基于电源电流和输出电压的模拟电路故障模型研究

基于模拟电路电源电流和输出电压的协同分析,研究了复数域的故障建模方法,提出了一种2D故障模型的数学表达式,该模型为复平面上的一簇圆轨迹。为了扩大故障轨迹之间的距离,在相同测量精度和元件容差条件下提高故障检测率和隔离率,进一步提出了3D复数空间的优化故障模型。两种故障模型都极大简化了测点选择算法和模拟故障状态仿真的复杂度,理论上对模拟电路单故障的覆盖率为100%。基于滤波器电路的实验仿真结果验证了两种故障模型的有效性。     

基于虚拟仪器的换热器智能控制系统设计

换热器广泛应用于建筑工程领域及工业过程中,其出口介质温度的有效控制是保证质量、节能和安全生产的重要条件,因此换热器出口水温的控制是过程控制中的重要课题。本文以西门子SMPT1000换热器温度控制系统为研究对象,建立基于虚拟仪器的智能温度控制平台。该平台在实现传统PID控制的基础上,又增加了智能控制算法,斯密斯控制和模糊控制。实验证明该智能控制平台具有修改参数简易方便、曲线准确的优点,具有良好的动静态特性,且市场应用价值高。     

高超声速平板边界层流动显示的试验研究

本文在高超声速脉冲式风洞内对基于纳米示踪的平面激光散射技术(nano-based planar laser scattering, NPLS)的应用进行了探索, 并在此基础上对平板边界层流动结构的精细测量进行了研究. 试验来流Ma=7.3, 总压4.8 MPa, 总温680 K. 通过时序的分析和调试, 对各分系统实现了高精度的同步控制; 定量的粒子注入及混合, 实现了粒子的均匀撒播, 对主流获得了均匀的显示效果; 对于边界层流动, 获得了精细的瞬态流动结构图像, 显示了层流到湍流的转捩过程, 并分析了其时空演化特性.     

表面活性剂辅助二氧化硅纳米颗粒在非水基液中的分散研究（英文）

研究了粒径10~100nm的二氧化硅纳米颗粒在非水基液中的表面活性剂辅助分散。结合颗粒表面特定官能团结构,针对性选择了合适的表面活性剂,氢键桥梁作用和长链分子空间位阻作用抑制了颗粒团聚行为。当表面活性剂体积分数6%的时候,动态光散射测试结果表明颗粒中位尺度30.2nm,与透射电镜测试结果吻合,展现了良好的分散性。     

O(1D)和CD4反应的准经典轨线

在新的全域势能面上, 用准经典轨线方法细致地研究了O(¹D)+CD₄多通道化学反应的动力学．这个势能面是用交换不变多项式方法基于MRC+Q/aug-cc-pVTZ从头算点拟合得到的．通过计算得到了产物OD+CD₃、D+CD₂OD/CD₃O和D₂+DCOD/D₂CO的分支比、平动能分布以及角度分布,结果显示理论与实验吻合得较好, 从而说明了这个反应的同位素取代效应很小． 研究表明,O(¹D)+CD₄反应是经过陷入的抽取机理发生的： 最初主要通过D原子的抽取,并不是之前人们认为的直接C-D键的插入形成CD3OD中间物后再进而解离成各个产物通道．     

Tm3+/Yb3 :LiYF4单晶的高效近红外量子剪裁及其在光伏电池中的应用

采用改进的坩埚下降法成功地生长了Tm/Yb共掺氟化钇锂单晶. 该单晶体具有每吸收一个蓝色光子并能发射出2个1000 nm近红外光子的下转换发光效应. 测定了样品的激发光谱、发射光谱和荧光衰减曲线. 在465 nm蓝光激发下观察到由Yb³⁺：²F_5/2→²F_7/2能级跃迁所致的960～1050 nm 波段的发射带,此发光带源于Tm³ 对Yb³ 离子的能量下转换过程. 应用Inokuti-Hirayama模型,研究了晶体的能量转换过程,结果表明Tm³ 向Yb³ 的能量传递是一个电偶极子相互作用机制过程. 当Tm³ 与Yb³ 离子的掺杂浓度为0.49mol%与5.99mol%时,单晶的量子剪裁效率达到最大值167.5%.     

Characterization of Cr‐doped Sb2Te3 films and their application to phase‐change memory

Phase‐change memory (PCM) is regarded as one of the most promising candidates for the next‐generation nonvolatile memory. Its storage medium, phase‐change material, has attracted continuous exploration. Along the traditional GeTe–Sb₂Te₃ tie line, the binary compound Sb₂Te₃ is a high‐speed phase‐change material matrix. However, the low crystallization temperature prevents its practical application in PCM. Here, Cr is doped into Sb₂Te₃, called Cr–Sb₂Te₃ (CST), to improve the thermal stability. We find that, with increase of the Cr concentration, grains are obviously refined. However, all the CST films exhibit a single hexagonal phase as Sb₂Te₃ without phase separation. Also, the Cr helps to inhibit oxidation of Sb atoms. For the selected film CST_10.5, the resistance ratio between amorphous and crystalline states is more than two orders of magnitude; the temperature for 10‐year data retention is 120.8 °C, which indicates better thermal stability than GST and pure Sb₂Te₃. PCM cells based on CST_10.5 present small threshold current/voltage (4 μA/0.67 V). In addition, the cell can be operated by a low SET/RESET voltage pulse (1.1 V/2.4 V) with 50 ns width. Thus, Cr–Sb₂Te₃ with suitable composition is a promising novel phase‐change material used for PCM with high speed and good thermal stability performances. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Improvement of resistive switching fluctuations by using one step lift‐off process

Bipolar resistive switching characteristics are investigated in ZrO₂ containing Cu thin layer devices, particularly for the self‐isolated‐structure device fabricated by one step lift‐off process. Compared with the traditional‐structure device, the self‐isolated‐structure device shows more uniform resistive switching characteristics. This is because the isolation of each device cell has negligible influence on each other and thus mitigates possible crosstalk between each cell. These results suggest that the feasibility of good stabilization of the resistive switching parameters can be obtained through one step lift‐off process. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Spin gapless semiconductor like Ti2MnAl film as a new candidate for spintronics application

A novel Heusler ferrimagnet Ti₂MnAl film has been grown on Si(001) substrate using magnetron sputtering. Characteristics of its magnetic and transport properties reveal the spin‐gapless‐semiconductor (SGS) nature of the stoichiometric Ti₂MnAl, in agreement with theoretical prediction. The as‐grown SGS‐like Ti₂MnAl film demonstrated high Curie temperature, nearly compensated ferrimagnetic properties with small coercivity and low magnetization. It also showed semiconductor‐like behavior at room temperature allowing good compatibility with commercial Si‐based semiconductor. In this regards, Ti₂MnAl film is a potential candidate material for spintronics application, especially for the minimization of energy consumption of device. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Thermal stability of amorphous SiOC/crystalline Fe composite

We examined the thermal stability of amorphous silicon oxycarbide (SiOC) and crystalline Fe composite by in situ and ex situ annealing. The Fe/SiOC multilayer thin films were grown via magnetron sputtering with controlled length scales on a surface-oxidized Si (100) substrate. These Fe/SiOC multilayers were in situ or ex situ annealed at temperature of 600 °C or lower. The thin multilayer sample (~10 nm) was observed to have a layer breakdown after 600 °C annealing. Diffusion starts from low groove angle triple junctions in Fe layers. In contrast, the thick multilayer structure (~70 nm) was found to be stable and an intermixed layer (Fe_xSi_yO_z) was observed after 600 °C annealing. The thickness of the intermixed layer does not vary as annealing time goes up. The results suggest that the Fe_xSi_yO_z layer can impede further Fe, Si and O diffusion, and assists in maintaining morphological stability.