渗透蒸发脱盐的研究

将选择性透过膜和汽化相结合的分离过程是当前的研究热点,其中采用低热导率、疏水性多孔膜的过程称膜蒸馏,而采用非多孔性半透膜的过程则称渗透蒸发。将该分离过程用于盐水脱盐已有很多报道,并已建成中试设备,但采用的大多是膜蒸馏,所用膜的成本很高。本文研究制了一种价廉并带有致密层的非对称性含钠离子聚乙烯醇(PVA)-聚乙二醇(PEG)分离膜,并用该膜对渗透蒸发脱盐进行了初步研究。 1 实验 1.1 膜制备 将一定配比的PVA与PEG及钠盐水溶液在适当温度下混溶,加入适量醛类交联剂,数分钟后在选定的基材上流涎成膜,室温下自然晾干,再经35℃～50℃控温红外线干燥。 1.2 膜结构及脱盐流程 扫描电镜拍摄的膜断面形貌图像(图1)表明,该膜为非对称膜,表层厚约13μm,其中厚约2～3/μm的上表层为疏松结构,下表层为致密结构。将该类膜用于3.5％NaCl水溶液脱盐,运行4h后再漂洗、干燥作断面Na元素波谱线分析(图2)发现,在膜下层(右侧)厚约30μm层内检测不到Na元素。脱盐流程见文献。     

强磁场对四苯基卟啉及其Co(Ⅱ)/Zn(Ⅱ)配合物的影响

为研究强磁场对卟啉类化合物的影响,以四苯基卟啉(TPP)为研究对象,比较分析了无外加磁场和强磁场条件下TPP的结晶,及Co~(2+)、Zn~(2+)与TPP的配位反应。采用X射线粉末衍射测试不同磁场强度下获得的TPP晶体,紫外分光光度计快速测定了不同磁场强度下配合物产率,并分析了配位反应的动力学。TPP的结晶度随磁场强度的增强而提高,晶体尺寸随磁场强度的增加而增大;随磁场的增强,四苯基钴卟啉(CoTPP)和四苯基锌卟啉(ZnTPP)的产率下降,但两者的反应动力学不受磁场影响,其反应速率随磁场强度提高而下降。由研究结果可知,强磁场有利于四苯基卟啉的结晶取向,四苯基卟啉在溶液中垂直于磁场取向是配位反应速率降低的主要原因,随磁场强度的增加,四苯基卟啉的取向程度提高。     

超支化聚硅(碳/氧)烷的研究进展

总结了近十年来超支化聚有机硅(碳/氧)烷的研究进展,其中着重综述了硅氢加成反应、亲核取代反应和脱氢反应在制备超支化聚硅(碳/氧)烷的过程中各种因素对反应过程及产物物化性能的影响。     

胶束增强型聚电解质微胶囊的制备

采用杂化碳酸钙微球作为模板, 利用LbL技术, 选择聚苯乙烯磺酸钠(PSS), 烯丙基胺的盐酸盐(PAH)和二烯丙基二甲基胺盐酸盐(PADA)聚电解质, 分别组装了PAH/PSS(弱/强)聚电解质胶囊和PADA/PSS(强/强)聚电解质微胶囊. 除去模板后得到了球形良好、分散均匀的聚电解质微胶囊. 研究结果表明, 利用杂化碳酸钙微球作为聚电解质微胶囊的模板, 得到的微胶囊的囊壁厚而致密, 同时, 由于组装采用的聚电解质的种类不同, 囊壁的微观形貌有较大差异.     

利用LB技术以寡聚DNA为模板构建CdS纳米结构

利用Langmuir-Blodgett技术制备了十八胺（ODA）／十聚腺嘌呤（oligo-A10)单分子膜，并以其为模板制备了不同形状的Cds纳米结构，结果表明以在低膜压下转移的寡聚DNA单层为模板可诱导生成线形的Cds纳米结构，而以在主膜压下转换的寡聚DNA单层膜板得到的是Cds的球形结构聚集体。     

碘掺杂的3-乙基-5-[2-(3-乙基-2苯并噻唑啉基)亚乙基]罗丹宁的结构与电性能

The merocyanine dye 3-ethyl-5-(2-(3-ethyl-2-benzothiazolinylidene)-ethylidene)-rhodanine (BTER) known as Agfa-10 has been found to have a good photoconductivity as solution cast film. In this paper iodine-doped BTER was obtained by doping with iodine vapor. Its structure was investigated with the following characteristies. 1 The doped iodine had been excited as I_3~- anion. 2 Because the electron located on the sulphur atom was transferred to iodine, the charge transfer complex of (BTER-I_3) formed. 3 During the iodine doping process, BTER changed from α-form to β-modification. These had been identified by X-ray diffraction, VIS-absorption spectra and SEM picture.4 From the volt-Ampere curve obtained from sandwich cell, when E≤2.2×10~(-1) V·cm~(-1), the room temperature electrical conductivity of BTER and BTER-I_3 were found to be 2.22×10~(-10) s·cm~(-1) and 2.6×10~(-7) S·cm~(-1), respectively.     

Preparation and characterization of polyvinyl alcohol-capped CdSe nanoparticles at room temperature

Polyvinyl alcohol (PVA)-capped CdSe nanoparticles were successfully prepared by a one-step solution growth technique at room temperature and ambient pressure. X-ray diffraction, transmission electron microscopy, infrared spectra, and X-ray photoelectron spectra were used to characterize the final product. The as-prepared CdSe nanocrystals were well dispersed and uniform in shape and the diameter of the particles was confined within 8 nm. Ultraviolet-visible absorption spectra were used to study the confined growth process of PVA-capped CdSe nanoparticles. Photoluminescence measurement showed the near band-edge luminescence of the final product.     

黄芩苷元的Mannich反应

利用天然产物黄芩苷元（baicalein)在A环8－位碳上进行Mannich反应，合成 了11个新的Mannich碱化合物。反应温和，产物易纯化，收率达80％以上。同时考 察了伯胺与甲醛配比为1：2时，产物为二氢苯并E嗪类化合物和黄芩苷元A环上5－ ，6－，7－位羟基对8－位氢进行Mannich反应活性的影响。并对Mannich碱化合物 2b和2j进行盐酸成盐4b和4j，初步考察了它们的溶解度与黄芩苷元的差别。     

Dislocation Analysis for Large-sized Sapphire Single Crystal Grown by SAPMAC Method

In this paper,large-sized sapphire (230×210 mm,27.5 kg) was grown by SAPMAC method (sapphire growth technique with micro-pulling and shoulder-expanding at the cooled center). Dislocation peculiarity in large sapphire boule (0001) basal plane was investigated by chemical etching,scanning electron microscopy and X-ray topography method. The triangular dislocation etch pit measured is 7.6×101～8.0×102 cm-2,in which relative high-density dislocations were generated at both initial and final stages of crystal growth. The analysis of single-crystal X-ray topography shows that there are no apparent sub-grain boundaries; the dislocation lines are isolated and straight. Finally,the origins of low-density dislocation in sapphire crystal are discussed by numerical analysis method.     

Detection of Tumor Necrosis Factor Gene by Piezoelectric Nucleic Acid Sensor

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