弹性力学的无单元Galerkin方法的误差估计

基于移动最小二乘法在Sobolev空间W^k,p(Ω)中的误差估计以及弹性力学问题的变分弱形式中出现的双线性形式的连续性和强制性,研究了弹性力学问题的无单元Galerkin方法的误差分析以及数值解的误差和影响域半径之间的关系,给出了弹性力学问题的无单元Galerkin方法在Sobolev空间中的误差估计定理,并证明了当节点和形函数满足一定条件时该误差估计是最优阶的.从误差分析中可以看出,数值解的误差与权函数的影响域半径密切相关.最后,通过算例验证了结论的正确性. 关键词： 无网格方法 无单元Galerkin方法 弹性力学 误差估计     

肝素杂化材料的制备及抗凝血性质的初步研究

以甲苯二异氰酸酯(TDI)中的-NCO基与纳米金属氧化物表面的羟基发生反应,得到改性纳米金属氧化物,并使其与肝素钠(Heparin)进行接枝反应生成肝素杂化材料,结合红外、热重、扫描电镜(SEM)等表征方法,确定纳米金属氧化物确实接枝到了肝素钠的表面。通过对体外凝血时间和复钙时间的测定,来初步研究肝素杂化材料的抗凝血性质。结果表明：肝素杂化材料的抗凝血时间和复钙时间均比肝素钠的要短,表明它的抗凝血性比肝素钠的抗凝血性要弱一些;但比纳米金属氧化物和空白组的抗凝血时间和复钙时间要长,说明肝素杂化材料的抗凝血性与其相比则有明显的提高。     

An improved interpolating element-free Galerkin method for elasticity

Based on the improved interpolating moving least-squares （ⅡMLS） method and the Galerkin weak form, an improved interpolating element-free Galerkin （ⅡEFG） method is presented for two-dimensional elasticity problems in this paper. Compared with the interpolating moving least-squares （IMLS） method presented by Lancaster, the ⅡMLS method uses the nonsingular weight function. The number of unknown coefficients in the trial function of the ⅡMLS method is less than that of the MLS approximation and the shape function of the ⅡMLS method satisfies the property of Kronecker δ function. Thus in the ⅡEFG method, the essential boundary conditions can be applied directly and easily, then the numerical solutions can be obtained with higher precision than those obtained by the interpolating element-free Galerkin （IEFG） method. For the purposes of demonstration, four numerical examples are solved using the ⅡEFG method.     

The effects of relativistic broadening and frequency down-shift on electronben cyclotron emission measurements in EAST

This paper presents a theoretical calculation of the effects of relativistic broadening and frequency down-shift on the electron cyclotron emission measurements for a wide range of plasma parameters in the Experimental Advanced Superconducting Tokamak (EAST). The calculation is based on the radiation transfer equation, with the reabsorption and reemission processes taken into account. The broadening effect contributes to the radial resolution of the measurement, and the calculation results indicate that it is ～2 cm in the case of the central electron temperature 10 keV. A pseudo radial displacement of the obtained electron temperature profile occurs if the relativistic frequency down-shift effect is not taken into account in the determination of the emission layer position. The shift could be a few centimeters as the electron temperature increases, and this effect should be taken into account.     

Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination

The vertical GaN-on-GaN Schottky barrier diode with boron-implanted termination was fabricated and characterized.Compared with the Schottky barrier diode(SBD)without boron-implanted termination,this SBD effectively improved the breakdown voltage from 189 V to 585 V and significantly reduced the reverse leakage current by 10^5 times.In addition,a high Ion/Ioff ratio of ~10^8 was achieved by the boron-implanted technology.We used Technology Computer Aided Design(TCAD)to analyze reasons for the improved performance of the SBD with boron-implanted termination.The improved performance of diodes may be attributed to that B+could confine free carriers to suppress electron field crowding at the edge of the diode,which could improve the breakdown voltage and suppress the reverse leakage current.     

Electronic Structure and Optical Properties of Zinc-Blende InxGa1-xNyAs1-y by a First-Principles Study

Electronic structure and optical properties of the zinc-blende In_xGa_{1 - x}N_yAs_1-y system are calculated from the first-principles. Some relative simulations are performed using CA-PZ form of local density approximation in the framework of density functional theory. The supercell of intrinsic GaAs is calculated and optimized by using different methods, and the LDA-CA-PZ gives the most stable structure. The band gap of In_xGa_{1 - x}As tends to decrease with the increasing In concentration. For the case of In_0.0625Ga_0.9375N_yAs_{1 -y}, the band gap will show slight difference when N concentration is larger than 18.75%. The optical transition of In dopant in GaAs exhibits a red shift, while it is a blue shift for the N dopant in InGaAs. Besides, dielectric function, reflectivity, refractive index and loss function in different doping model of In_xGa_{1 - x}N_yAs_{1 - y} are also discussed.     

The improved element-free Galerkin method for three-dimensional wave equation

The paper presents the improved element-freeGalerkin(IEFG) method for three-dimensional wave propagation.The improved moving least-squares(IMLS) approximation is employed to construct the shape function,whichuses an orthogonal function system with a weight function asthe basis function.Compared with the conventional movingleast-squares(MLS) approximation,the algebraic equationsystem in the IMLS approximation is not ill-conditioned,andcan be solved directly without deriving the inverse matrix.Because there are fewer coefficients in the IMLS than in theMLS approximation,fewer nodes are selected in the IEFGmethod than in the element-free Galerkin method.Thus,theIEFG method has a higher computing speed.In the IEFGmethod,the Galerkin weak form is employed to obtain a discretized system equation,and the penalty method is appliedto impose the essential boundary condition.The traditionaldifference method for two-point boundary value problems isselected for the time discretization.As the wave equationsand the boundary-initial conditions depend on time,the scaling parameter,number of nodes and the time step length areconsidered for the convergence study.     

Complex variable element-free Galerkin method for viscoelasticity problems

Based on the complex variable moving least-square (CVMLS) approximation, the complex variable element-free Galerkin (CVEFG) method for two-dimensional viscoelasticity problems under the creep condition is presented in this paper. The Galerkin weak form is employed to obtain the equation system, and the penalty method is used to apply the essential boundary conditions, then the corresponding formulae of the CVEFG method for two-dimensional viscoelasticity problems under the creep condition are obtained. Compared with the element-free Galerkin (EFG) method, with the same node distribution, the CVEFG method has higher precision, and to obtain the similar precision, the CVEFG method has greater computational efficiency. Some numerical examples are given to demonstrate the validity and the efficiency of the method.     

Optimizing the top profile of a nanowire for maximum forward emission

The optimal top structure of a nanowire quantum emitter single photon source is significant in improving performance. Based on the axial symmetry of a cylindrical nanowire, this paper optimizes the top profile of a nanowire for the maximum forward emission by combining the geometry projection method and the finite element method. The results indicate that the nanowire with a cambered top has the stronger emission in the forward direction, which is helpful to improve the photon collection efficiency.