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Exciton—Phonon Scattering in CdSe/ZnSe Quantum Dots
引用本文:张立功,申德振,等.Exciton—Phonon Scattering in CdSe/ZnSe Quantum Dots[J].中国物理快报,2002,19(4):578-580.
作者姓名:张立功  申德振
作者单位:[1]LaboratoryofExcitedStateProcess,ChangchunInstituteofOpticsFineMechanicsandPhysics,ChineseAcademyofSciences,Changchun130021 [2]LaboratoryofExcitedStateProcess,ChangchunInstituteofOpticsFineMechanicsandPhy
摘    要:A temperature-dependent photoluminescence measurement is performed in CdSe/ZnSe quantum dots with a ZnCdSe quantum well.We deduce the temperature dependence of the exciton linewidth and peak energy of the zero-dimensional exciton in the quantum dots and two-dimensional exciton in the CdSe wetting layer.The experimental data reveal a reduction of homogeneous broadening of the exciton line in the quantum dots in comparison with that in the two-dimensional wetting layer,which indicates the decrease of exciton and optical phonon coupling in the CdSe quantum dots.

关 键 词:激子-声子散射  CdSe/ZnSe  量子斑点
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