Optimization of Metamorphic InGaAs Quantum Wells on GaAs Grown by Molecular Beam Epitaxy

We investigate the molecular beam epitaxy growth of metamorphic InxGal-xAs materials （x up to 0.5） on GaAs substrates systematically. Optimization of structure design and growth parameters is aimed at obtaining smooth surface and high optical qualdty. The optimized structures have an average surface roughness of 0.9-1.8 nm. It is also proven by PL measurements that the optical properties of high indium content （55%） InGaAs quantum wells are improved apparently by defect reduction technique and by introducing Sb as a surfactant. These provide us new ways for growing device quality metamorphic structures on GaAs substrates with long-wavelength emissions.     

Noncontinuous Solitary Wave Solutions for Double sine-Gordon Equation

Using the tanh method and a variable separated ordinary difference equation method to solve the double sineGordon equation, we derive some new exact travelling wave solutions, especially a new type of noncontinuous solitary wave solutions. These noncontinuous solitary wave solutions are verified by using the conservation law theory.     

GaN MOS-HEMT Using Ultra-Thin A1203 Dielectric Grown by Atomic Layer Deposition

We report a GaN metal-oxide-semiconductor high electron mobility transistor （MOS-HEMT） with atomic layer deposited （ALD） Al2O3 gate dielectric. Based on the previous work [Appl. Phys. Lett. 86 （2005） 063501] of Ye et al. by decreasing the thickness of the gate oxide to 3.5nm and optimizing the device fabrication process, the device with maximum transconductance of 150mS/mm is produced and discussed in comparison with the result of lOOmS/mm of Ye et al. The corresponding drain current density in the 0.8-μm-gate-length MOS-HEMT is 800mA/mm at the gate bias of 3.0 V. The gate leakage is two orders of magnitude lower than that of the conventional A1GaN/GaN HEMT. The excellent characteristics of this novel MOS-HEMT device structure with ALD Al2O3 gate dielectric are presented.     

Gain Measurement and Anomalous Decrease of Peak Gain at Long Wavelength for InAs/GaAs Quantum-Dot Lasers

Mode gain spectrum is measured by the Fourier series expansion method for InAs/GaAs quantum-dot （QD） lasers with seven stacks of QDs at different injection currents. Gain spectra with distinctive peaks are observed at the short and long wavelengths of about 1210nm and 1300nm. For a QD laser with the cavity length of 1060μm, the peak gain of the long wavelength first increases slowly or even decreases with the injection current as the peak gain of the short wavelength increases quickly, and finally increases quickly before approaching the saturated values as the injection current further increases.     

基于多孔径闪烁的湍流强度廓线反演方法研究

以多孔径闪烁方法的理论为基础,分别讨论了孔径滤波函数和光谱响应函数对权重函数的影响.根据包括边界层项的Hufnagel-Valley 5/7模型得到的闪烁指数,采用奇异值分解法反演了垂直方向的湍流强度廓线,结果的量级介于10~(-15)~10~(-17)之间,并随高度的增加不断减小,在量级和趋势上与理论模型基本一致;同时结合Shack-Hartman的实际测量结果,反演了水平方向1 km传输路径上的湍流强度分布状况.水平方向反演结果的量级在10~(-14)~10~(-15)之间,随传播距离的变化趋势与实验场地的实际情况较为符合,随时间的变化趋势与合肥地区同期的统计结果基本一致.     

HNO与（HF）1≤n≤3分子间的蓝移与红移氢键

运用量子化学从头算方法研究了HNO与分子簇(HF)1≤n≤3形成的蓝移与红移氢键.在这些体系中,F…H-N都是蓝移氢键,重极化与重杂化和分子内超共轭导敛了氰键的蓝移;所有的X…H-F(X=O,N,F)氢键都是红移的,分子问超共轭导致了氢键的红移.在多分子体系形成的氢键链中,分子问超共轭作用呈现规律性递变,它导致了氢键强度与频率位移的规律性变化,电子密度拓扑分析结果反映和支持了这种规律性变化.     

水／离子液体两相体系中出芽短梗霉催化4-氯-乙酰乙酸乙酯不对称还原合成（S）-4-氯-3-羟基-丁酸乙酯

考察了水/离子液体两相体系中出芽短梗霉(Aureobasidium pullulansCGMCC1244)催化4-氯乙酰乙酸乙酯(COBE)不对称还原生成光学活性(S)-4-氯-3-羟基丁酸乙酯((S)-CHBE)的性能,并对反应条件如摇床转速、相体积比、温度、初始底物浓度和pH值等进行了优化.结果表明,在水/1-丁基-3-甲基咪唑六氟磷酸盐体系中,出芽短梗霉催化COBE不对称还原生成(S)-CHBE,在30℃,pH6·6,摇床转速180r/min和不对称反应8h条件下,反应物的转化率、产物ee值和浓度分别达到95·6%,98·5%和47·1g/L.在控制pH值为6·6的情况下,通过分添加底物可有效提高产物(S)-CHBE浓度至75·1g/L.     

Hassel and Rogers狼与驼鹿模型讨论

分析了连续时间和离散时间的捕食-被捕食模型：Hassel and Rogers的狼与鹿相互作用的模型，发现它们的轨线有一定程度的相似，但从生态意义上讲，离散模型更合适。