自发团聚诱导高比例立方氮化硼微晶的水热合成

利用水热法合成了立方氮化硼（cBN）. 通常水热法制备的氮化硼样品是立方氮化硼（cBN）和六方氮化硼（hBN）及其它晶相的混合物,这限制了该方法的应用前景. 文中利用立方氮化硼在特定反应条件下的自发团聚现象,成功地发展了一种使混合物中的立方氮化硼在反应过程中自发纯化的新方法. 提高原料浓度和反应温度,有利于获得更大粒径的立方氮化硼和尺寸分布更均匀的团聚颗粒,提高搅拌转速来改善溶液的均匀性也有同样效果;而提高反应压力则会导致相反的结果. 文中也探讨了自团聚现象在生长大尺寸立方氮化硼晶体以及非均相合成中的潜在应用价值.     

水热法合成立方氮化硼微晶

低温低压条件下, 在水溶液中利用反应耦合效应成功地合成了立方氮化硼微晶. 利用X射线衍射(XRD), 傅里叶红外吸收(FTIR)测试确定了产物的物相组成, 根据透射电镜(TEM)和选区电子衍射(SAED)的测试结果分析产物的形貌和表面特征, 高分辨电镜(HRTEM)和X射线能谱仪(XPS)测试结果证明了立方氮化硼的存在.     

高温高压Li3N-hBN体系cBN转变的热力学分析

以经典热力学第二定律ΔG<0为依据,分析了静态高温高压触媒法合成立方氮化硼(cBN)过程中发生的可能反应.考虑温度和压强对反应物相体积的影响,计算了六方氮化硼(Li3N-hBN)体系中hBN+Li3N→Li3BN2,h BN→cBN及Li3BN2→Li3N+cBN反应在高温高压条件下的ΔG.结果证实,Li3BN2由Li3N与hBN在高温高压(T>1300 K,P>3.0 GPa)条件下反应得到,在cBN的合成(T=1600～1800 K,P=4.6～6.0 GPa)条件下,hBN和Li3BN2都有向cBN转化的倾向,但由hBN向cBN直接转变的反应自由能比Li3BN2分解生成cBN的反应自由能更负,反应的可能性更大.探讨了高温高压条件下立方氮化硼的转变机理。     

利用水热合成方法制备正交氮化硼微晶

利用水热方法制备了正交氮化硼微晶, 于400 ℃时制备的氮化硼结晶质量较高, 主要物相为正交氮化硼(oBN). 在反应原料中加入水合肼和氯化铵都有利于样品结晶质量的改善和产率的提高. 在合成氮化硼反应过程中, 适当减慢反应体系的升温速率有利于提高oBN的结晶质量和产率, 但是当升温速率过慢时, oBN的稳定性有所降低, 立方氮化硼(cBN)的稳定性则在一定程度上得到提高. 此外, 反应过程中的原料配比对样品的物相及其结晶质量也有很大影响.     

纳米氮化硼在吡啶热条件下的物相转变规律

为了研究纳米氮化硼在溶剂热条件下的物相转变规律, 利用三氯化硼(BCl3)和氮化锂(Li3N)为原料, 吡啶作为溶剂合成了纳米氮化硼. 在实验过程中, 系统研究了反应温度、压力以及反应时间的影响, 发现在吡啶热反应体系中, 首先形成的是结构无序的无定形纳米氮化硼(aBN). 随着反应温度和压力的提高以及时间的延长, 纳米氮化硼中的原子排列有序度不断提高, 逐渐出现了结构部分有序的湍层氮化硼(tBN)和结构有序的六方氮化硼(hBN). 在反应温度和压力提高时, 样品中首先是tBN的含量提高, 然后是hBN的含量明显增加, 说明在合成反应过程中存在aBN→tBN→hBN的物相转变.     

纳米硫化镉的合成及其电化学催化性能测试

采用CS2-SDS-正辛醇-水微乳体系制备了硫化镉纳米棒。利用XRD、SEM、TEM对产物进行表征，测试了其对多硫化物电极还原反应的催化性能，并与常规方法合成的大粒度CdS晶体进行对比．结果表明，纳米棒为六方型CdS晶体，直径约12nm．常规法合成的CdS为立方型晶体，平均粒度约为1μm．CdS纳米棒电极对硫化钠／多硫化钠电极反应的电催化活性明显高于大粒度CdS晶体电极．     

单分散钛酸锶纳米晶体的形成机理

采用水热法,利用乙醇和水的混合溶剂合成了单分散钛酸锶纳米晶体。X射线衍射(XRD)结果显示该晶体为立方相,延长反应时间其结晶性增强。扫描电子显微镜(SEM)、透射电子显微镜(TEM)结果显示样品为70nm左右的均匀立方块晶体。利用SEM、TEM、高分辨透射电子显微镜(HRTEM)和电子衍射(ED)谱研究了该纳米晶体的生长过程,结果表明:前驱体经过扩散反应生成钛酸锶晶核,晶核之间由于定向生长作用而团聚连接形成颗粒球,最后颗粒球在缓慢的奥斯特瓦尔德熟化作用下转化为钛酸锶晶体。这一“扩散反应、定向生长、奥斯特瓦尔德熟化”的生长过程揭示了钛酸锶纳米晶体的生长机理。利用Johnson-Mehl-Avrami(JMA)方程模拟证实了其初始阶段的扩散反应机理,并得出反应活化能为15.79kJ·mol^-1。     

等离子化学气相沉积硅-硼-氮复合薄膜的组成和结构

利用X射线衍射（XRD）和X光电子能谱（XPS）等技术对射频－直流－等离子化学气相沉积（RF－DC－PVCD）在钢基本上Si-B-N复合薄膜的组成和结构进行分析和研究；结果表明，通过给试样基体加一适当的直流负偏压，得到含有显著六方氮化硼（h-BN)，立方氮化硼（c-BN)结晶相的Si-B-N薄膜。     

单分散钛酸锶纳米晶体的形成机理

采用水热法,利用乙醇和水的混合溶剂合成了单分散钛酸锶纳米晶体.X射线衍射(XRD)结果显示该晶体为立方相,延长反应时间其结晶性增强.扫描电子显微镜(SEM)、透射电子显微镜(TEM)结果显示样品为70 nm左右的均匀立方块晶体.利用SEM、TEM、高分辨透射电子显微镜(HRTEM)和电子衍射(ED)谱研究了该纳米晶体的生长过程,结果表明：前驱体经过扩散反应生成钛酸锶晶核,晶核之间由于定向生长作用而团聚连接形成颗粒球,最后颗粒球在缓慢的奥斯特瓦尔德熟化作用下转化为钛酸锶晶体.这一“扩散反应定向生长奥斯特瓦尔德熟化”的生长过程揭示了钛酸锶纳米晶体的生长机理.利用Johnson-Mehl-Avrami(JMA)方程模拟证实了其初始阶段的扩散反应机理,并得出反应活化能为15.79 kJ·mol^-1.     

甲醇水相重整制氢原位还原苯乙酮制备α-苯乙醇

在液相状态下,吸热的甲醇水相重整制氢反应和放热的苯乙酮液相加氢反应可使用相同类型的催化剂,并在相近的反应温度和压力条件下进行.据此,提出利用甲醇水相重整制氢原位还原苯乙酮制备α-苯乙醇,将两个反应偶合形成一种新的苯乙酮加氢还原方法,即苯乙酮液相原位加氢还原法.通过这种偶合,在Raney Ni催化剂作用下实现了羰基的高选择性还原(α-苯乙醇选择性可达95%),同时水相重整过程中甲醇的转化率和氢的选择性也得到明显提高.实验结果表明,反应条件是影响苯乙酮原位加氢反应性能的重要因素;优化反应的温度、压力、苯乙酮浓度和原料配比可以提高甲醇水相重整制氢选择性和羰基加氢选择性.     

Prediction of formation of cubic boron nitride by construction of temperature-pressure phase diagram at the nanoscale

The size-dependent phase diagram of BN was developed on the basis of the nanothermodynamic theory. Our studied results suggest that cubic BN (c-BN) is more stable than hexagonal BN (h-BN) in the deep nanometer scale and the triple point of c-BN, h-BN and liquid shifts toward the lower temperature and pressure with decreasing the crystal size. Moreover, surface stress, which is determined by the experimental conditions, is the main reason to influence the formation of c-BN nuclei. The developed phase diagram of BN could help us to exploit new techniques for the fabrication of c-BN nanomaterials.     

Boron nitride synthesized at ambient pressure and room temperature by plasma electrolysis

A mixture of cubic boron nitride (c-BN) and extra-diamond boron nitride (E-BN) has been synthesized at ambient pressure and room temperature by plasma electrolysis. The formation of c-BN was characterized by FTIR and TEM measurements. This method may not only offer a facile technique for c-BN production, but also provide a new research field in c-BN thermodynamics.     

Cubic-BN nanocrystals synthesis by pulsed laser induced liquid–solid interfacial reaction

Cubic boron nitride (c-BN) nanocrystals have been synthesized by pulsed laser induced liquid–solid interfacial reaction. It is shown that the diameters of the prepared quasi-spherical c-BN nanocrystals vary from 30 to 80 nm via transmission electron microscopy (TEM). The 2θ values of the X-ray diffraction (XRD) peaks of the resultant c-BN nanocrystals are 43.16°, 74.16°, 90.08° and 136.1°, respectively, corresponding to the (1 1 1), (2 2 0), (3 1 1) and (3 3 1) crystalline planes of a c-BN phase. Fourier transform infrared (FTIR) spectroscopy has also been used to characterize the structure of boron nitride. The formation of c-BN nanocrystals upon pulsed laser ablation at the liquid–solid interface is discussed in detail.     

Neutron damage of hexagonal boron nitride: h-BN

Hexagonal boron nitride (h-BN) was neutron damaged at an integral flux of 2.40 × 10¹² n cm⁻² s⁻¹ for 1, 2, 3 and 4 h. The h-BN samples undergo a transition from sp² to sp³ hybridization as a consequence of the neutron induced damage with the formation of cubic boron nitride (c-BN) spots, as suggested both by FT–IR and Raman spectroscopy. In addition to c-BN, also a certain degree of amorphization is achieved by h-BN already at the lowest neutron fluence of 8.64 × 10¹⁵ n cm⁻² as clearly evidenced by Raman spectroscopy. The Wigner or stored energy to the radiation-damaged h-BN samples was studied by DSC and also in this case there was a clear evidence that the neutron damage was partly irreversible and insensitive to the thermal annealing up to 630 °C. Electron spin resonance (ESR) was employed to further study the structural defects induced by the neutron bombardment of h-BN. Two kinds of paramagnetic defective structures centered on ¹¹B atoms were identified.

     

First-principles study on the adhesive and electronic property of c-BN(111)/Cu(111) interface

The interface properties of c-BN/Cu composite play an important role in its application. In this work, we employed first-principles calculation to investigate the bonding properties and electronic characteristics of the c-BN(111)/Cu(111) interface. The adhesion properties, partial density of states (PDOS), charge density, and charge density difference of different interfaces were analyzed. The results show that the interface of B-termination “OT” stacking mode is the most stable one. The density of states at the c-BN(111)/Cu(111) interface is similar to that of c-BN bulk phase, indicating that the electronic states of the c-BN layer are not affected by the Cu atoms. The PDOS diagram shows that the 2p orbital of B atoms and the 2p orbital of N atoms are hybridized in the c-BN layer. Besides, 2p orbital of B(N) atoms and 3d orbital of Cu atoms are hybridized in the interface. The covalent bonds and ionic bonds in the interface of N-termination and B-termination OT stacking mode structures are stronger than that of “SL” and “TL” stacking mode. So, the OT stacking mode has larger adhesive energy. Furthermore, Cu and c-BN can form a good coherent interface, which can be used to prepare c-BN/Cu composites and functional materials with excellent mechanical properties.     

Fluorinating hexagonal boron nitride into diamond-like nanofilms with tunable band gap and ferromagnetism

Cubic boron nitride (c-BN) possesses a number of extreme properties rivaling or surpassing those of diamond. Especially, owing to the high chemical stability, c-BN is desired for fabricating electronic devices that can stand up to harsh environments. However, realization of c-BN-based functional devices is still a challenging task due largely to the subtlety in the preparation of high-quality c-BN films with uniform thickness and controllable properties. Here, we present a simple synthetic strategy by surface fluorination of few-layered hexagonal boron nitride (h-BN) sheets to produce thermodynamically favorable F-terminated c-BN nanofilms with an embedded N-N bond layer and strong inbuilt electric polarization. Due to these specific features, the fluorinated c-BN nanofilms have controllable band gap by thickness or inbuilt and applied electric fields. Especially, the produced nanofilms can be tuned into substantial ferromagnetism through electron doping within a reasonable level. The electron-doping-induced deformation ratio of the c-BN nanofilms is found to be 1 order of magnitude higher than those of carbon nanotubes and graphene. At sufficient high doping levels, the nanofilm can be cleaved peculiarly along the N-N bond layer into diamond-like BN films. As the proposed synthesis strategy of the fluorinated c-BN nanofilms is well within the reach of current technologies, our results represent an extremely cost-effective approach for producing high-quality c-BN nanofilms with tunable electronic, magnetic, and electromechanical properties for versatile applications.     

X-ray spectra and electronic structure of boron nitride in different crystallographic modifications

The electronic energy structure of boron nitride with ZnS (c-BN) and wurtzite (w-BN) type crystal lattices is calculated by the local coherent potential (LCPA) method in a multiple scattering approximation. The local partial 2p states of boron with c-BN and w-BN are compared with the boron K emission spectra in the corresponding compounds. Fine structure is first obtained in the region of the top of the valence band. Translated fromZhurnal Struktumoi Khimii, Vol. 39, No. 6, pp. 1083–1087, November–December, 1998.     

XPS investigations of thick,oxygen-containing cubic boron nitride coatings

Cubic boron nitride (c-BN) coatings produced by PVD and PECVD techniques usually exhibit very high compressive stresses and poor adhesion due to intense ion bombardments of the growing surface that are mandatory during the formation of the cubic phase. Our previous investigations indicate, however, that a controlled addition of oxygen during film deposition can lead to a drastic reduction of the detrimental stress, yet having minor effect on the cubic phase content in the resulting low-stress, oxygen-containing c-BN:O coatings (as already confirmed by various analytical methods like X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM) and electron diffraction, and Fourier transform infra-red spectroscopy (FTIR)). This stress-reduction technique makes possible the deposition of well-adhered, superhard c-BN:O layer about 2 μm thick through magnetron sputtering on top of an adhesion-promoting base layer and via a compositional-graded nucleation process. In the present paper, we report on the atomic bonding structure relating in particular to the incorporated oxygen within such a thick c-BN:O coating using X-ray photoelectron spectroscopy (XPS). The c-BN:O top layer was found to consist of about 49.8 at% boron, 42.2 at% nitrogen, 5.5 at% oxygen, as well as small amounts of carbon (1.4 at%) and argon (1.1 at%). Because of the low oxygen concentration, it was difficult to categorize the bonding state of oxygen according to the XPS spectra of B 1s and N 1s elemental lines. However, the detailed results in terms of the O 1s spectrum strongly indicated that the lattice nitrogen of c-BN was partially replaced by the added oxygen.     

Determination of nitrites by the formation of bisazo dye

A facile, sensitive and rapid spectrophotometric method for the determination of nitrite is presented. The method involves the reaction of nitrite with 4-aminoazobenzene under acidic conditions in the presence of a bromide ion allowing to complete the diazotization reaction almost instantaneously. The formed diazonium ion is then coupled with acetyl acetone to give bisazo dye in an aqueous alkaline medium having maximum absorption at 500 nm. The molar absorptivity and Sandell’s sensitivity of the method were found to be 4.2 × 10⁴ dm³ mol⁻¹ cm⁻¹ and 1.1 ng cm⁻², respectively. The system obeys the Beer’s law within the concentration range of 0.1–9 μg of nitrite in the final sample volume of 10 cm³. Optimum reaction conditions were evaluated and the influence of ionic interference on the determination of nitrite has been studied. The developed method has been applied in the determination of nitrite in water and soil samples, and the results were statistically evaluated.     

X-Ray Photoelectron Spectra and Electronic Structure of Solid Solutions Based on Cubic Boron Nitride

The electronic energy structure of substitution solid solutions based on boron nitride B _1-x NR _x and BN _1-x R_x (R = C, O) (x=0.25) in a diamond-like modification of ZnS type has been investigated by the local coherent potential method in terms of multiple-scattering theory. The total and partial densities of states were calculated for each element in a solid solution. The crystalline potential was calculated using an MT approximation. The lattice parameter was chosen based on X-ray diffraction data for c-BN: 0.3615 nm. The electronic energy structures of the solid solutions and binary c-BN are compared in the framework of a single approximation. The calculated partial densities of states are compared with the experimental X-ray emission and photoelectron spectra of boron, nitrogen, and oxygen in these compounds. The calculated partial charges of electrons at the top of the valence band show that charge transfer from boron to nitrogen takes place in the solid solutions. An analysis of the electronic structures of the solid solutions of boron nitride indicates that the quasicore resonances inherent in binary c-BN are delocalized and that chemical bonding in the solid solutions of boron nitride is weakened.