Characteristic temperatures and electron number densities in an R.F. capacitively coupled plasma

The excitation temperatures of Ar and Fe, the ionization temperatures of Ar and Ca and the electron number densities have been determined for a radiofrequency capacitively coupled plasma in the tip-ring electrode geometry. The temperatures and the electron number densities possess their maximum value close to the electrodes.     

Tomographically resolved ionization temperatures and electron densities in the inductively coupled plasma determined by the line-to-continuum method

This article is an electronic publication in Spectrochimica Acta Electronica (SAE), the electronic section of Spectrochimica Acta Part B (SAB). The hardcopy text is accompanied by three disks with data files with the hardcopy paper in Word 5.0 and ASCII format, and a disclaimer. The text details the purpose of the work and the structure of the three-dimensional Ar ionization temperature and electron number density data files. The line-to-continuum method was used to evaluate the spatial distribution of Ar ionization temperatures, T_ion, and electron number densities, n_e, within a dry Ar inductively coupled plasma (ICP). The emission measurements were spatially resolved in three dimensions by reconstruction algorithms for computed tomography. The 40.68 MHz Ar ICP was operated at applied r.f. power levels of 0.75 and 1.0 kW. The reconstructed distributions of Ar I line emission (430.0 nm) and continuum emission (428.6 nm) show good reproducibility over a series of five replicate runs. Argon ionization temperatures remain within a 6500–8500 K range throughout the continuum-emission cone of the plasma. Deviations from this temperature range occur in the central channel and around the outer edge of the plasma. Low in the plasma, the central-channel T_ion is cooler than 6000 K. Along the outer edge of the plasma, the line-to-continuum ratio becomes small; this low ratio results in erroneously high temperatures (> 12000 K). The errors in T_ion appear to be due to reproducible artifacts in the reconstruction process that lead to low Ar I line-emission readings along the outer edge of the plasma. Electron densities show a maximum of 8.5 × 10¹⁴ cm⁻³ and 1.2 × 10¹⁵ cm⁻³ at 0.75 and 1.0 kW, respectively. Electron number densities were much better behaved than T_ion due to their dependence on the square-root of continuum measurements and only the fourth-root of T_ion.     

Plasma diagnostic on a low-flow plasma for inductively coupled plasma optical emission spectrometry

In order to elucidate the fundamental properties of a low-flow inductively coupled plasma (ICP) operated under total Ar consumption of 0.6 L min^− 1, excitation temperatures, rotational temperatures, ionization temperatures, electron temperatures, and electron number densities were studied with optical emission based methods. The plasma was operated in the SHIP torch (Static High Sensitivity ICP), which was designed for optical emission spectrometric detection.     

Kinetic temperatures and electron densities in the plasma of a side view Grimm-type glow discharge

A special source in which the Grimm-type plasma is viewed side-on for spectroscopic measurements was constructed. The kinetic gas temperatures and electron densities were derived from the line profiles of Ar I 415.8 nm and He I 447.1 nm respectively.     

The use of different plasma gases (Ar,N2 and air) for CMP-OES: figures of merit and temperature measurements

A comparative study of a 600 W capacitively coupled microwave plasma (CMP) operated with different plasma gases (Ar, N(2) and air) with respect to the achieved detection limits for Fe, Cr, Zn, Ca and Mg have been carried out. Radially and axially resolved rotational temperatures (T(rot)), excitation temperatures (T(exc)) and electron number densities (n(e)) of these plasmas have been determined using OH (T(rot)), Fe (T(exc)) and Mg (n(e)) as thermometric species. The influence of different gas flow rates on T(rot), T(exc) and n(e), and of Li as an easily ionized element on T(exc) has been investigated.     

Fluid Simulation of Capacitively Coupled HBr/Ar Plasma for Etching Applications

In this work, a fluid model has been applied to study HBr/Ar capacitively coupled plasma discharges that are being used for anisotropic etching process. Based on time average reaction rates, the model identify the most dominant species in HBr/Ar plasma. Our simulation results show that the neutral species like H and Br, which are the key precursors in chemical etching, have bell shape distribution while ions like HBr⁺, Br⁺ and Ar⁺ which plays a dominant role in the physical etching, have double humped distribution and shows peaks near electrodes. The effect of HBr/Ar mixing ratios on densities of dominant species are analyzed. The addition of Ar to HBr plasma decreases H, Br and HBr⁺ densities slightly while increases Br⁺ and Ar⁺ densities. It was found that the dilution of HBr by Ar results in an increase in electron density and electron temperature, which results in more ionization and dissociation. The densities and hence the fluxes of the neutrals and positive ions for etching and subsequently chemical etching versus physical etching in HBr/Ar plasmas discharge can be controlled by tuning Ar concentration in the discharge and the desire etching can be achieved.     

The use of different plasma gases (Ar, N 2 and air) for CMP-OES: figures of merit and temperature measurements

A comparative study of a 600 W capacitively coupled microwave plasma (CMP) operated with different plasma gases (Ar, N₂ and air) with respect to the achieved detection limits for Fe, Cr, Zn, Ca and Mg have been carried out. Radially and axially resolved rotational temperatures (T_rot), excitation temperatures (T_exc) and electron number densities (n_e) of these plasmas have been determined using OH (T_rot), Fe (T_exc) and Mg (n_e) as thermometric species. The influence of different gas flow rates on T_rot, T_exc and n_e, and of Li as an easily ionized element on T_exc has been investigated.     

Diagnostics of silicon plasmas produced by visible nanosecond laser ablation

The second harmonic of a pulsed Nd:YAG laser (532 nm) has been used for the ablation of silicon samples in air at atmospheric pressure. In order to study the interaction for silicon targets, the laser-induced plasma characteristics were examined in detail with the use of a space- and time-resolved technique. Electron temperatures, ionic temperatures and electron number densities were determined. A discussion of thermodynamic equilibrium status of the silicon-microplasma is presented. Electron number densities are deduced from the Stark broadening of the line profiles of atomic silicon. Plasma ionization and excitation temperatures were determined from the Boltzmann plot and the Saha–Boltzmann equation, respectively. A limited number of suitable silicon lines for the studies of temperatures were found and the effect of these lines on the temperature measurements is discussed. Electron temperatures in the range of 6000–9000 K and ionic temperatures of 12 000–17 000 K with electron number densities of the order of 10¹⁸ cm⁻³ were observed. The breakdown threshold fluence has been also measured. Silicon plasmas were also characterized in terms of their morphology (shape and size) as a function of laser energy and delay time.     

Etching Mechanism of Pb(Zr,Ti)O3 Thin Films in Cl2/Ar Plasma

The etching mechanism of Pb(Zr,Ti)O₃ (PZT) thin films in Cl₂/Ar plasma was investigated through the analysis of gas mixing ratio on volume and surface chemistries. Experiments showed that PZT etch rate keeps a constant value up to 40% of Ar addition into Cl₂/Ar plasma. Langmuir probe measurement showed the noticeable influence of Cl₂/Ar mixing ratio on electron temperature and electron density. The modeling of volume kinetics for neutral and charged particles indicated monotonic changes of both densities and fluxes of active species such as chlorine atoms and positive ions. The analysis of surface kinetics showed that PZT etch rate behavior may be explained by the combination of spontaneous and ion-assisted etch mechanisms.     

氢化物发生与ICP/AES联用后等离子体的性质研究

本文通过测量电子密度ｎｅ,电子温度Ｔｅ,激发温度Ｔｅｘｃ及谱线强度,将氢化物进样同水溶液常规气动雾化进样对比,研究了氢化物进入ＩＣＰ后,对等离子体性质的影响。结果表明,由于氢化物的引入,ＩＣＰ的激性能得到了改善。     

Photographic plasma images and electron number density as well as electron temperature mappings of a plasma sustained with a modified argon microwave plasma torch (MPT) measured by spatially resolved Thomson scattering

In this work the determination of electron number densities and electron temperatures for the case of a modified microwave plasma torch (MPT) operated at 100 W with argon by means of spatially resolved Thomson scattering measurements and photographic records of the MPT at different working conditions are reported. With an internal gas flow of 500 ml min⁻¹ and an outer gas flow of 200 ml min⁻¹ electron number densities and electron temperatures are in the range of 10²⁰ m⁻³ to 10²¹ m⁻³ and of 16 000–18 000 K, respectively. When increasing the internal gas flow from 500 to 900 ml min⁻¹ the plasma becomes longer and the maximum electron number density increases by a factor of 2. An increase of the outer gas flow from 200 to 700 ml min⁻¹ leads to a lifting of the whole plasma from the burner edge with the maximum electron number density remaining unchanged. An increase of the power from 80 to 180 W was found to lead to higher electron number densities whereas the electron temperatures remain unchanged. The addition of 1.2 mg min⁻¹ of water vapor to the internal gas flow leads to a decrease of the electron number density from 4.7×10²⁰ m⁻³ to 2×10²⁰ m⁻³ and to an increase of the electron temperature from 16 000 to 22 000 K. In order to document the influence of the internal gas flow rate, water introduction and introduction of easily ionized elements on the visible plasma shape digitally recorded photos of the plasma are presented.     

Diagnostical measurements in a single electrode,atmospheric pressure,microwave plasma

Several important diagnostic parameters are determined for a single electrode atmospheric pressure plasma system described by HANAMURA et al. [1, 2]. These include excitation temperatures and electron number densities and electron temperatures for various plasma gases at several different input powers. The variation of emission intensity with various plasma gases and their mixtures is investigated, as well as the effect of the chemical form of the sample on emission intensity, for the purposes of optimizing operating conditions for emission spectrochemical analysis.     

A spectrometric study of a 40 MHz inductively coupled plasma—VI: Argon continuum in the visible region of the spectrum

The nature of a pure Ar continuum observed in ICP-AES has been studied in the 400–700 nm range. The radiative recombination is predominant below 500 nm, but bremsstrahlung must be considered above 500 nm. The electron temperature T_e deduced from the ratio of an Ar line to the adjacent continuum is about 10,000 K, which is significantly different from the excitation temperatures previously measured in this source. The electron number density (n_e) determined from the continuum is in good agreement with the value determined from the Stark effect on Ar 1549.5 nm line and about 5 × 10²⁰ m^?3. The continuum varies with the input power and the carrier gas flow rate. This is mainly due to the variation of n_e.     

Dependence of thermal diffusion factor of binary mixtures to the thermodynamic state by NEMD simulation

In this paper, we investigate the dependence of thermal diffusion factor and thermal conductivity to the temperature, density and mole fraction in Lennard–Jones binary mixtures of isotopes, noble gases and SF₆–noble gases by non-equilibrium molecular dynamics simulations.The results for the isotopic mixtures indicated that the density has a crucial effect on the dependence of thermal diffusion factor on the temperature. For isotope system at low density, thermal diffusion factor increased with temperature then remains constant at higher temperatures and the slope of thermal diffusion factor vs. temperature is positive while at higher density, thermal diffusion factor decreased with temperature and then fluctuate. For noble gas mixtures, thermal diffusion factor reduces with increasing of temperature and remain constant at high temperatures. For SF₆–Ar system, thermal diffusion factor has a negative slope and reduced with increasing of temperature, but remain nearly constant at high temperatures. For Xe–SF₆ thermal diffusion factor changed sign and the slope of thermal diffusion factor vs. temperature was negative. The results also show that thermal conductivity increases with temperature for all systems.The dependence of thermal diffusion factor to mole fraction of heavier component also investigated. The inverse of thermal diffusion factor versus mole fraction of heavier component is linear for isotope mixtures at thermodynamic conditions: (a) Low temperature, large mass ratio and all densities. (b) High temperature, large mass ratio and low densities. For Ne–Kr mixture, the inverse of thermal diffusion factor shows a linear dependence to the mole fraction of heavier component in moderate temperatures and all densities. For SF₆–Ar and Xe–SF₆ mixtures, the inverse of thermal diffusion factor has linear behaviour at moderate temperatures and low density and high temperature and low density, respectively.     

Measurement of electron densities by a microwave cavity method in 13.56-MHz RF plasmas of Ar,CF4, C2F6, and CHF3

Electron densit ies have been determined /or RF plasmas that were generated within a microwave resonant cavity by measuring the difference of the resonance frequencies with and without plasma. Since that method only yields a value of the electron density weighted ouer the microwave electric field distribution, to obtain real values an assumption on the spatial distribution of the electron density had to he made. Spatial profiles were taken of the emission of a 4s–5p Ar line at 419.8 not (with a small Ar admixture). The electron densities have been determined as a function of pressure and RF power in Ar, CF₄, C₂ F₆ and CHF, plasmas. The results indicate that the electron density for the last three gases decreases as a function of pressure above 50 m Torr. Typical values for the electron density for the investigated parameter range are 1–6 · 10³ cm^–3. Furthermore, the electron density is the lowest in gases with a high attachment cross .section.     

Local optical emission spectroscopy of excited species effused from an evaporation cell and a sputter source into dense plasmas – Basic studies for the deposition of thin gradient films

Space resolved optical emission spectroscopy has been applied to determine the distribution of excited species in dense plasmas which are used for the deposition of thin coatings. Typical electron densities and electron temperatures in the plasma facility PETRA ( Plasma Engineering and Technology Research Assembly) are in the range of n(e) = 10(12) cm(-3) and T(e) = 10 eV. During the deposition process material (Al) is evaporated from a vapour cell under controlled conditions. The vapour stream is guided into a dense plasma which is composed of inert gas, Ar or He, and hydrocarbon species produced from the dissociation of C(2)H(2). The evaporated Al-stream which travels with thermal velocity into a plasma of high electron density, is nearly completely ionized due to the short mean free path for electron impact ionization in the above mentioned parameter range. Optical emission spectroscopy has been applied to investigate the interaction processes between the vapour stream and the plasma as well as the transport of the ionized Al along the applied magnetic field. For the measurements space resolved optical emission spectroscopy with an in-situ translation mechanism of the optical fibre has been used to measure the local concentrations of excited Al neutrals and ions as well as the concentration of the background plasma species.     

Molecular-dynamics study of the density scaling of inert gas condensation

The initial stages of vapor condensation of Ge in the presence of a cold Ar atmosphere were studied by molecular-dynamics simulations. The state variables of interest included the densities of condensing vapor and gas, the density of clusters, and the average cluster size, while the temperatures of the vapor and the clusters were separately monitored with time. Three condensation processes were explicitly identified: nucleation, monomeric growth, and cluster aggregation. Our principal finding is that both the average cluster size and the number of clusters scale with the linear dimension of the computation cell, L, and Ln, with the scaling parameter n approximately 4, corresponding to a reaction order of nu approximately 2.33. This small value of n is explained by an unexpected nucleation path involving the formation of Ge dimers via two-body collisions.     

微波等离子体炬光源基本特性的研究

用计算机化断层扫描成象技术研究了微波等离子体炬(MPT)放电的发射轮廓,证明该光源具有良好的对称性,并有一个有利于样品引入的中央通道,最佳分析区在炬管上方5～10 mm,用激光Thomson散射和Rayleigh散射技术测定了ArMPT和HeMPT放电的电子温度、电子密度和气体温度,证明MPT放电的电子温度很高而气体温度较低,是一种非热光源。其中的高能电子处于过布居状态,具有很高的激发能力。     

Theory of the electron distribution in compressed atoms at high temperatures

To calculate atom-atom interactions at high temperatures, one needs the electron densities of the interacting atoms. The present paper outlines an approach by which the temperature-dependent electron densities of compressed atoms may be obtained. The approach suggested makes use of the temperature-dependent Thomas-Fermi (TF ) equation, and a variational principle by which this equation may be solved approximately.