电磁波与复合材料板上传输线的耦合分析

利用单层均匀模型等效非均匀碳纤维复合材料,获得等效电磁参数,进而采用基于全波分析方法的仿真软件研究了碳纤维的排列方向以及入射波参数对传输线终端负载感应电流的影响。结果表明,当导线与碳纤维方向平行时,其场线耦合规律与同电导率导电板上的场线耦合变化规律基本一致,且负载感应电流大于导线与碳纤维正交时的感应电流。当电磁波垂直于复合材料板入射时,负载感应电流大于同等条件下电磁波平行入射时的感应电流。     

基于JASMIN的并行CP-FDTD建模与屏蔽效能评估应用

时域有限差分(FDTD)中采用环路法(CP)进行复杂金属细缝结构建模,可突破细缝结构对空间步长的约束而大大减少计算资源的消耗。提出CP-FDTD在大规模并行化平台的建模方法,通过对工程金属细缝结构自动建模以及对CP算法的自动适配,实现CP-FDTD的并行化处理。利用所开发的并行CP-FDTD算法分析了开不同工程细缝金属腔在0.05~3.00 GHz内的电磁屏蔽效能,结果表明所开发的具有金属细缝建模功能的并行化CP-FDTD自动适配处理技术,与加密网格的传统FDTD(fine-FDTD)计算结果吻合良好,且计算效率显著提升。     

熔盐法制备高性能铌酸钾钠无铅压电陶瓷

用熔盐法合成铌酸钾钠(Na0.52K0.48NbO3,N52K48N)陶瓷粉体,用传统固相烧结工艺制备N52K48N陶瓷.研究了熔盐含量和烧结温度对N52K48N陶瓷粉体及其所制备陶瓷的相结构、微观形貌及电学性能的影响.结果发现,熔盐法在750℃就合成了单一钙钛矿结构的N52K48N陶瓷粉体;随熔盐含量增加,N52K48N陶瓷粉体粒径增大,粉体团聚现象明显减弱.当熔盐与反应物质量之比为1∶5,烧结温度T=1050℃时,所制备的N52K48N陶瓷具有优异的电学性能:压电常数d33=137 pC/N,机电耦合系数kp=32.6;,居里温度Tc=410℃,表明熔盐法是一种很有前途的铌酸钾钠陶瓷制备方法.     

ZnCuInS/ZnS量子点与Poly-TPD补偿发光光谱的研究

ZnCuInS/ZnS量子点是一种无重金属、“绿色”半导体纳米材料。在研究中,制备出尺寸为3.2 nm的ZnCuInS/ZnS核壳量子点,并说明它是施主-受主对复合发光。通过测量ZnCuInS/ZnS量子点的光致发光光谱,其发射峰值波长为620 nm、半宽度是95 nm的红光。同时,还制备出Poly-TPD有机薄膜,其发光光谱是峰值波长为480 nm的蓝光。所以,ZnCuInS/ZnS量子点和Poly-TPD发光颜色具有互补性。在ZnCuInS/ZnS量子点薄膜层上包覆一层poly-TPD薄膜后,二者发光颜色互补。在恰当的偏置电压下,可以得到较好的白光光谱。计算表明,其色坐标是(0.336,0.339),颜色指数是92。     

HIRFL-CSR六极磁铁数字电源研究与设计

设计了一台用于兰州重离子加速器HIRFL-CSR的六极磁铁数字电源, 该电源以H桥变换器为主拓扑结构电路, 采用Cyclone II FPGA作为核心硬件, 以Verilog语言实现了全数字化的PI调节算法。 电源输出电流达到了340 A, 直流电流稳定度达到了3.14×10-5, 达到了1×10-4的设计指标。One digital power supply was designed for the sextupole magnets of Cooler Storage Ring of the Heavy Ion Research Facility in Lanzhou (HIRFL CSR). It adopts H Bridge convertor as the main topology circuit and Cyclone II FPGA as the main hardware, and has realized fully digitized PI regulation arithmetic by Verilog language. The peak current of the power supply reaches 340 A and the stability approaches 3.14×10-5. Finally the power supply has achieved the designed specification of 1×10-4.     

Two-dimensional multiplicity fluctuation analysis of target residues in nuclear collisions

Multiplicity fluctuation of the target residues emitted in the interactions in a wide range of projectile energies from 500 A MeV to 60 A GeV is investigated in the framework of two-dimensional scaled factorial moment methodology.The evidence of non-statistical multiplicity fluctuation is found in 16 O-AgBr collisions at 60 A GeV,but not in 56 Fe-AgBr collisions at 500 A MeV,84 Kr-AgBr collisions at 1.7 A GeV,16 O-AgBr collisions at 3.7 A GeV and 197 Au-AgBr collisions at 10.7 A GeV.     

逐次Ⅰ型混合截尾下基于FGM copula的应力强度模型可靠性估计

在逐次Ⅰ型混合截尾样本下,研究具有相关性应力-强度模型的可靠性.假设应力和强度分布为参数不同的指数分布,选用FGM copula作为连接函数构造联合分布,得到参数和可靠度的极大似然估计(MLEs)、贝叶斯估计和对应渐近置信区间、HPD置信区间.通过Monte Carlo模拟方法,获得不同样本量不同截尾方案下估计值的数值...     

赤泥黑色玻璃结构的研究

利用穆期堡尔谱（Ｍｏｓｓｂａｕｅｒ）和红外吸收光谱技术对赤泥黑色玻璃的结构进行了研究。结果表明：玻璃中有处于八面体两种不同配位位置的Ｆｅ＾２＋及处于四面体和八面体两种配位位置的Ｆ＾３＋。玻璃网络中主要有ＳｉＯ４、ＡｌＯ４及Ｆｅ＾３＋Ｏ４四面体结构单元,Ｋ＾＋、Ｎａ＾＋、Ｆｅ＾２＋及部分Ｆｅ＾３＋处于维持电荷平衡位置。随Ｆｅ２Ｏ３含量增加,玻璃中Ｆｅ＾２＋相对含量增加,网络无序度增大,玻璃红外吸收谱     

Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO

The interface properties and electrical characteristics of the n-type 4H-SiC planar and trench metal–oxide–semiconductor(MOS) capacitors are investigated by measuring the capacitance voltage and current voltage. The flat-band voltage and interface state density are evaluated by the quasi-static method. It is not effective on further improving the interface properties annealing at 1250℃ in NO ambient for above 1 h due to the increasing interface shallow and fast states.These shallow states reduce the effective positive fixed charge density in the oxide. For the vertical MOS capacitors on the(1120) and(1100) faces, the interface state density can be reduced by approximately one order of magnitude, in comparison to the result of the planar MOS capacitors on the(0001) face under the same NO annealing condition. In addition, it is found that Fowler–Nordheim tunneling current occurs at an oxide electric field of 7 MV/cm for the planar MOS device.However, Poole–Frenkel conduction current occurs at a lower electric field of 4 MV/cm for the trench MOS capacitor. This is due to the local field crowded at the trench corner severely causing the electrons to be early captured at or emitted from the SiO_2/Si C interface. These results provide a reference for an in-depth understanding of the mobility-limiting factors and long term reliability of the trench and planar SiO_2/Si C interfaces.     

Improvement of laser damage thresholds of fused silica by ultrasonic-assisted hydrofluoric acid etching

Polished fused silica samples were etched for different durations by using hydrofluoric(HF) acid solution with HF concentrations in an ultrasonic field. Surface and subsurface polishing residues and molecular structure parameters before and after the etching process were characterized by using a fluorescence microscope and infrared(IR) spectrometer, respectively. The laser induced damage thresholds(LIDTs) of the samples were measured by using pulsed nanosecond laser with wavelength of 355 nm. The results showed that surface and subsurface polishing residues can be effectively reduced by the acid etching process, and the LIDTs of fused silica are significantly improved. The etching effects increased with the increase of the HF concentration from 5 wt.% to 40 wt.%. The amount of polishing residues decreased with the increase of the etching duration and then kept stable. Simultaneously, with the increase of the etching time, the mechanical strength and molecular structure were improved.