基于正弦灰度变换的X光图像增强

介绍了灰度变换法的几种形式 ,提出了一种正弦非线性变换法 ,对三幅数字X光医学图像进行了处理 ,获得了令人满意的对比度增强效果 ,证明该方法有效而实用     

三阶泛函微分方程的周期解的存在性

本文利用重合度理论研究了一类三阶泛函微分方程方程的2π-周期解的问题,获得了该方程存在2π-周期解的若干新结论,改进推广了有关文献中的已有结果．     

区间数互补判断矩阵的拓扑排序方法

提出了方案之间进行比较时优于与劣于的定义,通过构造与区间数互补判断矩阵相对应的有向图的方法,将互补判断矩阵的排序问题转化为有向图中顶点的拓扑排序问题,将有向图中的顶点按照备选方案的重要性顺序输出,得到的顶点的序列即为备选方案的重要性排序,数值计算实例验证了该方法的有效性与可行性。     

中物院远红外自由电子激光实验研究

中国工程物理研究院基于射频直线加速器技术的远红外自由电子激光(FIR-FEL)实验取得阶段性进展,于2005年3月24晚8时30分首次出光, 并多次重复. 中心波长115μm, 谱宽1%.介绍了实验系统的主要组成部分和主要实验结果.     

Tokamak中自举电流的剖面准直性

利用Harris模型,通过求解等离子体平衡方程,计算俘获粒子份额,分别对常规剪切和中心负剪切下tokamak中的自举电流的大小和剖面准直性进行了计算和分析.自举电流分布与等离子体平衡电流分布之间的剖面准直性可以通过调整等离子体的密度、温度和电流分布参数,以及描述等离子体形状的拉长度k和三角变形因子d来获得.中心负剪切位形有利于自举电流产生,并有好的剖面准直性.通过计算比较,分别在常规剪切位形下和中心负剪切位形下获得了一组优化的等离子体参数,在这组参数下,自举电流有较大的份额和好的剖面准直性 关键词： tokamak 自举电流 剖面准直性     

PbWO4晶体空位型缺陷电子结构的研究

采用基于密度泛函理论的相对论性离散变分和嵌入团簇方法计算了PbWO4晶体中与氧空位和铅空位相关缺陷的态密度分布,并运用过渡态方法计算了其激发能.结果表明:PbWO4晶体中WO3+VO缺陷的O2p→W5d跃迁可引起350nm和420nm附近的吸收,并且发现VPb的存在可以使WO42基团的禁带宽度明显变小 关键词： PbWO4晶体 密度泛函 氧空位和铅空位 态密度分布     

阵列幅相误差条件下的目标方位估计

本文研究了一种改进的MUSIC法，可在一定阵列幅相误差条件下对多目标实现高分辨方位估计，有效地改善了原算法的参数估计性能，具有稳健性高、适用范围广以及工程实现简单等特点，通过大量的计算机仿真和水池实验表明，该方法具有较好的多目标分辨能力和方位估计精度，工程应用前景良好。     

The Level-split of the Two-level Entangled Atom in an Optical Field

The behavior of a two-level entangled atom in an optical field with circular polarization is studied in this paper. The interaction of an optical field and one of the entangled atoms is analyzed in detail. A general solution of the SchrAo¨Gdinger equation about the motion of the entangled atom is obtained. The properties of the action are dependent on the initial state of the atom. By detecting the entangled atom out of the field, we can obtain the state of the other atom moving in the field. It is shown that the state of the atom out of the field will influence the energies of the split-levels of the atom in the field.     

Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

The effects of Si doping on the structural and electrical properties of Ge₂Sb₂Te₅ film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge₂Sb₂Te₅ film. The addition of Si in the Ge₂Sb₂Te₅ film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge₂Sb₂Te₅ film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge₂Sb₂Te₅ film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory.     

~ Transform Demonstration of Dark Soliton Solutions Found by Inverse Scattering

One of the basic problems about the inverse scattering transform for solving a completely integrable nonlinear evolutions equation is to demonstrate that the Jost solutions obtained from the inverse scattering equations of Cauchy integral satisfy the Lax equations. Such a basic problem still exists in the procedure of deriving the dark soliton solutions of the NLS equation in normal dispersion with non-vanishing boundary conditions through the inverse scattering transform. In this paper, a pair of Jost solutions with same analytic properties are composed to be a 2 × 2 matrix and then another pair are introduced to be its right inverse confirmed by the Liouville theorem. As they are both 2 × 2 matrices, the right inverse should be the left inverse too, based upon which it is not difficult to show that these Jost solutions satisfy both the first and second Lax equations. As a result of compatibility condition, the dark soliton solutions definitely satisfy the NLS equation in normal dispersion with non-vanishing boundary conditions.