嵌入锂原子的zigzag型单壁碳纳米管的电子传导特性

运用基于第一性原理的密度泛函理论（DFT）的非平衡格林函数（NEGF）方法对Li原子嵌入后的zigzag型单壁碳纳米管(SWCNT)的电子输运性质进行了研究.在构建和优化了Li原子嵌入的zigzag型单壁碳纳米管的电子输运模型后,研究了该系统的电子传输概率、能态密度、电子透射谱,还研究了电子能量和偏置电压设置与变化对其电子输运特性的影响.结果显示zigzag型单壁碳纳米管嵌入Li原子后,电子输运特性发生了较大变化,具有电子输运拓宽效应和量子台阶复苏效应. 关键词： Li原子 碳纳米管 电子输运 拓宽效应     

氧吸附对单壁碳纳米管的电子结构和光学性能的影响

用密度泛函理论计算了氧分子物理吸附在半导体型单壁碳纳米管的束缚能，能带结构和吸收 光谱.计算结果指出氧分子吸附在碳纳米管表面的优先位置，研究发现氧吸附对碳管的电子 输运特性和吸收光谱有着重要的影响，并对光致氧分子解吸附的现象进行了理论分析. 关键词： 单壁碳纳米管 氧物理吸附 能带结构 吸收光谱     

官能团对芳烃体系电学特性的影响

以联苯分子为研究对象,利用密度泛函理论和弹性散射格林函数方法,研究了不同官能团对分子的电子结构以及分子结电输运性质的影响.计算结果表明在分子中的同一位置添加不同的官能团时,会使分子的几何结构和电子结构发生变化,从而影响分子结的电输运性质.     

官能团对芳烃体系电学特性的影响

以联苯分子为研究对象,利用密度泛函理论和弹性散射格林函数方法,研究了不同官能团对分子的电子结构以及分子结电输运性质的影响.计算结果表明在分子中的同一位置添加不同的官能团时,会使分子的几何结构和电子结构发生变化,从而影响分子结的电输运性质.     

氮掺杂手性碳纳米管的电子结构和输运特性的理论研究

运用第一性原理的密度泛函理论,结合非平衡格林函数,研究了氮原子取代掺杂手性单壁(6,3)碳纳米管的电子结构和输运特性.计算结果表明:不同构形和不同数目的氮原子取代掺杂对手性碳管的输运性质有很复杂的影响.研究发现,氮原子掺杂明显改变了碳管的电子结构,使金属型手性碳管的输运性能降低,电流-电压曲线呈非线性变化,而且输运性能随着杂质原子间间距的变化而发生显著改变.在一定条件下,金属型碳管向半导体型转变. 关键词： 手性单壁碳纳米管 氮掺杂 电子结构 输运性能     

三碘甲状腺素团簇结构与光谱性质的密度泛函理论研究

我们利用密度泛函理论(DFT)，在B3LYP/Lan12mb基组水平上，得到了三碘甲状腺素团簇的几何和电子结构.在此基础上，利用含时密度泛函理论(TDDFT)，使用相同的基组和采用极化连续介质模型(PCM)，对其溶剂效应下的吸收光谱进行研究．研究结果表明，优化所得三碘甲状腺素团簇的对称性为C₁;在基态稳定结构基础上，研究了该分子的红外和拉曼分子振动谱特性，同时研究了其输运性质，即三碘甲状腺素团簇为p型输运材料;通过含时密度泛函理论，在优化好的基态结构基础上，又计算了它的溶剂效应，进一步得出该分子在水溶剂中的吸收光谱特性.     

卷曲效应对单壁碳纳米管电子结构的影响

利用计入卷曲效应的单壁碳纳米管(SWCNT)的能量色散关系,计算最低导带的电子速度及有效质量,并与不计入卷曲效应的结果进行了比较.计算结果表明:卷曲效应对电子速度及有效质量的影响与SWCNT的类型密切相关,金属锯齿型SWCNT对卷曲效应最为敏感,其次是扶手椅型SWCNT,最不敏感的是半导体锯齿型SWCNT.由此可以推断,卷曲效应对金属锯齿型SWCNT电子结构及低偏压输运特性影响最大,其次是扶手椅型SWCNT,影响最不明显的是半导体锯齿型SWCNT.这些结果与实验测量及密度泛函理论计算结果完全一致. 关键词： 单壁碳纳米管 卷曲效应 电子速度 电子有效质量     

末端基团对硫醇分子结电输运性质的影响北大核心CSCD

利用杂化密度泛函理论,研究了以甲基、醇基、羧基为末端基团的烷烃硫醇分子与金电极形成分子结的电子结构,利用弹性散射格林函数方法研究了烷烃硫醇分子的电输运性质.研究结果表明,末端基团对分子结导电能力有显著影响,其原因可归结为末端基团碳原子电子结合能的差异.结合能越高,末端基团电子的局域化程度越强,从而减弱了电子的输运能力.理论计算结果与实验结果定性定量上都比较符合.     

Ni原子链填充碳纳米管的能量、电子结构和磁性的第一性原理计算

在广义梯度近似(GGA)下,利用密度泛函理论(DFT)框架下的第一性原理投影缀加波(PAW)赝势方法,研究了单根Ni原子链填充扶手椅型(n,n)(5≤n≤9)单壁碳纳米管的能量、电子结构和磁性.结果表明(5,5)碳纳米管直径过小排斥Ni原子链的插入,(6,6)碳纳米管是容纳Ni原子链的最小碳纳米管,特别是Ni原子链位于其中心轴线上时的形成能最低.以Ni@(6,6)和Ni@(7,7)系统为例,计算并分析了其自旋极化能带结构,电子总态密度,分波态密度和磁性,发现Ni原子的3d态电子 关键词： Ni原子链 碳纳米管 电子结构 磁性能     

石墨烯纳米带卷曲效应对其电子特性的影响

石墨烯纳米带 (GNRs) 是一种重要的纳米材料, 碳纳米管可看作是GNRs卷曲而成的无缝圆筒. 利用基于密度泛函理论的第一性原理方法, 系统研究了GNRs卷曲变形到不同几何构型时, 其电子特性, 包括能带结构 (特别是带隙) 、态密度、透射谱的变化规律. 结果表明: 无论是锯齿型GNRs (ZGNRs) 或扶手椅型GNRs (AGNRs), 在其卷曲成管之前, 其电子特性对卷曲形变均不敏感, 这意味着GNRs的电子结构及输运特性有较强地抵抗卷曲变形的能力. 当GNRs 卷曲成管后, ZGNRs和AGNRs表现出完全不同的性质, ZGNRs几乎保持金属性不变或变为准金属; 但AGNRs的电子特性有较大的变化, 出现不同带隙半导体、准金属之间的转变, 这也许密切关系到碳纳米管管口周长方向上的周期性边界条件及量子禁锢的改变. 这些研究对于了解GNRs电子特性的卷曲效应、以及GNRs与碳纳米管电子特性的关系 (结构与特性的关系) 有重要意义. 关键词： 石墨烯纳米带 卷曲效应 电子特性 密度泛函理论     

Electron localization in superlattice-carbon nanotubes

Electronic transport properties of superlattice-carbon nanotubes (SCNTs) attached to semi-infinite clean metallic carbon nanotube (CNT) leads are investigated in the framework of a simple model based on mode (momentum)-space within the tight-binding approximation. This model reduces the numerical calculation time and enables us to use the transfer matrix method to investigate transport in an SCNT. We calculate the localization length and density of states (DOS) for various strengths of boron defect. Our numerical results indicate that the localization length decreases with increasing boron concentration, showing the tendency of the system towards the insulating behavior. Also, we observe a nearly stepwise dependence of the localization length on energy at small boron concentration. By controlling the layered boron concentration, the system can be tuned to yield either localized or extended states. These calculations can be generalized to the magnetic defects embedded in the device, which can act as a spin-filter. Our results can serve as a base for developments in designing nano-electronic devices.     

Surface grafting density analysis of high anti-clotting PU-Si-g-P(MPC) films

Well-defined zwitterionic polymer brushes with good blood compatibility were studied, grafted from polyurethane (PU) substrate (PU-Si-g-P(MPC)) by surface-initiated reverse atom transfer radical polymerization (SI-RATRP). We found that the structure of polymer brushes and hence their properties greatly depend on the grafting density. To solve the problems of the normal method for grafting density measurement, i.e., more requirements for qualified and proficient instrument operator, we established an effective and feasible way instead of the conventional method of spectroscopic ellipsometer combined with gel permeation chromatograph (ELM/GPC) to calculate the grafting density of PU-Si-g-P(MPC) films by using a software named ImageJ 1.44e in combination with scanning electronic microscope (SEM) or atomic microscope (AFM). X-ray photoelectron spectroscopy (XPS), SEM and AFM were employed to analyze the surface topography and changes of elements before and after graft modification of the synthetic PU-Si-g-P(MPC) biofilms.     

Nonlinear Deformation Processes and Damage Modes of Super Carbon Nanotubes with Armchair-Armchair Topology

The tensile deformations and fractures of super carbon nanotubes （SCNTs） with armchair-armchair topology are investigated by using the atomic-scale finite element method. SCNTs generated from carbon nanotubes （CNTs） with different characteristic aspect ratios are found to have different nonlinear behaviours under uniaxial tensions. Specifically, an SCNT wi~h higher aspect ratio has three distinct stages： rotation, stretch and rupture, while an SCNT with lower aspect ratio has only two stages. This information may compensate for previous work and enrich our knowledge about Y-branched CNTs and SCNTs.     

不同激发波长下单壁碳纳米管与多壁碳纳米管的拉曼光谱比较

对不同激发波长下单壁和多壁碳纳米管的激光拉曼光谱进行了比较。发现单壁碳纳米管D峰强度和G峰强度的比值(ID/IG)几乎不随激发光子能量的改变而变化,多壁碳纳米管ID/IG值随着激发光子能量的增加以斜率0 3/eV减小。并对此现象进行了初步的分析。此外,还发现在1064nm激发波长下,单壁和多壁碳纳米管2500-3500cm-1之间拉曼峰的相对强度随着入射激光功率的增加而增加。     

Calculation of scanning tunnelling microscopy images for Kr/graphite system

The scanning-tunnelling-microscopy (STM) images of Kr atoms adsorbed on a monolayer graphite sheet (Kr/graphite system) are calculated using the first-principle total-energy electronic structure calculations within the density functional theory in the local density approximation. The results obtained agree well with the observations. It is found that the optimal site of the adsorbed Kr atom is at the top of the centre of the carbon hexagon, and its equilibrium distance from monolayer graphite surface is about 0.335nm. It is shown that the hybridization of C 2p electronic states (π-electronic states) and Kr 4p and 5s electronic states is the main origin of the Fermi-level local density of state.     

Effect of carbon network defects on the electronic structure of semiconductor single-wall carbon nanotubes

For a single-wall (14, 0) carbon nanotube, the total density of electronic states of the ideal structure and of some possible defect structures is calculated in the framework of the band theory approach using Gaussian-type orbitals and the approximation of the generalized density gradient. It is shown that allowance for defects of the atomic structure of a nanotube makes it possible to adequately describe the existing experimental data on nanotube electronic structure. In the framework of the same approach, the total density of electronic states is calculated for an intermolecular contact of (5, 5) and (10, 0) single-wall carbon nanotubes formed due to the creation of a 5–7 defect. It is shown that the electronic states related to the contact region and the 5–7 defect lie in vicinity of the Fermi level.     

Surface modification of poly(styrene-b-(ethylene-co-butylene)-b-styrene) elastomer via photo-initiated graft polymerization of poly(ethylene glycol)

Poly(styrene-b-(ethylene-co-butylene)-b-styrene) (SEBS) copolymer biomedical elastomer was covalently grafted with poly(ethylene glycol) methyl ether methacrylate (PEGMA) via a photo-initiated graft polymerization technique. The surface graft polymerization of SEBS with PEGMA was verified by ATR-FTIR and XPS. Effect of graft polymerization parameters, i.e., monomer concentration, UV irradiation time and initiator concentration on the grafting density was investigated. Comparing with the virgin SEBS film, the PEGMA-modified SEBS film presented an enhanced wettability and a larger surface energy. Besides, the surface grafting of PEGMA imparted excellent anti-platelet adhesion and anti-protein adsorption to the SEBS surface.     

Traffic flow on a toll highway with electronic and traditional tollgates

We study the traffic states and jams occurring in traffic flow on a two-lane toll highway with electronic and manual (traditional) tollgates. The electronic and manual collection vehicles sort themselves into their respective lanes at low density, while they mix at each tollgate at high density. We derive the fundamental diagrams (flow-density diagrams) for the electronic and manual collection vehicles. The traffic states change with increasing density and varying the ratio. Dynamical phase transitions occur. It is shown that the fundamental diagrams for the two tollgates depend greatly on the density and fraction of both vehicles.     

单壁碳纳米管弹性性质的羟基接枝效应

用分子动力学方法研究了端口接枝不同数量羟基对扶手椅型和锯齿型单壁碳纳米管弹性模量的影响.结果表明,未接枝的扶手椅型(5, 5),(10,10)管和锯齿型(9, 0),(18, 0)管杨氏模量分别为948,901和804,860GPa.在接枝2—8个羟基情况下,锯齿型单壁碳纳米管拉伸杨氏模量基本不随接枝数量增加发生变化,而扶手椅单壁碳纳米管则不同,接枝状态下的弹性模量比未接枝状态小很多,但接枝一定数量后,其杨氏模量又略增到某一稳定值.分别从接枝后碳纳米管变形电子密度等值线结构、C—C键长和系统结合能变化规律等方面,对单壁碳纳米管弹性模量的接枝效应进行了分析. 关键词： 碳纳米管 羟基 接枝效应 杨氏模量     

Evolution of electronic states in thin Ca(001) flms in strong electrostatic fields

The transformation of electronic states in Ca(001) films in strong electrostatic fields is studied using electron density functional theory. It is shown that an excess film charge of either sign pins the Fermi level (with respect to the conduction band edge) in a wide range of fields. For positively charged films, the change in the density of states at the Fermi level is small but the energy derivative of the density of states changes sign with increasing excess charge of the film. For negatively charged Ca(001) films, the change in the density of states at the Fermi level plays the main role in stabilizing the width of the occupied part of the conduction band; this should be manifested in the electronic thermodynamic and transport properties of negatively charged Ca(001) films with quantum confinement.