高阻隔碳氢膜的制备及性能研究

利用射频等离子体化学气象沉积法（r.f.PECVD），在12μm厚的聚对苯二甲酸乙二醇酯 (PET)上制备了碳氢膜. 用原子力显微镜（AFM），x射线光电子能谱（XPS），激光拉曼光谱，傅里叶红外光谱等仪器，对碳氢膜的表面形貌和内部结构特性进行了较详细研究. 镀碳氢膜PET的阻隔性能在标准透水蒸气测试仪上进行检测. 实验结果证明：沉积工艺参数对碳氢膜的生长速率及结构性能有重要影响；在PET上沉积的是纳米碳氢膜，该膜主要由sp2和sp3杂化的碳氢化合物组成；当PET上碳氢膜厚度为900nm时，阻水蒸气性能可提高7倍. 关键词： 碳氢膜 射频等离子体化学气象沉积法 聚对苯二甲酸乙二醇酯 阻隔性能     

A cold plasma plume with a highly conductive liquid electrode

A cold dielectric barrier discharge （DBD） plasma plume with one highly conductive liquid electrode has been developed to treat thermally sensitive materials, and its preliminary discharging characteristics have been studied. The averaged electron temperature and density is estimated to be 0.6eV and 1011/cm3, respectively. The length of plasma plume can reach 5cm with helium gas （He）, and the conductivity of the outer electrode affects the plume length obviously. This plasma plume could be touched by bare hand without causing any burning or painful sensation, which may provide potential application for safe aseptic skin care. Moreover, the oxidative particles （e.g., OH, O＊, 03） in the downstream oxygen （02） gas of the plume have been applied to treat the landfill leachate. The results show that the activated 02 gas can degrade the landfill leachate effectively, and the chemical oxygen demand （COD）, conductivity, biochemical oxygen demand （BOD）, and suspended solid （SS） can be decreased by 52%, 57%, 76% and 92%, respectively.     

电解等离子体法制备Al2O3陶瓷层及其特性研究

利用电弧喷铝并重熔后进行电解等离子体处理(EPP)的方法在Q235钢基体上制备出呈冶金结合的Al2O3陶瓷层.利用XRD,SEM和EDS等手段对陶瓷层的成分和显微组织进行了分析,测定了陶瓷层的耐蚀性能和耐磨性能.实验结果表明,陶瓷层主要由α-Al2O3,γ-Al2O3,θ-Al2O3以及一些非晶相组成,组织致密,耐蚀性能和耐磨性能良好.     

Preparation and Microstructure of Tantalum Nitride Thin Film by Cathodic Arc Deposition

Tantalum nitride （TAN） thin films are achieved on Si（111） and SS317L substrates by cathodic vacuum arc technique, which is rarely reported in the literature. The crystal structure, composition and surface morphology of the films are characterized by x-ray diffraction （XRD）, x-ray photoelectron spectroscopy （XPS）, auger electron spectroscopy, and atomic force microscopy, respectively. The influence of substrate negative bias on crystal structure, composition, surface morphology of the TaN films is systematically studied. At the substrate bias of 0 V and -50 V, the amorphous TaN film is obtained. As the bias increases to -100 V, cubic TaN phase can be found. Stoichiometric TaN with hexagonal lattice preferred （300） orientation is prepared at a bias of -200 V. Combine the XRD and XPS results, the binding energy value of 23.6eV of Ta 4f（7/2） is contributed to hexagonal TaN. Compared to other techniques, TaN thin films fabricated by cathodic vacuum arc at various substrate biases show different microstructures.     

脉冲高能量密度等离子体沉积(Ti,Al)N薄膜组织及其性能研究

利用脉冲高能量密度等离子体技术在室温条件下在45＃钢基材表面沉积了高硬度耐腐蚀(Ti, Al)N薄膜. 利用扫描电子显微镜、X射线衍射、X射线光电子能谱、俄歇电子能谱分析了薄膜的显微组织.利用纳米压痕仪测试了薄膜的纳米硬度.测试了薄膜在05mol/L H2SO4水溶液中的耐蚀性. 测试结果表明：薄膜主要组成相为(Ti, Al)N，同时含有少量的AlN,薄膜的纳米硬度高达26 GPa,薄膜具有良好的耐蚀性，与1Cr18Ni9Ti奥氏体不锈钢相比，耐蚀性提高了一个数量级. 关键词： 脉冲高能量密度等离子体 薄膜 纳米硬度 耐蚀性