Influence of Rapid Thermal Annealing on the Structure and Electrical Properties of Ce-Doped HfO2 Gate Dielectric

Ce-doped Hf02 （HfCeO） films are prepared by radio-frequency magnetron sputtering. The influences of rapid thermal annealing on the structure and electrical properties of HfCeO films are investigated. The results show that the incorporation of Ce into Hf02 increases the crystallization temperature of Hf02, and the cubic phase of Hf02 can be stabilized by incorporating Ce into Hf02. After high temperature annealing, Hf 4f core level spectra shift to a higher energy, whereas O 1s core level spectra shift to a lower energy. With increasing annealing temperatures, the effective permittivity increases, whereas the flat-band voltage shift and effective oxide charge density decrease. Moreover, the leakage current density of the HfCeO films decreases initially, and then increases as the annealing temperature increases.     

GaP薄膜的射频磁控溅射沉积及其计算机模拟

以GaP为靶材采用射频磁控溅射法制备GaP红外光学薄膜，通过保持Ar Ⅰ 750nm发射光谱线强度不变获得了不同工艺参数，并对沉积过程进行了计算机模拟.功率较小、气压较大时，Ga和P的溅射率、输运效率及沉积到衬底时的能量均较小，Ga的溅射率及输运效率均大于P的，使薄膜沉积速率较低、薄膜中Ga的含量大于P的，GaP薄膜产生较大吸收.功率较大、气压较小时，Ga和P的溅射率、输运效率及沉积到衬底时的能量均增大，Ga的溅射率大于P的、但其输运效率小于P的，使GaP薄膜的沉积速率增大、薄膜中Ga与P的含量接近化学计量比，GaP薄膜的吸收降低，因此有利于制备厚度较大的GaP薄膜. 关键词： GaP 薄膜 射频磁控溅射 计算机模拟     

Influence of Radio-Frequecy Power on Structural and Electrical Properties of Sputtered Hafnium Dioxide Thin Films

Hafnium dioxide （HfO2） thin films are prepared by rf magnetron sputtering. The influences of rf power on the structure, chemical states and electrical properties of the thin films were investigated through x-ray diffraction, x-ray photoelectron spectroscopy, capacitance-voltage and leakage current density-voltage measurement and UV-VIS spectrophotometry. The results show that the HfO2 thin films have a mixed structure of amorphous and polycrystalline phases. With increasing rf power, the crystallinity is enhanced and the crystallite size of the thin films is increased. The oxidation of Hf atoms is improved with increasing rf power for the HfO2 thin films. The flat band shift, oxide charge density and leakage current density of the thin films all decrease as the rf power increases from 50 to 110 W, and then increase as the rf power is increased to 140 W. The band gap energy is smaller for the thin film deposited at 110 W.     

基于压缩残差网络的雷达辐射源识别方法研究

针对低信噪比条件下,现有的雷达辐射源信号识别方法存在识别正确率低、时效性差的问题,提出了一种基于压缩残差网络的雷达辐射源信号识别方法。首先,利用Choi-Williams分布的时频分析方法将时域信号转换为二维时频图像;然后,根据应用场景特点,选择卷积神经网络（Convolutional Neural Networks, CNN）“压缩”范围;最后,构建压缩残差网络来自动提取图像特征并完成分类。仿真实验结果表明,在同等体量的设计下,与当前较为常用的标准CNN以及ResNet模型相比,所提模型能够降低信号识别运行时间约88%,在信噪比为-14 dB条件下对14种雷达辐射源信号的平均识别率高约5%。提供了一种高效的雷达辐射源信号智能识别方法,具有潜在的工程应用前景。     

Theoretics-directed effect of copper or aluminum content on the ductility characteristics of Al-based(Al_3Ti,AlTi,AlCu,AlTiCu_2)intermetallic compounds

First-principle simulations have been applied to investigate the effect of copper(Cu) or aluminum(Al) content on the ductility of Al_3Ti,AlTi,AlCu,and AlTiCu_2 alloys.The mechanical stable and elastic properties of Al-based intermetallic compounds are researched by density functional theory with the generalized gradient approximation(DFT-GGA).The calculated lattice constants are in conformity with the previous experimental and theoretical data.The deduced elastic constants show that the investigated Al_3Ti,AlTi,AlCu,and AlTiCu_2 structures are mechanically stable.Shear modulus,Young's modulus,Poisson's ratio,and the ratio B/G have also been figured out by using reckoned elastic constants.A further analysis of Young's modulus and Poisson's ratio reveals that the third added element copper content has significant effects on the Al-Ti-based ICs ductile character.     

First-Principles Calculations on Electronic,Chemical Bonding and Optical Properties of Cubic Hf_3N_4

Electronic,chemical bonding and optical properties of cubic Hf 3N4(c-Hf3N4) are calculated using the firstprinciples based on the density functional theory(DFT).The optimized lattice parameter is in good agreement with the available experimental and calculational values.Band structure shows that c-Hf3N4 has direct band gap.Densities of states(DOS) and charge densities indicate that the bonding between Hf and N is ionic.The optical properties including complex dielectric function,refractive index,extinction coefficient,absorption coefficient,and reflectivity are predicted.From the theory of crystal-field and molecular-orbital bonding,the optical transitions of c-Hf3N4 affected by the electronic structure and molecular orbital are studied.It is found that the absorptive transitions of c-Hf3N4 compound are predominantly composed of the transitions from NT22p valence bands to HfT2(dxy,dxz,dyz) conduction bands.     

GeC薄膜的射频磁控反应溅射制备及性质

用射频磁控反应溅射法在ZnS衬底上制备了GeC薄膜,研究了工艺参数对Ge靶溅射及GeC薄膜红外透射性能的影响.衬底温度较低时GeC薄膜中含有H,形成了CH₂,CH₃,Ge-CH₃等,使薄膜产生红外吸收;随衬底温度升高,薄膜红外吸收明显减小.靶基距、射频功率、Ar:CH₄气体流量比、总气压对靶面中毒及溅射影响较大,但对GeC薄膜红外吸收影响较小.靶面中毒严重时,所制备无氢GeC薄膜附着性能差,随靶中毒减弱薄膜附着性能变好.优化工艺后,在ZnS衬底上制备了附着性能良好的无氢GeC薄膜,其折射率约为1.78,薄膜中C的含量比Ge的大,二者主要形成了C—Ge键.所制备的GeC/GaP红外增透保护膜系对ZnS衬底有良好的增透效果. 关键词： GeC薄膜 红外透射光谱 射频磁控溅射 XPS     

Structural,electronic,optical,elastic properties and Born effective charges of monoclinic HfO_2 from first-principles calculations

First-principles calculations of structural, electronic, optical, elastic, mechanical properties, and Born effective charges of monoclinic HfO2 are performed with the plane-wave pseudopotential technique based on the density-functional theory. The calculated structural properties are consistent with the previous theoretical and experimental results. The electronic structure reveals that monoclinic HfO2 has an indirect band gap. The analyses of density of states and Mulliken charges show mainly covalent nature in Hf-O bonds. Optical properties, including the dielectric function, refractive index, extinction coefficient, reflectivity, absorption coefficient, loss function, and optical conductivity each as a function of photon energy are calculated and show an optical anisotropy. Moreover, the independent elastic constants, bulk modulus, shear modulus, Young＇s modulus, Poisson＇s ratio, compressibility, Lam6 constant, sound velocity, Debye temperature, and Born effective charges of monoclinic HfO2 are obtained, which may help to understand monoclinic HfO2 for future work.     

压力下氯化钠型SnAs结构和电子性质的密度泛函理论研究

基于第一性原理计算方法研究了压力对氯化钠型SnAs结构和电子特性的影响。计算结果表明,晶格参数随着压力的增加而减小;状态密度显示随着压力的增加,As-p态的减小导致了SnAs 电导率降低。通过对电荷密度和Mulliken重叠布居的研究,分析了Sn和As原子之间的键合情况,表明了SnAs中共价键随着压力的增加而增强。进一步分析得知费米能级电子态密度的降低,可能导致了Tc的降低。     

密度泛函理论研究硫族元素取代对单层Ag2S结构和电子性质的影响

本文利用第一性原理计算讨论了硫族元素掺杂单层Ag₂S的缺陷形成能和电子性质.缺陷形成能反映了在富Ag条件下的掺杂更容易.计算得到的带隙、Mulliken布居和态密度展示出了其相应结构的电子性质.与纯单层的Ag₂S相比,Se/Te掺杂Ag₂S后的带隙显示出其电导率变化不大.基于Mulliken原子和键布居,研究了硫族元素掺杂后Ag₂S中的共价性.此外,通过讨论态密度,分析了能级的移动和电子的贡献.