基于单丝行为的平面型丝阵Z箍缩模拟

平面型丝阵负载是近年来Z箍缩实验中研究较多的一种非圆柱型丝阵负载.基于平面型丝阵中单丝的静磁场分析并结合单丝的径向运动方程,计算获得了聚爆过程中负载电流在每根丝上分配、每根丝所受磁场力、丝阵负载区磁场分布、负载总电感及聚爆过程中负载动能变化等规律.模拟计算了平面型丝阵负载Z箍缩聚爆轨迹及聚爆时间,并与"强光一号"加速器上进行的平面型丝阵实验结果进行了对比.结果表明,基于单丝行为的模拟误差约为10%,可较为准确地获得平面型丝阵负载聚爆时间.计算结果有助于深入理解平面型丝阵负载Z箍缩物理过程,同时该模型可用于平面型丝阵负载参数设计.     

一种基于Yager熵最大化属性权重组合方法

研究了区间型多属性决策中属性权重组合问题。首先,提出了一种客观权重确定方法——平均差极大化方法;其次,基于区间型理想点和熵极大化原理,提出属性权重的组合模型。然后,利用属性的组合权重和投影模型,对方案进行排序。最后,通过算例说明了该方法的可行性和有效性。     

Experimental investigation of loss and gain characteristics of an abnormal In_xGa_(1-x)As/GaAs quantum well structure

In this Letter, the loss and gain characteristics of an unconventional InxGa1-xAs∕Ga As asymmetrical step well structure consisting of variable indium contents of InxGa1-xAs materials are measured and analyzed for the first time, to the best of our knowledge. This special well structure is formed based on the indium-rich effect from the material growth process. The loss and gain are obtained by optical pumping and photoluminescence(PL)spectrum measurement at dual facets of an edge-emitting device. Unlike conventional quasi-rectangle wells, the asymmetrical step well may lead to a hybrid strain configuration containing both compressive and tensile strains and, thus, special loss and gain characteristics. The results will be very helpful in the development of multiple wavelength In Ga As-based semiconductor lasers.     

Ag掺杂La-K-Mn-O非均匀多晶体系的电磁性质

用溶胶-凝胶方法制备了1/mAg₂O-La_0.833K_0.167MnO₃ (LKMO/Ag)系列样品，其中1/m代表Ag₂O和La_0.833K_0.167MnO₃(LKMO)的摩尔比，m=32，16，8，4和2. 研究了此系列样品的结构、磁性和输运特性. X射线衍射实验表明，LKMO/Ag是一个非均匀的系统，样品由磁性的钙钛矿相LKMO和金属Ag相组成. 由于Ag相的加入，在室温条件下，磁电阻效应明显增强. 在300 K, 0.5 T磁场下，m=4样品的磁电阻可以达到32%；5.5 T磁场下，其磁电阻可达64%. 而单纯的LKMO样品在相同条件下的磁电阻分别为10%和35%. 在低温下，加Ag样品的磁电阻效应反而减小，样品含Ag越多，磁电阻效应越小. 用非本征磁电阻(包括自旋极化隧穿和自旋相关散射)和本征磁电阻在不同温区对总磁电阻的相对贡献对此系列样品的磁电阻现象作了定性的解释. 关键词： 自旋极化隧穿 自旋相关散射 低场磁电阻 高场磁电阻     

Effects of Ag Doping on Magnetoresistance of La0.833 K0.167MnO3 Polycrystalline Perovskite Manganites

The microstructure,magnetic and transport properties of the heterogeneous system with a nominal composi-tion (1/m)Ag2O-La0.833K0.167MnO3 (1/m is molar ratio with m=32,16,8,4,and 2) have been studied.The x-ray diffraction patterns show that all the samples are two-phase composite and consist of a magnetic La0.833K0.167MnO3 (LKMO) perovskite phase and a nonmagnetic metal Ag phase.The room-temperature magnetoresistance (MR) effect is enhanced significantly due to the addition of Ag.For the m=4 sample,we obtain MR values up to 32％ under a lower field of 0.5 T and 64％ under a higher field of 5.5 T at the temperature of 300K,which are much larger than the corresponding MR values (10％and 35％) of the LKMO sample withoutAg.In the low-temperature range from 4.2K to 250K,the MR values of the Ag-added samples however decrease with the increasing Ag content in the samples.This effect is discussed qualitatively by using the relative contribution from the intrinsic MR effect and the extrinsic MR effect including the spin-polarized-tunnelling and spin-dependent scattering effects in different temperature regions.     

AlK壳层等离子体辐射谱模型的比对

碰撞辐射模型的比对研究对校验发展等离子体辐射谱模型、提高等离子体参数的诊断精度具有重要意义. 基于Al等离子体, 对常用的辐射模型代码FAC和FLYCHK K壳层辐射谱模型开展了比对研究, 详细比较了它们的离子丰度、特征线强度、谱发射率曲线和吸收系数曲线等特征, 并根据各能态的速率方程, 从FAC和FLYCHK模型的结构特点出发, 分析了造成这些差异的原因. FAC 和FLYCHK计算得到的类H、类He离子n=2, n=3激发态数密度有显著差异, 进而引起特征线发射率及其比值(He-IC/He-αup, He-βup/H-βup)的差异, 从而对等离子体参数的诊断结果产生影响. 除了模型中采用的能级结构和碰撞辐射过程速率外, 计算结果显著地受到FAC 和FLYCHK 模型结构的影响. n=2激发态数密度的差异是由FAC和FLYCHK分别采用能级和超组态(组态)的方式构建n=2激发态的速率方程而引起的, 而FAC代码忽略了n=3与更高激发态之间的碰撞耦合过程, 是引起n=3激发态数密度差异的原因. 主要特征线的吸收系数与基态能级的数密度相关, 受到激发态数密度的影响较小, 因此与谱发射率曲线相比, FAC和FLYCHK计算结果的差异更小.     

一种有效解决离轴数字全息相图倾斜畸变的数字参考平面方法

离轴数字全息中使用倾斜的平面参考波以消除成像中的零级衍射和共轭像是一种简捷和常用的方法,然而该方法遇到的一个困扰是,由于倾斜参考波引入了附加的载波频率并很难通过实验测量准确地获得附加的载波频率值或倾角,因此会导致重建的相图出现一定的倾斜畸变而无法完全修正.本文提出了一种数字参考平面算法以解决这一问题.该算法利用重建相图的平坦区域选点构建一个能准确表征相图倾斜的数字参考平面,并建立该平面参量与参考波载波频率的数学关系和作为随后相图畸变修正迭代计算的判据.该算法简单有效,不仅能实现对倾斜相位畸变的准确修正,而且能准确地获得倾斜平面参考波的附加载波频率.由于在相位解包裹重建中结合了抑噪处理,因此该方法在环境和系统噪声的影响下仍然有效,实验结果验证了理论设计的有效性.     

环境和介质对测温结果的影响

建立了一种理论模型和实验方法, 可以有效地修正来自于环境和介质对测温结果的影响。这种修正方法通过计入测温环境对辐射体的衰减系数,可以显著改善以灰体辐射为基础的测温技术的精度和普适性。首先,利用多通道CCD图像光谱仪快速准确地获得给定辐射体在空气中的指纹光谱,并将其等效为一个标准的灰体模型;其次,将该辐射体放入未知的环境和介质中,重复测量该辐射体的辐射光谱,并建立包含待测介质对辐射体的衰减特征的灰体模型。最后,通过对比上述两种情况下的灰体模型,便可精确确定该辐射体在该环境和介质下的温度。通过对处于不同环境和介质下的相同辐射体的系统实验,检验了该测温技术和修正方法的普适性和准确性。     

An efficient approach to characterizing and calculating carrier loss due to heating and barrier height variation invertical-cavity surface-emitting lasers

It is important to determine quantitatively the internal carrier loss arising from heating and barrier height variation in a vertical-cavity surface-emitting quantum well laser (VCSEL). However, it is generally difficult to realize this goal using purely theoretical formulas due to difficulty in deriving the parameters relating to the quantum well structure. In this paper, we describe an efficient approach to characterizing and calculating the carrier loss due to the heating and the barrier height change in the VCSEL. In the method, the thermal carrier loss mechanism is combined with gain measurement and calculation. The carrier loss is re-characterized in a calculable form by constructing the threshold current and gain detuning-related loss current using the measured gain data and then substituting them for the quantum well-related parameters in the formula. The result can be expressed as a product of an exponential weight factor linked to the barrier height change and the difference between the threshold current and gain detuning-related loss current. The gain variation at cavity frequency due to thermal carrier loss and gain detuning processes is measured by using an AlInGaAs--AlGaAs VCSEL structure. This work provides a useful approach to analysing threshold and loss properties of the VCSEL, particularly, gain offset design for high temperature operation of VCSELs.