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膨胀型类磷酸酯蜜胺盐阻燃剂的合成及应用研究 总被引:11,自引:0,他引:11
以双季戊四醇(DPE)、五氧化二磷、水和三聚氰胺为原料,合成了膨胀型环状类磷酸酯蜜胺盐阻燃剂。通过实验提出了合成该阻燃剂的最佳反应条件为:双季戊四醇(DPE)、五氧化二磷、水和三聚氰胺反应物料摩尔配比为1/2.5/2.0/3.45、反应时间4h和反应温度120℃。红外吸收图谱分析表明该阻燃剂具有环状结构,在热重分析和差热分析中该阻燃剂显示出优异的热稳定性和很高的成碳性。以该阻燃剂掺入聚丙烯中,阻燃效果显著,经测试阻燃聚丙烯的极限氧指数(LOI)为33.6,烟密度等级(SDR)为44.25,通过了UL94V-0级。 相似文献
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Amorphous SiOx nanotubes with homogeneous diameters were fabricated in large-scale on silicon substrate by thermal evaporation method, with liquid gallium as medium. The average diameter of tubes is about 80 nm and the length is more than 10 1m, with small ratio between the inner and outer diameter of the tube. The silicon element in the substrate and the residual oxygen element in reaction chamber were first dissolved into liquid Ga. Then the SiOx precipitated from the surface of gallium droplet, forming the nanotube structure with Ga droplet being the center. The room temperature photoluminescence measurements under excitation at 260 nm show that the SiOx nanotubes has a strong blue emission at 453 nm with two shoulders at 410 and 480 nm respectively, which may be related to oxygen defects. The preparation method improved the traditional complicated method and also provided a new way to fabricate SiOx nanotubes in large quantity. 相似文献
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令X为一个紧致度量空间,fX→X为(拓扑)传递的映射.通过对传递系统(X,f)在fn,n∈N的作用下的伪分解,先引入一个新的拓扑不变量"传递系统的PD函数(伪分解函数)".然后,讨论关于此不变量的一些重要性质.最后,把关于周期轨道的Sharkovskii定理推广到传递子系统上. 相似文献
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数字图像相关中散斑质量评价标准应该综合考虑系统误差和随机误差的作用。之前的工作考虑了无图像噪声情况下插值引起的系统误差,本文则进一步研究了有图像噪声情况的系统误差,并与随机误差综合考虑提出了完善的散斑质量评价参数。本文推导了有噪声情况下系统误差的解析形式,揭示了噪声引入系统误差产生的内在本质在于插值引起噪声不确定性对亚像素位置的依赖。依据理论分析,插值噪声耦合函数的概念被引入,它由插值基函数平移平方和的斜率决定,表征了噪声引入系统误差随亚像素位置的变化。插值耦合函数将之前的研究成果纳入统一的理论体系,并从本质上解释了高阶B-样条插值对应的噪声引起系统误差较小的现象。数值模拟与本文的理论分析显示一致,在真实的亚像素平移实验验证中,本文将公式推广到非均匀噪声情况,并与实验结果获得了较好的吻合。基于对系统误差的理论分析,综合考虑系统误差和随机误差影响,提出了两种计算误差评估参数:总误差的最大值和平方平均值,并提出了快速估计算法且通过数值模拟进行了验证。计算误差评估参数实际也是一种散斑质量评价参数,提出的评估参数弥补了现存散斑质量评价参数未足够考虑插值影响的缺陷,是更完善的散斑质量评价标准。本文应用新提出的散斑评价参数对一些常见散斑图进行了评价,并将其用于对模拟散斑图的优化。 相似文献
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讨论伪统一模与剩余格之间的关系,证明完备格上无穷∨-分配伪统一模和它的剩余蕴涵算子构成一个完备剩余格,并说明任给一个完备剩余格L=(L,∧,∨,*,e→,,*是无穷∨-分配的伪统一模,→和(?)是*的剩余蕴涵算子. 相似文献
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Fabrication and Characteristics of Nano-Floating Gate Memories with ZnO Nano-Crystals as Charge-Storage Layer 下载免费PDF全文
Nano-floating gate memory devices with ZnO nano-crystals as charge storage layers are fabricated,and the influence of post-deposition annealing temperature and thickness of the ZnO layer are investigated.Atomic force microscopy and scanning electron microscopy reveal the morphology of discrete ZnO nano-crystals.For capacitance-voltage measurements,it is found that the memory device with 1.5 nm ZnO and annealed at 700℃shows a larger memory window of 4.3 V(at±6 V)and better retention characteristics than memoriy devices with2.5 nm ZnO or annealed at other temperatures.These results indicate that the nano-floating gate memory with ZnO nano-crystals can obtain good trade-off memory properties. 相似文献
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建立了一种毛细管电泳测定蛋白质分子表面自由氨基的方法. 配制蛋白质样品溶液, 分取5等份, 分别加入过量的不同摩尔数的芴甲氧羰酰琥珀酰亚胺(FMOC-OSu)溶液, 室温下反应30 min后, 用胶束电动色谱测定蛋白质溶液中剩余的FMOC-OSu的峰面积. 以FMOC-OSu的峰面积对加入的FMOC-OSu的摩尔数做校准曲线. 该直线外推到峰面积为0时所对应的FMOC-OSu摩尔数即为参加反应的蛋白质表面的氨基的摩尔数. 因此可以计算出蛋白质表面的氨基数目. 用甘氨酸检验了本方法的可靠性. 以牛血清白蛋白为蛋白质模型, 测得其表面氨基数为32, 和文献报道值一致. 该方法简单易行并且反应条件温和, 可用于测定蛋白质修饰过程中的平均修饰度 相似文献
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Improvements of Interfacial and Electrical Properties for Ge MOS Capacitor with LaTaON Gate Dielectric by Optimizing Ta Content 下载免费PDF全文
The interfacial and electrical properties of high-k LaTaON gate dielectric Ge metal-oxide-semiconductor(MOS)capacitors with different tantalum(Ta) contents are investigated. Experimental results show that the Ge MOS capacitors with a Ta content of ~30% exhibit the best interfacial and electrical properties, including low interfacestate density(7.6 × 10~(11) cm~(-2) eV~(-1)), small gate-leakage current(8.32 × 10~(-5) A/cm~2) and large equivalent permittivity(22.46). The x-ray photoelectron spectroscopy results confirm that the least GeO_x is formed at the Ge surface for the sample with a Ta content of ~30% due to the effective blocking role of Ta against O diffusion and the greatly improved hygroscopicity of LaON. 相似文献