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111.
112.
This paper reports that the m-plane GaN layer is grown on (200)-plane LiAlO2 substrate by metal-organic chemical wpour deposition (MOCVD) method. Tetragonal-shaped crystallites appear at the smooth surface. Raman measurement illuminates the compressive stress in the layer which is released with increasing the layer's thickness. The high transmittance (80%), sharp band edge and excitonic absorption peak show that the GaN layer has good optical quality. The donor acceptor pair emission peak located at -3.41 eV with full-width at half maximum of 120 meV and no yellow peaks in the photoluminescence spectra partially show that no Li incorporated into GaN layer from the LiAlO2 substrate. 相似文献
113.
A multiple image cryptosystem based on different apertures in an optical set-up under a holographic arrangement is proposed. The system is a security architecture that uses different pupil aperture mask in the encoding lens to encrypt different images. Based on this approach multiple encryption is achieved by changing the pupil aperture arrangement of the optical system among exposures. In addition to the classical speckle phase mask, the geometrical parameters characterizing the apertures are introduced to increase the system security. Even when an illegal user steals the speckle phase mask, the system cannot be broken into without the correct pupil geometrical parameters. The experimental set-up is based on a volume photorefractive BSO crystal as storing device. Information retrieval is done via a phase conjugation operation. We also have to stress that the multiple storage under this scheme, is only possible with the help of the aperture mask. Simulation and experimental results are further introduced to verify the proposed method. 相似文献
114.
以CF4和C6H6的混合气体作为气源,在微波电子回旋共振化学气相沉积(ECRCVD)装置中制备了氟化非晶碳薄膜(aC:F),并在N2气氛中作了退火处理以考察其热稳定性.通过傅里叶变换红外吸收谱和紫外可见光谱获得了薄膜中CC双键的相对含量和光学带隙,发现膜中CC键含量与光学带隙之间存在着密切的关联,在高微波功率下沉积的氟化非晶碳膜具有低的光学带隙和较好的热稳定性.
关键词:
氟化非晶碳膜
光学带隙
退火温度
热稳定性 相似文献
115.
ON THE UNIQUENESS OF THE WEAK SOLUTIONS OF A QUASILINEAR HYPERBOLIC SYSTEM WITH A SINGULAR SOURCE TERM
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This paper is a continuation of the authors'previous paper[1].In this paper the authorsprove,assuming additional conditions on the initial data,some results about the existence anduniqueness of the entropy weak solutions of the Cauchy problem for the singular hyperbolicsystem a_t+(au)_x_2au/x=0,u_t+1/2(a~2+u~2)_x=0,x>0,t≥0. 相似文献
116.
For a ? R\alpha \in \mathbf{R}, the class of a-\alpha -order spherical harmonic functions in an open set W í\Omega \subseteq Sn-1\mathbf{S}^{n-1}, Ha(W)H^{\alpha }(\Omega ) is defined as the C2-C^{2}-solutions of Dau=0\Delta _{\alpha }u=0; where Da=Ds+a(n+a-2)\Delta _{\alpha }=\Delta _{s}+\alpha (n+\alpha -2) is the spherical Laplace--Beltrami operator of order a\alpha and Ds\Delta _{s} is the radially independent part of the Laplace operator. We obtain a Green's integral formula for the functions in Ha(W)H^{\alpha }(\Omega ) with kernel expressed as a Gegenbauer function. As generalizations, higher order spherical iterated Dirac operators are defined in a polynomial form. Integral representations of the null solutions to these operators and an intertwining formula relating these operators on the sphere and their analogues in Euclidean space are presented. 相似文献
117.
118.
E. C. Ferreira J. A. P. da Costa J. A. K. Freire G. A. Farias V. N. Freire 《Applied Surface Science》2002,190(1-4):191-194
Confined excitons in non-abrupt GaAs/AlxGa1−xAs single quantum wells are studied. The graded interfaces are described taking into account fluctuations in their thickness a and positioning with respect to the abrupt interface picture. Numerical results for confined (0,0),(1,1) and (0,2) excitons in GaAs/Al0.3Ga0.7As quantum wells show that while the interfacial fluctuations produce small changes (<0.5 meV) in the exciton binding energies, the confined exciton energies can be red- or blue-shifted as much as 25 meV for wells with mean width of 50 Å and 2 ML wide interfaces. 相似文献
119.
本文采用椭圆偏振光谱法研究了剂量为1×1016—3×1012cm-2的As+注入硅,及其在700℃退火后的光学性质。得出:当As+注入剂量增大到某一程度后,便呈非晶特性。低于临界剂量的样品,其n-λ,ε2-λ关系曲线随剂量的增大而往下方移动,呈有规律变化;退火后,在大于4000?波段,n-λ与ε2-λ曲线基本恢复到单晶硅状态。但在小于4000?的紫外区却未完全恢复,注入剂量越大,偏离单晶硅就越大。并指出,紫外光区是离子注入硅的信息敏感区;用有效质量模型计算出注入剂量与损伤度的关系。计算结果与实验符合得较好。
关键词: 相似文献
120.