Scanning tunnelling microscope studies of growth of RuO2（110） thin layer on Ru（0001）

This paper reports that the growth of RuO_x(110) thin layer growth on Ru(0001) has been investigated by means of scanning tunnelling microscope (STM). The STM images showed a domain structure with three rotational domains of RuO_x(110) rotated by an angle of 120℃. The as-grown RuO_x(110) thin layer is expanded from the bulk-truncated RuO_x(110) due to the large mismatch between RuO_x(110) and the Ru(0001) substrate. The results also indicate that growth of RuO_x(110) thin layer on the Ru(0001) substrate by oxidation tends first to formation of the Ru-O (oxygen) chains in the [001] direction of RuO_x(110).     

新疆玛纳斯湖水蒸发过程研究

本文依据Na^ ,K^ ,Mg^2 //Cl^-,SO4^2--H2O五元水盐体系相图，对新疆玛纳斯盐湖水进行原料分析、理论研究、25℃等温蒸发实验和自然蒸发实验，研究了该湖水蒸发过程中盐类的析出规律及湖水中各组分浓度变化的规律，为进行工艺实验及将来的综合开发利用提供了可靠依据。     

关于四元数矩阵乘积迹的不等式

设 H~(m×n)为 m×n 四元数矩阵的集合,σ_1(A)≥…≥σ_n(A)为 A∈H~(mxn)的奇异值。本文证明了:1)设 A∈H~(mxm),B∈H~(mxm),r=min(m,m),则|tr(4B)|≤c r σ_i(A)σ_i(B).2)设 A_i∈H~(mxm),i=1,2,…,n,(A_1A_2…A_n)k为 A_1A_2…A_n 的任一个 k 阶主子阵,则|tr(A_1.A_2…A_n)_k|≤sun form i=1 to k σ_i(A_1)…σ_i(A_n).我们还得到四元数矩阵迹的其它一些不等式。这些结果推广和改进了文[1],[2]中的结果,进一步解决了 Bellman 猜想。     

空心阴极灯激发的微波等离子体炬原子/离子荧光光谱研究--钙的原子/离子荧光光谱

用强短脉冲供电技术的空心阴极灯作激发源、微波等离子体炬作原子／离子化器，建立了原子／离子荧光光谱实验装置。详细研究了微波等离子体功率、观察高度、空心阴极灯电流等因素对原子／离子荧光信号强度的影响，测量了系统对Ca的原子／离子荧光光谱的检出限。     

大学物理实验中分类教学的探索和研究

本文对大学物理实验课程的教学现状进行了分析,提出了对大学物理实验课程进行分类教学改革的指导思想和遵循的原则及采取的措施。     

Oxidation process of SiGe on SOI substrates

The oxidation of SiGe film epitaxial grown on top of SOI wafers has been studied. These SiGe/SOI samples were oxidized at 700, 900, 1100 °C. Germanium atoms were rejected from SiGe film to SOI layer. A new Si_1−xGe_x (x is minimal) layer formed at SiGe/Si interface. As the germanium atoms diffused, the new Si_1−xGe_x (x is minimal) layer moved to Si/SiO₂ interface. Propagation of threading dislocation in SiGe film to SOI substrate was hindered by the new SiGe/Si interface. Strain in SOI substrate transferred from SiGe film was released through dislocation nucleation and propagation inner. The relaxation of SiGe film could be described as: strain relaxed through strain equalization and transfer process between SiGe film and SOI substrates. Raman spectroscopy was used to characterize the strain of SiGe film. Microstructure of SiGe/SOI was observed by transmission electron microscope (TEM).     

LONG-TIME BEHAVIOR OF A CLASS OF REACTION DIFFUSION EQUATIONS WITH TIME DELAYS

The present paper devotes to the long-time behavior of a class of reaction diffusion equations with delays under Dirichlet boundary conditions. The stability and global attractability for the zero solution are provided, and the existence, stability and attractability for the positive stationary solution are also obtained.     

标的资产价格服从跳-扩散过程的具有随机寿命的未定权益定价

本文在假设被终止或取消的风险与重大信息导致的标的资产价格跳跃的风险为非系统风险的情况下,应用无套利资本资产定价,推导出了标的的资产的价格服从跳-扩散过程具有随机寿命的未定权益满足的偏微分方程,然后应用Feynman-kac公式获得了未定权益的定价公式.     

Three New Polyoxygenated Steroids from Two Species of the South China Sea Gorgonian Muricella flexuosa and Menella verrucosa Brundin

Three new polyoxygenated steroids, muricesteroid ( 1 ), and menellsteroids A ( 2 ) and B ( 3 ), were isolated from two species of the South China Sea gorgonian Muricella flexuosa and Menella verrucosa Brundin , respectively. The structures of these new compounds were elucidated on the basis of extensive spectroscopic analysis, chemical methods and comparison with known related compounds.