Problems of Constructing the Nuclotron Virtual Model

Problems connected with the Nuclotron virtual simulation model within MADX are considered. The main objective of the study is a more precise specification of the exiting accelerator model, so that the numerical results obtained using MADX are as close as possible to the experimental data obtained in the last Nuclotron runs. The groups of parameters that bring theoretical calculations closer to the experimental data are found via analyzing the impact of the model characteristics on the numerical results.     

Electrocatalytic fluoroalkylation of olefins

Under electrocatalysis conditions, the perfluoroalkylation of α-methylstyrene by the nickel complex NiBr₂bipy proceeds with the formation of dimeric products of addition of perfluoroalkyl radicals to the double bond.     

Chemical and phase compositions of silicon oxide films with nanocrystals prepared by carbon ion implantation

The chemical and phase compositions of silicon oxide films with self-assembled nanoclusters prepared by ion implantation of carbon into SiO _x (x < 2) suboxide films with subsequent annealing in a nitrogen atmosphere have been investigated using X-ray photoelectron spectroscopy in combination with depth profiling by ion sputtering. It has been found that the relative concentration of oxygen in the maximum of the distribution of implanted carbon atoms is decreased, whereas the relative concentration of silicon remains almost identical over the depth in the layer containing the implanted carbon. The in-depth distributions of carbon and silicon in different chemical states have been determined. In the regions adjacent to the layer with a maximum carbon content, the annealing results in the formation of silicon oxide layers, which are close in composition to SiO₂ and contain silicon nanocrystals, whereas the implanted layer, in addition to the SiO₂ phase, contains silicon oxide species Si²⁺ and Si³⁺ with stoichiometric formulas SiO and Si₂O₃, respectively. The film contains carbon in the form of SiC and elemental carbon phases. The lower limit of the average size of silicon nanoclusters has been estimated as ∼2 nm. The photoluminescence spectra of the films have been interpreted using the obtained results.     

Change of immitance during electroforming and resistive switching in the metal-insulator-metal memristive structures based on SiO<Subscript> <Emphasis Type="Italic">x</Emphasis> </Subscript>

The change of the immitance of the metal–insulator–metal memristive structures based on SiO_x, which is observed during electroforming and resistive switching, confirms the formation of conducting channels (filaments) in the insulator during forming and their rupture upon a transition of the structure to a highresistance state. The observed switching of the differential capacitance and conductivity synchronously with the switching of current (resistance) can substantially extend the functional applications of memristive devices of this type.     

Reaction of acetylenedicarboxylic acids esters with 4,5-dihydro-1<Emphasis Type="Italic">H</Emphasis>-pyrazole-1-carbothioamides and 3,4,5,6-tetrahydro-2<Emphasis Type="Italic">H</Emphasis>-1,2,4-triazepine-3-thiones

The reactions of dimethyl acetylenecarboxylate with 3,4,5,6-tetrahydro-2H-1,2,4-triazepine-3-thiones and 4,5-dihydro-1H-pyrazole-1-carbothioamides are convenient methods for the synthesis of 7,8-dihydrothiazolo[3,2-b][1,2,4]triazepin-3-ones derivatives and methyl esters of (2Z)-[2-(4,5-dihydro-1H-pyrazol-1-yl)-4-oxo-1,3-thiazol-5(4H)-ylidene]acetic acids, respectively. The reaction of methyl propynoates with 4,5-dihydro-1H-pyrazole-1-carbothioamides or with 5,5,7-trimethyl-2,4,5,6-tetrahydro-3H-1,2,4-triazepine-3-thione gives 2-(4,5-dihydro-1H-pyrazol-1-yl)-4H-1,3-thiazin-4-ones.     

The influence of P<Superscript>+</Superscript>, B<Superscript>+</Superscript>, and N<Superscript>+</Superscript> ion implantation on the luminescence properties of the SiO<Subscript>2</Subscript>: nc-Si system

The possible mechanisms of the influence of implanted impurities of Group III and V elements on the luminescence properties of a system consisting of silicon nanocrystals in SiO₂ are considered and generalized. The effect of boron and nitrogen ion implantation on the photoluminescence intensity is investigated experimentally. The experimental results and previously reported data on the ion-implantation doping with phosphorus are discussed in terms of the mechanisms under consideration. The state of implanted phosphorus is determined using x-ray photoelectron spectroscopy. It is shown that the enhancement and degradation of the photoluminescence depend on the type of implanted impurities and the conditions of postimplantation heat treatment.     

The Boundary Control Approach to the Titchmarsh-Weyl <Emphasis Type="Italic">m</Emphasis>–Function. I. The Response Operator and the <Emphasis Type="Italic">A</Emphasis>–Amplitude

We link the Boundary Control Theory and the Titchmarsh-Weyl Theory. This provides a natural interpretation of the A?amplitude due to Simon and yields a new efficient method to evaluate the Titchmarsh-Weyl m?function associated with the Schrödinger operator H = ?? _x ²  + q(x) on L ₂(0, ∞) with Dirichlet boundary condition at x = 0.     

Properties of Al2O3: nc-Si nanostructures formed by implantation of silicon ions into sapphire and amorphous films of aluminum oxide

Physics of the Solid State - Photoluminescence, infrared Fourier spectroscopy, Raman scattering, transmission electron microscopy, and electron diffraction were used to study the luminescent,...     

Measurement of cumulative-photon spectra at high transverse momenta in 12C9Be interactions at an energy of 3.2 GeV per nucleon

For ¹²C⁹Be interactions at a kinetic beam energy of 3.2 GeV per nucleon, the spectra of photons at laboratory angles in the range 55°–73° were measured off the kinematical region available to the interaction of single nucleons within colliding nuclei. The use of a fast trigger for selecting events involving the production of high-transverse-momentum photons made it possible to measure spectra off the kinematical boundary of four-nucleon interaction. It is shown that the proposed procedure is adequate to the problem of searches for and investigation of flucton-flucton interaction. In the kinematical region where flucton-flucton interaction can manifest itself, the cross sections in question are on the same order of magnitude as respective model predictions. In order to draw definitive conclusions on the role of flucton-flucton interaction, it is highly desirable to extend the angular range of the measurements toward smaller angles.     

Polarized proton beam acceleration at the Nuclotron with the use of the solenoid Siberian Snake

The possibility of polarized protons acceleration up to 6 GeV at the Nuclotron is analyzed. Proton beam acceleration by application of full and partial Siberian Snakes are considered. Compensation of the betatron coupling introduced by the solenoids is done by a compact insert of quadrupoles with a certain symmetry of their tilt angles around the orbit direction. Such a scheme has a shorter total length of the quadrupoles than the known compensation schemes. The Snakes installed within one, 3.2 m long, or two, 2 × 3.2 m long, straight sections of the Nuclotron lattice are considered.