倾斜下降管气液两相分层流截面含气率的计算与液层高度的预测

分层流是气液两相流中常见的流动型式，分层流中液层高度是计算的基本数据，由于界面波的存在，对液层的测量和预测都很困难．Ｖｌａｃｈｏｓ提出了预测气液两相分层流液层厚度的关系式，但这一关系式并不适用于倾斜下降管气液两相流．本文提出了计算倾斜下降管气液两相分层流截面含气率的理论模型，在这种模型下得到的截面含气率和实验结果符合良好．在大量实验的基础上，考虑了倾角、管径、气液各相折算速度的影响，根据实验数据提出了预测液层厚度的关系式。     

p+209Bi核反应微观数据的理论计算

利用光学模型、激光模型、蒸发模型及扭曲波玻恩近似理论,对入射能量从阈能到300MeV,p+²⁰⁹Bi的中子反应截面、剩余核截面、出射粒子的多重数进行了理论计算及分析,并将计算结果与实验数据进行了比较.同时得到一组能量到50?0MeV与实验数据符合很好的光学势参数.     

Characteristics of transmission of electrons in a quantum wire tangentially attached to a superconductor ring threaded by magnetic flux

We present numerical investigations of the transmission properties of electrons in a normal quantum wire tangentially attached to a superconductor ring threaded by magnetic flux. A point scatterer with a δ -function potential is placed at node to model scattering effect. We find that the transmission characteristics of electrons in this structure strongly depend on the normal or superconducting state of the ring. The transmission probability as a function of the energy of incident electrons, in the case of a superconductor ring threaded by one quantum magnetic flux, emerges one deep dip, imposed upon the first broad bump in spectrum. This intrinsic conductance dip originates from the superconductor state of the ring. When increasing the magnetic flux from one quantum magnetic flux to two, the spectrum shifts toward higher energy region in the whole. This conductance dip accordingly shifts and appears in the second bump. In the presence of a point-scatterer at the node, the spectrum is substantially modified. Based on the condition of the formation of the standing wave functions in the ring and the broken of the time-reserve symmetry of Schr?dinger equation after switching magnetic flux, the characteristics of transmission of electrons in this structure can be well understood. Received 6 November 2001     

上海基础房价相关指标及走势的分析与研究

基础房价的相关指标及其走势一直是大众关心的热门话题．本文通过对上海基础房价相关指标的分析，建立了市场房价走势的两个数学模型．模型一：在相关性分析的基础上利用主成分分析消除指标间的共线性，再用回归拟合房价模型并进行预测；模型二：在相关性分析的基础上利用核估计方法预测出房价．继呵对2005年下半年的房价走势进行了预测，得出的结果与实际情况相吻合．     

广义变系数模型的Bayesian B样条估计

提出了广义变系数模型函数系数的一种新的估计方法．我们用B样条函数逼近函数系数,不具体选择节点的个数,而是节点个数取均匀的无信息先验,样条函数系数取正态先验,用Bayesian模型平均的方法估计各个函数系数．这种估计方法一个主要特点是允许各个函数系数所需节点个数的后验分布不同,因此允许不同函数系数使用不同的光滑参数．另外,本文还给出了Bayesian B样条估计的计算方法,并通过模拟例子,说明广义变系数模型的函数系数可以由Bayesian B样条估计方法得到很好的估计．     

用三个关系式与Mathematica软件求第二类自然数幂和公式

首先介绍三个第二类自然数幂和关系式并对其中的两式给出证明,接着利用这些关系式与数学软件M athem atica4.0,给出求解第二类自然数幂和公式的若干机械计算方法.     

新型金属杂冠醚配合物18-MC-6[Mn6(4-Amashz)6(DMF)6]·12DMF的合成

合成了一种新型金属杂冠醚配合物[Mn6(4-amashz)6(DMF)6]·12DMF,并用X射线衍射法对其结构进行了表征.研究了该化合物修饰金电极催化氧还原的性质,结果表明,该化合物具有平面碟状结构,对在碱性溶液中的氧有显著的催化还原作用.     

Einstein relation in chemically doped organic semiconductors

Based on the assumption of Gaussian energy distributions of the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital (HOMO), analytical expressions of generalized Einstein relation in chemically doped organic semiconductor are developed, by approximation of Coulomb traps with a rectangle potential well. Numerical calculations show that traditional Einstein relations do not hold for chemically doped organic semiconductors. Similar to physical doping, the dependence of diffusion coefficient to mobility D/μ ratio on the carrier concentration has a maximum. An essential difference between chemical doping and physical doping is that, the D/μ ratio in chemically doped organic semiconductors depends not only on carrier concentration and doping concentration, but also on the applied electric field. PACS 71.20.Rv; 72.90.+y; 73.50.-h     

Relativistic Electromagnetic Solitary Wave in a Cylindrical Magnetized Plasma

In the presence of an applied static and uniform magnetic field, a cylindrical Kadomtsev-Petviashivili equation is derived for a relativistic electromagnetic solitary wave propagating in collisionless plasma consisting electrons, positrons, and ions in the case of weak relativistic limit. This equation is solved in a stationary frame to obtain explicit expression for the velocity, amplitude and width of solitons. The amplitude of the solitary wave has a maximum value at a critical αc of the ratio of the ion equilibrium density to the electron one, and it increases as the applied magnetic field becomes larger.     

Effect of Nonradiative Recombination on Carrier Dynamics in GaInNAs/GaAs Quantum Wells

The nonradiative recombination effect on carrier dynamics in GalnNAs/GaAs quantum wells is studied by timeresolved photoluminescence （TRPL） and polarization-dependent TRPL at various excitation intensities. It is found that both recombination dynamics and spin relaxation dynamics strongly depend on the excitation intensity. Under moderate excitation intensities the PL decay curves exhibit unusual non-exponential behaviour. This result is well simulated by a rate equation involving both the radiative and non-radiative recombinations via the introduction of a new parameter of the effective concentration of nonradiative recombination centres in the rate equation. In the spin dynamics study, the spin relaxation also shows strong excitation power dependence. Under the high excitation power an increase of spin polarization degree with time is observed. This new finding provides a useful hint that the spin process can be controlled by excitation power in GaInNAs systems.