average electric field strength along the x direction due to lower permittivity of oxide compared with that of Si;secondly,the oxide trenches cause multiple-directional depletion,which improves the electric field distribution and enhances the reduced surface field (RESURF) effect in the SOI layer.Both of them result in a high breakdown voltage (BV).Thirdly,the oxide trenches cause the drift region to be folded in the vertical direction,leading to a shortened cell pitch and a reduced R S,on.Fourthly,the trench gate extended to the BOX further reduces R S,on,owing to the electron accumulation layer.The BV of the MT MOSFET increases from 309 V for a conventional SOI lateral double diffused metal-oxide semiconductor (LDMOS) to 632 V at the same half cell pitch of 21.5 μm,and R S,on decreases from 419 m · cm 2 to 36.6 m · cm 2.The proposed structure can also help to dramatically reduce the cell pitch at the same breakdown voltage.     

Propagation and interaction of ion-acoustic solitary waves in a quantum electron-positron-ion plasma

This paper discusses the existence of ion-acoustic solitary waves and their interaction in a dense quantum electron-positron-ion plasma by using the quantum hydrodynamic equations.The extended Poincar’e-Lighthill-Kuo perturbation method is used to derive the Korteweg-de Vries equations for quantum ion-acoustic solitary waves in this plasma.The effects of the ratio of positrons to ions unperturbation number density p and the quantum diffraction parameter H e (H p) on the newly formed wave during interaction,and the phase shift of the colliding solitary waves are studied.It is found that the interaction between two solitary waves fits linear superposition principle and these plasma parameters have significantly influence on the newly formed wave and phase shift of the colliding solitary waves.The investigations should be useful for understanding the propagation and interaction of ion-acoustic solitary waves in dense astrophysical plasmas (such as white dwarfs) as well as in intense laser-solid matter interaction experiments.     

Transport properties of Pr0.7Ca0.3MnO3/Nb:SrTiO3 heterojunctions

Current–voltage (J–V) characteristics of epitaxial hetero-junctions composed of Pr_0.7Ca_0.3MnO₃ and Nb:SrTiO₃ were studied under forward and reversed bias conditions. Detailed analysis showed that the J–V characteristics of these heterojunctions can be well-fitted by the thermally-assisted tunnelling model. While the dielectric constant of Nb:SrTiO₃ extracted under the forward bias was about one order of magnitude smaller than that of bulk SrTiO₃, the value obtained under reverse bias was very close to that of the bulk SrTiO₃. The result can be explained by the existence of an interface layer on the Nb:SrTiO₃ substrate with a smaller effective dielectric constant. The current finding suggested that the properties of interface layer should be taken into account in order to accurately simulate the J–V characteristics of such heterojunctions.     

Widely tunable fourth harmonic generation of a Ti:sapphire laser based on RBBF crystal

Fourth harmonic generation of a tunable Ti:sapphire laser with a repetition rate of 80?MHz and pulse duration ??150 fs has been realized in a single pass with an RbBe₂BO₃F₂ crystal for the first time. A high average power was obtained which was tunable throughout a wide range from 180 to 232.5?nm. The output power over the whole range exceeded 2?mW, the highest being 43.3?mW at 202.5?nm. Moreover, deep-ultraviolet output with powers above 75?mW was obtained at 193.5 and 200?nm under a stronger focusing condition. This is the first attempt at the generation of tunable deep-ultraviolet light without using a KBBF crystal, which is very difficult to grow due to its strong layering tendency, and our attempt may provide new opportunities for the development of all-solid-state deep-ultraviolet coherent light sources.     

基于叶绿素荧光光谱分析的黄瓜霜霉病害预测模型

为了实现对黄瓜病害的快速无损准确预测,基于激光诱导叶绿素荧光光谱分析技术,建立了温室黄瓜霜霉病害的预测模型.通过测定健康叶片、病菌接种3d叶片和接种6d叶片的光谱曲线,采用一阶导数光谱预处理方法,结合主成分分析数据降维方法对三组光谱数据进行特征信息提取后,建立主成分得分散点图,依据累积贡献率选取10个主成分代替导数光谱...     

对巯基苯胺分子表面增强拉曼光谱的密度泛函理论研究

采用密度泛函理论(density functional theory,DFT),在B3LYP/6-31++-G** (C,H,N,S)/LANL2DZ(Ag)水平上,对对巯基苯胺(p-aminothiophenol,PATP)分子进行了几何结构优化,计算了 PATP的常规拉曼散射(normal Raman scatte...     

松材线虫自然侵染后松树不同感病阶段针叶光谱特征变化

采用ASD野外光谱仪测量了黑松和马尾松在松材线虫自然侵染后不同感病阶段的反射光谱,分析了其中光谱特征参数及叶绿素变化情况.研究表明:(1)中红外波段反射光谱曲线对松树发病初期有一定的指示作用;(2)红边位置、绿峰高度、红谷反射率、红边斜率、水分胁迫波段反射率等参数的动态变化趋势与松材线虫侵染后两种松树的病害特征是一致的;(3)随病害程度加深两种松树叶绿素含量逐渐降低,且与光谱特征参数之间存显著线性关系.研究结果为利用高光谱遥感技术进行松材线虫病监测与预警提供参考,同时为针对不同发病阶段采用不同的措施治理松材线虫病提供新的实验依据.     

氮化镓基发光二极管结构中粗化 p型氮化镓层的新型生长方法

提出了一种新型p型氮化镓粗化外延生长方法,这种生长方法的本质特征是利用低温生长的p型氮化镓作为粗化层的"晶籽"层,然后在这一层的基础上高温快速生长p型氮化镓,使粗化程度得到放大. 经实际制作尺寸为12 mil×10 mil的蓝光发光二极管器件并进行验证测试,与未进行p型氮化镓粗化的结果相比,通过这种方法粗化的发光二极管光通量可提升45%;结果同时表明,该方法有效解决了低温生长p型氮化镓带来的漏电流大,及预通镁源带来的前置电压高的问题. 关键词： 粗化 氮化镓 p型氮化镓 发光二极管