Enhanced performance in organic photovoltaic devices with a KMnO4 solution treated indium tin oxide anode modification

<正>The properties of poly（3-hexylthiophene）:（6,6）-phenyl C₆₁ butyric acid methyl ester（P3HT:PCBM） organic photovoltaic devices（OPVs） with an indium tin oxide（ITO） anode treated by a KMnO₄ solution are investigated.The optimized KMnO₄ solution has a concentration of 50 mg/L,and ITO is treated for 15 min.The modification of ITO anode results in an enhancement of the power conversion efficiency（PCE） of the device,which is responsible for the increase of the photocurrent.The performance enhancement is attributed to the work function modification of the ITO substrate through the strong oxygenation of KMnO₄,and then the charge collection efficiency is improved.     

状态模和两个变量的环链多项式

State representation is used to discuss the link with two variables， and the estimation of breadth of the two variables(say I and m) is given for S-links.     

准东次烟煤中长链烷醛的富集与分析(英文)

用等体积的二硫化碳(CDS)与丙酮的混合溶剂萃取了准东次烟煤得到可溶物,然后依次用石油醚(PE)和CDS萃取该可溶物为PE萃取物(E1)和CDS萃取物(E2)。在硅胶层析柱中依次用PE和30%的CDS/PE对E2进行洗脱,富集了长链烷醛(LCNAs,C18~27)并用气相色谱/质谱联用仪分析了LCNAs。分级萃取和柱层析提供了从中低阶煤中富集LCNAs的有效方法。LCNAs可能是煤中重要的生物标志物。     

51V GaN基高压LED的热分析

设计并制备了51 V高压LED。对器件进行了大电流冲击试验并对器件的损毁原因进行了分析。运用有限元分析软件ANSYS对LED关键结构部位进行参数化建模及热分布模拟,得到其稳态的温度场分布;然后经过与红外热像仪成像图对比,得出电极烧毁的原因在于芯粒连接处的电极过薄过窄而导致的电阻过大,为后续设计更可靠的高压LED提供了参考。对芯片分别进行蓝光及色温5 000 K的白光封装,并分别测量了热阻,涂覆荧光粉的白光灯珠的热阻要比没有涂覆荧光粉的蓝光灯珠高约4℃/W。同时,51 V高压LED的热阻比1 W大功率LED要高,说明高压LED的散热性能比常规LED要差,这可能与高压LED具有深沟槽及众多的互联电极结构有关。     

Enhanced performance in organic photovoltaic devices with KMnO4 solution treated indium tin oxide anode modification

The properties of poly(3-hexylthiophene):(6,6)-phenyl C₆₁ butyric acid methyl ester (P3HT:PCBM) organic photovoltaic devices (OPVs) with indium tin oxide (ITO) anode treated by KMnO₄ solution are investigated. The optimized KMnO₄ solution has a concentration of 50 mg/L, and ITO is treated for 15 min. The modification of ITO anode results in an enhancement of the power conversion efficiency (PCE) of the device, which is responsible for the increase of the photocurrent. The performance enhancement is attributed to the work function modification of the ITO substrate through the strong oxygenation of KMnO₄, and then the charge collection efficiency is improved.     

餐厨垃圾高温水解酸化过程研究

采用静态试验方式对餐厨垃圾在高温条件下的水解酸化过程进行了研究,探讨了总固体含量(TS)分别为10%、20%与27%时,物料水解酸化过程中 pH、C/N、氨氮、醇类的变化及挥发性有机酸(VFA)的累积情况。结果表明,试验期间,3种 TS 条件下物料的 pH 值均基本稳定在4~5之间,并于3~5 d 内达到最低值; C/N 值与 VFA 的累积有关,呈先升高后降低趋势;总醇浓度总体上呈降低趋势;3种 TS 条件下的氨氮平均质量浓度分别在200 mg·L-1左右、600~900 mg·L-1之间和600~1300 mg·L-1之间; VFA 浓度不断上升,分别由1008,2382,2887 mg·L-1升至2282,5665,7159 mg·L-1, VFA 累积浓度与含固量成正相关。     

利用Al/AlAs中间层调控GaAs在Si(111)上外延生长的研究

为了实现Ⅲ-V器件在硅基平台上单片集成,近年来Ⅲ-V半导体在硅衬底上的异质外延得到了广泛研究。由于Ⅲ-V半导体与Si之间大的晶格失配以及晶格结构不同,在Si上生长的Ⅲ-V半导体中存在较多的失配位错及反相畴,对器件性能造成严重影响。而Si(111)表面的双原子台阶可以避免Ⅲ-V异质外延过程中形成反相畴。本文利用分子束外延技术通过Al/AlAs作为中间层首次在Si(111)衬底上外延生长了GaAs(111)薄膜。通过一系列对比实验验证了Al/AlAs中间层的插入对GaAs薄膜质量的调控作用,并在此基础上通过低温-高温两步法优化了GaAs的生长条件。结果表明Al/AlAs插层可以为GaAs外延生长提供模板,并在一定程度上释放GaAs与Si之间的失配应力,从而使GaAs薄膜的晶体质量得到提高。以上工作为Ⅲ-V半导体在硅上的生长提供了新思路。     

静电对GaN基高压LED特性的影响

对GaN基绿光高压LED分别施加-500、-1 000、-2 000、-3 000、-4 000、-5 000和-6 000V的反向人体模式静电打击,每次静电打击后,测量样品的I-V特性曲线及光通量等参量,研究静电打击对GaN基高压LED器件性能的影响.结果表明:当样品经过-500,-1 000、-2 000、-3 000和-4 000V的静电打击后,由于LED器件内部产生了缺陷,发生了软击穿并且反向漏电流明显增加,但光通量的变化不明显;当经过-5 000V和-6 000V的静电打击后,由于发生了热模式击穿,温度迅速升高,在结区形成熔融通道,使LED的光通量明显减小,甚至衰减到未打击时的一半;在经受-6 000V的静电打击后,正向电压的减小和反向漏电流的增加更加明显,漏电现象更加明显,严重影响了器件的性能,最终使LED样品失效.     

Effects of NPB anode buffer layer on charge collection in ZnO/MEH-PPV hybrid solar cells

We investigate the effects of （N,N’-diphenyl）-N,N’-bis（1-naphthyl）-1,1’-biphenyl-4,4’-diamine （NPB） buffer layers on charge collection in inverted ZnO/MEH-PPV hybrid devices. The insertion of a 3-nm NPB thin layer enhances the efficiency of charge collection by improving charge transport and reducing the interface energy barrier, resulting in better device performances. S-shaped light J–V curve appears when the thickness of the NPB layer reaches 25 nm, which is induced by the inefficient charge extraction from MEH-PPV to Ag. Capacitance–voltage measurements are performed to further investigate the influence of the NPB layer on charge collection from both simulations and experiments.