Dynamic complexities in predator–prey ecosystem models with age-structure for predator

Natural populations, whose generations are non-overlapping, can be modelled by difference equations that describe how the populations evolve in discrete time-steps. In the 1970s ecological research detected chaos and other forms of complex dynamics in simple population dynamics models, initiating a new research tradition in ecology. However, in former studies most of the investigations of complex population dynamics were mainly concentrated on single populations instead of higher dimensional ecological systems. This paper reports a recent study on the complicated dynamics occurring in a class of discrete-time models of predator–prey interaction based on age-structure of predator. The complexities include (a) non-unique dynamics, meaning that several attractors coexist; (b) antimonotonicity; (c) basins of attraction (defined as the set of the initial conditions leading to a certain type of an attractor) with fractal properties, consisting of pattern of self-similarity and fractal basin boundaries; (d) intermittency; (e) supertransients; and (f) chaotic attractors.     

瓣形均匀带电面在其直径处的电势分布

从点电荷的电势计算公式出发推导出了瓣形均匀带电面在其直径处的电势分布.进一步讨论了均匀带电半球面在其底面以及均匀带电球面内部和外部的电势分布.     

Oxidation process of SiGe on SOI substrates

The oxidation of SiGe film epitaxial grown on top of SOI wafers has been studied. These SiGe/SOI samples were oxidized at 700, 900, 1100 °C. Germanium atoms were rejected from SiGe film to SOI layer. A new Si_1−xGe_x (x is minimal) layer formed at SiGe/Si interface. As the germanium atoms diffused, the new Si_1−xGe_x (x is minimal) layer moved to Si/SiO₂ interface. Propagation of threading dislocation in SiGe film to SOI substrate was hindered by the new SiGe/Si interface. Strain in SOI substrate transferred from SiGe film was released through dislocation nucleation and propagation inner. The relaxation of SiGe film could be described as: strain relaxed through strain equalization and transfer process between SiGe film and SOI substrates. Raman spectroscopy was used to characterize the strain of SiGe film. Microstructure of SiGe/SOI was observed by transmission electron microscope (TEM).     

Structural evolution in amorphous silicon and germanium thin films.

The structural evolution in amorphous silicon and germanium thin films has been investigated by high-resolution transmission electron microscopy (HRTEM) in conjunction with autocorrelation function (ACF) analysis. The results established that the structure of as-deposited semiconductor films is of a high density of nanocrystallites embedded in the amorphous matrix. In addition, from ACF analysis, the structure of a-Ge is more ordered than that of a-Si. The density of embedded nanocrystallites in amorphous films was found to diminish with annealing temperature first, then to increase. The conclusions also corroborate well with the results of diminished medium-range order in annealed amorphous films determined previously by a variable coherence microscopy method.     

可变抽样区间的非参数控制图

最近几年一些学者研究了可变抽样区间的质量控制图。Amin等提出了可变抽样区间(VSI)的非参数控制图———符号 (Sign)统计量图〔1〕。本文在此基础上研究位置VSI符号控制图的制定方法 ,并设计离散VSI符号控制图。符号控制图的优点是对非正态总体亦可应用 ,并且不需要过程方差的信息。本文将所设计的VSI符号控制图同固定抽样区间 (FSI)的常规图作比较 ,并举实例说明符号控制图的应用     

On the existence and uniqueness of classical global solution to a type of Boussinesq equations

The existence and uniqueness of classical global solutions to a type of Boussinesq equations with initial and boundary values are studied in this paper. The existence of such solutions is proved by means of compactness theorem and Schauders fixed point theorem, and its uniqueness by the so called energy method.Projects Supported by the Science Fund of the Chinese Academy of Sciences.     

脉冲电场屏蔽效能测试系统及测试方法

 自主研制了一套小型脉冲电场屏蔽效能测试系统，该系统由脉冲电场发射设备和脉冲电场测试设备构成。脉冲电场发射设备的天线口面前60 cm处可产生峰值达7.5 kV/m的脉冲电场，测试设备的动态测试范围达97 dB。系统采用光纤测量设备，在测量工作中能有效抑制强电磁场干扰。采用Matlab编写自动测量及数据处理程序，实现了数据采集与处理自动化。实验测量了金属桥架、控制柜、屏蔽帐篷、导电水泥混凝土房的脉冲电场屏蔽效能，其脉冲电场峰值衰减量分别为52,64,66,30 dB。实验表明可用脉冲电场的峰值衰减量来评估屏蔽体的脉冲电场屏蔽效能。     

Er3+掺杂的Bi2O3-B2O3-SiO2玻璃的光谱性质

测试了Bi₂O₃-B₂O₃-SiO₂玻璃中的Er³⁺离子的吸收光谱、发射光谱、⁴I_13/2的荧光寿命、拉曼光谱,及OH^-的傅里叶红外吸收光谱。应用Judd-Ofelt理论计算了该玻璃中的Er³⁺离子的J-O参数、振子强度、⁴I_13/2能级的寿命,从而利用测得的⁴I_13/2的荧光寿命得出了⁴I_13/2能级的量子效率(15%)。由于较低量子效率可能与OH^-有关,所以计算了玻璃中的OH^-浓度,发现其浓度较高(1.66×10¹⁹cm^-1,相当于Er³⁺浓度的3倍)。应用McCumber理论和四能级模型计算了Er³⁺离子的受激发射截面和荧光发射光谱的半峰全宽,结果与通过吸收光谱计算所得基本吻合。根据透射率和折射率的关系计算了折射率,发现和测量值相差很大,说明有较大的散射,通过拉曼光谱和显微镜测试,认为是玻璃中的微小气泡造成的。     

激光诱导荧光探测水体中溶解有机物浓度

用Nd∶YAG激光器的三倍频355 nm光作为激发光源,根据激光诱导荧光(LIF)方法激发并探测污染水体的荧光光谱.通过对荧光光谱的分析处理研究归一化荧光强度,即450 nm处水中溶解有机物(DOM)峰与405 nm处水的拉曼峰的比值,反演溶解有机物浓度.用商品腐殖酸和去离子水配置成已知浓度的溶液代替标准DOM溶液进行标定,得到回归方程.结果证明,DOM的归一化荧光强度与水体中DOM浓度有较好的线性关系,因此LIF方法是对大面积水域水质进行动态遥测的较理想方法.     

考虑到束-波相互作用的速调管离子噪声二维模拟

采用粒子模拟的方法并考虑电子束与电磁波的相互作用，首次直接得到了速调管输出信号的离子噪声图像，阐述了束电子、二次电子、离子、电磁场之间的相互作用的动力学过程. 指出离子噪声所表现出来的相位波动是由电子束速度的波动引起的，电子束速度的变化来源于管内离子数量的变化，离子的数量的变化又与电子束状态变化相互影响，这是离子噪声产生的根本原因. 二次电子对离子噪声产生过程的影响甚微，但是其行为却反映了离子噪声的形成机理. 离子噪声引发的输出信号幅度波动取决于电子束速度和半径的改变，与离子行为密切相关. 关键词： 离子噪声 速调管 粒子模拟 电子束