静电纺丝技术制备Gd_3Ga_5O_(12)∶Eu~(3+)多孔发光纳米带

采用静电纺丝技术制备了PVP/[Gd(NO3)3+Ga(NO3)3+Eu(NO3)3]复合纳米带,将其进行热处理,得到了Gd3Ga5O12∶Eu3+(简称GGG∶Eu3+)多孔发光纳米带.采用XRD,SEM,TEM,TG-DTA,FTIR和荧光光谱等技术对样品进行了表征.PVP/[Gd(NO3)3+Ga(NO3)3+Eu(NO3)3]复合纳米带为非晶态,经800℃焙烧8h后,获得了单相石榴石型的GGG∶Eu3+纳米带,属于立方晶系,空间群为Ia3d.复合纳米带表面光滑,尺寸均一,平均宽度约10μm,厚度约为100nm,彼此没有交联;经800℃焙烧后GGG∶Eu3+多孔纳米带平均宽度约2.5μm,厚度30nm,长度大于500μm,呈多孔网状多晶结构.当焙烧温度高于700℃时,复合纳米带中DMF、有机物和硝酸盐分解挥发完全,总失重率为93.1%.焙烧温度为800℃时,生成了纯净的无机氧化物.在254nm的紫外光激发下,GGG∶Eu3+纳米带发射出主峰位于591nm的明亮红光,属于Eu3+的5D0→7F1跃迁.对GGG∶Eu3+纳米带形成机理进行了讨论.     

静电纺丝技术制备Y2O3:Eu3+纳米带及其发光性质

采用静电纺丝技术制备了PVP/[Y(NO3)3+Eu(NO3)3]复合纳米带,将其进行热处理,获得了Y2O3:Eu3+纳米带.采用XRD、FTIR、SEM、TEM、荧光光谱等技术对焙烧后的样品进行了表征.结果表明:600℃焙烧即可获得Y2O3:Eu3+纳米带,800 ℃时结晶更为良好,产物属于立方晶系.纳米带表面光滑,由平均直径为30 nm的小颗粒紧密排列而成,为多品结构.随着温度升高,纳米带宽度减小.焙烧800 ℃获得的Y2O3:Eu3+纳米带的发光性质优于焙烧600℃的Y2O3:Eu3+纳米带.与体材料相比,该纳米带的激发光谱Eu3+-O2-电荷迁移态(CTB)发生红移,发射光谱发生蓝移.     

静电纺丝技术制备LaCrO4和LaCrO3纳米带及其光催化性质

采用溶胶-凝胶法结合静电纺丝技术制备了PVP/[La(NO3)3|Cr(NO3)3]复合纳米带, 经热处理后得到LaCrO4纳米带和LaCrO3纳米带. 采用TG-DTA, XRD, SEM和EDS等测试手段对样品进行了表征. 结果表明, PVP/[La(NO3)3-Cr(NO3)3]复合纳米带表面光滑, 宽度为(9.1±1.9) μm, 厚度约385 nm; 经600 ℃焙烧后得到单斜独居石型LaCrO4纳米带, 宽度为(2.5±0.5) μm, 厚度约100 nm; 当焙烧温度为650~800 ℃时得到LaCrO3多孔纳米带, 属正交晶系, Pbnm空间群, 经650 ℃焙烧后得到的LaCrO3纳米带呈多孔结构, 带宽为(2.4±0.5) μm, 厚度约90 nm; 经800 ℃焙烧后得到的LaCrO3纳米带部分破碎形成LaCrO3纳米粒子, LaCrO3纳米带宽度约(1.3±0.4) μm, 厚度约90 nm, LaCrO3纳米粒子粒径约80 nm. 以罗丹明B为目标降解物, 研究了不同焙烧温度下产物的光催化性能, 其中800 ℃焙烧后得到的样品在紫外光照射下对罗丹明B的降解效果最好, 光照200 min后罗丹明B的降解率为94.6%.     

YF3:Eu3+纳米纤维/高分子复合纳米纤维的制备与表征

采用静电纺丝技术制备了Y2O3:Eu3+纳米纤维,使用NH4HF2为氟化剂,经双坩埚法氟化和脱氨后得到YF3:Eu3+纳米纤维,再采用静电纺丝技术制备了YF3:Eu3+纳米纤维/PVP复合纳米纤维. XRD分析表明,立方相的Y2O3:Eu3+氟化后,得到了正交相的YF3:Eu3+纳米纤维,空间群为Pnma;YF3:Eu3+纳米纤维/PVP复合纳米纤维具有明显的YF3:Eu3+的衍射峰. SEM分析表明,YF3:Eu3+纳米纤维与YF3:Eu3+纳米纤维/PVP复合纳米纤维的直径分别为91±11 nm、319±43 nm,表面光滑. 用Shapiro-Wilk方法检验,纤维直径属于正态分布. 荧光光谱分析表明,YF3:Eu3+纳米纤维和YF3:Eu3+纳米纤维/PVP复合纳米纤维的最强发射峰均位于588 nm和595 nm,属于Eu3+的5D0→7F1跃迁,表明Eu3+占据YF3基质中Y3+晶格点的C2对称格位. PVP对YF3:Eu3+发光峰位没有影响,但发光强度降低;YF3:Eu3+的含量与YF3:Eu3+纳米纤维/PVP复合纳米纤维的发光强度成线性关系.     

Gd3Ga5O12∶Eu3+发光纳米晶的燃烧合成及性质

以尿素为燃烧剂,乙二醇为分散剂采用燃烧法制备了Gd3Ga5O12∶Eu3+纳米晶。利用X射线衍射、电镜和荧光光谱对前驱体和热处理后样品的结构、形貌和发光性能进行了表征。XRD结果表明:700℃热处理2 h即可获得立方结构Gd3Ga5O12∶Eu3+纳米晶。根据Scherrer公式估算经700℃和900℃热处理2 h获得的纳米晶的一次性粒径分别为28 nm和42 nm。发射光谱和激发光谱的结果表明:特征发射峰来自于5D0-7FJ跃迁,而来自于Eu3+的5D0→7F1的磁偶极跃迁发射最强;宽激发带主要来自于Eu-O电荷迁移带和Gd3Ga5O12基质吸收。发射强度和激发强度随热处理温度的提高而增强。     

静电纺丝制备Eu(BA)3phen/PANI/PVP光电双功能复合纳米纤维及其性能

采用静电纺丝技术将聚苯胺(PANI)和稀土配合物Eu(BA)3phen掺杂到高分子材料聚乙烯吡咯烷酮(PVP)中, 制备出新型的具有光电双功能的Eu(BA)3phen/PANI/PVP复合纳米纤维. 采用扫描电子显微镜、 X射线能量色散谱仪、 荧光光谱仪及宽频介电松弛谱仪对样品进行了表征. 实验结果表明, 复合纳米纤维直径为(270±31) nm. 在275 nm紫外光激发下, Eu(BA)3phen/PANI/PVP复合纳米纤维发射出主峰位于580, 594和617 nm的红光, 对应于Eu3+的 5D0→7F0, 5D0→7F1和5D0→7F2跃迁. 当m[Eu(BA)3phen]:m(PANI):m(PVP)=15:10:100 时, 复合纳米纤维的荧光发射最强. 复合纤维的电导率随PANI含量的增大而升高. 在m(PANI):m(PVP)=50:100时, 其电导率在高频(106 Hz)下达到1.5×10-6 S/cm.     

静电纺丝技术制备Y_2O_3∶Yb~(3+),Er~(3+)上转换纳米纤维及其表征

采用静电纺丝技术制备了PVA/[Y(NO3)3+Yb(NO3)3+Er(NO3)3]复合纳米纤维,将其在适当的温度下进行热处理,得到Y2O3∶Yb3+,Er3+上转换纳米纤维.XRD分析表明,复合纳米纤维为无定形,Y2O3∶Yb3+,Er3+上转换纳米纤维属于体心立方晶系,空间群为Ia3.SEM分析表明,复合纳米纤维的平均直径约为150nm;随着焙烧温度的升高,纤维直径逐渐减小.经过600℃焙烧后,获得了直径约60nm的Y2O3∶Yb3+,Er3+上转换纳米纤维.TG-DTA分析表明,当焙烧温度高于600℃时,复合纳米纤维中水分、有机物和硝酸盐分解挥发完毕,样品不再失重,总失重率为83%.FTIR分析表明,复合纳米纤维与纯PVA的红外光谱一致,当焙烧温度高于600℃时,生成了Y2O3∶Yb3+,Er3+上转换纳米纤维.该纤维在980nm的半导体激光器激发下发射出中心波长为521,562nm的绿色和656nm的红色上转换荧光,分别对应于Er3+离子的2H11/2/4S3/2→4Il5/2跃迁和4F9/2→4Il5/2跃迁.对Y2O3∶Yb3+,Er3+上转换纳米纤维的形成机理进行了讨论.     

静电纺丝技术制备Y2O3∶Eu3+纳米带及其发光性质

采用静电纺丝技术制备了PVP/[Y(NO₃)₃+Eu(NO₃)₃]复合纳米带,将其进行热处理,获得了Y₂O₃∶Eu³⁺纳米带。采用XRD、FTIR、SEM、TEM、荧光光谱等技术对焙烧后的样品进行了表征。结果表明：600 ℃焙烧即可获得Y₂O₃∶Eu³⁺纳米带,800 ℃时结晶更为良好,产物属于立方晶系。纳米带表面光滑,由平均直径为30 nm的小颗粒紧密排列而成,为多晶结构。随着温度升高,纳米带宽度减小。焙烧800 ℃获得的Y₂O₃∶Eu³⁺纳米带的发光性质优于焙烧600 ℃的Y₂O₃∶Eu³⁺纳米带。与体材料相比,该纳米带的激发光谱Eu³⁺-O^2-电荷迁移态(CTB)发生红移,发射光谱发生蓝移。     

核壳型Gd2O3:Eu3+@Y2O3纳米发光材料的制备与发光性能

采用均相沉淀法制备了均匀球形的Gd2O3:Eu3+@Y2O3核壳结构纳米发光材料.XRD结果表明经过800℃焙烧后样品为立方晶系的Gd2O3,并且晶体发育良好,包覆Y2O3之后Gd2O3的衍射峰位置无明显变化,但随着包覆厚度的增加,出现了立方晶系Y2O3的衍射峰.FTIR谱图观测到了Gd-O,Y-O伸缩振动吸收峰,随着包覆厚度的减少吸收峰增强,认为当包覆层的厚度适当时,颗粒表面的悬空键(断键)变少,Gd(Eu,Y)-O键增多所致.SEM表明包覆前后样品为均匀分散的球形结构.XPS分析进一步证明了表面包覆上了Y2O3.荧光光谱表明:纳米Gd2O3:Eu3+表面包覆不同厚度的基质Y2O3后,均观测到Eu3+离子的特征红光发射,当包覆厚度R=4:1时的发光强度比未包覆的Gd2O3:Eu3+增强,认为核-壳型样品降低了纳米Gd2O3:Eu3+的表面效应给发光强度带来的负面影响.     

静电纺丝技术与硫化技术相结合制备La2Fe2S5亚微米棒

采用静电纺丝技术制备了PVP/[La(NO3)3+Fe(NO3)3]复合纳米纤维,在700℃下焙烧得到LaFeO3纳米纤维,再以CS2作为硫源进行硫化,成功制备了La2Fe2S5亚微米棒。利用XRD,SEM,EDS,宽频介电松弛谱仪等现代分析手段对样品进行了表征。XRD分析表明:将LaFeO3纳米纤维在CS2气氛中于900℃焙烧4 h得到纯相的La2Fe2S5亚微米棒,属于正交晶系,空间群为A21am。SEM分析表明:La2Fe2S5呈亚微米棒结构,直径和长度分别为851±122 nm和3.25±0.99μm。电分析表明:La2Fe2S5亚微米棒是较好的半导体材料。     

Die Kristallstruktur des W3CoB3 und der dazu isotypen Phasen Mo3CoB3, Mo3NiB3 und W3NiB3

Zusammenfassung Mo₃CoB₃, Mo₃NiB₃, W₃CoB₃ und W₃NiB₃ kristallisieren in einem eigenen Typ (W₃CoB₃-Struktur). Das trigonal prismatische Bauelement [T ₆B]^* ist zu Ketten vereinigt, wobei B₃-Gruppen entstehen. Die Phasen sind vermutlich Bor-reicher als obiger Formel entspricht.

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The crystal structure of W₃CoB₃ and the isotypic phases Mo₃CoB₃, Mo₃NiB₃, and W₃NiB₃

Mo₃CoB₃, Mo₃NiB₃, W₃CoB₃, and W₃NiB₃ were found to possess a new type of crystal structure (W₃CoB₃-structure type). Trigonal prismatic groups [T ₆B]^* are linked together forming chains in such a way that B₃-groups occur. These borides do probably exist with a larger amount of boron as to compared with the formula.

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Mit 2 Abbildungen     

γ-Nitro-γ-butyrolacton

γ-Nitro-γ-butyrolactone By oxidation of 3-(1-nitro-2-oxocyclohexyl)propanal ( 1 ) with KMnO₄, besides 3-(1′-nitro-2′-oxocyclohexyl)pripionic acid ( 2 ), the complete hydrolysis product 4-oxononanedioic acid ( 4 ) and the oxidized semi-hydrolysis product 5-(2-nitro-5-oxotetrahydro-2-furyl)pentanoic acid ( 3 ) were formed. The crystalline 3 decomposes at r.t. forming 4 and nitrous gases; its structure was established by X-ray determination.     

Synthesis of γγγ-trifluorocarbonyl compounds

γγγ-Trifluorocarbonyl compounds are easily obtained in a good yield by introduction of the 1,1,1-trifluoroethyl moiety (CF₃-CH₂-) on the -methylene group of a ketone.     

3x-pyrrolizin-3-ones

Condensation of pyrrole-2-dithiocarboxylates with CH acids containing ester groups, in the KOH-DMSO system, was used to prepare previously unknown 1-alkylthio-3H pyrrolizin-3-ones. The latter, treated with secondary amines, are readily converted to the corresponding 1-amino derivatives.     

3-H-pyrrolizin-3-ones

Previously unknown 1-alkylthio-3H-pyrrolizin-3-ones have been obtained by the condensation of pyrrole-2-dithiocarboxylates with CH acids containing ester groupings in the KOH-DMSO system. On treating the products with secondary amines they are readily converted into the corresponding 1-amino derivatives.Irkutsk Branch of the Russian Academy of Sciences, Irkutsk 664033. Translated from Khimiya Geterotsiklicheskikh Soedinenii, No. 7, pp. 919–924, July, 1996. Original article submitted May 2, 1996.     

K3BiSe3, Rb3BiSe3 und Cs3BiSe3 – Substitutionsvarianten des Th3P4-Typs

K₃BiSe₃, Rb₃BiSe₃, and Cs₃BiSe₃ – Derivatives of the Th₃P₄ Structure Type The compounds K₃BiSe₃, Rb₃BiSe₃, and Cs₃BiSe₃ were synthesized by heating mixtures of Bi₂O₃ and the respective alkalicarbonate in a stream of hydrogen saturated by selenium at 850°C. Thin crystals of the compounds appear red in transmitted light. They crystallize isostructural with Na₃AsS₃, space group P2₁3, lattice constants a = 9.771(5) Å, a = 10.161(3) Å, and a = 10.587(5) Å for K₃BiSe₃, Rb₃BiSe₃, and Cs₃BiSe₃, respectively. The Na₃AsS₃ structure type is a derivative of the Th₃P₄ structure type.     

Die Akzeptoreigenschaften von AsCl3, AsBr3, asJ3, SbCl3, SbBr3 und SbJ3

Zusammenfassung Es wurden die Enthalpien der Reaktionen von AsCl₃, AsBr₃, AsJ₃, SbCl₃, SbBr₃ und SbJ₃ mit Tributylphosphat, N,N-Dimethylacetamid und Hexamethylphosphorsäuretriamid bestimmt. Das Verhalten der Addukte bei Gegenwart eines Überschusses der Donoren wird beschrieben.

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Acceptor properties of AsCl₃, AsBr₃, AsI₃, SbCl₃, SbBr₃, and SbI₃

The enthalpies of the reactions of AsCl₃, AsBr₃, AsI₃, SbCl₃, SbBr₃ and SbI₃ with tributylphosphate, N,N-dimethylacetamide and hexamethylphosphoric acid triamide were measured. The behavior of the adducts in the presence of excess donor molecules is described.

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Mit 5 Abbildungen     

Freezing the polarization of CH3NH3PbI3 and CH3NH3PbI3-xClx perovskite films

Thin films of methylammonium lead halides, CH₃NH₃PbI₃ and CH₃NH₃PbI_3-xCl_x, were deposited onto symmetrical microstructured electrode arrays of gold or platinum on Si/SiO₂ wafers. Polarization studies were carried out on perovskite films under vacuum in the dark. For poling, a constant voltage was applied to the samples while the temperature was cycled between 295 K and 4 K. The measured current densities depending on the temperature showed distinct characteristics relating strongly to the crystal phase and the dielectric properties of the perovskite films. Voltage sweeps were carried out at different scan rates at specific temperature intervals after poling. The polarization of the films due to the migration of iodide vacancies in direction of the blocking perovskite/metal interface was frozen almost up to room temperature. Charge carriers were only able to cross the blocking barrier and contribute to the current where the ions have accumulated during poling. All J-V curves showed hysteresis: inverted and regular hysteresis at room temperature and below, respectively. Inverted hysteresis originates from the slow accumulation of ions at the blocking barrier, while regular hysteresis arises from a distortion in the adjacent crystals which will be discussed.