阵列波导光栅梳状带通滤波器的传输效率

在光波导模场分布高斯近似条件下,根据星形光波导耦合器的耦合特性,推导出了基于累加运算和卷积运算近似表达的阵列波导光栅梳状带通滤波器光谱响应效率的函数表达式。给出了阵列波导光栅梳状带通滤波器光谱响应效率曲线的半最大值全宽度和阵列波导光栅梳状带通滤波器的通道中心波长的光谱响应度与器件参数的关系。在输入信号光谱分布高斯近似条件下,给出了阵列波导光栅梳状带通滤波器信号通道传输效率的计算表达式和输入信号光谱宽度对阵列波导光栅梳状带通滤波器信号通道输出特性的影响。给出了物理意义明确的函数表达式,它们可为快速分析阵列波导光栅梳状带通滤波器的特性提供理论基础。     

速率光纤陀螺寻北仪倾斜补偿算法研究

针对速率光纤陀螺寻北仪,提出了一种倾斜补偿算法.通过采用积分滑动和最小二乘拟合滤波技术,对光纤陀螺和加速度计原始测量信号进行数据处理.试验数据表明,采用本算法解决了由倾斜角存在影响其寻北准确度的关键技术问题.同时给出了提高光纤陀螺寻北仪的准确度的可能因素.     

平板混和层流动的可视化实验研究

混和层流动是多种流动的原型流场,一直受到众多研究者的重视,对气液两相混合层流动进行研究有助于研究离散相气泡与流场中的大尺度拟序涡结构之间的相互作用机理.本文对竖直方形通道内主流雷诺数1819条件下的单相和气液两相平板混和层流动进行可视化研究,分析了单相混和层流动中不同形式的涡的合并过程,并与同样条件下的泡状流混和层的发展过程进行了对比,得到了气泡对涡合并的影响规律.     

用MXAN拟合钩端螺旋体去甲酰化酶XANES谱

钩端螺旋体去甲酰化酶(Leptospira interrogans PDF)是一种重要的含锌金属蛋白酶, 对钩端螺旋体这一广泛存在的致病菌的蛋白合成起着关键的催化作用, 是一个很好的药物设计靶蛋白. 本文测试了LiPDF在pH3.0的溶液状态下的X射线吸收近边结构(XANES: X-Ray Absorption Near-Edge Structure)谱, 利用以从头计算(ab. initio)的多重散射(Multiple Scattering)为基础的MXAN方法确定金属蛋白活性中心的精细结构. 研究发现结合合适的初始结构模型, 可以更好地重现LiPDF蛋白的XANES曲线, 从而能够得到更加准确的结构参数. 活性中心的精细结构为理解LiPDF的pH依赖的催化活性提供了结构基础.     

用蒙特卡罗方法模拟直接转换X射线探测器的响应特性

采用Monte Carlo方法模拟了HgI₂、非晶Se和CdTe几种直接X射线转换探测器在医用X射线范围(10—100keV)的透过谱、背向散射谱、吸收效率和光电灵敏度. 对X射线和HgI₂的作用过程模拟采用了EGSnrc Monte Carlo代码系统, 对信号电荷的产生考虑了电荷产生的高斯噪声和材料深陷阱作用造成的部分电荷收集影响. 结果表明, 载流子平均自由程(Schubweg)在相对于探测材料厚度较小时, 陷阱作用能很大地影响探测灵敏度. HgI₂的灵敏度是非晶Se的5倍以上, CdTe的灵敏度是非晶Se的10倍以上, 采用高Z序数材料可以大大提高探测灵敏度.     

Information-Disturbance Tradeoff in Estimating the Unknown Three-Qubit GHZ State

In a recent paper, Sacchi （Phys. Rev. Lett. 96 （2006） 220502） studied the information-disturbance tradeoff in estimating an unknown two-qubit maximally entangled state. In this study, we explore the tradeoff in estimating 13 an unknown three-qubit GHZ state. The optimal estimation process supplies a fidelity of 13/54 and the tradeoff interpolates smoothly between non-informative measurement and optimal estimation process.     

Chemical Oxidation of La2CuO4 Epitaxial Thin Films Grown by Pulsed Laser Deposition

Chemical oxidation is used to induce superconductivity in La2CuO4 expitaxial thin films fabricated by pulsed laser deposition technique. Details about the influence of oxidation time on structural, surface morphology, Raman spectra, and electrical properties have been investigated. The results convince that successful uptake of oxygen occurs in the oxidized films, and the content of the inserted oxygen increases with increasing oxidation interval. The possible mechanism for the excess oxygen insertion into the film is also discussed.     

A Base-Emitter Self-Aligned Multi-Finger Sil-xGex/Si Power Heterojunction Bipolar Transistor

With a crystal orientation dependent on the etch rate of Si in KOH-based solution, a base-emitter self-Migned large-area multi-finger configuration power SiGe heterojunction bipolar transistor （HBT） device （with an emitter area of about 880μm^2） is fabricated with 2μm double-mesa technology. The maximum dc current gain is 226.1. The collector-emitter junction breakdown voltage BVcEo is 10 V and the collector-base junction breakdown voltage BVcBo is 16 V with collector doping concentration of 1 × 10^17 cm^-3 and thickness of 400nm. The device exhibited a maximum oscillation frequency fmax of 35.5 GHz and a cut-off frequency fT of 24.9 GHz at a dc bias point of Ic = 70 mA and the voltage between collector and emitter is VCE = 3 V. Load pull measurements in class-A operation of the SiGe HBT are performed at 1.9 GHz with input power ranging from OdBm to 21 dBm. A maximum output power of 29.9dBm （about 977mW） is obtained at an input power of 18.SdBm with a gain of 11.47dB. Compared to a non-self-aligned SiGe HBT with the same heterostructure and process, fmax and fT are improved by about 83.9% and 38.3%, respectively.     

Measuring Grüneisen Parameter of Lead by High Pressure-Jump Method

Using the technology of pressure jump, variations of temperature associated with pressure from 2.4 GPa to 4.6 GPa are measured for lead. The Grfuneisen parameter is calculated from the thermodynamic relation γ =（Ks/T）（aT/aP）s, in which substitution of △T/△P for aT/aP at median pressure is strictly justified. The correction of temperature change is carried out by analysing the experimental data, which makes the process more approaching to an adiabatic condition. The calculated values of △T/ △ P and γ gradually decrease with the increasing pressure. The decrease trend is consistent with the previous work. The γ values in the range of 2-3 GPa are averagely higher than the results of Ramakrishnan et al., indicating the effect of temperature correction. The improved method is promising for measurements of Grfineisen parameter to higher pressure range.     

光纤量子密码网络

 数字通信和数字信号处理领域的快速发展直接推动了20世纪后半叶兴起的信息革命。今天的数字信息系统仍然只在经典物理的范畴。每一个比特的信息都能完全的被经典器件描述，比如说一个晶体管或者微处理器的输入电压高低来代表0或者1。然而，信息也能通过量子力学的方式来处理和传输，这就产生了全新的量子信息科学。量子信息科学的一个典型应用就是量子密码术，在过去的十几年中发展十分迅速，美国和欧洲甚至都已经有比较成熟的商业产品。那么，什么是量子密码术，它的基本工作原理是什么，量子密码网络又是解决什么问题的。希望通过本文的叙述，读者能有大致的了解。