波荡器谐波场增强效应对电子自发辐射谱的影响

 有效利用电子束在波荡器中运动时产生的谐波辐射,是获得更短波长辐射最直接的方法之一。提高波荡器磁场的谐波分量可以提高电子束的谐波辐射光场强度。分析了一种改进Halbach型波荡器结构,计算了其磁场的构成,分析表明这种结构可以使磁场的三次谐波分量提高至基波分量的25%左右。以合肥光源的电子束参数为例,计算了波荡器磁场谐波分量增强后对电子束自发辐射谱的影响。计算结果表明,波荡器磁场谐波分量增强至25%时,可以使电子束自发辐射的三次谐波辐射增强至基波辐射光子通量的67%左右。     

基于LabVIEW的激光发散角测试软件开发

根据可变光阑法测量发散角的原理,利用具有强大数值计算与串口通信能力的LabVIEW语言搭建发散角测试软件平台.平台测试结果表明,测试软件具有较好的显示功能与可操作性,同时具有参数设置灵活、可二次开发等优点.在总程序设计的基础上,分别介绍了数据采集、数据处理及数据存储的三个程序模块,最后提出用LabVIEW的循环、嵌套等...     

基于光纤Bragg光栅的行车模型主梁挠度的测量

简易桥式起重机的力学结构是一种简支梁,研制了一种行车模型,主要包括工字梁及一个可吊挂重物的滑块.光纤Bragg光栅沿工字梁的轴向均匀粘贴于行车主梁的下表面,侧点分别位于离主梁的1/4、1/2和3/4等三个位置.在测量中,通过吊挂重物对主梁产生挠度,从而导致粘贴其下表面的光纤Bragg光栅产生波长移位.载荷试验表明,在主...     

高分辨率405 nm激光显微成像系统研究

 研究了405 nm短波长激光作为照明光源、数值孔径0.65显微物镜组成的显微成像系统。采用该系统对CD-R及DVD-R盘片进行了显微成像,并对激光成像散斑进行了消除,同时利用CCD图像传感技术和图像采集技术对显微图像进行实时观察与存储,与卤素灯白光作为照明光源时的显微图像进行了比较。结果表明：该系统在卤素灯白光作为照明光源时对CD-R盘片信息点可清晰分辨,但对DVD-R盘片信息点的图像不可分辨;而在405 nm激光照明时信息点均可清晰分辨,系统分辨优于400 nm,明显高于普通卤素灯白光照明系统。     

Ca8Mg(SiO4)4Cl2:Eu2+,Nd3+的近红外发光

用高温固相法制备了Ca<,8>Mg(SiO<,4>)<,4>Cl<,2>:Eu<'2+>,Nd<'3+>近红外发光材料,通过X射线衍射仪,近红外,可见发射光谱和激发光谱,荧光寿命等对样品进行了测试.研究了Eu<'2+>、Nd<'3+>的掺杂浓度对近红外发光性能的影响及相对强度变化的规律,结果表明,Ca<,8>Mg(Si...     

Structural and spectroscopic properties of small Pun （n= 2-5） molecules

The equilibrium structures and the electronic, spectroscopic and thermodynamic properties of small Pu_n (n=2-5) molecules are systematically investigated using the methods of general gradient approximation (GGA) of density functional theory (DFT). The results show that the bond length of the lowest-energy structure of Pu₂ is 2.578 AA. The ground state structure of Pu₃ is a triangle with D_3h symmetry, whereas for Pu₄, the ground state structure is a square (D_4h) and the spin polarization of 16 for molecule Pu₅ with square geometry (D_4h) is the most stable structure. For the ground state structures, the vibrational spectra as well as thermodynamic parameters are worked out. In addition, the values for the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) along with the energy gap of all the Pu_2-5 structures are presented. The relevant structural and chemical stabilities are predicted.     

Superconductivities and structural properties of ternary Tiben Zrben Ta alloys

Superconductivities and structural properties of Ti-Zr-Ta ternary alloys are extensively investigated. The TiZrTa sample has a cubic structure (β -phase) and shows a sharp superconducting transition at a critical temperature (T_c) of about 7.3 K. In addition, two series of Ti-Zr-Ta alloys, with nominal compositions of Ti_65-xZr₃₅Ta_x and Ti_xZr_65-xTa₃₅ respectively, are prepared, and their superconductivities and crystal structures change regularly with the chemical composition. Our experimental study also indicates that the annealing processing of this kind of material can cause the transition temperature to increase and the highest T_c is observed to be about 8.3 K in annealed samples.     

Growth of gem-grade nitrogen-doped diamond crystals heavily doped with the addition of Ba（N3）2

Additive Ba(N 3) 2 as a source of nitrogen is heavily doped into the graphite-Fe-based alloy system to grow nitrogendoped diamond crystals under a relatively high pressure (about 6.0 GPa) by employing the temperature gradient method.Gem-grade diamond crystal with a size of around 5 mm and a nitrogen concentration of about 1173 ppm is successfully synthesised for the first time under high pressure and high temperature in a China-type cubic anvil highpressure apparatus.The growth habit of diamond crystal under the environment with high degree of nitrogen doping is investigated.It is found that the morphologies of heavily nitrogen-doped diamond crystals are all of octahedral shape dominated by {111} facets.The effects of temperature and duration on nitrogen concentration and form are explored by infrared absorption spectra.The results indicate that nitrogen impurity is present in diamond predominantly in the dispersed form accompanied by aggregated form,and the aggregated nitrogen concentration in diamond increases with temperature and duration.In addition,it is indicated that nitrogen donors are more easily incorporated into growing crystals at higher temperature.Strains in nitrogen-doped diamond crystal are characterized by micro-Raman spectroscopy.Measurement results demonstrate that the undoped diamond crystals exhibit the compressive stress,whereas diamond crystals heavily doped with the addition of Ba(N 3) 2 display the tensile stress.     

A1/Ti/4H-SiC Schottky barrier diodes with inhomogeneous barrier heights

This paper investigates the current-voltage （I-V） characteristics of Al/Ti/4H-SiC Schottky barrier diodes （SBDs） in the temperature range of 77 K-500 K, which shows that Al/Ti/4H SiC SBDs have good rectifying behaviour. An abnormal behaviour, in which the zero bias barrier height decreases while the ideality factor increases with decreasing temperature （T）, has been successfully interpreted by using thermionic emission theory with Gaussian distribution of the barrier heights due to the inhomogeneous barrier height at the A1/Ti/4H-SiC interface. The effective Richardson constant A＊ = 154 A/cm2 . K2 is determined by means of a modified Richardson plot In（I0/T2） - （qσ）2/2（κT）2 versus q/kT, which is very close to the theoretical value 146 A/cm2 · K2.     

A note on the area spectrum of d-dimensional pure de Sitter Space-time

Consistent supercurrent multiplets are naturally associated with linearized off-shell supergravity models. In S.M. Kuzenko, J. High Energy Phys. 1004, 022 (2010) we presented the hierarchy of such supercurrents which correspond to all the models for linearized 4D $\mathcal{N}=1$ supergravity classified a few years ago. Here we analyze the correspondence between the most general supercurrent given in S.M. Kuzenko, J. High Energy Phys. 1004, 022 (2010) and the one obtained eight years ago in M. Magro et al., Ann. Phys. 298, 123 (2002) using the superfield Noether procedure. We apply the Noether procedure to the general $\mathcal{N}=1$ supersymmetric nonlinear sigma-model and show that it naturally leads to the so-called $\mathcal{S}$ -multiplet, revitalized in Z. Komargodski, N. Seiberg, J. High Energy Phys. 1007, 017 (2010).