| 氮化镓基发光二极管结构中粗化 p型氮化镓层的新型生长方法 |
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| 引用本文： | 李水清,汪菜,韩彦军,罗毅,邓和清,丘建生,张洁.氮化镓基发光二极管结构中粗化 p型氮化镓层的新型生长方法[J].物理学报,2011,60(9):98107-098107. |
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| 作者姓名： | 李水清 汪菜 韩彦军 罗毅 邓和清 丘建生 张洁 |
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| 作者单位： | (1)清华大学电子工程系,集成光电子学国家重点实验室/清华信息科学与技术国家实验室(筹),北京 100084; (2)厦门市三安光电科技有限公司,厦门 361009; (3)厦门市三安光电科技有限公司,厦门 361009;清华大学电子工程系,集成光电子学国家重点实验室/清华信息科学与技术国家实验室(筹),北京 100084 |
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| 基金项目： | 国家重点基础研究发展计划(973)(批准号:2011CB301902, 2011CB301903),国家自然科学基金(批准号:60723002, 50706022, 60977022, 51002085),国家高技术研究发展计划(863)(批准号:2007AA05Z429, 2008AA03A194)和北京市自然科学基金(批准号:4091001)资助的课题. |
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| 摘 要： | 提出了一种新型p型氮化镓粗化外延生长方法,这种生长方法的本质特征是利用低温生长的p型氮化镓作为粗化层的"晶籽"层,然后在这一层的基础上高温快速生长p型氮化镓,使粗化程度得到放大. 经实际制作尺寸为12 mil×10 mil的蓝光发光二极管器件并进行验证测试,与未进行p型氮化镓粗化的结果相比,通过这种方法粗化的发光二极管光通量可提升45%;结果同时表明,该方法有效解决了低温生长p型氮化镓带来的漏电流大,及预通镁源带来的前置电压高的问题.
关键词：
粗化
氮化镓
p型氮化镓
发光二极管
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| 关 键 词： | 粗化 氮化镓 p型氮化镓 发光二极管 |
| 收稿时间： | 2010-12-07 |
A new growth method of roughed p-GaN in GaN-based light emitting diodes |
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| Li Shui-Qing,Wang Lai,Han Yan-Jun,Luo Yi,Deng He-Qing,Qiu Jian-Sheng and Zhang Jie.A new growth method of roughed p-GaN in GaN-based light emitting diodes[J].Acta Physica Sinica,2011,60(9):98107-098107. |
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| Authors: | Li Shui-Qing Wang Lai Han Yan-Jun Luo Yi Deng He-Qing Qiu Jian-Sheng and Zhang Jie |
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| Institution: | Xiamen Sanan Optoelectronics Co. Ltd., Xiamen 361009, China;Tsinghua National Laboratory for Information Science and Technology/State Key Lab on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China;Tsinghua National Laboratory for Information Science and Technology/State Key Lab on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China;Tsinghua National Laboratory for Information Science and Technology/State Key Lab on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China;Tsinghua National Laboratory for Information Science and Technology/State Key Lab on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China;Xiamen Sanan Optoelectronics Co. Ltd., Xiamen 361009, China;Xiamen Sanan Optoelectronics Co. Ltd., Xiamen 361009, China;Xiamen Sanan Optoelectronics Co. Ltd., Xiamen 361009, China |
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| Abstract: | A new growth method of roughed p-GaN has been demonstrated in this paper. First, some crystal seeds of p-GaN are obtained by utilizing low-temperature growth. Then, a p-GaN high-temperature expitaxy layer is grown on it subsequently with a fast growth rate, which will enlarge the roughness degree. Compared with the luminous flux of the conventional light emitting diode with flat p-GaN, the luminous flux is improved by 45%. Meanwhile, it is found that the problems of large reverse current and high forward bias aroused by the low-temperature epitaxy are also solved. |
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| Keywords: | surface roughness GaN p-GaN LED |
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