晶态Ca3C60与Ca5C60的能带结构研究

用三维EHMO晶体轨道程序分别对Ca3C60，Ca5C60进行了能带结构的计算．计算结果表明，Ca3C60没有导电性，能隙约为0．9eV；而在Ca5C60的能带结构中，费米面刚好穿过半满带，表明Ca5C60是导体；同时在费米面附近有较大的态密度值，表明Ca5C60与K3C60等类似，具有较高的超导转变温度．电荷分析表明，在这两种情况下，钙原子的4s电子基本上全转移到C60上，C60分子可形成一个稳定的带6到10个电子的负离子．     

NbC固体表面能带和电子结构的理论研究

采用DFT/BLYP方法对NbC(001)和(111)面的电子结构进行研究。计算结果表明,对于NbC(001)表面,其表面态主要集中于费米能级(EF)下方约4.5eV附近区域,并以表面Nb原子和C原子为主要成分。O2分子在该表面吸附时,趋向于吸附在表面Nb原子上。对于NbC(111)表面,其表面态集中在EF下方0.02.0eV区域,靠近EF的态具有较高的表面活性,其主要成分为表面Nb原子的4dxz/dyz成分。上述结论与光电子能谱实验结果基本一致;但由于金属原子d电子数的差异导致NbC(111)表面态成分与类似的TiC化合物并不相同。     

双Tl-O层Tl-Ba-Ca-Cu氧化物超导体的能带结构

利用EHT近似下的紧束缚能带结构计算方法计算了Tl-Ba-Ca-Cu氧化物超导体双Tl-O层体系的能带结构。计算结果表明费米面在a~*b~*面上是封闭的, 费米能级上电子态密度的增加和体系转变湿度(T_c)的提高是相一致的。Cu-O面上Cu和O的净电荷有规律的变化说明, Cu-O面上Cu和O的离子价态可影响该体系的超导电性。     

(Pt_nMn)~(±,0)(n=1～5)掺杂团簇结构与磁性的密度泛函研究

采用密度泛函理论(Demity Function Theory)中的B3LYP方法,在Lanl2dz赝势基组水平上对(PtnMn)±,0(n=1～5)团簇的几何构型进行了全优化,并对基态的能级以及磁性进行了研究.结果表明:PtMn掺杂团簇的自旋多重度比较高,这种性质跟纯Mn团簇相似.并且发现一般情况下Mn原子参与成键数越多,结构越稳定,在成键数相同的情况下,成键的平均键长越短越稳定;其次(PtnMn)±,0团簇的所有稳定结构都表现为铁磁性耦合;掺杂一个Mn原子后的团簇磁性大大增强,磁矩主要来源于未满的d壳层电子,且Mn原子上的局域磁矩远大于Pt原子.随着Pt原子个数的增加,Mn原子的局域磁矩变化不大,但团簇的总磁矩渐渐增大.     

Nb元素影响TiAl金属间化合物键合特征的第一原理计算

采用第一原理方法, 研究了Nb元素对TiAl金属间化合物电子结构及其对Ti, Al和O原子键合作用的影响. 研究结果表明, Nb元素对富Ti和富Al的TiAl金属间化合物体系电子结构及键合作用的影响不同. 对于富Ti的TiAl金属间化合物体系, Nb原子取代Ti晶格位置后, 减小了Ti费米能级处的电子密度, 削弱了Ti原子与O原子间的相互作用; 同时增强了Al原子中s电子和O原子中p电子的相互作用. 而Nb原子对富Al的TiAl金属间化合物体系中Ti/Al与O的相互作用影响较小. 同时, 向TiAl金属间化合物中掺杂Nb元素, 增大了TiO2的生成能垒, 减小了Al2O3的生成能垒, 有利于促进抗氧化膜Al2O3的生成. 因此, 添加合金化元素Nb有利于提高TiAl金属间化合物的抗氧化性能, 这与实验报道相一致.     

Fe原子吸附对单层WS_2结构和性质的影响

本文采用基于密度泛函理论(DFT)的第一性原理方法研究了Fe原子吸附对单层WS_2结构和性质的影响。研究结果表明:Fe原子吸附在W原子的顶位最稳定,相应的原子吸附能为1.84 eV。Fe与衬底间的相互作用削弱了紧邻W―S键,使其键长增大0.011 nm。由于衬底原子的影响,Fe原子d轨道的电子重新分布,形成了2μB左右的局域原子磁矩。在低覆盖度下(0.125和0.25 ML),磁性作用以超交换作用为主,铁磁序不稳定。而在高覆盖度下(0.5和1.0 ML),Fe原子间距减小,磁性作用以RKKY作用为主,铁磁序稳定。电子结构的计算结果显示,在高覆盖度下,Fe/WS_2结构在费米能级处的电子自旋极化率等于100%。自旋向上与向下通道分别为间接带隙的半导体和金属。在1.0 ML覆盖度下,自旋向上的禁带宽度约为0.94 eV。这说明Fe原子吸附可以将直接带隙的WS_2半导体转变成半金属,形成一种潜在的自旋电子器件材料。     

Ge_nEu(n=1-13)团簇的结构、电子及磁性质(英文)

利用密度泛函理论在广义梯度近似下研究了GenEu(n=1-13)团簇的生长模式和磁性.结果表明:对于GenEu(n=1-13)团簇的基态结构而言,没有Eu原子陷入笼中.这和SinEu以及其它过渡金属掺杂半导体团簇的生长模式不同.除GeEu团簇外,GenEu(n=2-13)团簇的磁矩均为7μB.团簇的总磁矩与Eu原子的4f轨道磁矩基本相等.Ge、Eu原子间的电荷转移以及Eu原子的5d、6p和6s间的轨道杂化可以增强Eu原子的局域磁矩,却不能增强团簇总磁矩.     

?-Bi2O3/BiOI异质结的制备及其有效去除有机染料的光催化作用

窄带半导体氧化铋(Bi2O3,带宽介于2.1-2.8 eV)因其强的可见光吸收和无毒性等特性而一直被认为是潜在的可见光催化材料.通常, Bi2O3具有a,b,g,d,e和w等六种晶型,其中,a,b和d-Bi2O3具有催化可见光降解有机物的活性.可是,由于其光生电子-空穴复合较快, Bi2O3的光催化活性还很低,远不够实际应用.将半导体与另一种物质如贵金属或其他半导体复合形成异质结是一种有效控制光生电子-空穴复合,提高光催化活性的方法.目前已成功开发了许多Bi2O3基的异质结光催化材料.尤其是通过用卤化氢酸与a-Bi2O3直接作用原位形成的a-Bi2O3与铋的卤氧化合物BiOX (X = Cl, Br或I)的异质结在提高光催化活性和制备方面显示了优越性.然而,具有更强可见光吸收的b-Bi2O3(带宽约2.3 eV)与卤氧化合物的异质结光催化性能却鲜有报道.本文通过用HI原位处理b-Bi2O3形成b-Bi2O3/BiOI异质结.该异质结表现较纯b-Bi2O3和BiOI更高的降解甲基橙(MO)可见光催化活性.通过多晶X射线衍射(XRD)、紫外漫散射(UV-DRS)、扫描电镜、透射电镜(TEM)、X光电子能谱(XPS)和荧光(PL)等手段研究了b-Bi2O3/BiOI异质结,并提出其高催化活性的机理. XRD结果显示,用HI原位处理b-Bi2O3可形成BiOI相,并且随着HI使用量增加,混合物中的BiOI相逐渐增多. HRTEM结果进一步表明,在混合物中的b-Bi2O3和BiOI都是高度结晶态,且两相之间有很好的接触,从而有利于两相之间的电荷移动.根据UV-DRS和ahv =A(hv –Eg)n/2等公式,计算出了b-Bi2O3和BiOI带隙分别为2.28和1.77 eV,以及两种半导体的导带和价带位置. b-Bi2O3的导带和价带位置分别为0.31和2.59 eV,而BiOI的导带和价带位置分别为0.56和2.33 eV.这样两种半导体能带结构呈蜂窝状,显然不适合光生电子-空穴的分离.然而, XPS测定结果显示,b-Bi2O3和BiOI相互接触形成异质结后,b-Bi2O3相的电子向BiOI相发生了明显的移动.根据文献报道,当两种费米能级不同的半导体接触时,电子会从费米能级高的半导体移向费米能级低的半导体,直至建立新的费米能级.b-Bi2O3被报道是典型的n型半导体,其费米能级在上靠近其导带位置;而BiOI是典型的p型半导体,其费米能级在下靠近其价带位置.基于此,我们提出了b-Bi2O3/BiOI异质结高催化活性的机理.当b-Bi2O3与BiOI形成异质结时,由于b-Bi2O3的费米能级较BiOI的高,因而电子从b-Bi2O3转向BiOI,直至新的费米能级形成.因此电子在两相之间移动导致了b-Bi2O3能带结构整体下移,以及BiOI能带结构整体上移,使得新形成的BiOI导带和价带位置高于b-Bi2O3的.当该异质结在可见光的照射下,光生电子将移至b-Bi2O3的导带,而空穴会移至BiOI的价带,最终达到了光生电子-空穴分离的效果,产生高的光催化活性. PL测试也证实了b-Bi2O3/BiOI异质结具有更长的光生电子-空穴寿命.     

Pt/Cu(001)-p(2×2)-O表面吸附结构的总能计算

采用密度泛函理论(DFT)研究了氧吸附后Pt/Cu(001)表面合金的原子结构和表面性质. 计算结果表明, 在Pt/Cu(001)-p(2×2)-O表面最稳定结构中, 衬底表面原子层不发生再构, 氧原子吸附于4重对称的Pt原子谷位, 每个氧原子吸附能约为2.303 eV. 吸附结构的Cu—O和Pt—O键键长分别为0.202和0.298 nm, 氧原子的吸附高度ZCu—O约为0.092 nm. 吸附前后Pt/Cu(001)-1ML(monolayer)表面合金的表面功函数分别为4.678和5.355 eV. 吸附表面氧原子和衬底的结合主要来自氧原子2p轨道和衬底金属原子d轨道的杂化作用, 氧原子吸附形成的表面电子态主要位于费米能级以下约-2.7 eV 处.     

吸附O的Cu(110)c(2×1)表面原子结构和电子态

采用第一性原理的密度泛函理论方法计算了清洁Cu(110)表面和吸附O原子的Cu(110) c(2×1)表面的原子结构, 结构弛豫和电子结构, 得到了各种表面结构参数. 分别计算了O原子在Cu(110)表面三个可能吸附位置吸附后的能量, 并给出了能量最低的吸附位置上各层原子的弛豫特性和态密度. 结果表明O吸附后的Cu(110)表面有附加列(added-row)再构的特性, O原子吸附在最表层铜原子上方, 与衬底Cu原子的垂直距离为0.016 nm, 以氧分子为能量基准的吸附能为－1.94 eV; 同时由于Cu 3d- O 2p态的杂化作用使得低于费米能级5.5~6.0 eV的范围内出现了局域的表面态. 计算得到清洁的和氧吸附的Cu(110)表面的功函数分别为4.51 eV和4.68 eV. 电子态密度的结果表明：在Cu(110) c(2×1) 表面O吸附的结构下, 吸附O原子和金属衬底之间的结合主要是由于最表层Cu原子3d态和O原子2p态的相互作用.     

Theoretical study of CeO2 and Ce2O3 using a screened hybrid density functional

The predicted structures and electronic properties of CeO(2) and Ce(2)O(3) have been studied using conventional and hybrid density functional theory. The lattice constant and bulk modulus for CeO(2) from local (LSDA) functionals are in good agreement with experiment, while the lattice parameter from a generalized gradient approximation (GGA) is too long. This situation is reversed for Ce(2)O(3), where the LSDA lattice constant is much too short, while the GGA result is in reasonable agreement with experiment. Significantly, the screened hybrid HSE functional gives excellent agreement with experimental lattice constants for both CeO(2) and Ce(2)O(3). All methods give insulating ground states for CeO(2) with gaps for the 4f band lying between 1.7 eV (LSDA) and 3.3 eV (HSE) and 6-8 eV for the conduction band. For Ce(2)O(3) the local and GGA functionals predict a semimetallic ground state with small (0-0.3 eV) band gap but weak ferromagnetic coupling between the Ce(+3) centers. By contrast, the HSE functional gives an insulating ground state with a band gap of 3.2 eV and antiferromagnetic coupling. Overall, the hybrid HSE functional gives a consistent picture of both the structural and electronic properties of CeO(2) and Ce(2)O(3) while treating the 4f band consistently in both oxides.     

Tuning LDA+U for electron localization and structure at oxygen vacancies in ceria

We examine the real space structure and the electronic structure (particularly Ce4f electron localization) of oxygen vacancies in CeO(2) (ceria) as a function of U in density functional theory studies with the rotationally invariant forms of the LDA+U and GGA+U functionals. The four nearest neighbor Ce ions always relax outwards, with those not carrying localized Ce4f charge moving furthest. Several quantification schemes show that the charge starts to become localized at U approximately 3 eV and that the degree of localization reaches a maximum at approximately 6 eV for LDA+U or at approximately 5.5 eV for GGA+U. For higher U it decreases rapidly as charge is transferred onto second neighbor O ions and beyond. The localization is never into atomic corelike states; at maximum localization about 80-90% of the Ce4f charge is located on the two nearest neighboring Ce ions. However, if we look at the total atomic charge we find that the two ions only make a net gain of (0.2-0.4)e each, so localization is actually very incomplete, with localization of Ce4f electrons coming at the expense of moving other electrons off the Ce ions. We have also revisited some properties of defect-free ceria and find that with LDA+U the crystal structure is actually best described with U=3-4 eV, while the experimental band structure is obtained with U=7-8 eV. (For GGA+U the lattice parameters worsen for U>0 eV, but the band structure is similar to LDA+U.) The best overall choice is U approximately 6 eV with LDA+U and approximately 5.5 eV for GGA+U, since the localization is most important, but a consistent choice for both CeO(2) and Ce(2)O(3), with and without vacancies, is hard to find.     

Geometry and electronic structure of rhombohedral C60 polymer

Geometry and electronic structure of the rhombohedral C₆₀ polymer are studied by means of density-functional theory (DFT) within the local-density-approximation (LDA). It is found that stacking sequence proposed by Chen et al. is more stable than the original model by Núñez-Regueiro et al., although the energy difference between the two is very small. The material is a semiconductor with the LDA gap of 0.68 eV. Conduction bands show dependence on the way of stacking, and density of states has a sharp peak at the conduction bottom. Bond lengths are also calculated and found to be in good agreement with the results of the X-ray structure analysis.     

LnCu2O4(Ln=Gd,Nd)电子结构的XPS研究

用XPS测定了LnCu2O4(Ln=Gd, Nd)的内层和价层电子能谱,观察到LnCu2O4中稀土金属的3d电子结合能比相应的稀土金属简单氧化物的3d结合能低0.8～0.9 eV,而Cu的2p电子结合能比CuO的高0.4～0.5 eV,因此推断在LnCu2O4的Ln－O－Cu链中存在Cu→O→Ln电荷转移.XPS分析还表明LnCu2O4的Cu原子上有较低的电荷密度,但不存在混合价态.此外,通过比较价电子能谱,发现NdCu2O4的Ln 4f Cu 3d O 2p价带中心比GdCu2O4的价带中心向Fermi能级移近了3.4 eV,而且NdCu2O4的价带谱更窄.     

Optical surface properties and morphology of MgO and CaO nanocrystals

Optical absorption and photoluminescence emission properties of dehydroxylated MgO and CaO nanocrystals are discussed with respect to particle morphology and size. On MgO nanocubes with pronounced corner and edge features two emission bands at 3.4 and 3.3 eV result from the excitation of 4-coordinated surface O(4C)(2-) anions in edges at 5.4 eV and of regular oxygen-terminated corners at 4.6 eV, respectively. Morphologically ill-defined CaO particles are a factor of 5 larger, do not display regular corner features, and show only one photoluminescence emission band at 3.0 eV. The associated excitation spectrum indicates electronic excitations above the energy required to excite regular oxygen-terminated CaO corners. It is concluded that in the case of morphologically well-defined MgO nanocubes variations in the next coordination of oxygen-terminated corners can effectively be probed by photoluminescence spectroscopy and thus allows for discrimination between 3-coordinated surface O(2-) in regular corner sites and kinks.     

First-principles local density approximation (generalized gradient approximation) +U study of catalytic CenOm clusters: U value differs from bulk

Ceria possesses strong catalytic properties for CONO(x) removal and H(2) production. Clusters often show more intriguing functionalities than their bulk counterparts. Here, the geometric and electronic structures of Ce(n)O(m) (n=1-4,m=2n-1,2n) clusters are studied for the first time using the projected augmented wave method in density functional theory with detailed assessment of the exchange-correlation functional and the Hubbard parameter U. We note that the U value strongly affects the electronic structures of the oxygen-deficient Ce(n)O(2n-1) clusters, though less so on the stoichiometric Ce(n)O(2n). Furthermore, the local density approximation (LDA)+U method is more accurate than the generalized gradient approximation+U in describing the localization of the 4f electrons of the Ce(n)O(m) clusters. The calculated vibration frequency of the CeO molecule with the LDA+U (U=4 eV) is 818.4 cm(-1), in close agreement with experimental values of 820-825 cm(-1) for the low lying states. Different optimal U values were noted for the ceria cluster (4 eV) and its bulk (6 eV), due to quantum-size and geometric effects. The largely reduced formation energy of an oxygen vacancy indicates that the catalytic effect of the Ce(n)O(m) clusters are far greater than bulk CeO(2).     

Proton transfer dynamics of the reaction H3O(+)(NH3,H2O)NH4+ studied using the crossed molecular beam technique

The proton transfer reaction of H3O+ and NH3 was studied using the crossed molecular beam technique at relative energies of 0.41, 0.81, and 1.27 eV. At all three energies, the center-of-mass flux distribution of the product ion NH4+ exhibits sharply asymmetry, and the maximum is close to the velocity and direction of the precursor ammonia beam. The reaction transforms almost all of the 1.69 eV exothermicity into internal excitation of the products at all three collision energies. At the lowest collision energy of 0.41 eV, nearly 77% of the total energy appears in NH4+ internal excitation. However, almost 100% of the incremental translational energy in the two higher-energy experiments appears in the product translational energy. Such an observation provides a classic example of the "induced repulsive energy release" mechanism that is expected to be operative on the highly skewed potential energy surfaces characteristic of the heavy+light-heavy mass combination. These results indicate that the proton transfer proceeds through a direct reaction mechanism; a Rice-Ramsperger-Kassel-Marcus theory calculation shows that the lifetime of the intermediate complex [NH3-H-H2O]+ is about 100 fs. Proton transfer occurs early on the reaction coordinate, when the incipient N-H bond is extended, and results in highly vibrationally excited NH4+ products, with excitation primarily in N-H stretching modes.     

可见光响应光催化剂K4Ce2Ta10O30、K4Ce2Nb10O30及其固溶体的电子结构

基于密度泛函理论(DFT), 采用平面波赝势(PWP)以及广义梯度近似(GGA)方法, 对可见光响应的光催化剂K4Ce2Ta10O30、K4Ce2Nb10O30及其固溶体进行电子结构的第一性原理计算. 结果表明, 光催化剂K4Ce2Ta10O30和K4Ce2Nb10O30的导带分别主要由Ta 5d和Nb 4d组成, 处于高能级的电子未占据态的Ce 4f与其有很明显的重迭, 但由于其高度局域特性,不能很好地参与光生电子在导带中的传导, 从而对光催化活性的贡献很小;而其价带则由O 2p与Ta 5d (Nb 4d)的杂化轨道组成, 同时电子占据态的Ce 4f对价带也有一定的贡献, 各个电子轨道对能带结构的贡献决定了该系列可见光响应光催化剂的物理化学和光催化特性. 固溶体系列中随着Nb含量的增加, 其吸收光谱依次红移, 带隙变窄, 导带底变低, 光生电子的还原能力降低. 在固溶体K4Ce2Ta10-xNbxO30(x=2, 5, 8)中, 由于Ce 4f轨道对价带顶的贡献相对较小, 固溶体的价带顶低于K4Ce2Ta10O30、K4Ce2Nb10O30的价带顶, 光生空穴的氧化能力相对较强. 该系列光催化剂的电子结构分析结果与光催化水分解的活性实验结果有很好的一致性.     

Theoretical Studies of H＿2O Adsorption on Pure and Pt Loading TiO＿2（Rutile）（110） Surfaces

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Visible light photo-oxidation of model pollutants using CaCu3Ti4O12: an experimental and theoretical study of optical properties, electronic structure, and selectivity

Charge transfer between metal ions occupying distinct crystallographic sublattices in an ordered material is a strategy to confer visible light absorption on complex oxides to generate potentially catalytically active electron and hole charge carriers. CaCu3Ti4O12 has distinct octahedral Ti4+ and square planar Cu2+ sites and is thus a candidate material for this approach. The sol?gel synthesis of high surface area CaCu3Ti4O12 and investigation of its optical absorption and photocatalytic reactivity with model pollutants are reported. Two gaps of 2.21 and 1.39 eV are observed in the visible region. These absorptions are explained by LSDA+U electronic structure calculations, including electron correlation on the Cu sites, as arising from transitions from a Cu-hybridized O 2p-derived valence band to localized empty states on Cu (attributed to the isolation of CuO4 units within the structure of CaCu3Ti4O12) and to a Ti-based conduction band. The resulting charge carriers produce selective visible light photodegradation of 4-chlorophenol (monitored by mass spectrometry) by Pt-loaded CaCu3Ti4O12 which is attributed to the chemical nature of the photogenerated charge carriers and has a quantum yield comparable with commercial visible light photocatalysts.