Rb(62D)原子与基态Rb原子,H2分子碰撞转移截面

本文用荧光法测量Rb(6²D)原子与基态Rb原子,H₂分子碰撞转移截面。结果表明:Rb(6²D)-Rb(5²s)转移截面为σ_fs=67×10^-14cm²,σ_tr=4.3×10^-14cm²,Rb(6²D)—H₂转移截面为σ_fs 关键词：     

自由电子激光振荡器的二维数值模拟

在柱二维坐标系中,用数值计算方法求解了摇摆器内电子模拟方程组、光场方程组和无源区(不含摇摆器区)经非自适应方法变换后的无源旁轴波动方程并设计了相应的程序R_2D。用该程序计算的数值结果表明,在有源条件下二维数值模拟结果与高斯光束近似下的数值模拟结果符合较好;取完全相同的计算条件R-2D程序与洛斯阿拉莫斯实验室(LANL)的FELEX程序的计算结果符合较好;初步认为LANL实验数据的物理图象合理,数值结果基本可信;最后给出北京自由电子激光器(BFEL)的一些物理数据。     

Application of microwave digestion to the preparation of sediment samples for arsenic speciation

Several extraction procedures are described allowing arsenic speciation in sediments. The extraction of organometallic compounds such as dimethylarsinic acid or monomethylarsonic acid is quite simple since these compounds are stable in the different extraction media (HCl/ HNO₃, H₃PO₄, ammonium oxalate) and are easily released independent of the extraction mode (magnetic stirring or microwave solubilization). Extraction yields are higher than 96% for these two arsenic forms. An HCl/HNO₃ microwave solubilization procedure allows the quantitative solubilization of mineral arsenic, but the differentiation between the two oxidation states is not possible owing to the oxidation of As(III) to As(V). Extractions with orthophosphoric acid or ammonium oxalate allow the solubilization of mineral arsenic with extraction yields ranging from 90 to 95% and the differentiation between As(III) and As(V). Nevertheless, the amount of As(III) is underestimated owing to its partial oxidation. The usefulness and advantages of microwave solubilization compared with conventional extraction procedures are discussed. Received: 17 May 1996 / Revised: 19 September 1996 / Accepted: 25 September 1996     

Monoidal functors on the category of representations of a triangular Hopf algebra

Let (H,R) be a triangular Hopf algebra. The monoidal functors on the category of representations ofH is studied, and a universal quantum commutative algebraSeR(M) and a dual H°-comoduleM° for any H-moduleM with an integrale are constructed. Both constructions given here have tensor isomorphism properties. Project supported by the National Natural Science Foundation of China.     

腔靶等离子体辐射温度空间分布测量

本文描述了用膜吸收法测量激光等离子体辐射温度空间分布的原理和方法给出了柱形缝靶轴向辐射温度随空间位置变化的特征,对测量结果进行了分析讨论。     

Adaptation of an echelle spectrograph to a large CCD detector

A broad range echelle spectrograph with a CCD matrix detector is developed for different applications in atomic spectroscopy. The compact optical design in combination with a dispersive entrance slit illumination offers a low stray light level and high throughput in the UV spectral region comparable only with spectrographs of higher focal length. Ray tracing calculations for typical wavelengths and the multi-line spectrum of an iron arc show the excellent overall spectrum quality. The subtraction of two partial spectra of different steel alloys demonstrates the spectra evaluation possibilities of the CCD spectrograph.     

Analysis and implementation of cross sync period underwater acoustical positioning techniques for underwater targets

I.IlltroductionWhenanactiveunderwateracousticalpositioningsystemissearchingforanunderwatertarget,itisnecessaryforittocompleteatransmittingandreceivingcycIewithineachworkingperiodinordertofindoutthelocationofthetargetcorrectly.Forexample,whenanunder-wateracoustica1synchronouspositioningsystemistrackinganunderwatertargetwithagivensynchr0nizingperiod,thepropagati0ntimeofthepositioningsignaltravellingfr0mthetaJrgettothearrayofthesystemshouldbelessthanthesynchronizingperiod0therwisetargetdis-tance…     

多孔硅制备过程中B,P杂质原子的作用

采用DV-Xα方法对多孔硅形成过程中位于表层的B和P杂质原子的作用进行研究,结果表明位于顶层硅原子层中的B和P杂质原子均可削弱其邻近的Si-Si键强度,因而可能导致出现腐蚀的突破点,再通过分析杂质对表面区势场的改变,可以认为位于顶层硅原子层中的B杂质原子产生腐蚀的突破点的可能性更大。 关键词：     

PHOTOLUMINESCENCE STUDY ON Hg1-xCdxTe THIN FILM IMPLANTED WITH As ION

Photoluminescence spectra of a series of MBE-grown Hg_1-xCd_xTe samples with the same mole fraction of about x≈0.39 have been measured at different temperatures from 5 to 100 K. By aid of the temperature and exciting laser power dependence of photoluminescence peak energy and relative intensity, as well as of the comparison with other measurements, four main structures dominating in the photoluminescence spectra are attributed to band to band, D^oX, A^oX and D^oA^o transitions. A deep donor state level located at about 8.5meV below the bottom of the conduction band has been observed and is determined to be due to the arsenic-occupied mercury vacancies. Two acceptor levels located at about 14.5 meV and about 31.5 meV above the top of the valance band have also been found from the measuements, which are identified as the mercury vacancies and As in anion site, respectively.