Formation of hydrogenated amorphous carbon films from polymer pyrolysis

Free-standing and supported hydrogenated amorphous carbon films (a:C–H) were prepared upon pyrolysis of the polymer formed by ethanolamine (EA) and citric acid (CA), under an ambient atmosphere at 300 °C. EA facilitates the formation of the macroscopic films, while CA is essential for obtaining the a:C–H microstructure, which comprises a mixture of sp² and sp³ carbon. Received: 29 May 2001 / Accepted: 17 August 2001 / Published online: 20 December 2001     

加肋圆柱壳在轴压作用下的屈曲和后屈曲

本文讨论完善和非完善的,纵向加肋和正交加肋圆柱壳在轴压作用下的屈曲和后屈曲性态.依据文[1]提供的圆柱薄壳屈曲的边界层理论及其分析方法,给出了加肋圆柱壳在轴压作用下的屈曲和后屈曲理论分析.本文同时讨论肋骨与壳板材料不同时对加肋圆柱壳屈曲和后屈曲性态的影响.     

Theoretical Research on a Kind of Quantum Left-handed Metamaterial

Recently, research on left-handed materials （LHMs） has attracted considerable attentions. The LHMs are a kind of metameterial which have negative permittivity and negative permeability, which lead to negative refractive index in a frequency range. The LHMs that have been available so far are in the microwave range and are usually composed of classical particles, such as split-ring resonators. Some quantum phenomena such as spontaneous emission of atoms in the LHMs which are considered to be ＇classical background＇ have also been investigated. Many potential applications of LHMs have been proposed, such as superlenses which, in principle, can achieve arbitrary subwavelength resolution.     

平面火花隙三电极开关研制及性能测试

 研制了一种适用于平行板传输连接的平面火花隙三电极开关，开关正负电极为半圆形状，触发电极为细条状。将之替代立体式（半球形电极）火花隙三电极开关并应用于爆炸箔起爆装置中，装置回路参数将得以优化。实验测试了空气间隙为4.12， 3.14和2.2 mm的平面火花隙三电极开关的性能。结果表明，在开关间隙间距一定的情况下，随着电压的升高，开关间隙的放电时延和分散时间呈指数降低，开关电感小于15 nH；对于不同范围内的应用电压，使用不同间隙间距的开关，其分散时间不大于10 ns。该开关应用于较低充电电压（小于10 kV）的脉冲功率装置中，与立体式火花隙三电极开关相比，回路电感降低了约50 nH，放电周期缩短近1/3，峰值电流增加约1/3。     

量子位Heisenberg XX开链中边界量子位之间的纠缠

Heisenberg 开链对研究量子态在自旋链上的传递有重要的意义.本文研究了五量子位Heisenberg XX 开链中边界量子位之间的纠缠，在该系统中引入了磁杂质和系统杂质且它们之间满足线性关系时，该系统可以精确求解，此时边界量子位之间存在纠缠.选择合适的杂质参数和磁场参数，该边界纠缠的最大值可达到0.5. 关键词： Heisenberg XX开链 边界纠缠 杂质     

Oxidation process of SiGe on SOI substrates

The oxidation of SiGe film epitaxial grown on top of SOI wafers has been studied. These SiGe/SOI samples were oxidized at 700, 900, 1100 °C. Germanium atoms were rejected from SiGe film to SOI layer. A new Si_1−xGe_x (x is minimal) layer formed at SiGe/Si interface. As the germanium atoms diffused, the new Si_1−xGe_x (x is minimal) layer moved to Si/SiO₂ interface. Propagation of threading dislocation in SiGe film to SOI substrate was hindered by the new SiGe/Si interface. Strain in SOI substrate transferred from SiGe film was released through dislocation nucleation and propagation inner. The relaxation of SiGe film could be described as: strain relaxed through strain equalization and transfer process between SiGe film and SOI substrates. Raman spectroscopy was used to characterize the strain of SiGe film. Microstructure of SiGe/SOI was observed by transmission electron microscope (TEM).     

科学和艺术

科学与完美是不是一致的？科学家们是否有权使用完美这个词？至少，对于物理学家和数学家来说答案是肯定的“是”．2002年，温伯格（Steven Weinberg）写道：“近代物理学的一些重要方程式是科学知识的永久部分，甚至比它们较早出现的美丽大教堂还要经久不衰．”1960年代，狄拉克（Paul A．M．Dirac）有句名言：“完整的方程式之完美较之它们适合实验结果更为重要．”1965年诺贝尔物理学奖获得者费因曼（Richard P．Feynman）也坚信他提出的一项理论，即使该理论显得与实验数据有矛盾．1957年，他写道：“理论是优雅和完美的，重大事件是短暂的闪光．”     

谈物理实验教学中学生科学素质的培养

物理教学要实现由“应试教育”向素质教育的转轨，必须改单纯的“学科教育”为“科学教育”，即不仅要让学生掌握必要的物理知识，还要为学生的整体素质发展奠定必需的科学能力和科学品质的基础．笔者通过多年的教学实践和研究深刻地认识到，在物理教学中，加强实验教学是培养学生科学素质的重要途径和关键，也是物理学科实施素质教育的一个十分重要的方面．     

An Integrated Selection Formulation for the Best Normal Mean: The Unequal and Unknown Variance Case

This paper considers an integrated formulation in selecting the best normal mean in the case of unequal and unknown variances. The formulation separates the parameter space into two disjoint parts, the preference zone (PZ) and the indifference zone (IZ). In the PZ we insist on selecting the best for a correct selection (CS₁) but in the IZ we define any selected subset to be correct (CS₂) if it contains the best population. We find the least favorable configuration (LFC) and the worst configuration (WC) respectively in PZ and IZ. We derive formulas for P(CS₁|LFC), P(CS₂|WC) and the bounds for the expected sample size E(N). We also give tables for the procedure parameters to implement the proposed procedure. An example is given to illustrate how to apply the procedure and how to use the table.     

Structural evolution in amorphous silicon and germanium thin films.

The structural evolution in amorphous silicon and germanium thin films has been investigated by high-resolution transmission electron microscopy (HRTEM) in conjunction with autocorrelation function (ACF) analysis. The results established that the structure of as-deposited semiconductor films is of a high density of nanocrystallites embedded in the amorphous matrix. In addition, from ACF analysis, the structure of a-Ge is more ordered than that of a-Si. The density of embedded nanocrystallites in amorphous films was found to diminish with annealing temperature first, then to increase. The conclusions also corroborate well with the results of diminished medium-range order in annealed amorphous films determined previously by a variable coherence microscopy method.