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1.
两种方法制备ITO薄膜的红外特性分析   总被引:7,自引:1,他引:6  
比较了用电束加热蒸发法和直流磁控溅射法制备的氧化锡铟(ITO)薄膜在红外波段的光学特性实验发现,通过直流磁控溅射在常温下制备的ITO薄膜在红外波段折射率稳定、消光系数小,比电子束加热蒸发制备的膜有较高的透过率在波长1550nm附近的透过率可达86%以上,消光系数约为004,方电阻最低为100Ω/□.  相似文献   
2.
Transparent carbon nanotube coatings   总被引:1,自引:0,他引:1  
Thin networks of carbon nanotubes (CNTs) are sprayed onto glass or plastic substrates in order to obtain conductive transparent coatings. Transparency and conductivity at room temperature of different CNT material are evaluated. CNT coatings maintain their properties under mechanical stress, even after folding the substrate. At a transparency of 90% for visible light we observe a surface resistivity of 1 kΩ/sq which is already a promising value for various applications.  相似文献   
3.
Indium tin oxide (ITO) thin films were deposited by mid frequency pulsed dual magnetron sputtering using a metallic alloy target with 10 wt.% tin in an atmosphere of argon and oxygen. The aim of the work was to study the interdependence of structural, electrical and optical properties of ITO films deposited in the reactive and transition target mode, respectively. The deposition rate in the transition mode exceeds the deposition rate in the reactive mode by a factor of six, a maximum value of 100 nm·m min−1 could be achieved. This corresponds to a static deposition rate of 200 nm min−1. The lowest electrical resistivity of 1.1·10−3 Ω cm was measured at samples deposited in the high oxygen flow range in the transition mode. The samples show a good transparency in the visible range corresponding to extinction coefficients being below 10−2. X-ray diffraction was used to characterise crystalline structure as well as film stress. ITO films prepared in the transition mode show a slightly preferred orientation in (211) direction, whereas films deposited in the reactive mode are strongly (222) oriented. Compared to undoped In2O3 all samples have an enlarged lattice. The lattice strain perpendicular to the surface is about 0.8% and 2.0% for films grown in the transition and the reactive mode, respectively. Deposition in the transition mode introduces a biaxial film stress in the range of −300 MPa, while stress in reactive mode samples is −1500 MPa.  相似文献   
4.
IntroductionIndium-tin-oxide(ITO) has been widely used asthe anode material in organic light-emitting devices(OLEDs) because of its high transmittance in the visi-ble region and low electrical resistivity. In the pastyears, many investigations focused on …  相似文献   
5.
利用商品化ITO玻璃导电层的温阻效应, 无需任何微加工手段, 实现了自加热和传感的芯片温度自动程序控制, 最大程度地减小了传感滞后对温度控制稳定性的影响, 温度控制的稳定性达到了0.2 ℃, 升温速度最快可达20 ℃/s以上, 在冷却风扇辅助下降温速度最快达到了8 ℃/s. 芯片温控单元的引线从传统的两对(一对用于传感, 一对用于加热)减少为一对. 通过在该芯片上直接构建多个开放微池反应器的方法成功地实现了λDNA 157 bp片段的并行扩增. 将该芯片置于倒置荧光显微镜样品台上, 以蓝色(575 nm)发光二极管为光源, 以光电倍增管为检测手段检测了dsDNA和SYBR Green Ⅰ嵌合物的荧光强度随温度的实时变化曲线.  相似文献   
6.
A. Rostami  M. Noori  S. Matloub 《Optik》2013,124(24):6582-6585
In this paper, our main attempt was to reduce Total Internal Reflection (TIR) happening at Indium Tin Oxide (ITO, nito = 1.8 + 0.01i) and Glass (nglass = 1.51) interface, which is due to ITO's higher index in comparison with Glass's, that makes light guided in ITO layer, 50% of generated light in Wight Organic Light Emitting Diodes (WOLED) are trapped in ITO layer; here we tried to reduce this portion of trapped light by implying 12-fold quasi-photonic crystal to the mentioned interface. With some gentle changes in 12-fold's structure we could reduce TIR in this interface to less than 9%. Also, far field results before and after adding the structure to WOLED were studied, which represents suitability of using this structure for lighting applications.  相似文献   
7.
Two low‐band gap polymer series based on benzo[1,2‐b:4,5‐b′]dithiophene (BDT) and dithienylbenzothiadiazole, with different numbers of fluorine substituents on the 2,3,1‐benzothiadiazole unit, have been synthesized and explored in a comparative study of the photochemical stability and operational lifetime in flexible large area roll‐coated bulk heterojunction solar cells. The two polymer series have different side chains on the BDT unit, namely 2‐hexyldecyloxy (BDTHDO) ( P1–P3 ) or 2‐hexyldecylthiophene (BDTTHD) ( P4–P6 ). The photochemical stability clearly shows that the stability enhances along with the number of fluorine atoms incorporated on the polymer backbone. Fabrication of the polymer solar cells based on the materials was carried out in ambient atmosphere on a roll coating/printing machine employing flexible and indium‐tin‐oxide‐free plastic substrates. Solar cells based on the P4–P6 series showed the best performance, reaching efficiencies up to 3.8% for an active area of 1 cm2, due to an enhanced current compared to P1–P3 . Lifetime measurements, carried out according to international summit on OPV stability (ISOS), of encapsulated devices reveals an initial fast decay for P1–P6 in the performance followed by a much slower decay rate, still retaining 40–55% of their initial performance after 250 h of testing under ISOS‐L‐1 conditions. © 2014 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2014 , 52, 893–899  相似文献   
8.
Here, we reported on a one‐step fabrication of magnetite Fe3O4 nanoparticles/indium tin oxide (ITO) electrode based on the direct growing of Fe3O4 nanoparticles on the ITO surface by using a solvothermal process. The modified electrode was used as electrochemical methotrexate (MTX) biosensor with high sensitivity based on cyclic voltammetry and square wave voltammetry techniques. The results demonstrated a linear relationship between the MTX concentration and its oxidation current peak over a wide range from 10?5 to 10?14 mole/L with a limit of detection of 0.4×10?15 M based on the square wave voltammetry (SWV) technique. In addition, Fe3O4/ITO electrode showed a good capability for measuring very low concentrations of MTX drug dissolved in human serum solution. Also, Fe3O4/ITO electrode was used for detecting MTX in blood serum samples collected from patients after their treatment with MTX. The prepared electrode showed the higher sensitivity that higher than the Viva‐E instrument, which opens the door for developing a cheap, simple and higher sensitive MTX sensor.  相似文献   
9.
以乙二醇、乙醇为溶剂通过溶剂热法制备出立方状ITO纳米粉体,研究了反应时间、NaOH浓度对ITO纳米粉体形貌的影响,并讨论了溶剂体积比、NaOH浓度对ITO粉体导电性的影响及机理。结果表明:采用乙二醇与乙醇做溶剂,VEGVEtOH=4:1时,制备出分散性良好的立方状ITO纳米粉体,平均粒径为10.7 nm,且其XRD衍射峰强度比I400/I222最高为0.380;乙二醇与乙醇做溶剂,VEGVEtOH=4:1,且NaOH浓度为0.275 mol·L-1时,粉体电导率最高为46.75 mS·cm-1。  相似文献   
10.
Sn doped In2O3 films are deposited by rf-magnetron sputtering at 300 °C under Ar, Ar + O2 and Ar + H2 gas ambients. For the film prepared under argon ambient, electrical resistivity 6.5 × 10−4 Ω cm and 95% optical transmission in the visible region have been achieved optimizing the power and chamber pressure during the film deposition. X-ray diffraction spectra of the ITO film reveal (2 2 2) and (4 0 0) crystallographic planes of In2O3. With the introduction of 1.33% oxygen in argon, (2 2 2) peak of In2O3 decreases and resistivity increases for the deposited film. With further increase of oxygen in the sputtering gas mixture crystallinity in the film deteriorates and both the peaks disappeared. On the other hand, when 1.33% hydrogen is mixed with argon, the resistivity of the deposited film decreases to 5.5 × 10−4 Ω cm and the crystallinity remains almost unchanged. In case of reactive sputtering, the deposition rate is lower compared to that in case of non-reactive sputtering. HRTEM and first Fourier patterns show the highly crystalline structure of the samples deposited under Ar and Ar + H2 ambients. Crystallinity of the film becomes lower with the introduction of oxygen in argon but refractive index increases from 1.86 to 1.9. The surface morphology of the ITO films have been studied by high resolution scanning electron microscopy.  相似文献   
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