Theoretical study on line source laser-induced surface acoustic waves in two-layer structure in ablative regime

The generation of ultrasound in film–substrate system by a laser line source is studied in the case of ablation mechanism, which can be realized by adding a liquid layer at the excitation point. The time domain displacement can be yielded by the numerical jointed inversed Laplace–Fourier transformation technique. The typical surface acoustic waves (SAW) of two layer structures, slow film on fast substrate and fast film on slow substrate, are obtained and the effect of the propagation distance and the thickness of the film on the SAW are given.     

SiGe (Ge-dot) heterojunction phototransistors for efficient light detection at 1.3–1.55 μm

The aim of this work is to develop a Si/SiGe HBT-type phototransistor with several Ge dot layers incorporated in the collector, in order to obtain improved light detectivity at 1.3–1.55 μm. The MBE grown HBT detectors are of n–p–n type and based on a multilayer structure containing 10 Ge-dot layers (8 ML in each layer, separated by 60 nm Si spacer) in the base-collector junction. The transistors were processed for normal incidence or with waveguide geometry where the light is coupled through the edge of the sample. The measured breakdown voltage, BV_ceo, was about 6 V. Compared to a p–i–n reference photodiode with the same dot layer structure, photoconductivity measurements show that the responsivity is improved by a factor of 60 for normal incidence at 1.3 μm. When the light is coupled through the edge of the device, the detectivity is even further enhanced. The measured photo-responsivity is more than 100 and 5 mA/W at 1.3 and 1.55 μm, respectively.     

Radon变换和衰减Radon变换的分析研究

衰减Radon变换出现在单光子放射型计算机层析成像中。本文首先回顾和研究了Radon变换和衰减Radon变换及其反演的有关结论，进而提出了Tretiak-Metz结果的一种新证明方法，对于一般对象，本文用变换方法非滤子背投影法导出了衰减Radon变换的反演公式。     

分段函数的分类及分离型分段函数与初等函数之间的关系

将分段函数划分为连结型分段函数 ,分离型分段函数和它们的组合形式三种类型 ,得到了分离型分段函数是初等函数的充分必要条件 ,完整地解决了分离型分段函数与初等函数之间的关系 ,并且给出了初等函数在其任一截取集上的限制函数 (截取函数 )仍然是初等函数的结果     

镁掺杂对In2O3电导和气敏性能的影响

用共沉淀法制备了Mg2 + 掺杂的In2 O3 纳米粉 ,研究了镁掺杂对In2 O3 电导和气敏性能的影响 .结果表明 :MgO和In2 O3 间可形成有限固溶体In2 -xMgxO3 (0≤x≤ 0 .40 ) ;MgIn× 电离的空穴对材料导带电子的湮灭 ,使掺镁纳米粉的电导变得很小 ;n(Mg2 + )∶n(In3 + ) =1∶2共沉淀物于 90 0℃下热处理 4h ,用所得的纳米粉制作的传感器在 32 0～ 370℃下 ,对 45 μmol/LC2 H5OH的灵敏度达 10 2 .5 ,为相同浓度干扰气体Petrol的 12倍多 .     

Stability of Methods for Matrix Inversion

Inversion of a triangular matrix can be accomplished in severalways. The standard methods are characterized by the loop ordering,whether matrix-vector multiplication, solution of a triangularsystem, or a rank-1 update is done inside the outer loop, andwhether the method is blocked or unblocked. The numerical stabilityproperties of these methods are investigated. It is shown thatunblocked methods satisfy pleasing bounds on the left or rightresidual. However, for one of the block methods it is necessaryto convert a matrix multiplication into the solution of a multipleright-hand side triangular system in order to have an acceptableresidual bound. The inversion of a full matrix given a factorizationPA=LU is also considered, including the special cases of symmetricindefinite and symmetric positive definite matrices. Three popularmethods are shown to possess satisfactory residual bounds, subjectto a certain requirement on the implementation, and an attractivenew method is described. This work was motivated by the questionof what inversion methods should be used in LAPACK.     

3族新的不含紧优与几乎紧优的有向双环网络无限族

给出了3族新的不含紧优与几乎紧优的有向双环网络.     

多约束二阶非线性常微分方程极值点的数值求解法

本文对科学研究和工程应用问题中常见的多约束二阶非线性常微分方程的极值点进行了讨论 ,提出了一种数值解法 .以带有化学反应项的热传导方程为例 ,给出了相应的计算结果 .     

关于拟AP内射模的一些研究

Let R be a ring. R is called right AP-injective if, for any a ∈ R, there exists a left ideal of R such that lr(a) = Ra (?) Xa. We extend this notion to modules. A right .R-module M with 5 = End(MR) is called quasi AP-injective if, for any s ∈ S, there exists a left ideal Xs of S such that ls(Ker(s)) = Ss (?) Xs. In this paper, we give some characterizations and properties of quasi AP-injective modules which generalize results of Page and Zhou.     

无叶扩压段型线对离心压气机性能的影响

本文设计了无叶扩压段轮盖侧型线,并采用CFD软件数值模拟了采用两种不同轮盖侧型线结构的离心压气机级．分析了无叶扩压段内部的流动结构和熵的分布．计算结果说明无叶扩压段轮盖侧型线对上游叶轮、下游叶片扩压器以及离心压气机级性能有较大影响．