利用Pd催化合成单晶GaN纳米线的光学特性(英文)

基于金属元素钯具有的催化特性,采用射频磁控溅射方法,在Si(111)衬底上沉积Pd:Ga2O3薄膜,然后在950℃下对薄膜进行氨化,制备出大量GaN纳米线.采用扫描电子显微镜(SEM)、X射线衍射(XRD)、透射电子显微镜(TEM)和高分辨透射电子显微镜(HRTEM)等技术手段对样品的结构、形貌和成分进行分析.结果表明,制备的样品为具有六方纤锌矿结构的单晶GaN纳米线,直径在20-60nm范围内,长度为几十微米,表面光滑无杂质,结晶质量较高.用光致发光光谱对样品的发光特性进行测试,分别在361.1、388.6和426.3nm处出现三个发光峰,且与GaN体材料相比近带边紫外发光峰发生了较弱的蓝移.对GaN纳米线的生长机制也进行了简单的讨论.     

Catalytic synthesis and photoluminescence of gallium nitride nanowires

Single crystalline wurzite GaN nanowires were successfully synthesized on the NiO catalyzed alumina substrate through a simple thermal chemical vapor deposition method. The mixture of Ga and GaN powder was used as the source material of Ga for synthesizing GaN nanowires. The diameter of nanowires ranged 50–60 nm and the length was about hundreds of micrometers. The nanowires were single crystal with hexagonal wurzite structure. The peaks of Raman spectra of GaN nanowires appeared broadened and asymmetric compared with those of bulk GaN. PL spectra under excitation at 325 nm showed a strong emission at 3.315 eV from near band-edge transition and a broad weak emission at 2.695 eV related to deep level defects.     

Raman scattering and efficient UV photoluminescence from well-aligned ZnO nanowires epitaxially grown on GaN buffer layer

Optical phonon confinement and efficient UV emission of ZnO nanowires were investigated in use of resonant Raman scattering (RRS) and photoluminescence (PL). The high-quality ZnO nanowires with diameters of 80-100 nm and lengths of several micrometers were epitaxially grown through a simple low-pressure vapor-phase deposition method at temperature 550 degrees C on the precoated GaN(0001) buffer layer. The increasing intensity ratio of n-order longitudinal optical (LO) phonon (A(1)(nLO)/E(1)(nLO)) with increasing scattering order in RRS reveals the phonon quantum confinement as shrinking the diameter of ZnO nanowires. The exciton-related recombination near the band-edge transition dominate the UV emissions at room temperature as well as at low temperature that exhibits almost no other nonstoichiometric defects in the ZnO nanowires.     

Growth and optical properties of wurtzite-type CdS nanocrystals

This paper reports wurtzite-type CdS nanostructures synthesized via a hydrothermal reaction route using dithiol glycol as the sulfur source. The reaction time was found to play an important role in the shape of the CdS nanocrystals: from dots to wires via an oriented attachment mechanism. This work has enabled us to generate nanostructures with controllable geometric shapes and structures and thus optical properties. The CdS nanostructures show a hexagonal wurtzite phase confirmed by X-ray diffraction and show no evidence for a mixed phase of cubic symmetry. The Raman peak position of the characteristic first-order longitudinal optical phonon mode does not change greatly, and the corresponding full width at half-maximum is found to decrease with the CdS shape, changing from nanoparticles to nanowires because of crystalline quality improvement. The photoluminescence measurements indicate tunable optical properties just through a change in the shape of the CdS nanocrystals; i.e., CdS nanoparticles show a band-edge emission at approximately 426 nm in wavelength, while the CdS nanowires show a band-edge emission at approximately 426 nm as well as a weaker trap-state green emission at approximately 530 nm in wavelength. These samples provide an opportunity for the study of the evolution of crystal growth and optical properties, with the shape of the nanocrystals varying from nearly spherical particles to wires.     

Optical and field emission properties of thin single-crystalline GaN nanowires

Thin high-quality gallium nitride (GaN) nanowires were synthesized by a catalytic chemical vapor deposition method. The synthesized GaN nanowires with hexagonal single-crystalline structure had thin diameters of 10-50 nm and lengths of tens of micrometers. The thin GaN nanowires revealed UV bands at 3.481 and 3.285 eV in low-temperature PL measurements due to the recombination of donor-bound excitons and donor-acceptor pairs, respectively. The blue shifts of UV bands in the low-temperature PL measurement were observed, indicating quantum confinement effects in the thin GaN nanowires which have smaller diameters than the exciton Bohr radius, 11 nm. For field emission properties of GaN nanowires, the turn-on field of GaN nanowires was 8.5 V/microm and the current density was about 0.2 mA/cm(2) at 17.5 V/microm, which is sufficient for the applications of field emission displays and vacuum microelectronic devices. Moreover, the GaN nanowires indicated stronger emission stability compared with carbon nanotubes.     

Synthesis and optical properties of CdS nanoribbons

Rapid production of single crystalline CdS nanoribbons with hexagonal wurtzite phase has been achieved by thermal evaporation of CdS powder on Si wafers. The flow rate of the carrier (Ar) gas along with the synthesis temperature plays an important role in defining the size and shape of the CdS nanoribbons. Scanning electron and transmission electron microscopic observations revealed the nanoribbons to have a flat end as well as side surfaces which will make it ideal for optoelectronic devices such as nanolasers and light emitting diodes based on individual nanoribbons. The nanoribbons have widths within 200-400 nm and lengths approximately a few hundred micrometers. Room-temperature photoluminescence measurements show green emission centered at approximately 525 nm which may be ascribed to the near band edge emission. The Raman spectra of the CdS nanoribbons show peaks around 304, 609, 915, and 1220 cm(-1) corresponding to the first-, second-, third-, and fourth-order longitudinal optical phonon modes, respectively.     

Photoluminescence and Raman scattering of ZnO nanorods

Zinc oxide (ZnO) nanorods were synthesized by a simple microemulsion method. The photoluminescence (PL) spectra at room temperature were measured. The strong UV excitonic emission indicates the good optical properties, and the weak deep-level emission reveals very limited structural defects in the crystals. The multiple peaks in the PL spectrum obtained at 15 K are assigned to the donor-bound exciton (DBE), free to bound transition (FB) and FB–LO phonon replicas. The temperature dependence of energy, intensity, and linewidth of each emission band confirms the effect of thermal ionization progress of excitons and nonradiative recombination activated thermally. The nonresonant Raman scattering spectra at room temperature were excited by He–Ne laser (wavelength ～632.8 nm). The perfect wurtzite structure in ZnO nanorods has been verified by the intense E₂ modes, which include low and high frequency vibrations. The possible reasons for the red shift and broadening of vibration modes were studied by the resonant Raman scattering spectra at room temperature. The power-dependence of Raman shift and FWHM shows the laser irradiation effect on the vibrational modes.     

Fabrication and optical property of silicon oxide layer coated semiconductor gallium nitride nanowires

Quasi one-dimensional GaN-SiO(2) nanostructures, with a silicon oxide layer coated on semiconductor GaN nanowires, were successfully synthesized through as-synthesized SiO(2) nanoparticles-assisted reaction. The experimental results indicate that the nanostructure consists of single-crystalline wurtzite GaN nanowire core, an amorphous SiO(2) outer shell separated in the radial direction. These quasi one-dimensional nanowires have the diameters of a few tens of nanometers and lengths up to several hundreds of micrometers. The photoluminescence spectrum of the GaN-SiO(2) nanostructures consists of one broad blue-light emission peak at 480 nm and another weak UV emission peak at 345 nm. The novel method, which may results in high yield and high reproducibility, is demonstrated to be a unique technique for producing nanostructures with controlled morphology.     

Synthesis of GaN nanotip triangle pyramids on 3C-SiC epilayer/Si substrates via an in situ In-doping technique

GaN nanotip triangle pyramids were synthesized on 3C-SiC epilayer via an isoelectronic In-doping technique. The synthesis was carried out in a specially designed two-hot-boat chemical vapor deposition system. In (99.999%) and molten Ga (99.99%) with a mass ratio of about 1:4 were used as the source, and pieces of Si (111) wafer covered with 400-500 nm 3C-SiC epilayer were used as the substrates. The products were analyzed by x-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscopy, selected area electron diffraction, Raman spectroscopy, and photoluminescence measurements. Our results show that the as-synthesized GaN pyramids are perfect single crystal with wurtzite structure, which may have potential applications in electronic/photonic devices.     

纳米晶粒团聚GaN纳米线A1(LO)Raman峰的非对称展宽

Novel GaN nanowires were synthesized by a chemical vapor deposition (CVD) method. The morphology and structure of the nanowires were investigated by SEM, XRD and Raman spectra. Results show that GaN nanowires are formed by aggregated GaN nanocrystals, which is due to the non-uniform precipitation of GaN from catalyst droplet. An asymmetric broadening and shifting to lower frequency of A1(LO) peak are observed in the Raman spectra, which mainly contribute to the Fano interference between scattering from the k=0 optic phonon and electronic continuum scattering from laser-induced electrons.     

ZnxCd1-xS纳米线的可控合成及其可调的光学性质

采用简单的气相沉积法,合成了不同组成的Zn_xCd_1-xS (0< x <1)纳米线. 利用扫描电子显微镜、透射电子显微镜和电子能谱研究了所制得的纳米线的表面形貌和组成. 该方法以Au为催化剂,简单控制起始物质的相对用量和沉积温度,可以获得可控的Zn/Cd 比例. X射线衍射结果表明所制得的Zn_xCd_1-xS纳米线具有纤维锌矿的单晶结构. 根据制得纳米线的表面形貌讨论了纳米线可能的生长机理为“底部生长”机理. 利用拉曼光谱和光致发光光谱研究了Zn_xCd_1-xS纳米线的光学性质,其纵向光学(LO)声子的拉曼位移频率随着组成的变化在ZnS和CdS的拉曼位移频率之间连续变化. 光致发光光谱中同时存在带边发光和缺陷发光. Zn_xCd_1-xS纳米线的带间跃迁的频率可随着组成的调节而调节,纳米线的禁带宽度介于ZnS (3.63 eV)和CdS (2.41 eV)的禁带宽度之间.     

Synthesis of uniform CdS nanowires in high yield and its single nanowire electrical property

Large-scale high quality CdS nanowires with uniform diameter were synthesized by using a rapid and simple solvothermal route. Field emission scan electron microscopy (FESEM) and transmission electron microscopy (TEM) images show that the CdS nanowires have diameter of about 26 nm and length up to several micrometres. High resolution TEM (HRTEM) study indicates the single-crystalline nature of CdS nanowires with an oriented growth along the c-axis direction. The optical properties of the products were characterized by UV-vis absorption spectra, photoluminescence spectra and Raman spectra. The resistivity, electron concentration and electron mobility of single NW are calculated by fitting the symmetric I-V curves measured on single NW by the metal-semiconductor-metal model based on thermionic field emission theory.     

Surface-enhanced Raman scattering and polarized photoluminescence from catalytically grown CdSe nanobelts and sheets

We have successfully fabricated single-crystalline CdSe nanowires, nanobelts, and sheets by a chemical vapor deposition (CVD) method assisted with laser ablation. The synthesized CdSe nanostructures have hexagonal wurtzite phase as characterized by X-ray diffraction (XRD). CdSe nanobelts can range in length from several tens to a hundred micrometers, in thickness from 40 to 70 nm, and a tapered width which is approximately 3 microm at one end and tapers off to approximately 100 nm at a catalytic gold particle. Both selected area electron diffraction (SAED) and high-resolution transmission electron microscopic (HRTEM) measurements show that the single-crystalline hexagonal belts and sheets grew along the [0.1-1.0] direction with side surface of +/-(0 0 0 1) and top surface of +/-(2 -1 -1 0). While the growth mechanism of nanobelts complies with a combination of vapor-liquid-solid (VLS) and vapor-solid (VS) processes, the formation of sheets is primarily based on the VS mechanism. For comparison, the phonon modes of CdSe nanobelts and bulk powder have been measured by surface-enhanced Raman scattering (SERS) and normal Raman scattering (NRS) spectroscopies with off- and near-resonant excitations. A blue-shift of 2.4 cm(-1) for the longitudinal optical (LO) phonon of CdSe nanobelts, relative to bulk CdSe, is attributed to a lattice contraction in the belt structure, which is confirmed by the XRD measurement. Room-temperature microphotoluminescence (PL) at approximately 1.74 eV from single CdSe nanobelts shows a 3-fold enhancement compared to that from bulk CdSe powder and displays a partial polarization dependence of emission angles.     

化学气相沉积法合成高结晶度的三元系Cd1-xZnxS纳米线

以硫化锌、硫化镉和活性碳粉作为反应物,利用化学气相沉积方法成功合成了单晶Cd1-xZnxS纳米线.为了解产物的结构、形貌、组分、微结构以及声子振动模式,对样品进行了扫描电镜、透射电镜、X射线衍射、能谱分析以及拉曼光谱分析.分析显示合成的纳米线为六方铅锌矿结构,生长方向沿着[210]方向,长度均为10μm,直径在80-100 nm之间,x的值约为0.2.拉曼光谱分析显示产物的拉曼峰位与纯CdS相比发生了蓝移.     

化学气相沉积法合成高结晶度的三元系Cd1-xZnxS纳米线

以硫化锌、硫化镉和活性碳粉作为反应物, 利用化学气相沉积方法成功合成了单晶Cd1-xZnxS纳米线. 为了解产物的结构、形貌、组分、微结构以及声子振动模式, 对样品进行了扫描电镜、透射电镜、X射线衍射、能谱分析以及拉曼光谱分析. 分析显示合成的纳米线为六方铅锌矿结构, 生长方向沿着[210]方向, 长度均为10 μm, 直径在80-100 nm之间, x的值约为0.2. 拉曼光谱分析显示产物的拉曼峰位与纯CdS相比发生了蓝移.     

Hydrothermal synthesis and optical study of bunches of ZnO nanowires

Bunches of ZnO nanowires have been synthesized by hydrothermal process with the assistance of cetyltrimethylammonium bromide. The obtained bunches of ZnO nanowires are hexagonal wurtzite structures, and they exhibit orange visible emission ~600 nm. It seems the orange emission ~600 nm is due to the presence of Zn(OH)₂ on the surface of ZnO nanowires. On the basis of material information provided by X-ray diffraction, scanning electron microscopy and photoluminescence, a growth mechanism is proposed for the formation of bunches of ZnO nanowires.     

Growth mechanism and optical properties of aligned hexagonal ZnO nanoprisms synthesized by noncatalytic thermal evaporation

Vertically aligned perfectly hexagonal-shaped ZnO nanoprisms have been grown on a Si(100) substrate via a noncatalytic thermal evaporation process by using metallic zinc powder in the presence of oxygen gas. The as-grown nanoprisms consist of ultra smooth Zn-terminated (0001) facets bounded with the {0110} surfaces. The as-synthesized products are single-crystalline with the wurtzite hexagonal phase and grown along the [0001] direction, as confirmed from the detailed structural investigations. The presence of a sharp and strong nonpolar optical phonon high-E2 mode at 437 cm(-1) in the Raman scattering spectrum further confirms good crystallinity and wurtzite hexagonal phase for the as-grown products. The as-grown nanoprisms exhibit a strong near-band-edge emission with a very weak deep-level emission in the room-temperature and low-temperature photoluminescence measurements, confirming good optical properties for the deposited products. Moreover, systematic time-dependent experiments were also performed to determine the growth process of the grown vertically aligned nanoprisms.     

Synthesis and optical properties of S-doped ZnO nanostructures: nanonails and nanowires

S-doped ZnO nanostructures such as nanonails and nanowires have been synthesized via a simple one-step catalyst-free thermal evaporation process on a large scale. The doping concentration of sulfur into ZnO nanonails and nanowire were 2 atm % and 7.5 atm %, respectively. Studies found that the S-doped ZnO nanonails and nanowires were single-crystalline wurtzite structure and grew along the (001) direction. The average diameters of the nanonails and nanowires were 70 and 50 nm, respectively. Low-temperature photoluminescence spectra of ZnO samples showed two luminescence peaks in the UV and green emission region, respectively. As the concentration of sulfur in the ZnO nanostructures increased, the intensity of the UV emission peak decreased dramatically, and it showed a little blue-shift while the intensity of the green emission increased greatly.     

不同金属缓冲层对GaN薄膜的光学及电学性能的影响

本文以金属Ga和NH3为原料,Al、Ni和Fe为金属缓冲层,采用化学气相沉积法(CVD)在Si(100)衬底上合成了GaN微米薄膜。利用X射线衍射仪(XRD)、场发射扫描电子显微镜(FESEM)、能量弥散X射线谱(EDS)、光致发光光谱(PL)和霍尔效应测试仪(HMS-3000)等对GaN微米薄膜进行表征。结果表明,所有样品均为六方纤锌矿结构;样品均出现了很强的近带边紫外发射峰和半峰宽较大的中心波长为672 nm红光发射峰;不同样品的电学性能差异较大。最后对合成的GaN微米薄膜的可能形成机理进行了简单分析。     

Signatures for Coexistence of Monoclinic and Hexagonal Phases in GaTe Nanoflakes

The burgeoning two-dimensional (2D) layered materials provide a powerful strategy to realize efficient light-emitting devices. Among them, gallium telluride (GaTe) nanoflakes, showing strong photoluminescence (PL) emission from multilayer to bulk crystal, relax the stringent fabrication requirements of nanodevices. However, detailed knowledge on the optical properties of GaTe varies as layer thickness is still missing. Here we perform thickness-dependent PL and Raman spectra, as well as temperature-dependent PL spectra of GaTe nanoflakes. Spectral analysis reveals a spectroscopic signature for the coexistence of both the monoclinic and hexagonal phases in GaTe nanoflakes. To understand the experimental results, we propose a crystal structure where the hexagonal phase is on the top and bottom of nanoflakes while the monoclinic phase is in the middle of the nanoflakes. On the basis of temperature-dependent PL spectra, the optical gap of the hexagonal phase is determined to be 1.849 eV, which can only survive under temperature higher than 200 K with the increasing phonon population. Furthermore, the strength of exciton-phonon interaction of the hexagonal phase is estimated to be 1.24 meV/K. Our results prove the coexistence of dual crystalline phases in multilayer GaTe nanoflakes, which may provoke further exploration of phase transformation in GaTe materials, as well as new applications in 2D light-emitting diodes and heterostructure-based optoelectronics.