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熔石英亚表面杂质颗粒附近光场调制的三维模拟
引用本文:花金荣,李莉,向霞,祖小涛.熔石英亚表面杂质颗粒附近光场调制的三维模拟[J].物理学报,2011,60(4):44206-044206.
作者姓名:花金荣  李莉  向霞  祖小涛
作者单位:电子科技大学物理电子学院,成都 610054
基金项目:国家高技术研究发展计划(批准号:2007AA804233,2008AA8040508),电子科技大学青年基金重点项目(批准号:L08010401JX0806),国家自然科学基金和中国工程物理研究院联合基金(批准号:11070008)资助的课题.
摘    要:熔石英亚表面缺陷是光学材料低损伤阈值的主要因素之一.本文建立了熔石英亚表面三维球形杂质颗粒模型,采用三维时域有限差分方法对杂质附近的光场进行了数值模拟,分析了杂质的介电常数与尺寸对光强增强因子的影响,结果显示:介电常数小于熔石英的杂质,其光强增强因子不随尺寸、介电常数的改变而改变,均保持为4左右;当介电常数为6.0时,半径为1.5λ,2λ及2.5λ的杂质,相应的光强增强因子分别为50.1588,73.3904及102.9953,即增强因子随杂质尺寸的增大而增大;恰 关键词: 杂质颗粒 三维时域有限差分 数值计算 光强增强因子

关 键 词:杂质颗粒  三维时域有限差分  数值计算  光强增强因子
收稿时间:5/5/2010 12:00:00 AM

Three-dimensional numerical simulation of light field modulation in the vicinity of inclusions in silica subsurface
Hua Jin-Rong,Li Li,Xiang Xia,Zu Xiao-Tao.Three-dimensional numerical simulation of light field modulation in the vicinity of inclusions in silica subsurface[J].Acta Physica Sinica,2011,60(4):44206-044206.
Authors:Hua Jin-Rong  Li Li  Xiang Xia  Zu Xiao-Tao
Institution:Institute of Physics and Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China;Institute of Physics and Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China;Institute of Physics and Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China;Institute of Physics and Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China
Abstract:One of the important factors of the low laser induced damage threshold is the defects in the subsurface of fused silica. The three-dimensional model of a spherical inclusion in the subsurface is established in this study. Three-dimensional finite-difference time-domain method is used to calculate and simulate the light field distribution in the vicinity of inclusions. The effects of dielectric constant and inclusion size are analyzed, separately. The results show that the light intensity enhancement factor (LIEF) does not change with the size and the dielectric constant of the inclusions when the dielectric constant is smaller than that of fused silica, where the LIEF is kept at about 4. When the dielectric constant is 6.0, the LIEFs are 50.1588, 73.3904 and 102.9953 for the inclusions with sizes of 1.5λ, 2λ and 2.5λ respectively. When the inclusion size is constant, the LIEF will increase with the increase of dielectric constant. The light enhancement for the round inclusions is much higher than that for the ellipsoidal inclusions. Therefore, the round inclusions with large size and dielectric constant significantly enhance the electric field.
Keywords:inclusion  3D FDTD  numerical calculation  LIEF
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