基于高介电常数基板和金属结构负折射材料的设计,仿真与验证

通过将单回路镜像对称开口金属环结构印制在高介电常数基板上,实现了一种金属含量比传统负折射材料更少,"双负"通带比全介质负折射材料更宽的负折射材料.分析了高介电常数基板产生负介电常数以及"双负"通带形成的机理,通过仿真实验分析了影响"双负"通带的因素.通过制作样品验证了这一机理实现"双负"的可行性,理论分析与实验结果都表明这种方法可实现较宽频段内的"双负"通带. 关键词： 负折射材料 负介电常数 负磁导率 介质谐振器原理     

基于互注入半导体激光器的混沌输出产生17.5 Gbit/s随机码

采用两个借助光纤连接的相互注入半导体激光器,实验获取了10 GHz超宽带混沌种子信号.通过8-bit模数转换器将混沌信号转换为二进制数据流,并进行进一步的逻辑异或处理和舍弃最高有效位操作,最终获得了能顺利通过美国国家标准与技术研究院(National Institute of Standard and Technology,简记为NIST)800-22标准测试以及Diehard测试,速率达17.5 Gbit/s的高速随机码. 关键词： 随机码 混沌激光 互注入半导体激光器     

掺Bi钨酸镉单晶体发光特性的研究

用坩埚下降法(Bridgman)生长出了Bi离子掺杂的CdWO₄单晶.测定了晶体不同部位的吸收光谱、发射光谱和X射线电子能谱(XPS).Bi离子的掺入引起CdWO₄晶体的吸收边从345 nm红移到399 nm.在311 nm, 373 nm,808 nm和980 nm光的激发下,分别观测到中心波长为470 nm,528 nm,1078 nm和较弱的1504 nm四个不同发射带.Bi:CdWO₄单晶的XPS谱分别与Bi₂ 关键词： Bi离子 荧光光谱 X射线电子能谱 4单晶')" href="#">CdWO₄单晶     

熔石英亚表面杂质颗粒附近光场调制的三维模拟

熔石英亚表面缺陷是光学材料低损伤阈值的主要因素之一.本文建立了熔石英亚表面三维球形杂质颗粒模型,采用三维时域有限差分方法对杂质附近的光场进行了数值模拟,分析了杂质的介电常数与尺寸对光强增强因子的影响,结果显示:介电常数小于熔石英的杂质,其光强增强因子不随尺寸、介电常数的改变而改变,均保持为4左右;当介电常数为6.0时,半径为1.5λ,2λ及2.5λ的杂质,相应的光强增强因子分别为50.1588,73.3904及102.9953,即增强因子随杂质尺寸的增大而增大;恰 关键词： 杂质颗粒 三维时域有限差分 数值计算 光强增强因子     

Dual-band optical filter based on a single microdisk resonator

We propose and experimentally demonstrate a dual-band optical filter based on a single microdisk resonator. An analytical model is built based on the transfer matrix method and is applied to simulate the properties of such a device. Competition and interference of the dual modes in the resonator lead to dual-band filtering with high isolation. As the finite-difference time-domain simulation illustrates, two low-order resonant modes can be effectively triggered by optimizing the waveguide width and spacing gap between the compact resonator and waveguides. In experiment, a double side-coupled microdisk resonator was fabricated on a nanophotonic silicon-on-insulator platform, and dual-band bandpass filtering is realized with an optical isolation higher than 20 dB and an insertion loss lower than 2 dB. The experimental results agree well with our modeling results.     

Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD

In_0.82Ga_0.18As epilayers were grown on InP substrates using a two-step growth technique by LP-MOCVD. A homogeneous low-temperature (450 °C) In_0.82Ga_0.18As buffer layer was introduced to improve the crystalline quality of epilayers. The influence of low-temperature buffer layer deposition condition, such as thermal annealing duration, on the crystalline quality of the In_0.82Ga_0.18As epilayer was investigated. Double-crystal X-ray diffraction measurement, Hall measurement, and Raman scattering spectrum were used to evaluate the In_0.82Ga_0.18As epilayers. Atomic force microscope was used to study the surface morphology. It is found that the In_0.82Ga_0.18As epilayer, with buffer layer thermal annealing for 5 min, exhibits the best crystalline quality. The change of the surface morphology of the buffer layer after thermal annealing treatment was suggested to explain the phenomenon.     

Effect of reaction systems and surfactant additives on the morphology evolution of hydroxyapatite nanorods obtained via a hydrothermal route

Well-dispersed hydroxyapatite (HA) nanorods with different morphologies were synthesized by a hydrothermal method in oleic acid, ethanol and water reaction system, and the surfactant assisted modifications effect was also comparatively studied. The structure and morphology of samples were characterized using X-ray diffraction (XRD), Fourier transform infrared (FT-IR) spectroscopy and transmission electron microscopy (TEM), respectively. The effect of reaction systems and surfactant additives on the morphology evolution of HA nanorods were discussed in detail. The results showed that the controlled experimental conditions in the systems, such as the content ratio of oleic acid/ethanol, pH value and the content ratio of Ca/P source had an significant effect on the morphology evolution of as-prepared HA nanorods. Further, the selected surfactant additives, such as cetyltriethylammnonium bromide (CTAB), sodium dodecyl sulfate (K12) also play an important role in the formation of the uniform morphology of HA nanorods. Some possible formation mechanisms of the HA nanorods in the present reaction systems is proposed.     

The improvement of moisture resistance and thermal stability of Ca3SiO4Cl2:Eu phosphor coated with SiO2

Green-emitting phosphors Ca₃SiO₄Cl₂:Eu²⁺ were prepared by the high temperature solid-state method. Sol-gel process was adopted to encapsulate the as-prepared phosphors with tetraethylorthosilicate (TEOS) as silicon coating reagent. Fluorescence spectrometer, scanning electron microscopy (SEM) and powder X-ray diffraction (XRD) patterns were employed to characterize the emission spectra, the surface morphologies and the phase structures, respectively. The chemical stability testing was operated by the method of soaking the phosphors in deionized water and roasting them at different temperatures. The results indicated that the surfaces of the green phosphors were evenly coated by SiO₂ and the phase structure of the coated phosphors remained the same as the uncoated samples. The luminance centre of Eu²⁺ did not shift after surface treatment and the luminance intensity of coated phosphors was lower than that of the uncoated samples. The results demonstrated that the water-resistance stability of the coated phosphor was improved to some degree because the pH value and the luminance intensity variation were both smaller than the uncoated phosphor after steeping within the same time. Moreover, the thermal stability of coated phosphors was enhanced obviously compared to the original samples based on the temperature dependent emission spectra measurement.