Eu2－xPbxRu2O7中的金属-绝缘体相变和自旋玻璃态行为

通过对Eu_2-xPb_xRu₂O₇(x=0.0, 0.2, 0.4, 0.6, 0.8, 1.0和1.8)系列样品的结构、电阻和磁化率的观测，结果发现，随着Pb替代浓度x值的增加，样品的电阻率逐渐减小，系统在x=0.8附近发生了金属-绝缘体(M-I)相变；Ru⁴⁺的局域磁矩及其自旋玻璃冻结温度T_G也随之降低. 在该体系中，Pb²⁺对Eu³⁺的部分替代使样品中载流子浓度增加，Pb的6p能带与Ru 4d电子的T_2g能带混合，能带得以拓宽，Ru 4d电子的巡游性增强，导致该体系物性的系列变化. 关键词： 自旋几何受挫 2-xPb_xRu₂O₇体系')" href="#">Eu_2-xPb_xRu₂O₇体系 金属-绝缘体相变 自旋玻璃态     

EuSr2Ru1-xTaxCu2O8中Ta替代效应

通过对EuSr2Ru1-xTaxCu2O8(x=0.0,0.1,0.2,0.5和1.0)体系的结构、电阻和磁化强度的观测,发现EuSr2RuCu2O8(x=0.0)样品在130.2K以下呈现铁磁有序,在35K时发生了超导转变,并呈现典型的欠掺杂高温超导体特征;随着Ta对Ru替代浓度x值的增加,铁磁相变温度和超导临界温度均下降.对该体系中的元素替代效应,及其磁有序和超导电性的共存进行了讨论.     

Preparation and Luminescent Properties of Sr3P2-xVxO8∶Eu (0≤x≤2.0)

研究了B位掺杂的Sr3P2-xVxO8(0≤x≤2.0)基质和Eu3+掺杂Sr3-3yEu2yP1.2V0.8O8(0＜y≤0.30)系列样品在紫外光激发下的发光性质.以两种不同紫外激发波长激发Sr3P2-xVxO8基质时,局部最大发光强度似乎与x值间存在周期性变化,且x=0.6和0.8时,Sr3P2-xVxO8样品具有最大发光强度.在Sr3P1.2V0.8O8基质中,Eu3+掺杂的最佳浓度为y=0.20.     

Na0.75Co1-xRuxO2体系中的金属-绝缘体相变

在采用固相反应法成功制备单相Na0.75Co1-xRuxO2(0≤x≤0.5)样品的基础上,对其结构、输运性质和磁性质进行了系统研究.结果表明, x≤0.5的样品仍保持单相,样品的晶格参数随着Ru替代浓度x值的增加逐渐增大,说明在该体系中,Ru能均匀地替代Co.对于x=0的样品,在整个测量温区内,其电阻率-温度关系呈现典型的金属行为; x=0.01样品在T=37K附近发生了金属-绝缘体相变;而x≥0.02的所有样品,整个测量温区内均为半导体.与x=0样品相比较,x=0.1样品在30K时的电阻率增大了5个数量级.我们认为该体系在x=0.01附近发生的金属-绝缘体(MI)相变,起源于CoO2层的无序导致的电子的Anderson局域化.对于所有样品,在2K以上均没有观测到长程磁有序,其磁化率在100 K以上均满足居里-外斯定律,同时对该体系的磁化率结果进行了详细讨论.     

EuSr2Ru1-xTaxCu2O8体系的超导电性和磁性质

通过对EuSr2Ru1-xTaxCu2O8(x=0, 0.1, 0.2, 0.5和1.0)体系的结构、电阻和磁化强度的观测,结果发现:EuSr2RuCu2O8(x=0)样品在130.2K以下呈现铁磁有序,在10K时发生了超导转变,并呈现典型的欠掺杂高温超导体特征,随着Ta对Ru替代浓度x值的增加,铁磁相变温度和超导临界温度均下降.同时,对该体系中的元素替代效应,及其磁有序和超导电性的共存进行了详细讨论.     

Eu替代浓度对Y1-xEuxBa2Cu3O7-δ体系电子结构和超导电性的影响

利用正电子湮没和X-射线衍射技术,对Eu替代Y位的Y1-xEuxBa2Cu3O7-δ(x=0.1,0.2,0.3,0.4,0.5,0.6,0.8,1.0)超导体系进行了系统研究,分析了体系的电子结构和正电子寿命参数的变化特征.给出了超导转变温度Tc与Eu替代浓度x之关联.结果表明:所有Y1-xEuxBa2Cu3O7-δ样品均保持与YBa2Cu3O7-δ(Y-123)样品相同的单相正交结构;正电子平均寿命τm随Eu替代浓度x的增加而增加,反映了Eu替代Y位引起晶胞结构参量的变化不仅改变了Y位的电子密度,同时也影响了Cu-O链周围的电子密度分布及Cu-O面的层间耦合.     

Sr3P2-xVxO8:Eu（0≤x≤2.0）的制备及其发光性能

研究了B位掺杂的Sr3P2-xVxO8(0≤x≤2.0)基质和Eu3+掺杂Sr3-3yEu2yP1.2V0.8O8(0相似文献   

Co(S1-xSex)2系统中的铁磁量子相变

针对Co(S1-xSex)2系统在x=0.11附近发生的铁磁金属到顺磁金属相变,制备了一系列不同Se替代浓度的多晶样品.通过对其结构和电阻率-温度ρ(T)关系的系统观测,结果发现,样品铁磁相变温度TC随着Se替代浓度x值的增加,以(1-x)1/2关系单调下降,其二级铁磁相变转变为一级相变;在临界浓度x=0.11附近,其ρ(T)关系由Fermi液体行为转变为非Fermi液体行为.作者认为,Co(S1-xSex)2系统在x=0.11附近发生的是一种量子相变,在该量子相变点附近零温度下的自旋量子涨落导致其ρ(T)关系的反常行为.     

金属间化合物Ce(Ni1-xCux)2Al3的制备和热电特性

我们以Cu替代Ni,制备了金属间化合物Ce(Ni-xCux)2Al3(x=0.0,0.1,0.2,0.3,0.4),利用粉末X射线衍射法(XRD)对样品进行了表征.电阻率ρ(T)和热电势S(T)测量结果表明,由于Cu替代Ni使得单胞体积和3d传导电子数目增加,4f电子与传导电子之间的杂化减弱.近藤温度T-K随着x的增加而降低,体系趋于形成重电子系统.     

红色荧光粉NazCa1-x-2y-zBiyMoO4∶Eu3+x+y发光研究

采用高温固相法制备系列红色荧光粉Naz Ca1-x-2y-zBiyMoO4 ∶ Eu3+x+y (y,z=0,x=0.24,0.26,0.30,0.34,0.38; x=0.30,y=0.01,0.02,0.03,0.04,0.05,0.06,0.07,z=0; x=0.30,y=0.04,z=0.38).用X射线粉末衍射(XRD)法测试了所制样品晶相结构.采用荧光光谱仪对样品的发光性能进行了表征,结果表明:当Eu3+单掺杂量浓度x=0.30时,荧光粉(Ca0.70 MoO4∶Eu3+0.30)的发光强度最强;当Eu3+-Bi3+共掺杂量浓度y=0.03时,电荷迁移带(CTB)强度达到最强,而对于Eu3+特征发射峰,当共掺杂浓度y＜0.03时,位于393 nm处的激发峰强度比464 nm强,共掺浓度y＞0.03时,464 nm峰比393 nm峰强,共掺浓度为y=0.04时,393和464 nm处两峰位置强度都达到最强.作为电荷补尝剂的Na2 CO3掺入上述荧光粉中后,荧光粉激发和发射强度明显地增强.结果表明,通过调节Bi3+ /Eu3+掺杂比例可以改变位于近紫外光393 nm和蓝光区464 nm处激发光相对强度.     

Magnetic ordering in HoRu2Si2, HoRh2Si2, TbRh2Si2 and TbIr2Si2 by neutron diffraction

Neutron diffraction study of polycrystalline HoRu₂Si₂, HoRh₂Si₂, TbRh₂Si₂, and TbIr₂Si₂ was performed in the temperature range between 4.2 and 300 K. For HoRu₂Si₂ the magnetic spin alignment of a linear transverse wave mode below the Néel temperature 19 K is observed. This static moment wave is propagating along the b-axis with k=(0, 0.2, 0) and is polarized in the c-axis. The root-mean-square and maximum saturation moments per Ho atom are 9.26 and 13.09μ_B, respectively. HoRh₂Si₂, TbRh₂Si₂ an TbIr₂Si₂ are simple collinear antiferromagnets of +-+- type with Néel temperatures of (27±1), (98±2) and (72±3) K, respectively. For TbRh₂Si₂ and TbIr₂Si₂ magnetic moments are localized on RE ions only and are aligned along the tetragonal axis, while for HoRh₂Si₂ they form an angle ø = (28±3)°.     

μ+SR study of LaNi2As2, URh2Si2 and CeRh2Si2

Muon spin relaxation experiments have been carried out in the paramagnetic and magnetically ordered states of URh₂Si₂ and CeRh₂Si₂. As the magnetic structure of these compounds is well known, these measurements can help to characterise their magnetic properties probed by μSR and to understand the μSR results of the heavy fermion compounds of the same crystallographic family. Our measurements show that the muons occupy two different crystallographic sites. The spectra of URh₂Si₂ and CeRh₂Si₂ in the magnetically ordered states are very different, probably reflecting their different magnetic structures. The spectra obtained on CeRh₂Si₂ are similar to the published spectra of the heavy fermion compound CeCu_2.1 Si₂. Muon spin rotation measurements on LaNi₂As₂ indicate that the muon is diffusing at 150 K.     

13C-selective IRMPD of CBr2F2/Cl2 and CCl2F2/Br2 systems

The CO₂ TEA laser irradiation of CBr₂F₂ in the presence of Cl₂ yielded ¹³C-enriched CBrClF₂ and ¹³C-enriched CCl₂F₂ under selected experimental conditions. As the photolysis proceeded, the ¹³C concentration of CBrClF₂ decreased gradually and that of CCl₂F₂ increased up to 90% or higher. These results can be explained by the mechanism involving the secondary ¹³C-selective IRMPD of the primary product CBrClF₂. On the other hand, the carbon-containing product for a CCl₂F₂/Br₂ system was only CBrClF₂; the further IRMPD of which probably regenerated CBrClF₂ in the presence of Br₂. The decomposition probabilities of ¹²C- and ¹³C-containing molecules in both systems were measured as functions of laser line, laser fluence, and reactant pressures.     

Magnetostriction of SmMn2Ge2 and GdMn2Ge2 intermetallic compounds

Longitudinal and transverse magnetostrictions of polycrystalline samples of intermetallic compounds RMn₂Ge₂ (R=Sm or Gd) are measured in pulsed magnetic fields up to 250 kOe. It is found that linear magnetostrictive strains of about 10^?3 arise in a temperature range in which the magnetic field causes a change in the magnetic state of a manganese magnetic subsystem. The results obtained are described within the model of a two-sublattice ferrimagnet with a negative exchange interaction in the manganese subsystem in terms of a strong dependence of this interaction on interatomic distances.     

Polar optic phonons in Hg2Cl2 and Hg2Br2

Far infrared (30–430 cm^?1) reflectivity measurements of Hg₂Cl₂ and Hg₂Br₂ single crystals have been performed in polarized light. The spectra, which are in agreement with group-theoretical predictions, were analyzed by the oscillator fitting procedure and Kramers-Kronig method. The results are compared with the existing data from other measurements and the large anisotropy of polar modes is briefly discussed. The polarization vectors of all long-wavelength symmetry modes were determined group-theoretically.     

Superconductivity in LaPd_2Bi_2 with CaBe_2Ge_2-type structure

正Since the discovery of superconductivity in LaFeAsO_(1-x)F_x,the high-T_c iron-based superconductors have been extensively studied from both experimental and theoretical viewpoints [1-8]. However, the mechanism of the unconventional superconductivity is still to be resolved. To     

Structural,magnetic and neutron diffraction studies on TbFe2-TbAl2, TbCo2-TbAl2 and HoCo2-HoAl2

Both pseudobinary systems exhibit large homogeneous regions of cubic and hexagonal Laves phases. Ordering tendencies on crystallographic sites between Al and the transition metals are observed in the hexagonal type.Electron transfer to the transition metals quenches their moments so that they become nonmagnetic at high Al concentrations. The peculiarities in the mechanism of magnetization which appear in rare earth dialuminides when Al is replaced by a transition metal have been studied in detail at cryogenic temperatures.The first replacement of Al results in a decrease in saturation moment. Neutron diffraction verifies the low ordered rare earth sublattice moments and reveals the ‘lost part’ as a disordered component. Considerable magnetic hardness develops in certain regions of concentration often connected with spontaneous increases in magnetization with field. All available evidence suggests the presence of unusual domain wall effects to be responsible for this effect. High remanences develop in both the hexagonal and in the cubic structures in the intermediate region. The development of disordered magnetic components is connected either with the disorder on crystallographic sites or changes in the free electron concentration.