Angular and NiFe thickness dependence of exchange bias in IrMn/NiFe/IrMn thin film

Exchange biased IrMn/NiFe/IrMn thin films were studied as a function of NiFe thickness. In plane angular dependence of a resonance field distribution which is measured by FMR was analyzed as a combined effect of an unidirectional anisotropy and an uniaxial anisotropy. The unidirectional anisotropic field and the uniaxial anisotropic field were linearly varied with NiFe thickness while the films with a thicker NiFe layer do not follow the linear variation. Resonance field and linewidth variations were also analysed with NiFe thickness.     

线性递归序列模q

设{u_k}_k≥0为一个线性递归序列．序列{u_k(mod q)}_(k≥0)是周期的,很多人都对其周期有过研究．本文应用二次数域中理想的理论,较完全地刻面了二次线性递归序列模q的周期长度,所获结果加强并推广了Engstrom及Wall的结论．     

一种新的磷化铟复合沟道高电子迁移率晶体管小信号物理模型

针对磷化铟(InP)复合沟道高电子迁移率晶体管(HEMT)的特点，对常规单沟道HEMT的小信号物理模型进行了修正，提出了一种新的用于复合沟道HEMT的小信号物理模型，用商用器件模拟软件ISE(integrated systems engineering)对其进行了仿真验证，对比了实测和仿真的I-V特性及转移特性曲线，重点研究了在InGaAs/InP双层沟道中考虑量子效应后的电场和电流密度随着不同栅电压的变化趋势，研究结果表明，由于在沟道中存在量子效应，在栅下靠源端低电场区域，电流主要分布在InGaAs沟道 关键词： 高电子迁移率晶体管 复合沟道 物理模型 磷化铟     

排列形状及阵列数目对纳米导线阵列场发射性能的影响

为了进一步研究纳米导线阵列的排列形状以及阵列数目对其场发射行为的影响，利用镜像悬浮球模型对正方形以及六边形排列的纳米导线阵列的场发射行为进行计算与模拟，近似的得到纳米导线阵列的场发射增强因子满足如下的变化趋势：β=h/ρ(1/1+W)+1/2(1/1+W)²+3,其中h为纳米导线的高度，ρ为纳米导线的半径，W是以R为自变量的函数，R为纳米导线阵列的间距.结果显示纳米导线阵列的排列形状对其场发射性能的影响较小，而阵列间距则是影响场发射性能的关键因素：当R<R₀时，场发射增强因子随着阵列间距的减小而急剧减小；当R>R₀时，场发射增强因子基本不变，其中R₀为导线阵列场发射的最佳间距.进一步研究表明改变纳米导线阵列的数目基本不会改变阵列的场发射性能随间距的变化趋势，但是随着阵列数目的增加，R₀会有一定程度的减小，场发射增强因子也会降低. 关键词： 纳米导线 场发射 增强因子 阵列数目     

SiO2-羟基表面上金属原子的第一性原理研究

采用第一性原理方法研究了SiO2-羟基表面上几种金属原子的吸附性质,发现In和Ga在SiO2-羟基表面上的结合很弱,而Fe,Co,Ni在该表面上与Si,O形成强的化学键.等势能面和扩散势垒计算表明In(Ga)的扩散激活能只有0.1-0.3 eV,表明这两种原子容易在表面上扩散.这些结果可以定性地解释纳米合成中的一些实验现象.     

Flat-top interleavers with chromatic dispersion compensator based on phase dispersive free space Mach-Zehnder interferometer

In this paper, novel interleavers using circular cavities (CC) in a Mach-Zehnder interferometer (MZI) has been presented and demonstrated for the first time, in which CCs act as phase dispersive mirrors which exhibit a periodic dependence on the frequency of light. Three implementation schemes have been proposed and investigated. Theoretical analysis shows the spectral characteristics of each scheme in a 50-GHz channel spacing application. Furthermore, the chromatic dispersion (CD) of each output comb can be flattened within passband by appending an additional CC. The result shows that the proposed designs with novel interferometer technique can simultaneously provide flat top passbands, high isolation stopband and low CD value as well.     

无催化纳米氧化锌的制备及其光学性质研究

本文采用无催化剂直接蒸发高纯Zn粉,在800℃氧气氛条件下,在Si(111)衬底上生长得到以四角状为主的纳米ZnO(T-ZnO)。T-ZnO纳米线每个角约互成110°,长度约为1.5μm,直径100nm左右;Raman分析表明E2(H)普遍存在于各形态的ZnO;光致发光光谱表明,T-ZnO纳米线的光致发光除了与材料性质有关,还与杂质缺陷有关,蓝绿光带是ZnO的缺陷产生的。     

A solar radio moving type IV burst of expanding arches type involving multi-sources

A complex solar radio moving type IV burst was observed on 23 September 1998 with the broadband (1.0–2.0 GHz and 2.6–3.8 GHz) spectrometers with high temporal and spectral resolutions at National Astronomical Observatories of China (NAOC). Comparing to the high spatial resolution data of Siberian Solar Radio Telescope (SSRT), we find that this burst is a rare type of moving type IV burst which is caused by the expanding arches, and the spatial structure oscillations of the radio sources are related with the time structure pulsations of the radio emission. Furthermore, the burst is associated with the multiple quasi-periodic long-term pulsations, and this suggests the existence of multi-scale magnetic structures in a large expanding coronal arch. We think the moving type IV burst is due to the synchrotron emission of the energetic electrons trapped in the expanding arch, and the multiple quasi-periodic pulsations are due to the second harmonic plasma emission.     

Effects of nickel on the crystallization of Zr70Cu20Ni10 amorphous alloy

Differential scanning calorimetry (DSC) and x-ray diffraction (XRD) are employed to investigate the effects of nickel on the crystallization of the amorphous Zr₇₀Cu₂₀Ni₁₀ alloy. We have found that the crystallization process of the amorphous Zr₇₀Cu₂₀Ni₁₀ alloy is strongly influenced by the addition of nickel. Addition of 10 at% Ni to the Zr₇₀Cu₃₀ amorphous alloy makes the crystallization process proceed from a single-stage mode to a double-stage mode. The activation energy for crystallization of the amorphous Zr₇₀Cu₂₀Ni₁₀ alloy is calculated to be about 388kJ·mol^-1 on the basis of the Kissinger equation. The effects of nickel on the crystallization of the amorphous Zr₇₀Cu₂₀Ni₁₀ alloy are discussed in terms of the genetics of metals.     

软门限去噪法在X射线能谱分析中的应用

从函数空间的剖分和理想滤波器组的角度分析了多分辨率信号的分解与重构，提出了一种X射线能谱去噪的方法，即应用Mallat算法对谱信号进行小波分解，然后应用一个非线性软门限函数在小波域内将噪声抑制和消除，最后重构得到去噪后的能谱。该方法明显改善了能谱定量分析的结果。