时分复用激光干涉测速技术研究

为了探索和发展瞬态激光干涉测量技术,本文从理论上对激光差频干涉测速度技术进行了分析,并对该技术的应用基础和发展前景进行了剖析.基于对该技术中关键技术的分析、讨论,提出了时分复用激光干涉测速技术的概念.充分利用了激光差频干涉测速技术中的延迟时间τ,在时间段0~τ和τ之后,激光干涉分别体现的是测位移技术和测速度技术,从而可较好地确定冲击与爆轰等物理过程中的第一冲击前沿的速度值(解决条纹丢失的不确定性);同时在硬件要求不太高(降低对记录用示波器等的带宽和采样率的要求)的情况下,保证有较高的速度测量上限.结合爆轰与冲击物理过程特性的考虑,通过选择合适的干涉测试技术参量,设计并建立了光纤时分复用激光干涉测速系统,进行了时分复用激光干涉测速技术的初步应用研究,获得了较好的应用结果,从而验证了该技术的有效性.     

STRESS ANALYSIS IN CUBIC BORON NITRIDE FILMS BY X-RAY DIFFRACTION USING sin2 ψ METHOD

The boron nitride (BN) films containing cubic boron nitride (c-BN) and hexagonal boron nitride (h-BN) were prepared by radio frequency a ssisted thermal filament chemical vapor deposition. The stress and strain in BN films were investigated by X-ray diffraction analysis using the sin² ψ method. The results showed that both c-BN and h-BN in the same film have similar values of elastic strain, however, the compressive stress in c-BN is much greater than that in h-BN for the same film. Both stress and strain gradually decre ased with the increase of substrate temperature (T_s). The effective stress in the films calculated by the effective stress model increased with the increase of T_s. Furthermore, the dependence of effective stress in the films on T_s was also investigated.     

大尺寸单晶金刚石薄膜的外延生长

用电子回旋共振等离子体增强的化学汽相沉积法, 在单晶硅衬底上外延生长出了近于100μm2的单晶金刚石薄膜.使用的原料气体是高纯的氢气和甲烷,生长前没有对衬底做划痕和研磨等预处理.生长中是把衬底放在ECR共振区,并施加了射频负偏压.研究证实,在单晶金刚石薄膜的外延中,硅衬底表面形成高质量结晶的β-SiC过渡层是外延生长金刚石单晶的关键条件;而射频负偏压对于β-SiC过渡层的形成是致关重要的条件.     

结晶β-C3N4薄膜的制备和特性研究

用电子回旋共振等离子体化学汽相沉积(ECR CVD)法, 在单晶硅(100)衬底上沉积生长出了具有{221}结构特性的连续的结晶态β-C3N4薄膜.使用扫描电镜(SEM)观测了沉积薄膜的形态;采用X射线光电子光谱(XPS),X射线衍射(XRD)和拉曼散射表征薄膜的结构.研究表明,沉积结晶态β- C3N4薄膜具有{221}结构特性.