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PROPERITES OF HYDROGENATED AMORPHOUS SILICON CARBIDE FILMS IRRADIATED BY EXCIMER PULSE LASER 下载免费PDF全文
A series of hydrogenated amorphous silicon carbide film (a-SiC:H) were prepared by rf plasma-enhanced chemical vapor deposition method. The optical band gap(Eoptg) of the films can be extended to 2.6eV. The as-deposited alma were then irradiated by a KrF excimer laser. During the irradiation process, hydrogen escaped out of the films, and the structure of the films was changed from an amorphous phase to mixed phases of nanocrystallites of silicon and amorphous silicon carbide. The room-temperature dark conductivity of the laser irradiated films is 6-7 orders of magnitude larger than that of the as-deposited films, which was attributed to the modification of the conductivity mechanism resulting from the structural change. 相似文献
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分析了硅紫外光伏探测器件的响应度与器件使用模式之间的关系.研究了包括网格结构在内的3种版图设计及所对应的响应度.结果表明,网格结构对改善紫外响应度的实际作用只是减小了串联电阻.细致讨论了光伏器件串联电阻的主要来源,给出了串联电阻对紫外响应度发生显著影响时所对应的估算数值. 相似文献
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