颗粒与顺列管束磨损的数值模拟

采用直接数值模拟方法模拟了在管道中直径80μm的颗粒对顺列10×10管束的碰撞和磨损.圆管与流场流体之间的相互作用采用内嵌边界方法进行计算并得到流场结构.颗粒的运动采用了拉格朗日跟踪方法计算并与流场之间进行了双向耦合.计算分析了沿流向以及垂直于流向各排管束受到颗粒的碰撞产生的磨损量.计算结果表明沿流向第三排管束以后的各排管束应采取防磨措旌.     

Langevin study of neutron emission in the reactions ^16O＋^181Ta and ^19F＋^178Hf^＊

The pre-scission neutrons measured in the reactions 16O 181Ta and 19F 178Hf are studied via a Langevin equation coupled with a statistical decay model. We find that because of the mass asymmetry of different entrance channels, the spin distributions of compound nuclei would be different, consequently, the measured neutrons in these two reactions would also different. This means that the entrance channel will affect the particle emission in the fission process of hot nuclei.     

Influence of angular momentum on evaporation residue cross section as a probe of nuclear dissipation

By calculating the excess of the evaporation residue cross sections of the ²⁰⁰Pb     

国内首次超导高频系统束流调试及高功率试验

2004—2007年BEPC高频系统从常温腔改建到超导腔, 逐渐解决了改频的物理问题和超导技术的工程难题, 实现了与国际先进技术接轨, 并按期保质完成了工程、调束任务. 高频系统是BEPCⅡ工程首个吸收国外超导技术、自主完成集成和调试成功的大型装置; 2006年7月国内首次超导高频大功率试验成功; 2006年11月完成系统联调, 按期投入BEPCⅡ首轮调束; 同年12月首次投入同步辐射运行; 2007年2至5月, 东、西两套超导高频系统在1MV以上的加速电压均已实现正/负电子1.89GeV注入积累和110/114mA对撞; 在同步辐射运行中, 逐渐达到2.5GeV/250mA、束流功率100kW, 接近国外同类机器水平; 束流试验证明两套高频系统的     

Density and Symmetric Potential Dependences of Isoscaling Behaviour in the Lattice Gas Model

Isoscaling behaviour of the statistical emission fragments from the equilibrated sources with Z=30 and N=30, 33, 36 and 39 is investigated in the framework of the isospin-dependent lattice gas model. The dependences of isoscaling parameters α on source isospin asymmetry, temperature andfreeze-out density are studied, and the `symmetry energy' is deduced from isoscaling parameters. The results show that symmetry energy C_sym is insensitive to the change of temperature but follows the power-law dependence on the freeze-out density ρ. The effect of strength of asymmetry of nucleon--nucleon interaction potential on the density dependence of the symmetry energy is discussed.     

Sinusoidal Steady State Analysis on 4H--SiC Buried Channel MOSFETs

With the combined use of the drift-diffusion （DD） model, experiment measured parameters and small-signal sinusoidM steady-state analysis, we extract the Y-parameters for 4H-SiC buried-channel metal oxide semicon- ductor field effect transistors （BCMOSFETs）. Output short-circuit current gain G and Mason＇s invariant U are cMculated for extrapolating unity current gain frequency in the common-source configuration fT and the maximum frequency of oscillation fmax, respectively. Here fT = 800 MHz and fmax= 5 GHz are extracted for the 4H-SiC BCMOSFETs, while the field effect mobility reaches its peak value 87cm2/Vs when VGs = 4.5 V. Simulation results clearly show that the characteristic frequency of 4H-SiC BCMOSFETs and field effect mobility are superior, due to the novel structure, compared with conventional MOSFETs.     

Measurement and Analysis of Composition and Depth Profile of H in Amorphous Si1-xCx:H Films

Composition in amorphous Si1-xCx：H heteroepitaxial thin films on Si （100） by plasma enhanced chemical vapour deposition （PECVD） is analysed. The unknown x （0.45-3.57） and the depth profile of hydrogen in the thin films are characterized by Rutherford backscattering spectrum （RBS）, resonance-nuclear reaction analysis （R-NRA） and elastic recoil detection （ERD）, respectively. In addition, the depth profile of hydrogen in the unannealed thin films is compared to that of the annealed thin films with rapid thermal annealing （RTA） or laser spike annealing （LSA） in nitrogen atmosphere. The results indicate that the stoichiometric amorphous SiC can be produced by PECVD when the ratio of CH4/SiH4 is approximately equal to 25. The content of hydrogen decreases suddenly from 35% to 1% after 1150℃ annealing. RTA can reduce hydrogen in SiC films effectively than LSA.     

Hybrid Optoelectronic Bistability in Frequency-Domain and Its Potential Application in FBG Sensors

We propose a novel optical bistable device （OBD） in frequency-domain with which we can perform optical bistable operations in a number of fibre Bragg gratings （FBGs） which are included in the same OBD. Such an OBD may bring more opportunities in applications and, as an example, we show the possibility of using it in an FBG sensor demodulating system. By use of a tunable light source, consisting of a broad band source and a scanning fibre F-P （FFP）, we demonstrate the above-mentioned operations experimentally.     

Effect of Electrical Field on Colloidal CdSe/ZnS Quantum Dots

We fabricate the hybrid films of colloidal CdSe/ZnS quantum dots (QDs) and poly(9-vinylcarbazole) (PVK) sandwiched between two electrodes. The voltage and temperature dependences of the electroluminescence (EL) are measured. The quantum-confined Stark effect of colloidal QDs is clearly observed. To explore the mechanism in the QD EL, hybrid films are fabricated with different concentrations of colloidal QDs. Electrons and holes are proposed to be separately transported in QDs and PVK, respectively.     

Influence of Dopants in ZnO Films on Defects

The influence of dopants in ZnO films on defects is investigated by slow positron annihilation technique. The results show S that parameters meet S_Al>S_un>S_Ag for Al-doped ZnO films, undoped and Ag-doped ZnO films. Zinc vacancies are found in all ZnO films with different dopants. According to S parameter and the same defect type, it can be induced that the zinc vacancy concentration is the highest in the Al-doped ZnO film, and it is the least in the Ag-doped ZnO film. When Al atoms are doped in the ZnO films grown on silicon substrates, Zn vacancies increase as compared to the undoped and Ag-doped ZnO films. The dopant concentration could determine the position of Fermi level in materials, while defect formation energy of zinc vacancy strongly depends on the position of Fermi level, so its concentration varies with dopant element and dopant concentration.