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101.
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103.
Tens of Cd0.9Zn0.1Te wafers from three ingots grown by the vertical Bridgman method (VBM) are characterized by infrared (IR) transmission. Four types of distinct IR transmission spectra are found for these wafers. Each of them corresponds to one kind of wafers with specified quaJities. At the same time, approximate mathematical relations exist between the wafer dislocation density and their IR transmissions at the wavenumber 4000cm^-1, as well as between the resistivity and the IR transmissions at the wavenumber 500cm^-1. The reasons of the above results are attempted to be given. 相似文献
104.
Experimental results demonstrate that the band gap of colloidal suspension crystal changes with both the thickness of crystal and the dispersity of micro-spheres.As the thickness decreases,a red shift of band gap is observed,and there is a maximum of red shift.The values of the maximum red shifts are dependent on the standard deviations of micro-spheres.The experimental results are consistent with theoretical calculation.As the colloidal suspension crystal is assembled from micro-spheres with a standard deviation of 8.4% in a thick cell,an incident angles independent broadband is observed,which is explained as an amorphous structure.Two amorphous models are discussed. 相似文献
105.
Photoluminescence (PL) and infrared transmission spectra are used to characterize In-doped Gd0.9Zn0.1 Te (GdZnTe:In).The PL spectrum reveals that there are two other strong emissions situated at 1.54 eV and 1.62 eV as well as the near band edge emission.This indicates that the doped In can lead to two donor levels of 0.12eV and 0.04eV in the CdZnTe band construction,respectively.The IR transmission spectra show that when the wavenumber is larger than 1000cm^-1,the CdZnTe:In was almost opaque to the IR emission.Then its IR transmission rapidly increases to 52% when the wavenumber is decreased to 350cm^-1 and then holds constant.This confirms the existence of the donor level of 0.12 eV. 相似文献
106.
采用气相法对钛酸钡陶瓷扩渗Nd元素,经Nd扩渗BaTiO3陶瓷的电性能发生了十分显著的变化。通过正交实验,确定了最佳扩渗条件,当Nd的浓度为2%,扩渗时间为4h,扩渗温度为860℃时,BaTiO3陶瓷的导电性最好,其室温电阻率从4 3×109Ω·m下降为37 45Ω·m,而且随着温度升高,交流电导逐渐增大,导电性更强。Nd扩渗使BaTiO3陶瓷的介电常数增加,而介电损耗降低,BaTiO3陶瓷的介电性能得到了显著改善。经Nd扩渗BaTiO3陶瓷的介电常数随着温度的变化呈明显的PTC效应,其居里温度降低为118 1℃。经XPS测试分析,给出了Nd扩渗BaTiO3陶瓷体系中各元素结合能位置的峰值,并表明Nd扩渗BaTiO3陶瓷中Nd,Ba,Ti都存在变价,因而导致了BaTiO3陶瓷导电性的增强。 相似文献
107.
α、β、γ、δ-四(4-三甲氨基苯基)卟啉与钌(Ⅲ)显色反应的研究 总被引:4,自引:0,他引:4
本文研究了α、β、γ、δ-四(4-三甲氨基苯基)卟啉(简称TAPP)和钌的显色反应。其最大的吸收波长位于436nm,表观摩尔吸光系数为5。25×10~5L·mol~(-1)·cm~(-1),钉的浓度在0~2.5μg/10ml范围内服从比尔定律,络合物的组成比为Ru:TAPP=1:1。该法用于合成矿样分析,结果满意。 相似文献
108.
109.
Nd2O3添加量对BaTiO3陶瓷介电性能的影响 总被引:4,自引:0,他引:4
BaTiO3 ceramics doped with Nd2O3(the additive content was respectively 0.001,0.002,0.003,0.005,0.01,0.03mol)were prepared by Sol-Gel method. Effects of Nd2O3 contents on the dielectric constant (ε), the dielectric loss (tanδ) ,the Curie-temperature (TC) and the resistivity (ρ) of BaTiO3 ceramic were studied. When Nd2O3 content was 0.001mol and 0.002mol, the dielectric constant was increased obviously, but the dielectric loss was also increased. When Nd2O3 content was 0.003mol, the dielectric constant was increased, and the dielectric loss was decreased, which was suitable for application in condenser. The resistivity was decreased obviously with the increasing of Nd2O3 contents, the resistivity was the smallest when Nd2O3 content was 0.001mol. The Curie-temperature was also decreased with the increasing of Nd2O3 contents. 相似文献
110.
聚吡咯葡萄糖氧化酶电极的生物电化学响应 总被引:2,自引:0,他引:2
采用分步骤合过程,制备了以聚吡咯膜为载体的葡萄糖氧化酶电极,探讨了其生物电化学响应特性,计算了酶催化反应的有关动力学参数。与溶解态酶相比,该电极表现出良好的生物电化学特征,而且酶蛋白对溶液温度的稳定性有显著提高。 相似文献