扶手椅型二硫化钼纳米带的电子结构与边缘修饰

采用基于密度泛函理论的第一性原理计算方法, 研究了扶手椅型二硫化钼纳米带的几何构型与电子结构, 发现其稳定性与电子性质敏感地依赖于边缘修饰. 随着边缘修饰的H原子数增加, 纳米带变得更加稳定, 并在间接带隙半导体、半金属和直接带隙半导体之间转变. 纳米带的能带结构和电子态密度显示, 其费米能级附近的能带主要由边缘态贡献. 当二硫化钼纳米带两边用不同数目的H原子修饰时, 纳米带同时具有由这两种修饰引起的边缘态并且两种边缘态的相互影响很小. 研究了三类纳米带带隙与宽度的关系, 对于每个原胞修饰0个或8个H原子的纳米带, 带隙随宽度以3为周期振荡变化; 而对于每个原胞修饰4个H原子的纳米带, 带隙振荡不再具有周期并且振荡幅度变小.     

Armchair型石墨纳米带的电子结构和输运性质

利用第一性原理的电子结构和输运性质计算方法, 研究了扶手椅(armchair)型单层石墨纳米带(具有锯齿边缘)的电子结构和输运性质及其边缘空位缺陷效应. 研究发现, 完整边缘的扶手椅型石墨纳米带是典型的金属性纳米带, 边缘空位缺陷的存在对扶手椅型纳米带能带结构有一定的影响,但并不彻底改变其金属性特征.     

全氟化和部分氟化锗纳米条带电学和磁学性质的理论研究

通过第一性原理计算分别研究了锯齿型和扶手椅型全氟化和部分氟化锗纳米条带的几何结构、稳定性、电学和磁学性质.结果表明,两类全氟化锗纳米条带的最优构型均为椅式构型,并均表现为非磁的半导体性质.全氟化能够有效地增大锗纳米条带体系的带隙,其带隙随着条带宽度的增加而减小.部分氟化的锯齿型锗纳米条带展现出反铁磁半导体的性质,而相应的扶手椅型锗纳米条带则为非磁性的半导体;这些体系的带隙随着氟化程度的增加而增大,其中部分氟化扶手椅型锗纳米条带的带隙展现出三族行为.所有部分氟化的锗纳米条带均与未氟化部分对应的等宽度锗纳米条带表现出几乎相同的电学和磁学行为,表明氟化能够有效调控锗纳米条带的电学和磁学性质.另外,所有氟化的锗纳米带都具有较高的结构稳定性.     

褶皱石墨带的电子输运性质

利用递推格林函数方法,我们研究了褶皱石墨带的电子输运性质.当石墨带具有褶皱时,对于锯齿型石墨带,在第一个范霍夫奇点内,发现了电导隙和伴随着电导振荡的微带.然而,对于金属性扶手型石墨带,在费米能附近仅发现了电导隙,说明扶手型石墨带发生了金属-半导体转变.随着石墨带的褶皱加强,无论是锯齿型还是扶手型石墨带,平均电导都逐渐减小,并趋于0.结果有利于我们理解真实构型石墨带的电子输运性质,并且有助于设计基于石墨带的纳米器件.     

熔融盐法制备富氧空位TiO2纳米片及其光催化性能

氧空位缺陷对半导体材料性能的积极作用引起人们越来越多的关注。本文中,以TiCl4在三氟乙酸中的水解产物为前驱体,通过一步熔融盐法成功合成了具有富氧空位的蓝色TiO2纳米片。由于熔融盐低的氧分压,使前驱体在煅烧过程中消耗了TiO2中的晶格氧从而产生大量的氧空位和Ti3+。紫外-可见漫反射光谱测试表明,蓝色TiO2纳米片的带隙宽度减小至2.69eV,光吸收范围从紫外光区拓宽到可见光区。所制备的蓝色TiO2纳米片表现出优异的光催化活性,在全光谱照射下,对若丹明B的光降解速率是纯TiO2的47.3倍。同时,形成的晶格氟掺杂能有效地稳定氧空位,极大地提高了光生载流子的分离效率。本工作为在半导体氧化物材料内构建氧空位提供了新的思路。     

苯环共价功能化碳纳米管电性理论研究

通过4种键连方式将苯环共价连接到超晶胞为1×1×3的锯齿型单壁碳纳米管CNT(8,0)上.在密度泛函理论基础上,通过Siesta软件计算苯环共价功能化碳纳米管的几何结构、能带结构、态密度和波函数,分析键连方式对碳纳米管电性的影响.结果表明苯环通过4种键连方式共价功能化的碳纳米管都是在Γ点具有直接带隙的半导体.其中直接键连和酰胺键连得到的苯环功能化碳纳米管在费米能级附近产生杂质带,比纯CNT带隙减小约0.4e V.而通过2个亚甲基键连和吡咯烷键连2种方式功能化的碳纳米管,其带隙仅比纯CNT带隙减小0.1~0.15e V.     

纳米晶钛酸铅表面态对介电性能的影响

将醋酸铅、钛酸四丁酯和硬脂酸在熔融状态下混合均匀后置于冷水浴中，使其凝固成凝胶，经不同温度焙烧，制成纳米晶PbTiO3.用X射线衍射光谱、红外光谱对产物进行表征.采用X射线光电子能谱和表面光电压谱对纳米晶PbTiO3表面状态分析,发现材料表面的不完整性主要是由氧空位造成.暴露在粒子表面的主要是金属离子.随着晶粒尺寸的减小，材料表面氧空位缺陷浓度增加，表面光伏效应增强，谱带变宽.纳米晶PbTiO3材料的表面状态对其极化性质有着重要的影响，使其静态介电常数远大于常规材料的静态介电常数.     

溶胶-凝胶法制备的MgxZn1-xO纳米薄膜结构和光学性质

用溶胶-凝胶法制备了不同组分的Mg_xZn_1-xO薄膜.X射线衍射结果表明,薄膜为具有六角纤锌矿结构的纳米薄膜,晶粒尺寸3～5nm,随着Mg进入ZnO晶格,其晶格常数变小.紫外-可见吸收光谱表明,随着Mg含量的增加带隙变宽,自由激子吸收峰明显蓝移.室温光致发光光谱由很强的且与氧空位相关的深能级缺陷发光和较弱的紫外激子发光组成,激子发光强度和缺陷发光强度比随x的增大而减小,表明Mg原子进入ZnO晶格会引起深能级缺陷的增加.Mg_0.03Zn_0.97O薄膜经700℃热氧化后,紫外与可见发光强度比达到30.     

基于无机铅卤钙钛矿的第一性原理分析

运用Material Studio 7.0软件构建模型,对不同卤化物所构成的无机铅卤钙钛矿进行了第一性原理分析,选用了点群结构为Pm3m的CsPbX_3(X=Cl,Br,I)立方晶胞,并在此基础上优化分析了带隙结构和态密度.通过调整不同的交换泛函得到了同一CsPbBr_3单胞优化后的不同的带隙和体模量.并对同一泛函PBE下CsPbCl_3、CsPbBr_3、CsPbI_3的带隙大小、态密度等结果进行了分析,结果显示,随着晶格参数从Cl到I变大,钙钛矿的体模量和电子带隙会变小,离子性也得到了增强.     

铜族金属与完整及氮掺杂石墨烯的相互作用

基于广义梯度密度泛函理论和周期平板模型,研究了铜族金属单原子和双原子簇与完整及氮掺杂石墨烯的结合情况.结果表明,氮掺杂后石墨烯的电子结构特性由半金属性变为金属性;铜族金属在完整及石墨型氮掺杂石墨烯上的吸附较弱,结合能约为0.5eV,而在吡啶型氮掺杂和吡咯型氮掺杂石墨烯上有较强的化学吸附,结合能一般大于1eV;吡咯型氮掺杂后的构型不稳定,金属原子及簇与包含该结构的石墨烯衬底作用时会使其向吡啶型氮掺杂转变,并最终得到基于吡啶型氮掺杂的稳定吸附构型.Mulliken电荷布居分析显示,吸附在吡啶型氮掺杂石墨烯上的金属单原子与金属双原子簇带电性质相反.态密度及轨道分析表明,Cu与吡啶型氮掺杂石墨烯空位处留有悬挂键的三个原子成键,而Au与其中两个C原子成键.     

Single Iron-dimer Catalysts on MoS2 Nanosheet for Potential Nitrogen Activation

Electrocatalytic nitrogen reduction reaction(NRR) is a promising way to produce ammonia(NH₃) at ambient temperature and pressure. Herein, we have constructed single Fe dimer catalysts on a molybdenum disulfide monolayer for potential nitrogen activation. By employing ab initio molecular dynamics simulations, it is suggested that a dual iron-single atom site can be dynamically formed, which exhibits the similar Fe-S-Fe structure as the nitrogenase. We further identify an iron dimer with a sulfur vacancy as the active center for realistic nitrogen activation by the free energy calculations since the bridged sulfur is easy to be released in the form of H₂S during the reduction process. It is shown that N₂ mainly adsorbs on the Fe₂ dimer at the sulfur vacancies in the pattern of side-on configuration, and the nitrogen reduction reaction is proceeded by an enzymatic mechanism. Charge analyses further show that the Fe₂ dimer mainly works as an electron reservoir while MoS₂ substrate with one sulfur vacancy acts as an inert carrier to stabilize the Fe₂ dimer. Overall, our work provides important insights into how N₂ molecules were adsorbed and activated on Fe₂-doped MoS₂, and provides new ideas for the transformation of actual reaction sites during electrochemical reactions.     

MoS2 nanosheet arrays supported on hierarchical porous carbon with enhanced lithium storage properties

MoS₂ nanosheet arrays supported on hierarchical nitrogen-doped porous carbon(MoS₂@C)have been synthesized by a facile hydrothermal approach combined with high-temperature calcination.The hierarchical nitrogen-doped porous carbon can serve as three-dimensional conductive frameworks to improve the electronic transport of semiconducting MoS₂.When evaluated as anode material for lithium-ion batteries,the MoS₂@C exhibit enhanced electrochemical performances compared with pure MoS₂ nanosheets,including high capacity(1305.5 mA h g^-1 at 100 mA g^-1),excellent rate capability (438.4 mA h g^-1 at 1000 mA g^-1).The reasons for the improved electrochemical performances are explored in terms of the high electronic conductivity and the facilitation of lithium ion transport arising from the hierarchical structures of MoS₂@C.     

MoS2/GQDs催化剂的制备及微生物电解池的产氢性能研究

通过水热法合成了一系列MoS₂/GQDs复合材料,并制成碳基复合电极。利用电化学测试手段挑选出最佳电极后用于微生物电解池（MEC）阴极的产氢性能研究。实验结果显示： Na₂MoO₄、半胱氨酸和GQDs的最佳原料配比为375:600:1,制备出的MoS₂/GQDs呈现明显的爆米花样纳米片结构,片层厚度在10 nm左右,当碳纸负载量为1.5 mg·cm^-2时,MoS₂/GQDs碳纸电极的析氢催化能力最佳。在MEC产氢实验中,MoS₂/GQDs阴极MEC的产气量、氢气产率、库仑效率、整体氢气回收率、阴极氢气回收率、电能回收率和整体能量回收率分别为51.15±3.15 mL·cycle^-1、0.401±0.032 m³H₂·m³d^-1、91.16±0.054%、66.64±5.39%、72.44±2.60%、217.26±7.42%和77.37±1.50%,均略高于Pt/C阴极MEC或与之媲美。另外,MoS₂/GQDs具有良好的长期稳定性,且价格便宜,有利于实际应用。     

On the convergence of isolated neutral oxygen vacancy and divacancy properties in metal oxides using supercell models

The properties of isolated neutral oxygen vacancies and divacancies of metal oxides of increasing complexity (MgO, CaO, alpha-Al2O3, and ZnO) have been studied by means of density-functional theory within a supercell periodic approach. Vacancy formation energies, vacancy-vacancy interactions, and geometry rearrangements around these point defects have been investigated in detail. The characterization of the electronic structure of these point defects has been established by analysis of the density of states and of the topology of the electron density and of electron localization function. It is found that the chemical character of the oxide determines the properties of the oxygen vacancies. For the covalent ZnO oxide, a more complex scheme arises in which the relaxation around the oxygen vacancy is much larger leading to the formation of Zn4-like almost metallic particles in the crystal. The relationship of these structures with the crystal shear planes is discussed. The present study shows that supercells containing approximately 200-300 atoms provide converged values for the geometric and electronic structure of oxygen vacancies of these metal oxides in the point defect low concentration limit.     

单层和双层二硫化钼化学气相沉积生长的动力学蒙特卡罗模拟研究

Controllable synthesis of MoS₂ with desired number of layers via chemical vapor deposition (CVD) remains challenging. Hence, it is highly desirable to develop a theoretical model that can be used to predict the single- and multilayer growth of MoS₂ quantitatively, and provide guidelines for experimental fabrication. Herein we have established a kinetic Monte Carlo (kMC) model to predict the CVD growth of mono- and bilayer MoS₂. First, we proposed that the growth rates of layer 1 and layer 2 were governed by the distribution of the adatom concentration, and the growth kinetics of compact triangular MoS₂ followed the kink nucleation-propagation mechanism. The adatom concentration was formulated in terms of adatom flux, effective lifetime of adatoms, growth temperature, binding energies, edge energies, and nucleation criterion. The kink nucleation and propagation were determined by energy barriers of the adatom attachments to the zigzag and armchair edges. We then employed an analytic thermodynamic criterion to extract these parameters. Using the calibrated model, we found that the growth rate of layer 2 strongly depended on the size of layer 1 and decreased monotonically with increasing size of layer 1, and might even become prohibited at the maximum size of layer 1. Furthermore, we analyzed the size and morphology evolutions of bilayer MoS₂ at different growth temperatures and adatom fluxes. Throughout the growth processes of bilayer MoS₂, the morphologies of layers 1 and 2 maintained triangular shapes with compact edges, consistent with the kink nucleation-propagation growth mechanism. Our simulations revealed that the growth of bilayer MoS₂ was promoted by increasing the growth temperature or decreasing the adatom flux, which corroborated the experimental observations. The increase in growth temperature led to reduced adatom concentration at the edge of layer 2 in accordance with the adatom concentration far from the edge of layer 2, resulting in a consistent difference in the adatom concentration to promote the growth of bilayer MoS₂. Similarly, the decrease in adatom flux lowered the difference between the adatom concentrations far from the edge and at the edge of layer 1, decelerating the growth of layer 1. The decelerated growth of layer 1 reduced the difference between the adatom concentrations far from the edge and at the edge of layer 2 to zero, permitting the growth of bilayer MoS₂. To guide the experimental synthesis, we constructed a phase diagram to delineate the permitted or prohibited growth of bilayer MoS₂ at different growth temperatures and adatom fluxes. Hence, this work not only unveils the conditions for the growth of mono- and bi-layer MoS₂, but also provides guidelines for controllable synthesis of MoS₂ with the desired number of layers.     

一维碳纳米管/二维二硫化钼混合维度异质结的原位制备及其电荷转移性能

一维(1D)材料与二维(2D)材料的结合可形成独特的混合维度异质结,其在继承2D/2D范德瓦尔斯异质结的独特物性之外,还具有丰富的堆叠构型,为进一步调控异质结的结构及性能提供了新的可操控自由度。p型1D单壁碳纳米管(SWCNT)与n型2D二硫化钼(MoS₂)的结合,为调控异质结的能带结构及器件性能提供了丰富的选择。本文直接在高密度、手性窄分布的SWCNT定向阵列及无序薄膜表面原位生长MoS₂,制备出高质量1D SWCNT/2D MoS₂混合维度异质结。深入分析形核点的表面形貌与结构,提出了“吸附-扩散-吸附”生长机制,用于解释混合维度异质结的生长。利用拉曼光谱分析,证实SWCNT与MoS₂间存在显著的电荷转移作用,载流子可在界面处快速传输,为后续基于此类1D/2D异质结的新型电子及光电器件的设计与制备提供了新思路。     

Theory of nitrogen doping of carbon nanoribbons: edge effects

Nitrogen doping of a carbon nanoribbon is profoundly affected by its one-dimensional character, symmetry, and interaction with edge states. Using state-of-the-art ab initio calculations, including hybrid exact-exchange density functional theory, we find that, for N-doped zigzag ribbons, the electronic properties are strongly dependent upon sublattice effects due to the non-equivalence of the two sublattices. For armchair ribbons, N-doping effects are different depending upon the ribbon family: for families 2 and 0, the N-induced levels are in the conduction band, while for family 1 the N levels are in the gap. In zigzag nanoribbons, nitrogen close to the edge is a deep center, while in armchair nanoribbons its behavior is close to an effective-mass-like donor with the ionization energy dependent on the value of the band gap. In chiral nanoribbons, we find strong dependence of the impurity level and formation energy upon the edge position of the dopant, while such site-specificity is not manifested in the magnitude of the magnetization.     

Role of Edge Geometry and Magnetic Interaction in Opening Bandgap of Low‐Dimensional Graphene

By using a size‐dependent cohesive energy formula for two‐dimensional coordination materials, the bandgap openings of ideal graphene quantum dots (GQDs) and nanoribbons (GNRs) have been investigated systematically regarding dimension, edge geometry, and magnetic interaction. Results demonstrate that the bandgap openings in GQDs can be dominated by the change of atomic cohesive energy. Relative to zigzag GQDs, the openings in the armchair ones are more substantial, attributed to its edge instability. The change of cohesive energy can also lead to bandgap openings in zigzag and armchair GNRs. The contribution from the interedge magnetic interaction in zigzag GNRs is negligible, while the cohesive‐energy induced openings in armchair GNRs can oscillate according to the so‐called full‐wavelength effect, depending on the width. The model prediction provides physicochemical insight into the bandgap openings in graphene.     

单原子掺杂二硫化钼析氢催化的进展和展望

层状二硫化钼由于具有独特的物理化学特性, 在电化学制氢领域受到广泛关注. 二硫化钼的氢惰性表面导致其在酸性和碱性电解液中的析氢活性都比铂差. 将单原子锚定在二硫化钼中能够有效活化惰性的基面，促使其成为先进的析氢电催化剂. 本文从单原子掺杂的二硫化钼的结构出发, 探讨了单原子在提升活性方面的具体机制, 总结了关于单原子掺杂的二硫化钼的制备方法、 表征手段和最新的研究进展, 以及单原子掺杂所产生的缺陷对于活性提升的重要作用. 最后, 基于单原子掺杂二硫化钼在析氢反应中的最新进展, 总结了该领域中相关催化剂的设计思想和主要挑战.