High performance organic transistors and phototransistors based on diketopyrrolopyrrole-quaterthiophene copolymer thin films fabricated via low-concentration solution processing

Herein, highly crystalline diketopyrrolopyrrole-quaterthiophene copolymer thin films were achieved by a simple low-concentration solution processing with a little material waste, which exhibit efficient charge transport and optoelectronic properties for constructing high performance OFET and phototransistors.     

A conjugated polyazine containing diketopyrrolopyrrole for ambipolar organic thin film transistors

A π-conjugated polyazine containing diketopyrrolopyrrole (DPP) moiety, PDBTAZ, is synthesized through a simple condensation polymerization. PDBTAZ is found to be a high-performance ambipolar semiconductor in organic thin film transistors (OTFTs), showing an electron mobility of up to 0.41 cm(2) V(-1) s(-1) and a hole mobility of up to 0.36 cm(2) V(-1) s(-1).     

Zone-refinement effect in small molecule-polymer blend semiconductors for organic thin-film transistors

The blend films of small-molecule semiconductors with insulating polymers exhibit not only excellent solution processability but also superior performance characteristics in organic thin-film transistors (OTFTs) over those of neat small-molecule semiconductors. To understand the underlying mechanism, we studied triethylsilylethynyl anthradithiophene (TESADT) with small amounts of impurity formed by weak UV exposure. OTFTs with neat impure TESADT had drastically reduced field-effect mobility (<10(-5) cm(2)/(V s)), and a disappearance of the high-temperature crystal phase was observed for neat impure TESADT. However, the mobility of the blend films of the UV-exposed TESADT with poly(α-methylstyrene) (PαMS) is recovered to that of a fresh TESADT-PαMS blend (0.040 cm(2)/(V s)), and the phase transition characteristics partly return to those of fresh TESADT films. These results are corroborated by OTFT results on "aged" TIPS-pentacene. These observations, coupled with the results of neutron reflectivity study, indicate that the formation of a vertically phase-separated layer of crystalline small-molecule semiconductors allows the impurity species to remain preferentially in the adjacent polymer-rich layer. Such a "zone-refinement effect" in blend semiconductors effectively removes the impurity species that are detrimental to organic electronic devices from the critical charge-transporting interface region.     

Thiocyanate-capped nanocrystal colloids: vibrational reporter of surface chemistry and solution-based route to enhanced coupling in nanocrystal solids

Ammonium thiocyanate (NH(4)SCN) is introduced to exchange the long, insulating ligands used in colloidal nanocrystal (NC) synthesis. The short, air-stable, environmentally benign thiocyanate ligand electrostatically stabilizes a variety of semiconductor and metallic NCs in polar solvents, allowing solution-based deposition of NCs into thin-film NC solids. NH(4)SCN is also effective in replacing ligands on NCs after their assembly into the solid state. The spectroscopic properties of this ligand provide unprecedented insight into the chemical and electronic nature of the surface of the NCs. Spectra indicate that the thiocyanate binds to metal sites on the NC surface and is sensitive to atom type and NC surface charge. The short, thiocyanate ligand gives rise to significantly enhanced electronic coupling between NCs as evidenced by large bathochromic shifts in the absorption spectra of CdSe and CdTe NC thin films and by conductivities as high as (2 ± 0.7) × 10(3) Ω(-1) cm(-1) for Au NC thin films deposited from solution. NH(4)SCN treatment of PbTe NC films increases the conductivity by 10(13), allowing the first Hall measurements of nonsintered NC solids, with Hall effect mobilities of 2.8 ± 0.7 cm(2)/(V·s). Thiocyanate-capped CdSe NC thin films form photodetectors exhibiting sensitive photoconductivity of 10(-5) Ω(-1) cm(-1) under 30 mW/cm(2) of 488 nm illumination with I(photo)/I(dark) > 10(3) and form n-channel thin-film transistors with electron mobilities of 1.5 ± 0.7 cm(2)/(V·s), a current modulation of >10(6), and a subthreshold swing of 0.73 V/decade.     

Ultrahigh mobility in polymer field-effect transistors by design

In this article, the design paradigm involving molecular weight, alkyl substituents, and donor-acceptor interaction for the poly[2,6-(4,4-bis-alkyl-4H-cyclopenta[2,1-b;3,4-b']-dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)] (cyclopentadithiophene-benzothiadiazole) donor-acceptor copolymer (CDT-BTZ) toward field-effect transistors (FETs) with ultrahigh mobilities is presented and discussed. It is shown that the molecular weight plays a key role in improving hole mobilities, reaching an exceptionally high value of up to 3.3 cm(2) V(-1) s(-1). Possible explanations for this observation is highlighted in conjunction with thin film morphology and crystallinity. Hereby, it is found that the former does not change, whereas, at the same time, crystallinity improved with ever growing molecular weight. Furthermore, other important structural design factors such as alkyl chain substituents and donor-acceptor interaction between the polymer backbones potentially govern intermolecular stacking distances crucial for charge transport and hence for device performance. In this aspect, for the first time we attempt to shed light onto donor-acceptor interactions between neighboring polymer chains with the help of solid state nuclear magnetic resonance (NMR). On the basis of our results, polymer design principles are inferred that might be of relevance for prospective semiconductors exhibiting hole mobilities even exceeding 3 cm(2) V(-1) s(-1).     

Air-stable spin-coated naphthalocyanine transistors for enhanced chemical vapor detection

Air-stable organic thin-film transistor (OTFT) sensors fabricated using spin-cast films of 5,9,14,18,23,27,32,36-octabutoxy-2,3-naphthalocyanine (OBNc) demonstrated improved chemical vapor sensitivity and selectivity relative to vacuum-deposited phthalocyanine (H(2)Pc) OTFTs. UV-vis spectroscopy data show that annealed spin-cast OBNc films exhibit a red-shift in the OBNc Q-band λ(max) which is generally diagnostic of improved π-orbital overlap in phthalocyanine ring systems. Annealed OBNc OTFTs have mobilities of 0.06 cm(2) V(-1) s(-1), low threshold voltages (|V(th)| < 1 V), and on/off ratios greater than 10(6). These air-stable device parameters are utilized for sensing modalities which enhance the sensitivity and selectivity of OBNc OTFTs relative to H(2)Pc OTFTs. While both sensors exhibit mobility decreases for all analytes, only OBNc OTFTs exhibit V(th) changes for highly polar/nonpolar analytes. The observed mobility decreases for both sensors are consistent with electron donation trends via hydrogen bonding by basic analytes. In contrast, V(th) changes for OBNc sensors appear to correlate with the analyte's octanol-water partition coefficient, consistent with polar molecules stabilizing charge in the organic semiconductor film. The analyte induced V(th) changes for OBNc OTFTs can be employed to develop selective multiparameter sensors which can sense analyte stabilized fixed charge in the film.     

X-ray scattering study of thin films of poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene)

Poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene), PBTTT, is a semiconducting polymer that forms thin film transistors (TFTs) with high field effect mobility on silicon dioxide dielectrics that are treated with alkyltrichlorosilanes ( approximately 0.2 to 0.5 cm2/V s) but forms TFTs with poor mobility on bare silicon dioxide (<0.005 cm2/V s). The microstructure of spin-coated thin films of PBTTT on these surfaces was studied using synchrotron X-ray diffraction and atomic force microscopy. PBTTT crystallizes with lamellae of pi-stacked polymer chains on both surfaces. The crystalline domains are well-oriented relative to the substrate in the as-spun state and become highly oriented and more ordered with thermal annealing in the liquid crystalline mesophase. Although the X-ray scattering from PBTTT is nearly identical on both surfaces, atomic force microscopy showed that the domain size of the crystalline regions depends on the substrate surface. These results suggest that electrical transport in PBTTT films is strongly affected by the domain size of the crystalline regions and the disordered regions between them.     

Extended Conjugated Donor–Acceptor Molecules with E‐(1,2‐Difluorovinyl) and Diketopyrrolopyrrole (DPP) Moieties toward High‐Performance Ambipolar Organic Semiconductors

Two diketopyrrolopyrrole (DPP)‐based donor–acceptor (D–A) conjugated molecules, DPP‐F and DPP‐2F, which contain E‐(1,2‐difluorovinyl) moieties, are reported. The LUMO energies of DPP‐F and DPP‐2F were estimated to be ?3.49 and ?3.70 eV, respectively, based on their redox potentials and absorption spectral data; these values were clearly lowered because of the incorporation of electron‐withdrawing E‐(1,2‐difluorovinyl) moieties. Organic field‐effect transistors (OFETs) with thin films of DPP‐F and DPP‐2F were successfully fabricated with conventional techniques. Based on the respective transfer and output characteristics measured in an inert atmosphere, thin films of DPP‐2F display ambipolar semiconducting behavior with hole and electron mobilities reaching 0.42 and 0.80 cm² V^?1 s^?1, respectively. The as‐prepared OFET of DPP‐2F already shows high hole and electron mobilities that are not influenced remarkably by thermal annealing. For thin films of DPP‐F, only p‐type semiconducting behavior was observed in both an inert atmosphere and air, and the hole mobility increased to 0.1 cm² V^?1 s^?1 after thermal annealing. XRD and AFM studies were performed with thin films of DPP‐F and DPP‐2F after annealing at different temperatures.     

Conducting AFM and 2D GIXD studies on pentacene thin films

Among all organic semiconductors, pentacene has been shown to have the highest thin film mobility reported to date. The crystalline structure of the first few pentacene layers deposited on a dielectric substrate is strongly dependent on the dielectric surface properties, directly affecting the charge mobility of pentacene thin film OTFTs. Herein, we report that there is a direct correlation between the crystalline structure of the initial submonolayer of a pentacene film and the mobility of the corresponding 60-nm-thick films showing terrace-like structure, as confirmed by 2D grazing-incidence X-ray diffraction and atomic force microscopy. Specifically, multilayered pentacene films, grown from single crystal-like faceted islands on HMDS-treated surface, have shown much higher charge mobility (mu = 3.4 +/- 0.5 cm2/Vs) than those with polycrystalline dendritic islands (mu = 0.5 +/- 0.15 cm2/Vs) on OTS-treated ones.     

Synergistic Effects of Solvent Vapor Assisted Spin-coating and Thermal Annealing on Enhancing the Carrier Mobility of Poly(3-hexylthiophene) Field-effect Transistors

Poly(3-hexylthiophene)(P3 HT) thin films, obtained by normal spin-coating and solvent vapor assisted spin-coating(SVASP) before and after thermal annealing(TA), and the corresponding devices were prepared to unravel the microstructure-property relationship, which is of great importance for the development of organic electronics. When SVASP-TA films were used as the active layers of the organic field-effect transistors,a hole mobility up to 0.38 cm~2·V~(–1)·s~(–1) was achieved. This mobility was one of the highest values and one order of magnitude higher than that of the normal spin-coating films based transistors. The relationship between the microstructure and the device performance was fully investigated by UV-Vis absorption spectra, grazing incident X-ray diffraction(GIXD), and atomic force microscopy(AFM). The impressive mobility was attributed to the high crystallinity and ordered molecule packing, which stem from the synergistic effects of SVASP and thermal annealing.     

Novel Conjugated Polymers Based on Dithieno[3,2‐b:6,7‐b]carbazole for Solution Processed Thin‐Film Transistors

Two conjugated polymers (CPs) P‐tCzC12 and P‐tCzC16 comprising alternating dithieno[3,2‐b:6,7‐b]carbazole and 4,4′‐dihexadecyl‐2,2′‐bithiophene units have been designed and synthesized. Upon thermal annealing, they can form ordered thin films in which the polymer backbones dominantly adopted an edge‐on orientation respective to the substrate with a lamellar spacing of ≈24 Å and a π‐stacking distance of ≈3.7 Å. Organic thin‐film transistors (OTFTs) were fabricated by solution casting. A hole mobility of 0.39 cm² V⁻¹s⁻¹ has been demonstrated with P‐tCzC16. This value is the highest among the CPs containing heteroacenes larger than 4 rings.     

Is a polymer semiconductor having a “perfect” regular structure desirable for organic thin film transistors?

This study utilized high temperature NMR and matrix-assisted laser desorption/ionization time-of-flight (MALDI-ToF) mass spectrometry to reveal that appreciable amounts of structural defects are present in the diketopyrrolopyrrole (DPP)–quaterthiophene copolymers (PDQT) synthesized by the Stille coupling polymerization with Pd(PPh₃)₂Cl₂, Pd₂(dba)₃/P(o-tol)₃, and Pd(PPh₃)₄ catalyst systems. It was proposed that these structural defects were produced via homocoupling side reactions of the C–Br bonds and the organostannane species. Model Stille coupling reactions further substantiated that the amount of structural defects are catalyst-dependent following the order of Pd(PPh₃)₂Cl₂ > Pd₂(dba)₃/P(o-tol)₃ > Pd(PPh₃)₄. To verify the structural assignments, “perfect” structurally regular PDQT polymers were prepared using Yamamoto coupling polymerization. When compared to the structurally regular polymers, the polymers containing defects exhibited notable redshifts in their absorption spectra. Surprisingly, the “perfect” structurally regular polymers showed poor molecular ordering in thin films and very low charge transport performance as channel semiconductors in organic thin film transistors (OTFTs). On the contrary, all the “defected” polymers exhibited much improved molecular ordering and significantly higher charge carrier mobility.     

Control of ambipolar thin film architectures by co-self-assembling oligo(p-phenylenevinylene)s and perylene bisimides

Control of thin film morphology by self-assembly of, respectively, p-type oligo(p-phenylenevinylene)s (OPV)s and n-type perylenebisimides (PBI)s in solution prior to processing, results in film architectures consisting of uniform rodlike domains as shown by atomic force microscopy. Such films from self-assembled molecules show superior charge-carrier mobility in comparison with films processed from molecular dissolved molecules. Moreover, connecting the OPV and PBI building blocks through hydrogen-bonding interactions creates dyad complexes that cofacially stack in apolar solvents. Ambipolar field-effect transistors constructed from these dyad complexes show two independent pathways for charge transport. In strong contrast, processing of OPV and PBI, that are not connected by hydrogen bonds, form charge transfer donor-acceptor complexes that show no mobility in field-effect transistors presumably due to an unfavorable supramolecular organization.     

High electron mobility in ladder polymer field-effect transistors

Field-effect mobility of electrons as high as 0.1 cm2/(V s) is observed in n-channel thin film transistors fabricated from a solution spin-coated conjugated ladder polymer, poly(benzobisimidazobenzophenanthroline) (BBL), under ambient air conditions. This is the highest electron mobility observed to date in a conjugated polymer semiconductor. Comparative studies of n-channel thin film transistors made from a structurally similar nonladder conjugated polymer BBB gave an electron mobility of 10-6 cm2/(V s). These results demonstrate that electron transport can be as facile as hole transport in conjugated polymer semiconductors and that ladder architecture of a conjugated polymer can substantially enhance charge carrier mobility.     

High performance weak donor-acceptor polymers in thin film transistors: effect of the acceptor on electronic properties, ambipolar conductivity, mobility, and thermal stability

We have studied the electronic, physical, and transistor properties of a family of donor-acceptor polymers consisting of diketopyrrolopyrrole (DPP) coupled with different accepting companion units in order to determine the effects of donor-acceptor interaction. Using the electronically neutral benzene (B), the weakly accepting benzothiadiazole (BT), and the strongly accepting benzobisthiadiazole (BBT), the accepting strength of the companion unit was systematically modulated. All polymers exhibited excellent transistor performance, with mobilities above 0.1 cm(2)V(-1)s(-1), even exceeding 1 cm(2)V(-1)s(-1) for one of the BBT-containing polymers. We find that the BBT is the strongest acceptor, enabling the BBT-containing polymers to be strongly ambipolar. The BBT moiety also strengthens interchain interactions, which provides higher thermal stability and performance for transistors with BBT-containing polymers as the active layer.     

Thin film organic transistors from air-stable heteroarenes: anthra[1,2-b:4,3-b':5,6-b':8,7-b']tetrathiophene derivatives

A facile synthesis of air-stable anthra[1,2-b:4,3-b':5,6-b':8,7-b']tetrathiophene derivatives 1a and 1b has been developed for applications in organic thin film transistors. Both molecules tend to self-associate through pi-pi stacking in solution and in different films. The hole mobility of 0.012 cm2 V(-1) s(-1) is obtained from 1a due to morphology changes in films from less ordered to highly ordered structures after thermal annealing. Good performance remained persistent over a period of 14 days, indicating the high stability of such transistors.     

Nafion基氧化还原聚合物在空气中的电荷传输性能

利用三明治电池和伏安法测试了不同制备条件的Nafion基氧化还原聚合物膜在空气中的电荷传输性能. 研究结果表明, 混合适量聚乙二醇(PEG)的Nafion基金属联吡啶配合物{Nafion[M(bpy)2+3, PEG](M=Ru, Fe)}膜的表观电荷传递扩散系数(Dct)达到10-6-10-7 cm2·s-1 , 电子或空穴迁移率(μ)达到10-4-10-5 cm2·V-1·s-1. 在导电玻璃(ITO)电极与Nafion基氧化还原聚合物膜界面引入一层导电聚苯胺(PANI)后, 降低了其接触电阻, 使氧化还原聚合物膜的Dct提高至10-5-10-6 cm2·s-1, μ提高至10-3-10-4 cm2·V-1·s-1, 且工作电流提高了近两个数量级. 该固态氧化还原聚合物膜的性能比较稳定, 在空气中放置30天后其Dct和μ降低得很少.     

Organic semiconducting materials from sulfur-hetero benzo[k]fluoranthene derivatives: synthesis, photophysical properties, and thin film transistor fabrication

A new family of air-stable sulfur-hetero oligoarenes based on the benzo[k]fluoranthene unit has been facilely developed as the active materials for thin film organic field-effect transistors. The Diels-Alder reaction between cyclopentadienone 1 and 2,2'-(ethyne-1,2-diyl)bisthiophene followed by decarbonylation afforded fluoranthene derivative 2. After bromination and subsequent substitution through Suzuki coupling reaction, the FeCl3-oxidative cyclization produced sulfur-hetero benzo[k]fluoranthene derivatives 8-12. In dilute chloroform solution, the absorption and emission behaviors of 2 and 4-7 showed characteristic features of the fluoranthene units, while their emission lambda(max) red-shifted with an increase of the effective conjugation length. The steady state absorption and emission spectra of these newly synthesized compounds were thoroughly investigated and discussed. Thin film organic field-effect transistors (OFETs) using 8-11 as active materials were fabricated in a "top contact" configuration. Substituents at the skeleton play an important role in the film morphologies, which lead to different mobilities, while the charge mobilities of 8-11 from OFETs were improved after thermal annealing of the thin films. A carrier mobility as high as 0.083 cm(2) V(-1) s(-1) and current on/off ratio of 10(6) were achieved through vacuum-deposited film followed by the thermal annealing process from 11.     

Efficient reduction of graphene oxide catalyzed by copper

We report that copper thin films deposited on top of graphene oxide (GO) serve as an effective catalyst to reduce GO sheets in a diluted hydrogen environment at high temperature. The reduced GO (rGO) sheets exhibit higher effective field-effect hole mobility, up to 80 cm(2) V(-1) s(-1), and lower sheet resistance (13 kΩ □(-1)) compared with those reduced by reported methods such as hydrazine and thermal annealing. Raman and XPS characterizations are addressed to study the reduction mechanism on graphene oxide underneath copper thin films. The level of reduction in rGO sheets is examined by Raman spectroscopy and it is well correlated with hole mobility values. The conductivity enhancement is attributed to the growth of the graphitic domain size. This method is not only suitable for reduction of single GO sheets but also applicable to lower the sheet resistance of Langmuir-Blodgett assembled GO films.     

A structurally ordered thiophene-thiazole copolymer for organic thin-film transistors

This paper reports a new donor-acceptor copolymer semiconductor, PTBTh, comprising bithiophene and bithiazole where the regular coplanar structure and the intramolecular charge transfer are expected to increase the opportunity for --- stacking and charge transport. The AFM image shows lamellar stacking of the polymer on the surface. The field-effect transistor (FET) properties of PTBTh have been evaluated by a bottom-contact/bottom-gate TFT configuration. The device showed a high hole mobility of 1.14×10-2 cm2 V-1 s-1 and a current on/off ratio of 3×105 with the polymer thin film annealed at a mild temperature of 120 ℃ when measured under ambient conditions.