N- and P-channel transport behavior in thin film transistors based on tricyanovinyl-capped oligothiophenes

We report the structural and electrical characterization of thin films of organic semiconductor molecules consisting of an oligothiophene core capped with electron-withdrawing tricyanovinyl (TCV) groups. X-ray diffraction and atomic force microscopy of evaporated films of three different TCV-capped oligothiophenes showed that the films were highly crystalline. Electrical transport was measured in thin film transistors employing silver source and drain contacts and channel probes to correct for contact resistance. Three compounds exhibited n-channel (electron) conduction consistent with cyclic voltametry data that indicated they undergo facile reduction. Maximum electron mobilities were 0.02 cm2/V.s with an on/off current ratio of 10(6). A fourth end-capped molecule, TCV-6T-TCV, which had six thiophene rings, exhibited both p- and n-channel transport. Overall, these results confirm that substitution of oligothiophene cores with electron-withdrawing groups is a useful strategy to achieve electron-transporting materials.     

Annealing-free high-mobility diketopyrrolopyrrole-quaterthiophene copolymer for solution-processed organic thin film transistors

A donor-acceptor polymer semiconductor, PDQT, comprising diketopyrrolopyrrole (DPP) and β-unsubstituted quaterthiophene (QT) for organic thin film transistors (OTFTs) is reported. This polymer forms ordered layer-by-layer lamellar packing with an edge-on orientation in thin films even without thermal annealing. The strong intermolecular interactions arising from the fused aromatic DPP moiety and the DPP-QT donor-acceptor interaction facilitate the spontaneous self-assembly of the polymer chains into close proximity and form a large π-π overlap, which are favorable for intermolecular charge hopping. The well-interconnected crystalline grains form efficient intergranular charge transport pathways. The desirable chemical, electronic, and morphological structures of PDQT bring about high hole mobility of up to 0.97 cm(2)/(V·s) in OTFTs with polymer thin films annealed at a mild temperature of 100 °C and similarly high mobility of 0.89 cm(2)/(V·s) for polymer thin films even without thermal annealing.     

Organic thin film transistors from a soluble oligothiophene derivative containing thermally removable solubilizing groups

A symmetrical alpha,omega-substituted sexithiophene derivative containing thermally removable branched ester solubilizing groups has been prepared. These oligomers can be solution cast into thin films and then thermolyzed to remove the solubilizing group, leaving short pendant alkene groups on the oligomer. Device testing of thin film transistors shows an increase in hole mobility from 1 x 10-5 cm2/(V s) with on/off ratios of approximately 100 before thermolysis to 5 x 10-2 cm2/(V s) with on/off ratios >105 after thermolysis. This method offers an attractive route to easily processed and highly performing thiophene oligomers.     

Lamination method for the study of interfaces in polymeric thin film transistors

A method for the fabrication of polymeric thin-film transistors (TFTs) by lamination is described. Poly(dimethylsiloxane) stamps were used to delaminate thin films of semiconducting polymers from silicon wafers coated with a self-assembled monolayer (SAM) formed from octyltrichlorosilane. These supported films were laminated onto electrode structures to form coplanar TFTs. The fabrication process was used to make TFTs with poly(3-hexylthiophene), P3HT, and poly[5,5'-bis(3-dodecyl-2-thienyl)-2,2'-bithiophene], PQT-12. TFTs, where these polymers were laminated onto gate dielectrics coated with SAMs from octyltrichlorosilane, had effective field-effect mobilities of 0.03 and 0.005 cm2/(V s), respectively. TFTs where PQT-12 was laminated onto gate dielectrics that were not coated with a SAM also had mobility of 0.03 cm2/(V s). In contrast, TFTs fabricated by spin-coating PQT-12 onto the same structure had mobilities ranging from 10-3 to 10-4 cm2/(V s). These results suggest that the lower mobilities of polymer TFTs made with hydrophilic gate dielectrics are caused by molecular ordering in the semiconducting film rather than electronic effects of dipolar groups at the interface.     

Siloxane-terminated solubilizing side chains: bringing conjugated polymer backbones closer and boosting hole mobilities in thin-film transistors

We introduce a novel siloxane-terminated solubilizing group and demonstrate its effectiveness as a side chain in an isoindigo-based conjugated polymer. An average hole mobility of 2.00 cm(2) V(-1) s(-1) (with a maximum mobility of 2.48 cm(2) V(-1) s(-1)), was obtained from solution-processed thin-film transistors, one of the highest mobilities reported to date. In contrast, the reference polymer with a branched alkyl side chain gave an average hole mobility of 0.30 cm(2) V(-1) s(-1) and a maximum mobility of 0.57 cm(2) V(-1) s(-1). This is largely explained by the polymer packing: our new polymer exhibited a π-π stacking distance of 3.58 ?, while the reference polymer showed a distance of 3.76 ?.     

X-ray scattering study of thin films of poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene)

Poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene), PBTTT, is a semiconducting polymer that forms thin film transistors (TFTs) with high field effect mobility on silicon dioxide dielectrics that are treated with alkyltrichlorosilanes ( approximately 0.2 to 0.5 cm2/V s) but forms TFTs with poor mobility on bare silicon dioxide (<0.005 cm2/V s). The microstructure of spin-coated thin films of PBTTT on these surfaces was studied using synchrotron X-ray diffraction and atomic force microscopy. PBTTT crystallizes with lamellae of pi-stacked polymer chains on both surfaces. The crystalline domains are well-oriented relative to the substrate in the as-spun state and become highly oriented and more ordered with thermal annealing in the liquid crystalline mesophase. Although the X-ray scattering from PBTTT is nearly identical on both surfaces, atomic force microscopy showed that the domain size of the crystalline regions depends on the substrate surface. These results suggest that electrical transport in PBTTT films is strongly affected by the domain size of the crystalline regions and the disordered regions between them.     

A conjugated polyazine containing diketopyrrolopyrrole for ambipolar organic thin film transistors

A π-conjugated polyazine containing diketopyrrolopyrrole (DPP) moiety, PDBTAZ, is synthesized through a simple condensation polymerization. PDBTAZ is found to be a high-performance ambipolar semiconductor in organic thin film transistors (OTFTs), showing an electron mobility of up to 0.41 cm(2) V(-1) s(-1) and a hole mobility of up to 0.36 cm(2) V(-1) s(-1).     

High-mobility field-effect transistors from large-area solution-grown aligned C60 single crystals

Field-effect transistors based on single crystals of organic semiconductors have the highest reported charge carrier mobility among organic materials, demonstrating great potential of organic semiconductors for electronic applications. However, single-crystal devices are difficult to fabricate. One of the biggest challenges is to prepare dense arrays of single crystals over large-area substrates with controlled alignment. Here, we describe a solution processing method to grow large arrays of aligned C(60) single crystals. Our well-aligned C(60) single-crystal needles and ribbons show electron mobility as high as 11 cm(2)V(-1)s(-1) (average mobility: 5.2 ± 2.1 cm(2)V(-1)s(-1) from needles; 3.0 ± 0.87 cm(2)V(-1)s(-1) from ribbons). This observed mobility is ~8-fold higher than the maximum reported mobility for solution-grown n-channel organic materials (1.5 cm(2)V(-1)s(-1)) and is ~2-fold higher than the highest mobility of any n-channel organic material (~6 cm(2)V(-1)s(-1)). Furthermore, our deposition method is scalable to a 100 mm wafer substrate, with around 50% of the wafer surface covered by aligned crystals. Hence, our method facilitates the fabrication of large amounts of high-quality semiconductor crystals for fundamental studies, and with substantial improvement on the surface coverage of crystals, this method might be suitable for large-area applications based on single crystals of organic semiconductors.     

An asymmetric oligomer based on thienoacene for solution processed crystal organic thin-film transistors

A novel thienoacene-based conjugated oligomer, i.e.BTTT-T-C12, was designed and synthesized. Its highly asymmetric structural feature enables the preparation of two-dimensional single-crystalline thin films in millimetre size and ~100 nm thick by a solution processing method directly on the Si/SiO(2) substrate. Single crystal organic thin film transistors exhibit a mobility of 0.70 cm(2) V(-1) s(-1) and an on/off ratio of 5.7 × 10(4).     

2,5-二(2-菲基)-[3,2-b]并二噻吩的合成、表征及在有机薄膜晶体管中的应用

本文合成了2,5-二(2-菲基)-[3,2-b]并二噻吩(PhTT), 表征了其基本的物理和化学性质, 制备了相应的有机薄膜晶体管.     

Low-bandgap conjugated polymers based on benzodipyrrolidone with reliable unipolar electron mobility exceeding 1 cm~2 V~(-1) s~(-1)

The employment of an intrinsic quinoidal building block, benzodipyrrolidone(BDP), on constructing conjugated polymers(PBDP-2F and PBDP-2CN) with high electron mobility and unipolar transport characteristic in polyethylenimine ethoxylated(PEIE) modified organic field-effect transistors(OFETs) is reported. The intrinsic quinoidal characteristic and excellent coplanarity of BDP can lower the lowest unoccupied molecular orbital(LUMO) levels and improve ordered interchain packing of the resulting polymers in solid states, which are favorable for electron-injection and transport. By using PEIE as the interlayer to block the hole injection, unipolar n-type transport characteristics with high electron mobility of 0.58 and 1.01 cm~2 V~(-1) s~(-1) were achieved by the OFETs based on PBDP-2F and PBDP-2CN, respectively. More importantly, the extracted mobilities are highly reliable with the reliability factor of above 80%. To the best of our knowledge, PBDP-2CN is the very first quinoid-based conjugated polymer with reliable electron mobility exceeding 1 cm~2 V~(-1) s~(-1). This work represents a significant step in exploring intrinsic quinoidal CPs for application in n-channel OFETs and logic complementary circuits.     

Diketopyrrolopyrrole-containing quinoidal small molecules for high-performance, air-stable, and solution-processable n-channel organic field-effect transistors

We report the synthesis, characterization, and application of a novel series of diketopyrrolopyrrole (DPP)-containing quinoidal small molecules as highly efficient n-type organic semiconductors in thin film transistors (TFTs). The first two representatives of these species exhibit maximum electron mobility up to 0.55 cm(2) V(-1) s(-1) with current on/current off (I(on)/I(off)) values of 10(6) for 1 by vapor evaporation, and 0.35 cm(2) V(-1) s(-1) with I(on)/I(off) values of 10(5)-10(6) for 2 by solution process in air, which is the first demonstration of DPP-based small molecules offering only electron transport characteristics in TFT devices. The results indicate that incorporation of a DPP moiety to construct quinoidal architecture is an effective approach to enhance the charge-transport capability.     

Bithiophene-imide-based polymeric semiconductors for field-effect transistors: synthesis, structure-property correlations, charge carrier polarity, and device stability

Developing new high-mobility polymeric semiconductors with good processability and excellent device environmental stability is essential for organic electronics. We report the synthesis, characterization, manipulation of charge carrier polarity, and device air stability of a new series of bithiophene-imide (BTI)-based polymers for organic field-effect transistors (OFETs). By increasing the conjugation length of the donor comonomer unit from monothiophene (P1) to bithiophene (P2) to tetrathiophene (P3), the electron transport capacity decreases while the hole transport capacity increases. Compared to the BTI homopolymer P(BTimR) having an electron mobility of 10(-2) cm(2) V(-1) s(-1), copolymer P1 is ambipolar with balanced hole and electron mobilities of ～10(-4) cm(2) V(-1) s(-1), while P2 and P3 exhibit hole mobilities of ～10(-3) and ～10(-2) cm(2) V(-1) s(-1), respectively. The influence of P(BTimR) homopolymer M(n) on film morphology and device performance was also investigated. The high M(n) batch P(BTimR)-H affords more crystalline film microstructures; hence, 3× increased electron mobility (0.038 cm(2) V(-1) s(-1)) over the low M(n) one P(BTimR)-L (0.011 cm(2) V(-1) s(-1)). In a top-gate/bottom-contact OFET architecture, P(BTimR)-H achieves a high electron mobility of 0.14 cm(2) V(-1) s(-1), only slightly lower than that of state-of-the-art n-type polymer semiconductors. However, the high-lying P(BTimR)-H LUMO results in minimal electron transport on exposure to ambient. Copolymer P3 exhibits a hole mobility approaching 0.1 cm(2) V(-1) s(-1) in top-gate OFETs, comparable to or slightly lower than current state-of-the-art p-type polymer semiconductors (0.1-0.6 cm(2) V(-1) s(-1)). Although BTI building block incorporation does not enable air-stable n-type OFET performance for P(BTimR) or P1, it significantly increases the OFET air stability for p-type P2 and P3. Bottom-gate/top-contact and top-gate/bottom-contact P2 and P3 OFETs exhibit excellent stability in the ambient. Thus, P2 and P3 OFET hole mobilities are almost unchanged after 200 days under ambient, which is attributed to their low-lying HOMOs (>0.2 eV lower than that of P3HT), induced by the strong BTI electron-withdrawing capacity. Complementary inverters were fabricated by inkjet patterning of P(BTimR)-H (n-type) and P3b (p-type).     

High performance n-type single crystalline transistors of naphthalene bis(dicarboximide) and their anisotropic transport in crystals

High-performance n-type organic single crystal transistors of a naphthalene diimide are demonstrated. The accomplished transistors exhibit electron mobility as high as 0.7 cm(2) V(-1) s(-1). The anisotropic charge transport in the elongated hexagonal crystals of the naphthalene diimide is also explored. The transport anisotropy along different directions is at least 1.6 (mobility ratio).     

Charge carrier transport properties in polymer liquid crystals containing oxadiazole and amine moieties in the same side chain

Steady-state and transient photocurrent measurements were carried out to study the charge carrier transport properties of polymer liquid crystal (LC) containing oxadiazole (OXD) and amine moieties in the same side chain. The steady-state photocurrent measurement with asymmetric electrodes of ITO and Al and a short penetration depth of the illumination light indicated that both electrons and holes can be transported in this film. The transient hole photocurrent observed by time-of-flight (TOF) experiments was dispersive at room temperature. The hole drift mobility significantly depended on temperature and electric field and was determined to be 6.1 x 10(-8) cm2/Vs at a field of 9.1 x 10(5) V/cm. According to the disorder formalism, the Gaussian width of the density of states was determined to be 170 meV for holes. Despite the indication of possible electron transport in this film, we could not determine the electron mobility by TOF experiments due to strong dispersive photocurrent. We discuss the present charge transport properties of the film in relation to a large dipole attributed to an electrical push-pull structure of p-dimethylaminophenyl-substitited OXD moiety in polymer LC and its electroluminescent properties.     

Unusual nondispersive ambipolar carrier transport and high electron mobility in amorphous ter(9,9-diarylfluorene)s

Nondispersive ambipolar carrier transport with comparably high electron and hole mobilities for amorphous molecular solids that are composed of only a single type of chromophores was observed for the first time in amorphous ter(9,9-diarylfluorene)s. High hole and electron mobilities over 10-3 cm2/(V.s) can be achieved with these terfluorenes. In particular, the electron mobility observed represents the highest ever reported for amorphous molecular solids.     

Air-stable n-type organic field-effect transistors based on solution-processable, electronegative oligomers containing dicyanomethylene-substituted cyclopenta[b]thiophene

Solution-processable, electronegative, π-conjugated systems containing dicyanomethylene-substituted cyclopenta[b]thiophene were synthesized as potential active materials for air-stable n-type organic field-effect transistors (OFETs). Electrochemical measurements revealed that these compounds exhibited electrochemical stability and that the lowest unoccupied molecular orbital (LUMO) had an energy level less than -4.0 eV. Flash-photolysis time-resolved microwave conductivity (FP-TRMC) measurements were performed, and the value of intradomain electron mobility was determined to be as high as 0.1 cm(2) V(-1) s(-1) . The OFETs were fabricated by spin-coating thin films of the compounds as an active layer. The electron mobility of the OFETs was 3.5×10(-3) cm(2) V(-1) s(-1) in vacuum. Furthermore, electron mobility of the same order of magnitude and stable characteristics were obtained under air-exposed conditions. X-ray diffraction measurements of the spin-coated thin films revealed the difference of molecular arrangements depending on the inner conjugated units. Atomic force microscopy measurements of crystalline-structured films exhibited the formation of grains. The accomplishment of air-stability was attributed to the combined effect of the low-lying LUMO energy level and the molecular arrangements in the solid state, avoiding both the quenching of electron carriers and the intrusion of oxygen and/or moisture.     

Electron transport in solution-grown TIPS-pentacene single crystals: Effects of gate dielectrics and polar impurities

The n-channel behavior has been occasionally reported in the organic field-effect transistors (OFETs) that usually exhibit p-channel transport only. Reconfirmation and further examination of these unusual device performances should deepen the understanding on the electron transport in organic semiconductors. 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-pentacene), a widely examined p-channel material as Au is used for source-drain electrodes, has recently been reported to exhibit electron transport when grown from non-polar solvent on divinyltetramethyldisiloxanebis (benzocyclobutene) (BCB) dielectric, spurring the study on this unusual electron transport. This paper describes FET characteristics of solution-grown TIPS-pentacene single crystals on five polymer gate dielectrics including polystyrene (PS), poly(methyl methacrylate) (PMMA), poly(4-vinyl phenol) (PVP), poly(vinyl alcohol) (PVA) and poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) (P(VDF-TrFE-CFE)). In addition to the p-channel behavior, electron transport occurs in the crystals on PMMA, PS, thick PVA (40 nm) and a bilayer dielectric of PMMA on P(VDF-TrFE-CFE), while does not on PVP and thin PVA (2 nm). The two distinct FET characteristics are consistent with the previous reported trap effect of hydroxyl groups (in PVP and PVA) and reduced injection barrier by Na⁺ ions (as impurity in PVA). The highest electron mobility of 0.48 cm² V^-1 s^-1 has been achieved in the crystals on PMMA. Furthermore, the electron transport is greatly attenuated after the crystals are exposed to the vapor of a variety of polar solvents and the attenuated electron transport partially recovers if the crystals are heated, indicating the adverse effect of polar impurities on electron transport. By reconfirming the n-channel behavior in the OFETs based on TIPS-pentacene, this work has implications for the design of n-channel and ambipolar OFETs.     

基于含硫芳杂稠环化合物的可溶性共轭齐聚物的合成、表征及其在有机薄膜晶体管中的应用

设计并合成了4个基于含硫芳杂稠环化合物的可溶性共轭齐聚物,即以3-十一烷基苯并[d,d’]噻吩并[3,2-b;4,5-b ’]并二噻吩(BTTT)为末端芳香单元,噻吩(T)、二噻吩(bT)、N-十二烷基-二噻吩并[3,2-b]吡咯(TP)或2,5-双(3-十二烷基噻吩)[3,2-b]并二噻吩 (qT)为中间芳香单元的...     

Microstructure evolution and device performance in solution-processed polymeric field-effect transistors: the key role of the first monolayer

Probing the role of the first monolayer in the evolution of the film polymer microstructure is essential for the fundamental understanding of the charge carrier transport in polymeric field-effect transistors (FETs). The monolayer and its subsequent microstructure of a conjugated polymer [poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene), PBTTT] film were fabricated via solution deposition by tuning the dip-coating speed and were then studied as accumulation and transporting layers in FETs. Investigation of the microstructure of the layers prepared at different coating velocities revealed that the monolayer serves as an important base for further development of the film. Significant improvement of the charge carrier transport occurs only at a critical multilayer network density that establishes the required percolation pathways for the charge carriers. Finally, at a low dip-coating speed, the polymer chains are uniaxially oriented, yielding pronounced structural anisotropy and high charge carrier mobilities of 1.3 cm(2) V(-1) s(-1) in the alignment direction.