Photopolymerization of N-substituted phenyl maleimide initiated with N,N-dimethyl-4-toluidine

Several N-phenyl maleimides with different p-substituents have been synthesized from the maleic anhydride and relevant aromatic amine. In the presence of N,N-dimethyl-4-toluidine (DMT), the N-substituted phenyl maleimide (4-XPhMIs) could be polymerized under UV irradiation. It was observed that a new absorption appeared on the UV-Vis spectrum of the mixture solution of 4-XPhMI and DMT, which reveals the formation of charge-transfer complex in the ground state. It was found that the fluorescence of DMT was quenched by 4-XPhMI and the quenching constant of 4-XPhMI, obtained from the Stern–Volmer plot, increases with the electron-deficiency of ethylene double bond of 4-XPhMI. The dynamic quenching of the fluorescence of DMT by 4-XPhMI suggests the formation of exciplex in excited state between DMT and 4-XPhMI. The radicals formed in the systems have been detected by spin-trapping techniques and electron paramagnetic resonance (EPR) spectrometer. Based on all of these results, it has been proposed that the initiation process of the polymerization involves the formation of exciplex and the initial radicals were produced by proton-transfer in the exciplex from DMT to 4-XPhMI. © 1997 John Wiley & Sons, Inc.     

Synthesis of arylsulfonyl-substituted indolo[2,1-a]isoquinolin-6(5H)-one derivatives via a TBAI-catalyzed radical cascade cyclization

We have developed a metal-free radical cascade reaction of N-substituted 2-aryl indoles with readily available sulfonyl hydrazides for the rapid construction of arylsulfonyl-substituted indolo[2,1-a]isoquinolin-6(5H)-one derivatives. With the TBAI–TBHP catalytic system, a broad series of structurally diverse indolo[2,1-a]isoquinolin-6(5H)-one derivatives were obtained in moderate to excellent yields. The reaction features mild reaction conditions, operationally easiness, scaled-up feasibility, and high functional-group-tolerance.     

超宽禁带半导体 β-Ga2O3单晶生长突破2英寸

<正>氧化镓(β-Ga_2O_3)单晶是一种第四代超宽禁带氧化物半导体,其禁带宽度为4.8~4.9eV,具有独特的紫外透过特性(吸收截止边~260nm);击穿电场强度高达8MV/cm,是Si的近27倍、SiC及GaN的2倍以上,巴利加优值分别是SiC、GaN的10倍、4倍以上,并且可以采用熔体法生长大尺寸体单晶,因此β-Ga_2O_3已成为超高压功率器件和深紫外光电子器件的优选材料之一。由于其在军事、能源、医疗、环境等领域的重要应用价值,近年来,氧化镓材料及器件的研究与应用成为当前美国、日本、德国等国家的研究热点和竞争重     

2D/3D ZnIn2S4/TiO2复合物的原位构筑及其提高的光催化性能

通过高温煅烧和油浴的方法构筑二维/三维(2D/3D) ZnIn₂S₄/TiO₂异质结, 应用于光催化降解罗丹明B (RhB)和四环素(TC), 来研究异质结的构筑对TiO₂可见光响应范围和光生载流子对分离效率的影响. 结果表明, TiO₂维持了MOFs的形貌, 显示窄的可见光响应范围和高的光生电荷复合率, 与ZnIn₂S₄纳米片复合后, TiO₂的比表面积增大, 光催化活性位点增多. 带隙宽度也由TiO₂的3.23 eV减小到ZnIn₂S₄/TiO₂-II的2.52 eV, 从而获得了更宽的可见光响应范围. 能带结构表明ZnIn₂S₄/TiO₂是type II型异质结, 提高了光生载流子对的分离与转移效率. 在可见光照射下, ZnIn₂S₄/TiO₂-II显示了最高的RhB光催化降解效率(93%), 分别是TiO₂和ZnIn₂S₄的18和2倍. 同时, ZnIn₂S₄/TiO₂-II也显示出比TiO₂和ZnIn₂S₄更高的TC降解效率(90%). 循环实验表明ZnIn₂S₄/TiO₂-II能保持良好的稳定性, 经5次循环实验后仍能降解83%的RhB. 研究表明基于MOFs衍生的TiO₂构筑2D/3D ZnIn₂S₄/TiO₂异质结是提高TiO₂光催化性能的一条有效途径.     

Atom transfer radical polymerization of vinyl monomers in the presence of tetraethylthiuram disulfide

In situ ATRPs of MMA, St in the presence of TD catalyzed by FeCl₃/PPh₃ and CuBr₂/bpy have been studied, respectively. The results showed that the initiator Et₂NCS₂X (X = Cl or Br) and catalyst FeCl₂ or CuBr were formed in situ from the initiating components and the polymerization exhibited living radical polymerization characteristics. In the case of St polymerization with TD/CuBr/bpy initiating system, an inverse ATRP was observed.     

BeF2分子基态势能函数研究

利用密度泛函理论（DFT）B3LYP/aug-cc-PVTZ方法对BeF和BeF2分子进行计算, BeF分子的基态电子态为X2Σ+,平衡核间距Re=0.1367 nm,BeF2分子最稳定构型为D∞h构型,基态电子态为X1Σg+,离解能De=13.4 eV。利用最小二乘法拟合了BeF分子基态的Murrell-Sorbie势能函数,并得到其光谱数据与力常数。结合全局多体项展式方法,导出了基态BeF2分子基态势能函数的解析表达式,该函数准确反映了BeF2分子的结构以及静态反应特征,这些结果为进一步探索BeF2的微观分子反应动力学提供了基础。     

φ-混合序列的Hájeck-Rènyi不等式

得到了 -混合随机变量序列的 Hájeck- Rènyi不等式及强大数律 ,所得结果是独立随机变量情形时相应结果的推广 .     

具有本征低晶格热导率的硫化银快离子导体的热电性能

硫化银(Ag_2S)是一种典型的快离子导体材料,前期关于Ag_2S的研究主要集中在光电和生物等领域.最近的研究表明, a-Ag_2S具有和金属一样的良好延展性和变形能力.但是, Ag_2S的热电性能尚无公开报道.本工作合成了单相Ag_2S化合物,系统研究了其在300—600 K范围的物相变化、离子迁移特性和电热输运性质.研究发现, Ag_2S在300—600 K温度区间表现出半导体的电输运性质.由于单斜-体心立方相晶体结构转变, Ag_2S的离子电导率、载流子浓度、迁移率、电导率、泽贝克系数等性质在455 K前后出现急剧变化.在550 K, Ag_2S的功率因子最高可达5μW·cm~(–1)·K~(–2). Ag_2S在300—600 K温度区间均表现出本征的低晶格热导率(低于0.6 W·m~(–1)·K~(–1)). S亚晶格中随机分布的类液态Ag离子是导致b-Ag_2S体心立方相具有低晶格热导率的主要原因.在573 K, Ag_2S的热电优值可达0.55,与Ag_2Se, Ag_2Te, CuAgSe等已报道的Ag基快离子导体热电材料的性能相当.     

Optical emission behaviors of C,Al, Ti,Fe, Cu,Mo, Ag,Ta, and W wire explosions in gaseous media

Electrical explosion of wires (EEW) is a promising method for nanopowders preparation and insensitive explosives ignition. Plasma radiation plays a key role in the ignition process while little attention has been paid on this phenomenon before. This letter introduces optical emission behaviors of electrical explosions for nine materials in air, Helium, and Argon with the SWE-2 platform. Experimental results indicated that the light intensity for non-refractory metals decayed rapidly after the discharge ended. In contrast, for refractory metals, the emission continued to increase and lasted for a long period after the discharge ceased. As for spectra, the emission consisted of line and continuous spectra. With the atomic number increased, the density of lines grew rapidly, leading to a “continuous” appearance.