第一讲中子散射与散裂中子源

中子散射是研究物质微观结构和动态的理想工具之一,广泛地应用于凝聚态物质研究和应用的众多学科领域.散裂中子源能是新一代的加速器基脉冲中子源,能为中子散射提供高通量的脉冲中子.文章简明地介绍了中子散射的特点和它作为物质结构和动态探针的优越性,以及散裂中子源的基本原理、发展状况和多学科的应用优势.我国计划建设的散裂中子源CSNS中,靶站将由多片钨靶、铍/铁反射体和铁/重混凝土生物屏蔽体组成.质子束功率100kW下,脉冲中子通量约为2.4×1016n/cm2/s.第一期将设计建造高通量粉末衍射仪、高分辨粉末衍射仪、小角散射仪、多功能反射仪和直接几何非弹性散射仪等五台典型的中子散射谱仪,以覆盖大部分的中子散射研究领域.     

不连续双斜向内肋管纵向涡流动显示

利用染色线流动显示方法,显示并分析了不同雷诺数下不连续双斜向内肋管管内流场。流动显示实验结果表明不连续双斜向内肋管管内存在较强的贴近壁面的纵向涡,纵向涡沿流向可持续约一倍管径距离,并且纵向涡的强度随雷诺数的增加而增强。     

抽运激光在光靶中的局域及其对X射线激光特性的影响

新型X射线靶设计为:由SiO2和TiO2组成具有12个周期的一维光子晶体,在它的中间嵌入光靶材料层作为缺陷层,SiO2,TiO2和光靶层的光学厚度分别为λ4、λ4和λ2,λ为抽运激光波长.与普通平板光靶相比,当抽运光垂直照射到这种光靶时,靶层内部的光强将提高2个数量级,所以抽运激光的阈值强度将降低2个数量级,这有利于X射线激光的小型化.在同样的抽运激光照射下,X射线激光的强度将提高4个数量级,转换效率也将提高约4个数量级.由于平均电离度随抽运激光强度的提高而提高,所以采用这种光靶有利于使X射线激光向短波长推进. 关键词： X射线激光 光子晶体 光波局域     

CCD摄像机大视场光学镜头的设计

为提高CCD摄像机的成像质量，同时使镜头结构紧凑、小型化，在大视场光学镜头的设计中，引入标准二次曲面和偶次非球面。根据初级像差理论，分析了非球面的位置、初始结构参数的求解规律。通过理论计算和ZEMAX光学设计软件的优化，给出工作波长为0.4～0.7μm、全视场角为80°，相对孔径为1∶1.5的镜头设计实例。该镜头由7块镜片组成，包括一个标准二次曲面和两个8次方非球面；在40lp/mm空间频率处的MTF值超过0.85，全视场畸变小于3％，像质优良     

Effect of end groups on complexation kinetics between cyclodextrins and guest polymers

α‐Cyclodextrin (α‐CD) has been complexed with various poly(ethylene glycol) (PEG) derivatives in aqueous solution. It has been found that the end groups of PEG derivatives affect the complexation kinetics greatly, but have only a little influence on the thermodynamic behavior. By increasing the hydrophobicity of end groups, the complexation speeds up rapidly. On the other hand, the bulky end groups slow down the threading of polymeric guests into the cavity of CD. By changing the hydrophobicity and the size of end groups, the complexation rate can be adjusted in the range of several orders of magnitudes, which should be quite useful in the design of new supramolecular systems. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 2050–2057, 2006     

延迟和相关效应对Ne原子2p53s1,3P10-2p6 1S0跃迁的影响

利用多组态Dirac-Fock(MCDF)方法,系统地研究了延迟和相关效应对中性Ne原子2p53s1,3P01-2p61S0电偶极共振和复合跃迁的能量以及跃迁几率(寿命)的影响,给出了相应的跃迁能和辐射寿命,并与最新的实验观测和其他理论计算结果进行了比较.     

New Jacobian Elliptic Function Solutions of Modified KdV Equation: Ⅱ

Recently, we obtained thirteen families of Jacobian elliptic function solutions of mKdV equation by usingour extended Jacobian elliptic function expansion method. In this note, the mKdV equation is investigated and anotherthree families of new doubly periodic solutions (Jacobian elliptic function solutions) are fbund again by using a newtransformation, which and our extended Jacobian elliptic function expansion method form a new method still called theextended Jacobian elliptic function expansion method. The new method can be more powertul to be applied to othernonlinear differential equations.     

Improving Construction for Connected Dominating Set with Steiner Tree in Wireless Sensor Networks

The connected dominating set plays an important role in ad hoc wireless networking. Many constructions for approximating the minimum connected dominating set have been proposed in the literature. In this paper, we propose a new one with Steiner tree, which produces approximation solution within a factor of 6.8 from optimal. This approximation algorithm can also be implemented distributedly.     

Formation of Interfacial Layers in LaAlO3/Silicon during Film Deposition

We have studied the interracial reactions between amorphous LaAlO3 thin films and Si substrates, using high- resolution transmission electron microscopy and x-ray photoelectron spectroscopy. It has been shown that the interracial layer between LaAlO3 film and Si substrate chemical states show that the ratio of La 4d3/2 to Al 2p is SiLaxAlyOz. The depth distributions of La, Si and Al of the interfacial layer remains unchanged with the depth compared to that of the LaAlO3 film. Moreover, the Si content, in the interracial layer gradually decreases with increasing thickness of the interracial layer. These results strongly suggest that the Al element is not deficient in the interracial layer, as previously believed, and the formation of a SiLaxAlyOz interracial layer is mainly due to the diffusion of Si from the substrate during the LaAlO3 film deposition. With the understanding of the interracial layer formation, ones can control the interface characteristics to ensure the desired performances of devices using high-k oxides as gate dielectrics.     

多段构件组成的压杆平面内稳定

分析由若干段等截面或者变截面构件组成的压杆平面内稳定问题．从由三段等截面构件组成的压杆平面内稳定问题出发，对两端为变截面、中间为等截面构件组成的压杆的平面内稳定问题进行了分析，得出和两端为等截面构件情况类似的屈曲荷载计算公式．并对两端固接的情况进行了研究分析．