Ablation of GaN Using a Femtosecond Laser

We study the pulsed laser ablation of wurtzite gallium nitride(GaN) films grown on sapphire,using the femtosecond laser beam at a central wavelength of 800nm as the source for the high-speed ablation of GaN films.By measuring the backscattered Raman spectrum of ablated samples,the dependence of the ablation depth on laser fluence with one pulse was obtained.The threwshold laser fluence for the ablation of GaN films was determined to be about 0.25J/cm^2,Laser ablation depth increases with the increasing laser fluence until the amount of removed material is not further increased.The ablated surface was investigated by an optical surface interference profile meter.     

Reversible Decoherence of a Mesoscopic Superposition Driven by a Time—Dependent External Field

By using the normal-ordering technique in the coherent state representation,we discuss the dynamical evolution of the coherence of a Schrodinger cat state in a high Q cavity coupled to another resonator in the presence of external fields.During the progression of the coherence,we pay particular attention to the effect of the external fields,as well as to the initial phase of the Schrodinger cat state.     

羰基镍分析报警仪

羰基镍分析报警仪运用化学发光原理构成，不仅适用于羰基镍生产车间现场的检测和报警，也适于实验室的研究工作。检出限达0.037mg/m^3(0.5ppb），响应时间2min。     

静电火花法表征塑料导爆管起爆感度探索

提出了塑料导爆管轴向静电火花感度的概念、测试原理。用标准的静电感度测试仪配以一定结构的起爆针 ,建立了可用于导爆管感度测试的实验装置 ,采用升降法测出导爆管起爆所需静电能量并用它来表征导爆管的感度。用三种导爆管进行了感度测试 ,实验条件下其感度值E0 .50 分别为 0 .4 3、1.0 8、1.94J。     

同步电机定子绕组不对称状态的分析方法——Ⅱ.参数的计算方法

参数计算是分析电机绕组不对称状态的关键问题。用多回路法分析同步电机定子绕组不对称状态时所用的参数,与绕组正常时的参数不同,它包括定子绕组每个支路、转子各阻尼回路和励磁绕组的自感系数和互感系数。定子支路参数可以由单个线圈参数组成。本文在考虑铁心饱和的情况下,研究了参数计算的两种方法,即气隙磁导分析法和磁场数值分析法,并将它们应用于实际电机的计算,验证和比较了两种计算方法。     

Study on the Baryon State X Produced in the Process J／ψ→p＋X,X→p＋P

The decay process J/ψ→p X X→p P，where p,p and P are the proton,antiproton and pseudoscalar states,respectively,has been studied in terms of the angular distribution and the generalized moment analysis methods.The result shows that we can identify the spin,but cannot determine the parity of the baryon resonance state X produced in the process J/ψ→p X X→p P.     

Performance of the Self—Q—Switched Cr,Yb：YAG Laser

We report on the spectral properties of Cr,Yb:YAG crystal co-doped with 0.025 at.% Cr and 10 at.% Yb are reported.Using a continuous wave Ti:sapphire laser as a pumping source,we have demonstrated the self-Q-switched Cr,Yb:YAG laser at room temperature.We obtained an average output power as much as 75mW at 1.03μm with a pulse width (FWHM)as short as 0.4μs.The laser experiment demonstrated that the Cr,Yb:YAG crystal exactly combines the Cr^4 saturable absorber and Yb^3 gain medium.The Cr,Yb:YAG crystal can be a most promising self-Q-switched laser crystal for compact and efficient solid-state lasers.     

Exciton—Phonon Scattering in CdSe／ZnSe Quantum Dots

A temperature-dependent photoluminescence measurement is performed in CdSe/ZnSe quantum dots with a ZnCdSe quantum well.We deduce the temperature dependence of the exciton linewidth and peak energy of the zero-dimensional exciton in the quantum dots and two-dimensional exciton in the CdSe wetting layer.The experimental data reveal a reduction of homogeneous broadening of the exciton line in the quantum dots in comparison with that in the two-dimensional wetting layer,which indicates the decrease of exciton and optical phonon coupling in the CdSe quantum dots.     

Influences of Thalliation on the Morphology and Critical Temperature of Tl2Ba2CaCu2O8 Thin Films

Tl2Ba2CaCu2Ox(Tl-2212) thin films were prepared by the two-step technique.A precursor film was first prepared by the pulsed laser deposition method,and then experienced the incorporation of thalliation in a one-step or two-step annealing process.The experimental results show that the two-step annealing process produces dense and smooth films,and that the one-step annealing process produces a high critical temperature film of 101K,but the transition width is wide.Precursor films with homogeneous Ba2Ca1.3Cu2.1Ox composition are essential for producing high-quality Tl-2212 films.