聚酰亚胺薄膜表面粗糙度的影响因素

 采用热蒸发气相沉积聚合方法（VDP）制备了聚酰亚胺(PI)薄膜,研究了设备、衬底温度、升温过程和单体配比因素对PI薄膜表面形貌的影响。利用干涉显微镜和扫描电镜对薄膜表面形貌进行了分析;利用原子力显微镜测定了薄膜表面粗糙度。结果表明：设定蒸发源-衬底距离为74 cm时可成连续膜;蒸发源采用一段升温和多段升温时,膜表面均方根粗糙度分别为291.23 nm和61.99 nm;采用细筛网可防止原料的喷溅;均苯四甲酸二酐和4,4′-二氨基二苯醚（PMDA和ODA）单体沉积速率比值为0.9∶1时,膜表面均方根粗糙度值可减小至3.30 nm;沉积衬底温度保持30 ℃左右时,膜表面均方根粗糙度为4.01 nm, 随温度的上升,膜表面质量会逐渐变差。     

基尔霍夫近似下激光海面漫反射组网通信特性

 针对激光点对点通信方式的不足,根据舰艇编队通信的实际需要,提出了利用海面作为激光漫反射媒介的一对多的组网通信方法,并且采用基尔霍夫近似的方法对激光海面漫反射通信的特性进行了研究。通过对激光光束入射海面后产生的散射场的分析计算,采用遮蔽函数对计算过程中的阴影效应加以修正,得出了较为准确的2维激光海面双站散射系数和后向散射系数,并进行了实验验证,说明了激光海面漫反射组网通信方法的可行性。     

Exchange enhanced sensitivity gain for solvent-exchangeable protons in 2D 1H-15N heteronuclear correlation spectra acquired with band-selective pulses

Conformational or chemical exchange can cause significant sensitivity loss in NMR spectroscopy through resonance broadening for nuclear spins involved in these processes. While this effect may sometimes be alleviated by manipulating experimental conditions such as temperature, pH, and buffers, conditions optimal for all resonances are not always achievable. As a consequence, any means of recovering or minimizing this exchange-induced sensitivity loss is potentially of significant value in regaining information otherwise lost. We report the experimental observation of significant sensitivity gain for nuclear spins undergoing chemical exchange with solvent (water) at exchange rates ca 1-10 s(-1) in (1)H-(15)N correlation spectra of proteins acquired with band-selective pulses (the SOFAST-HMQC sequence).     

Investigation on F–B–S tri-doped nano-TiO<Subscript>2</Subscript> films for the photocatalytic degradation of organic dyes

F–B–S tri-doped titanium dioxide thin films on common glass were prepared by a modified sol–gel method, in which tetrabutyl titanate (Ti(OC₄H₉)₄) was chosen as the precursor and boric acid (H₃BO₃), sodium fluoride (NaF), and thiourea (N₂H₄CS) were employed as boron, fluorine, and sulfur sources, respectively. The microstructure and optical property were characterized by X-ray diffraction, high-resolution field emission scanning electron microscopy, N₂ adsorption–desorption isotherms, photoluminescence spectrum, and UV–Vis diffraction reflectance spectroscopy. The photocatalytic performances were evaluated by decomposition of organic dyes in solution. The experimental results revealed that the F–B–S tri-doped TiO₂ thin film was composed of uniform round-like nano-particles with the size range of 5–8 nm. F–B–S tri-doping not only significantly promoted the UV-induced photodecomposition activities of TiO₂ films but also extended the optical response of TiO₂ red shift to visible light region, herein improving the visible light-induced degradation of organic dyes. The improvement mechanism by F–B–S tri-doping was also discussed.     

Study of the excitation properties of the Si3O2 cluster under an external electric field

The structure of the Si₃O_x (x=2, 3) cluster is investigated; we find that the geometry of Si₃O₂ is similar to that of Si₃O₃ except for the oxygen-deficient defect structure (Si-Si band) which exists only in the Si₃O₂ cluster. It is known that oxygen-deficient defects are used to explain visible luminescence (especially blue, purple and ultraviolet light) from silicon-based materials, which are directly bound up with the excited states of the molecules. Therefore the excitation properties of the two clusters are also studied. Our results show that the absorption spectrum of Si₃O₂ is concentrated in the visible light region. In contrast, the absorption spectrum of Si₃O₃ is mainly located in the ultraviolet light region. The calculations are perfectly consistent with experimental data and also support the theory of oxygen-deficient defects.     

Measurements on diproton emission from the break-up channels of ~(23)Al and ~(22)Mg

Two-proton relative momentum distributions from the break-up channels 23Al→p+p+21Na and 22Mg→p+p+20Ne at an energy of 60-70 A MeV have been measured together with two-proton opening angles at the projectile fragment separator beamline (RIPS) in the RIKEN Ring Cyclotron Facility. The results demonstrate the existence of diproton emission component from single-step 2He for highly excited 23Al and 22Mg.     

Level structures in the 114 In nucleus

High-spin states in ¹¹⁴In were populated using the reaction ¹¹⁰Pd(⁷Li, 3n)¹¹⁴In at a beam energy of 26MeV. The level scheme of ¹¹⁴In consisting of six bands is established up to excitation energy ～ 5MeV and spin ～ 17 ? with the addition of 58 new transitions and their configurations are discussed. The intense positive-parity dipole cascade may be interpreted as shears band based on $ \pi$ [(g _9/2)^-1] ? $ \nu$ [(g _7/2/d _5/2)(h _11/2)²] configuration. The $ \Delta$ I = 2 bands based on proton excitation have been observed in ¹¹⁴In for the first time.     

A wire microcalorimetric study of catalytic ignition of methane–air mixtures over palladium oxide

Catalytic ignition and heat release of methane oxidation over a Pd wire covered with a 1–2 μm PdO surface layer were investigated by wire microcalorimetry over the temperature range of 600–770 K and pressure range of 0.5–4 atm. Ignition temperatures and heat release rates for different methane concentrations (1–4 vol.% in dry air) were determined, showing that the ignition temperatures decrease with increasing the methane concentration and increasing ambient pressure. At total pressure of 1 atm and 2% methane concentration, the global activation energy for the catalytic reaction is 21.5 ± 0.9 kcal/mol and 14.3 ± 0.2 kcal/mol in the temperature ranges of 600–670 K and 670–770 K, respectively. The reaction order for methane is 0.9 ± 0.1 over the temperature range of 630–770 K.     

Ultra-low on-resistance high voltage (>600 V) SOI MOSFET with a reduced cell pitch

A low specific on-resistance (R S,on) silicon-on-insulator (SOI) trench MOSFET (metal-oxide-semiconductor-field-effect-transistor) with a reduced cell pitch is proposed.The lateral MOSFET features multiple trenches:two oxide trenches in the drift region and a trench gate extended to the buried oxide (BOX) (SOI MT MOSFET).Firstly,the oxide trenches increase the average electric field strength along the x direction due to lower permittivity of oxide compared with that of Si;secondly,the oxide trenches cause multiple-directional depletion,which improves the electric field distribution and enhances the reduced surface field (RESURF) effect in the SOI layer.Both of them result in a high breakdown voltage (BV).Thirdly,the oxide trenches cause the drift region to be folded in the vertical direction,leading to a shortened cell pitch and a reduced R S,on.Fourthly,the trench gate extended to the BOX further reduces R S,on,owing to the electron accumulation layer.The BV of the MT MOSFET increases from 309 V for a conventional SOI lateral double diffused metal-oxide semiconductor (LDMOS) to 632 V at the same half cell pitch of 21.5 μm,and R S,on decreases from 419 m · cm 2 to 36.6 m · cm 2.The proposed structure can also help to dramatically reduce the cell pitch at the same breakdown voltage.     

First-principles investigation of the electronic structure and magnetism of Heusler alloys CoMnSb and Co2MnSb

The spin-polarized electronic band structures, density of states (DOS), and magnetic properties of Co-Mn-based Heusler alloys CoMnSb and Co₂MnSb have been studied by first-principles method. The calculations were performed by using the full-potential linearized augmented plane wave (FP-LAPW) within the spin-polarized density functional theory and generalized gradient approximation (GGA). Calculated electronic band structures and the density of states are discussed in terms of the contribution of Co 3d⁷4s², Mn 3d⁵4s², and Sb 5s²5p³ partial density of states and the spin magnetic moments were also calculated. The results reveal that both CoMnSb and Co₂MnSb have stable ferromagnetic ground state. They are ideal half-metallic (HM) ferromagnet at their equilibrium lattice constants. The calculated total spin magnetic moments are 3μ_B for CoMnSb and 6μ_B for Co₂MnSb per unit cell, which agree with the Slater-Pauling rule quite well.