表面起伏光栅形成速率的影响规律 Ⅰ.偶氮生色团种类和官能度的影响

设计并合成了含有不同生色团以及不同官能度的环氧树脂基偶氮高分子 ,系统研究了偶氮生色团的种类和官能度对光栅形成速率的影响规律 .实验结果表明 ,偶氮苯对位是羧基的聚合物的光栅形成速率明显快于偶氮苯对位是硝基的聚合物 ,光栅形成速率随偶氮生色团官能度的增加而加快 .这两类聚合物都可以形成规整的可擦式表面起伏光栅     

铂配位的腺嘌呤质子化的理论研究

用量子化学从头算研究一系列平面四方金属配体作用于腺嘌呤N₇位点对其质子化的影响。计算结果表明气相中，配合物质子化能力主要受长程静电效应影响，不同金属离子的影响差别甚微。综合考虑极性溶剂影响后长程静电效应影响显著降低。NBO电荷布居分析表明质子化位点电子云密度的变化直接影响该位点质子化能力。     

用Reichardt''''s Dye研究碳酸酯溶剂极性的经验参数ET(30)

使用2,6-二苯基-4-(2,4,6-三苯基-1-吡啶鎓)苯氧内盐染料(Reichardt's Dye)研究锂离子电池中非水电解质溶剂碳酸酯的极性,并测量极性经验参数ET(30)碳酸乙烯酯为48.6,碳酸丙烯酯为46.1,2,3-碳酸丁烯酯为45.7,碳酸二甲酯为39.0,碳酸甲乙酯为37.3,碳酸二乙酯为37.0.LiClO4加入到碳酸酯溶剂中,显色剂受到离子的盐效应影响,表现为溶液体系的ET(30)值增加,极性增大.由于溶液中粒子间的相互作用不同,环碳酸酯与链状碳酸酯极性变化趋势不同.极性大的溶剂易形成Ar-O-…solvent…Li+结构,起到缓冲作用,抑制了显色剂的酚氧基与Li+直接作用.     

含芯电子相关能修正的G2理论——G2(ful)

A general method in considering the core electronic correlation energies has been proposed and introduced into the standard Gaussian-2 (G2)[7] theory by small post-Hartree-Fock calculations. In this paper an additional MP2(FC)/6-31G(d) calculation over the G2 procedures is employed and examined in modification in modification to the flaw of Frozen-Core (FC) approximation of G2 vai eq.:
ΔE(full)= E[MP2(full)/6-31G(d)]-E[MP2(FC)/6-31G(d)]
where the MP2(full)/6-31G(d) energy has been obtained in the molecular geometry optimizations. This energy, ΔE(full), is directly added into the total G2 energy of a molecule in facilitating the effect of core electronic correlations for each molecule in chemical reactions. It has been shown that the over-all average absolute deviation for the 125 reaction energies of the G2 test set (test set 1) is slightly reduced from 5.09 to 5.01 kJ, mol(-1) while for the 55 D0 values, which have been used for the derivation of the A coefficient of the empirical High-Level...更多-Correction (HLC), it is also reduced from 4.99 [for both G2 and G2(COMPLETE)[8]]to 4.77 kJ• mol(-1). In addition, larger errors (greater than ±8.4 kJ•mol(-1) for the D0 energies are improved, especially for the largest error of the D0 of SO2 This error is reduced from 21.3 to 15.4 kJ. mol(-1), in which the experimental geometry would further reduce it by 7.1kJ.mol(-1)[8]. Another improvement is the absolute value of the A coefficient in HLC being reduced from 4.81 for G2 to 4.34 milli-hartrees which is believed to be useful in isolating the relationship between the HLC and the FC approximation. Modifications to the original G2 from this work is denoted as G2(fu 1) and thus the G2 (fu 1) total energy for a molecule is
E[G2(fu 1)]= E[G2]+Δ E(full)h
with a new ΔE[HLC] =-0.19α- 4.34nβ milli-hartree.     

某些离解能、电子亲合能等的G2计算与评价

PoPle及其合作者创立的Gaussian再简称GZ）理论［‘－’］，以其相对可靠的化学精度和相应较小的计算量已经引起了实验和理论化学家们的广泛关注问．p。ple等人在他们的GZ文章中强调了GZ的理论计算结果在研究离解能等化学问题中与精确实验数据之间的偏差普遍不大于全8．狄J规厂‘．我们近期的研究表明＊’1，＊2和优（＊则在计算一般化学反应能量中，绝大多数情况下，分别都能保证结果与实验偏差在全8．4和士13kJ·mol‘以内．近年来，已有大量的研究工作表明，GZ的理论结果已广泛用于未知实验数据的预测、已有实验数据的评价和修正等…     

Vibrational Spectroscopic Study on Ion Solvation and Association of Lithium Perchlorate in 4-Methoxymethyl-ethylene Carbonate

Solvation interaction and ion association in solutions of lithium perchlorate/4-methoxymethyl-ethylene carbonate （MEC） have been studied by using Infrared and Raman spectra as a function of concentration of lithium perchlorate. The splitting of ring deformation band and ring ether asymmetric stretching band, and the change of carbonyl stretching band suggest that there should be a strong interaction between Li^＋ and the solvent molecules, and the site of solvation should be the oxygen atom of carbonyl group. The apparent solvation number of Li^＋ was calculated by using band fitting technique. The solvation number was decreased from 3.3 to 1.1 with increasing the concentration of LiClO4/MEC solutions. On the other hand, the band fitting for the ClO4^- band revealed the presence of contact ion pair, and free ClO4^- anion in the concentrated solutions.     

氧化锡表面的原子簇模型计算

Cluster models of SnO2(110) face and oxygen vacancies and oxygen adsorption on its surface have been calculated by EHMO method. The results show that a tin atom with a coordination number of four is the adsorption center, because the total energy of cluster model becomes lower when an oxygen atom adsorpts on the tin atom with a coordination number of four. The tin atom with this coordination number gains and loses electrons more easily than tin atoms with a coordination number of five. All tin atoms in the cluster of SnO2(110) face are Sn4+.     

封装对大功率半导体激光器阵列热应力及Smile的影响

提出一种采用双铜-金刚石的"三明治"封装结构,利用有限元分析方法研究了其与传统的Cu+Cu W硬焊料封装结构激光器的热应力与Smile.对比模拟结果发现新封装结构热应力降低43.8%,Smile值增加95%.在次热沉热膨胀系数与芯片材料匹配的情况下,使用弹性模量更大的次热沉材料,可对芯片层热应力起到更好的缓冲作用.以硬焊料封装结构为例,分析了负极和次热沉厚度对器件Smile的影响.结果表明负极片厚度从50μm增加到300μm,器件工作结温降低2.26℃,Smile减小0.027μm,芯片的热应力增加22.95 MPa.当次热沉与热沉的厚度比小于29%时,Smile随次热沉厚度增加而增加;而当次热沉厚度超过临界点后,Smile随次热沉厚度增加而减小.当次热沉厚度达到临界点(2300μm)时,硬焊料封装的半导体激光器具有最大的Smile值3.876μm.制备了Cu W厚度分别为300μm和400μm的硬焊料封装976 nm激光器,并测量了其发光光谱.通过对比峰值波长漂移量,发现Cu W厚度增加了100μm,波长红移增加了1.25 nm,根据温度和应力对波长的影响率可知应力减小了18.05 MPa.测得两组器件的平均Smile值分别为0.904μm和1.292μm.实验证明增加Cu W厚度可减小芯片所受应力,增大Smile值.