Ca3La(BO3)3：Tb3+的合成与发光性质

高温固相反应法合成了Ca₃La(BO₃)₃:Tb³⁺光致发光材料。利用扫描电镜和激光衍射分析仪测定了样品的晶粒形貌及粒径大小分布,利用荧光分光光度计研究了Ca₃La(BO₃)₃:Tb³⁺的光致发光特性。确定了在Ca₃La(BO₃)₃基质中Tb³⁺离子浓度对其发光强度的影响及其自身浓度猝灭机理;探讨了助熔剂Li₂CO₃、敏化剂Ce³⁺离子的加入对荧光粉发光强度的影响。     

接枝羧基的有限长碳纳米管电子结构的第一性原理研究

基于局域密度泛函理论，采用第一性原理方法，建立了对(5,5)型和(9,0)型有限长碳纳米管接枝羧基官能团的原子模型，通过计算其电子分布和态密度的变化，讨论羧基官能团对碳纳米管电子结构和电子输运特性的影响. 计算表明，接枝羧基的碳纳米管,其电子结构明显改变，其费米能级上的电子态密度下降；最高占据轨道上的非定域程度减弱,致使电子输运性能呈下降趋势. 关键词： 碳纳米管 密度泛函理论 电子结构     

F+H2→HF+H反应的全量子态分辨的散射动力学研究

利用高灵敏度的氢原子里德堡飞渡时间谱方法研究了 F H_2→HF H 反应碰撞能在5.02kJ/mol 下的交叉分子束反应态态散射动力学.所有在时间飞渡谱中被观测到的谱峰可以归属为 HF 产物的振转态结构.还观测到了明显的 HF(v’=3)前向散射,以及少许的 HF(v’=2)前向散射.     

Eu2-xPbxRu2O7中的金属-绝缘体相变和自旋玻璃态行为

通过对Eu2-xPbxRu2O7(x=0.0, 0.2, 0.4, 0.6, 0.8, 1.0和1.8)系列样品的结构、电阻和磁化率的观测,结果发现,随着Pb替代浓度x值的增加,样品的电阻率逐渐减小,系统在x=0.8附近发生了金属-绝缘体(M-I)相变;Ru4+的局域磁矩及其自旋玻璃冻结温度TG也随之降低. 在该体系中,Pb2+对Eu3+的部分替代使样品中载流子浓度增加,Pb的6p能带与Ru 4d电子的T2g能带混合,能带得以拓宽,Ru 4d电子的巡游性增强,导致该体系物性的系列变化.     

一类过程摄动系统的无阻塞鲁棒性

使用参数Dioid模块网络法,把含大量摄动参数的在普通极大代数意义下非线性状态空间模型在参数Dioid意义下线性化,在此基础上研究一类过程摄动系统的无阻塞鲁棒性.给出了有限缓冲串行生产系统在没有缓冲器下无阻塞的充要条件和充分条件.     

非齐次微分方程两点边值问题正解的存在性及多重性

本文考虑一类非齐次微分方程的两点边值问题,得到了一些有关其正解存在性与多重性的精确条件．     

Fabrication of Micro -Optical Devices by a Femtosecond Laser

Femtosecond laser is a perfect laser source for materials processing when high accuracy and small structure size are required. Due to the ultra short interaction time and the high peak power, the process is generally characterized by the absence of heat diffusion and, consequently molten layers. Various induced structures have been observed in materials after the femtosecond laser irradiation. Here, we report on fabrication of micro-optical devices by the femtosecond laser. 1) formation of optical waveguide with internal loss less than 0.5dB/cm in the wavelength region from 1.2 to 1.6 mm, by translating a silica glass perpendicular to the axis of the focused femtosecond laser beam; 2) nano-scale valence state manipulation of active ions inside transparent materials; 3) space-selective precipitation and control of metal nanoparticles inside transparent materials; The mechanisms and applications of the femtosecond laser induced phenomena were also discussed.     

变In组分沟道的MM-HEMT材料电子输运特性研究

在变缓冲层高迁移率晶体管（MM_HEMT）器件中，二维电子气的输运性质对器件性能起着决定作用.通过低温下二维电子气横向电阻的量子振荡现象，结合变温度的Hall测量，系统研究了不同In组分沟道MM_HEMT器件中子带电子迁移率和浓度随温度的变化关系.结果表明，沟道中In组分为0.65的样品，材料电学性能最好，In组分高于0.65的样品，严重的晶格失配将产生位错，引起迁移率下降，大大影响材料和器件的性能. 关键词： 变缓冲层高迁移率晶体管 Shubnikov_de Hass 振荡     

超短强激光脉冲在等离子体隧道中传输的理论与数值模拟研究

研究了超短强激光脉冲在非扰动抛物型部分电离的预等离子体隧道中的传输特性.从Maxwell方程出发得到了两个包含衍射、三阶强度非线性、等离子体散焦、等离子体隧道聚焦以及相对论自聚焦等效应在内的激光场演化方程，即折射率方程和哈密顿-雅可比方程.在此基础 上得到了激光在等离子体隧道中传输的包络方程以及光斑半径与传输距离、隧道宽度等初始 参量的关系. 关键词： 等离子体隧道聚焦 相对论自聚焦 势阱     

Photonic crystals--a step towards integrated circuits for photonics.

The field of photonic crystals has, over the past few years, received dramatically increased attention. Photonic crystals are artificially engineered structures that exhibit a periodic variation in one, two, or three dimensions of the dielectric constant, with a period of the order of the pertinent light wavelength. Such structures in three dimensions should exhibit properties similar to solid-state electronic crystals, such as bandgaps, in other words wavelength regions where light cannot propagate in any direction. By introducing defects into the periodic arrangement, the photonic crystals exhibit properties analogous to those of solid-state crystals. The basic feature of a photonic bandgap was indeed experimentally demonstrated in the beginning of the 1990s, and sparked a large interest in, and in many ways revitalized, photonics research. There are several reasons for this attention. One is that photonic crystals, in their own right, offer a proliferation of challenging research tasks, involving a multitude of disciplines, such as electromagnetic theory, nanofabrication, semi-conductor technology, materials science, biotechnology, to name a few. Another reason is given by the somewhat more down-to-earth expectations that photonics crystals will create unique opportunities for novel devices and applications, and contribute to solving some of the issues that have plagued photonics such as large physical sizes, comparatively low functionality, and high costs. Herein, we will treat some basics of photonic crystal structures and discuss the state-of-the-art in fabrication as well give some examples of devices with unique properties, due to the use of photonic crystals. We will also point out some of the problems that still remain to be solved, and give a view on where photonic crystals currently stand.