富勒烯衍生物C50X(X=SiH2, PH, S)的结构及稳定性的理论研究

用从头算HF/3-21G方法研究了C50的环加成衍生物C50X(X=SiH2, PH, S)所有可能的异构体的结构与稳定性, 计算结果表明, SiH2基团、PH基团与S原子在C50上环加成的优先加成位置相同, 都为C3—C4类键和C4—C4类键, 并且相应形成[5,6]-闭环和[5,5]-闭环结构的最稳定异构体; 决定C50X(X=SiH2, PH, S)各异构体稳定性的主要因素, 因加成位置以及发生加成反应的C—C键的单双键类型的不同, 可能是张力、共轭效应或者二者的共同作用. 进一步比较了C50X(X=SiH2, PH, S)与C50X(X=CH2, NH, O)的结构和稳定性等, 并总结出规律性的结论, 即加成原子的大小和加成位置C—C键的类型是影响形成开环或闭环结构的C50环加成衍生物的两种主要因素.     

C56X10(X=F,Cl, Br,I)的结构稳定性和电子性质

采用密度泛函理论(DFT)中的广义梯度近似(GGA)方法对C56X10(X=F, Cl, Br, I)的结构稳定性和电子性质进行了计算研究. 结构稳定性计算表明: 对于C56X10(X=F, Cl, Br, I), 能隙、反应热、最大振动频率和最小振动频率都随着X原子序数的增加而减小, 表明C56X10(X=F, Cl, Br, I)的稳定性随着X原子序数的增加而逐渐降低, 其中C56F10最为稳定. 前人在实验上已成功合成出C56Cl10, 因此, 我们推测C56F10有望在实验上成功合成. 前线轨道计算发现, C56相邻的五边形公共顶点以及两个六边形-五边形-六边形公共顶点是笼子中化学活性最强的部位, 有利于卤族元素的外部吸附. 此外, 计算结果还显示, C56X10(X=F, Cl, Br, I)的电负性随着X原子序数的增大而逐渐减弱, C—X基团的电负性因位置的不同而不同.     

杂硼原子簇XB6+ (X=C,Si, Ge,Sn, Pb)的稳定性和芳香性

利用从头算MP2方法和密度泛函理论B3LYP和B3PW91方法, 研究了杂硼原子簇XB₆⁺ (X=C, Si, Ge, Sn, Pb)的结构、稳定性及化学键合情况. 对C, Si, Ge, B使用6-311+G(d)基组, 对Sn和Pb使用LANL2DZ赝势基组. 研究结果表明, 具有C_s对称性的假平面XB₆⁺ (X=C, Si, Ge, Sn, Pb)结构是势能面上的全域极小点, 其稳定性要高于C_6v对称性的锥形结构和C₂对称性的假锥形结构. 在B3LYP水平上, 对这些异构体的势能面的极小点进行了自然键轨道(NBO)的分析; 对最稳定构型的最高占据分子轨道(HOMO)和最低空轨道(LUMO)能级差、分子轨道(MO)和核独立化学位移(NICS)进行了计算和讨论. 分析了杂原子和硼原子间、相邻硼原子间的键合情况, 讨论了最稳定构型的芳香性质.     

Theoretical studies on fullerene C4o′s derivatives C4o X2 (X =H, F, Cl, Br)

应用密度泛函理论在B3LYP/6 31G*水平上对C40X2 (X=H,F,Cl,Br)进行研究.研究结果表明,C40X2 (X=H,F,C1,Br)在热力学上是稳定的,卤化衍生物的稳定性随卤素原子序数的增大而降低,最有利的衍生化方式是1-4加成,1-2与1-4加成的卤化和氢化衍生物在所研究的分子中较为稳定.这些研究有助于理解富勒烯衍生物的衍生化模式.     

PuX~ (X=H,O,N,C)的结构与势能函数

用密度泛函B3LYP方法对PuX＋(X=H,O,N,C)分子离子体系进行了理论研究.结果表明,这些分子离子的基态电子状态分别是X 7Σ－(PuH＋)、X 6Σ－(PuO＋)、X 5Σ＋(PuN＋)和X 8Σ－(PuC＋);势能函数为Murrell-Sorbie势函数.并得到了相应的几何性质、力学性质和光谱数据.     

PuX＋(X=H,O,N,C)的结构与势能函数

用密度泛函B3LYP方法对PuX＋(X=H,O,N,C)分子离子体系进行了理论研究.结果表 明,这些分子离子的基态电子状态分别是X 7Σ-(PuH＋)、X 6Σ-(PuO＋)、X 5Σ＋(P uN＋)和X 8Σ-(PuC＋);势能函数为Murrell-Sorbie势函数.并得到了相应的几何性质、 力学性质和光谱数据.     

C_(56)X_(10)(X=F,Cl,Br,I)的结构稳定性和电子性质

采用密度泛函理论(DFT)中的广义梯度近似(GGA)方法对C56X10(X=F,Cl,Br,I)的结构稳定性和电子性质进行了计算研究.结构稳定性计算表明:对于C56X10(X=F,Cl,Br,I),能隙、反应热、最大振动频率和最小振动频率都随着X原子序数的增加而减小,表明C56X10(X=F,Cl,Br,I)的稳定性随着X原子序数的增加而逐渐降低,其中C56F10最为稳定.前人在实验上已成功合成出C56Cl10,因此,我们推测C56F10有望在实验上成功合成.前线轨道计算发现,C56相邻的五边形公共顶点以及两个六边形-五边形-六边形公共顶点是笼子中化学活性最强的部位,有利于卤族元素的外部吸附.此外,计算结果还显示,C56X10(X=F,Cl,Br,I)的电负性随着X原子序数的增大而逐渐减弱,C—X基团的电负性因位置的不同而不同.     

Cs2CO3辅助钯催化X—H (X=C、O、N、B)官能团化反应的理论计算研究

钯催化X—H (X=C、O、N、B)官能团化反应是重要的有机合成策略,能以芳基卤化物、烯类或炔类等小分子化合物为底物,以原子经济的方式构建C—C和C—X (X=O、N、B)键。其中,Cs₂CO₃辅助钯催化X—H (X=C、O、N、B)官能团化反应因具有反应性好、产率高、底物适用范围广等优点,成为近年来有机合成领域的关注热点之一,在构建含C—C和C—X键的多环天然产物骨架方面起着重要作用。采用DFT理论研究Cs₂CO₃辅助钯催化X—H (X=C、O、N、B)官能团化反应,能帮助人们从微观层面了解该类反应的实质,进而为设计新的实验合成路线提供启示。本文对近十年来Cs₂CO₃辅助钯催化X—H (X=C、O、N、B)官能团化反应的最新理论研究进展进行分类和总结,对反应的微观机理以及Cs₂CO₃在反应中的作用机制进行了深入探讨,并对该领域的现存问题和发展前景进行了总结与展望。     

ZH3,ZH+4及ZH4X(Z=N,P,As,Sb,Bi,X=F,Cl,Br,I)的结构与电子性质质

采用MP2/def2-TZVP理论方法考察了ZH3,ZH+4及ZH4X(Z=N,P,As,Sb,Bi,X=F, Cl, Br, I)的结构与电子性质。结果表明,随着氮族元素原子序数的递增,其氢化物(ZH3)中心原子杂化轨道中s成分减小,p成分逐渐增大,杂化轨道偏离平面的程度依次增大,导致NH3空间构型的最为“平面”,而BiH3最为“锥形”。尽管阳离子ZH+4由ZH3中Z的一个不等性sp3杂化轨道提供孤对电子与H+形成,但ZH+4中4个Z-H键等价,Z总体呈现等性sp3杂化。ZH4X均为C3v对称的四面体结构,ZH3与HX之间的作用驱动力来源于离子型的氢键(H3Z…H*-X)而非ZH+4与X－阴阳离子对(ZH+4X－)间的静电作用,H3Z…H*-X内的电子转移主要发生在轨道LP1(Z)与σ*(H*-X)之间。     

C36X(X=O,NH,S)各种可能异构体的芳香性研究

采用拓扑共振能方法对富勒烯C36X(X=O,NH,S)开环结构中的所有可能的异构体及阳离子和阴离子芳香性进行了理论研究. 计算结果表明,C36X的芳香性高于C36. C36X的阳离子因其共振能为负值而具有反芳香性. 反之,C36X的阴离子因共振能为正值而具有芳香性和较高的稳定性. C36的D6h和D2d异构体中杂原子X插入在5-5键时得到的化合物最稳定. 从理论上预测了C36X的负离子能形成稳定的金属富勒烯. 对C36X的阳离子和阴离子的芳香性进行了解释.     

Theoretical Study on the Structure and Stability of Si5X （X = Li, Be, B, C, N, O, F, Na, Mg, Al, Si, P, S, Cl） Clusters

1 INTRODUCTION In the later 60s of last century, silicon substituted for germanium to present as mainstream in semicon- ductor. The semi-conductive devices made by silicon have many advantages, for example, refractory pro- perty, high radioresistance, simple and stable process- ing technic, high machinability and low cost. So it was widely used to manufacture large power appara- tuses, for instance, digit and linear integrated circuit, large scale integrated circuit (LSI), etc. Thus, th…     

Theoretical Study on the Structure and Stability of Si4X（X=Li, Be, B, C, N, O, F） Clusters

1 INTRODUCTION Silicon is an important kind of semiconductormaterial having been used to produce many sorts ofapparatus, digital and linear integrated circuit andLarge Scale Integrated circuit (LSI), and its clustershave drawn many scientists’ atten…     

Hydrogen bridging in the compounds X2H (X=Al,Si,P,S)

X2H hydrides (X=Al, Si, P, and S) have been investigated using coupled cluster theory with single, double, and triple excitations, the latter incorporated as a perturbative correction [CCSD(T)]. These were performed utilizing a series of correlation-consistent basis sets augmented with diffuse functions (aug-cc-pVXZ, X=D, T, and Q). Al2H and Si2H are determined to have H-bridged C2v structures in their ground states: the Al2H ground state is of 2B1 symmetry with an Al-H-Al angle of 87.6 degrees, and the Si2H ground state is of 2A1 symmetry with a Si-H-Si angle of 79.8 degrees. However, P2H and S2H have nonbridged, bent Cs structures: the P2H ground state is of 2A' symmetry with a P-P-H angle of 97.0 degrees, and the S2H ground state is of 2A' symmetry with a S-S-H angle of 93.2 degrees. Ground state geometries, vibrational frequencies, and electron affinities have been computed at all levels of theory. Our CCSD(T)/aug-cc-pVQZ adiabatic electron affinity of 2.34 eV for the Si2H radical is in excellent agreement with the photoelectron spectroscopy experiments of Xu et al. [J. Chem. Phys. 108, 7645 (1998)], where the electron affinity was determined to be 2.31+/-0.01 eV.     

Structural and electronic properties of Al12X+ (X=C, Si, Ge, Sn, and Pb) clusters

Using the first-principles method with the generalized gradient approximation, the authors have studied the structural and electronic properties of Al(12)X(+) (X=C, Si, Ge, Sn, and Pb) clusters in detail. The ground state of Al(12)C(+) is a low symmetry C(s) structure instead of an icosahedron. However, the Si, Ge, Sn, and Pb atom doped cationic clusters favor icosahedral structures. The ground states for Al(12)Si(+) and Al(12)Ge(+) are icosahedra, while the C(5nu) structures optimized from an icosahedron with a vertex capped by a tetravalent atom have the highest binding energy for Al(12)Sn(+) and Al(12)Pb(+) clusters. The I(h) structure and the C(5nu) structure are almost degenerate for Al(12)Ge(+), whose binding energy difference is only 0.03 eV. The electronic properties are altered much by removing an electron from the neutral cluster. The binding strength of a valence electron is enhanced, while the binding energy of the cluster is reduced much. Due to the open electronic shell, the band gaps between the highest occupied molecular orbital and the lowest unoccupied molecular orbital are approximately 0.3 eV for the studied cationic clusters.     

Geometries,vibrational frequencies,and electron affinities of X2Cl (X=C,Si,Ge) clusters

Ab initio quantum chemical calculations have been performed on X₂Cl^? and X₂Cl (X = C, Si, Ge) clusters. The geometrical structures, vibrational frequencies, electronic properties and dissociation energies are investigated at the Hartree–Fock (HF), Møller–Plesset second‐ and fourth‐order (MP2, MP4), CCSD(T) level with the 6‐311+G(d) basis set. The X₂Cl (X = C, Si, Ge) and X₂Cl^? (X = Si, Ge) take a bent shape obtained at the ground state, while C₂Cl^? has a linear structure. The impact on internal electron transfer between the X₂Cl and the corresponding anional clusters is studied. The three different types of electron affinities (EAs) at the CCSD(T) are reported. The most reliable adiabatic electronic affinities, obtained at the CCSD(T)/cc‐pvqz level of theory, are predicted to be 3.30, 2.62, and 1.98 eV for C₂Cl, Si₂Cl, and Ge₂Cl, respectively. The calculated EAs of C₂Cl and Ge₂Cl are in good agreement with theoretical results reported. The correlation effects and basis sets effects on the geometrical structures and dissociation energies are discussed. © 2006 Wiley Periodicals, Inc. Int J Quantum Chem, 2007     

Gas-phase diastereoselectivity of secondary 5-substituted (X)-adamant-2-yl (X = F, Si(CH(3))(3)) cations

Secondary 5-X-adamant-2-yl cations IX (X = F, Si(CH3)3) have been generated in the gas phase (total pressure = 760 Torr) from protonation-induced defluorination of epimeric 2-F-5-X-adamantanes 1X and their kinetic diastereoselectivity toward CH318OH investigated in the 40-160 degrees C range. The experimental results indicate that the facial selectivity of IX is insensitive to the composition of the starting 1X epimers as well as to the presence and the concentration of a powerful base (N(C2H5)3). This kinetic picture, supported by B3LYP/6-31G* calculations, is consistent with a single stable pyramidalized structure for IX, that is, (Z)-5-F-adamant-2-yl (I(Z)F) and (E)-5-Si(CH3)3-adamant-2-yl cations (I(E)Si). The temperature dependence of the IX diastereoselectivity lends support to the intermediacy of noncovalent adducts [IX*CH318OH], characterized by a specific C2-H+...O18(H)CH3 hydrogen bonding interaction. Their conversion to the covalently bonded O-methylated (Z)- (II(Z)X) and (E)-5-X-adamantan-2-ols (II(E)X; X = F, Si(CH3)3) is governed by activation parameters, whose magnitude depends on the specific IX face accommodating CH318OH. The gas-phase diastereoselectivity of IX toward CH318OH is compared to that exhibited in related gas-phase and solution processes. The emerging picture indicates that the factors determining the diastereoselectivity of IX toward simple nucleophiles in the gaseous and condensed media are completely different.     

Structures and Aromaticity of Three-membered BeXP （X = C,Si, Ge） and CYP （Y = O,S, Se） Rings

Three-membered BeXP （X = C, Si, Ge） and CYP （Y = O, S, Se） rings are theoretically investigated using density functional theory （DFT） methods at the B3LYP/6-311＋G^＊ and B3PW91/6-311＋G^＊ levels of theory. The research results show that the size of atoms has a great influence on the structural stability of these species. The wiberg bond indexs （WBIs） suggest the existence of delocalization in these structures. Negative nucleus-independent chemical shift （NICS） values for these species indicate that a strong ring current exists in these three-membered structures （Cs symmetry）. A detailed molecular orbital （MO） analysis further reveals that a delocalized π MO strengthens the structural stability and makes these species show strong aromatic characters.     

Mechanism of abstraction reactions of dimetallenes (R2X=XR2; X = C, Si, Ge, Sn, Pb) with halocarbons: a theoretical study

Potential energy surfaces for the abstraction reactions of dimetallenes with halocarbons have been studied using density functional theory (B3LYP). Five dimetallene species, (SiH(3))(2)X=X(SiH(3))(2), where X = C, Si, Ge, Sn, and Pb, have been chosen in this work as model reactants. The present theoretical investigations suggest that the relative dimetallenic reactivity increases in the order C=C < Si=Si < Ge=Ge < Sn=Sn < Pb=Pb. That is to say, for halocarbon abstractions there is a very clear trend toward lower activation barriers and more exothermic reactions on going from C to Pb. Moreover, for a given dimetallene, the overall barrier heights are determined to be in the order CF(4) > CCl(4) > CBr(4) > CI(4). That is, the heavier the halogen atom (Y), the more facile its abstraction from CY(4). Halogen abstraction is always predicted to be much faster than the abstraction of a CY(3) group irrespective of the dimetallene or halocarbon involved. Our model conclusions are consistent with some available experimental findings. Furthermore, both a configuration mixing model based on the work of Pross and Shaik and bonding dissociation energies can be used to rationalize the computational results. These results allow a number of predictions to be made.     

Etude structurale de composes organosilicies par diffusion rayleigh depolarisee: VI. Effets electroniques dans les systemes Cz.dbnd;CSi,PhSi,SiCC, SiNSi Et Si3N

Depolarised Rayleigh scattering is sensitive to conjugated electronic effects. The proper effect of silicon bonded to an sp² carbon atom in Me₃SiPh and Me₃SiCHCHΣ (Σ = H, Me, t-Bu, SiMe₃) has been illustrated by comparison of the systems containing a C_sp²M bond with the corresponding systems containing a C_sp³M bond for M = C, Si. To be able to make this comparison it was necessary to study the additivity of the bond and group optical anisotropies in alkenes with Me, CMe₃, SiMe₃ groups by means of a more approximate model assuming axial symmetry for the CC bond but of more convenient and more general use than a more realistic model without axial symmetry. Contrary to the NSi (from monosilylamines), SiOC and SiOSi systems, silicon adjacent to an unsaturated system, causes an exaltation of the optical anisotropy which mainly results from increase of the longitudinal optical polarisability. This exaltation is consistent with electron delocalisation in an orbital obviously longer than the basic π orbital. Such an effect seems strengthened in (Me₃Si)₂NΣ if the donating ability of Σ increases, Σ = H, Me, t-Bu. For Me₃SiCHCHSiMe₃ and if the molecules Me₃SiNHΣ¹ (Σ¹ = Me, t-Bu), (Me₃Si)₂NH and (Me₃Si)₃N are compared, a compensation is observed between the effect of the new lengthening of the π orbital and the π electronic density fall by CSi or NSi bonds.