Siloxane-terminated solubilizing side chains: bringing conjugated polymer backbones closer and boosting hole mobilities in thin-film transistors

We introduce a novel siloxane-terminated solubilizing group and demonstrate its effectiveness as a side chain in an isoindigo-based conjugated polymer. An average hole mobility of 2.00 cm(2) V(-1) s(-1) (with a maximum mobility of 2.48 cm(2) V(-1) s(-1)), was obtained from solution-processed thin-film transistors, one of the highest mobilities reported to date. In contrast, the reference polymer with a branched alkyl side chain gave an average hole mobility of 0.30 cm(2) V(-1) s(-1) and a maximum mobility of 0.57 cm(2) V(-1) s(-1). This is largely explained by the polymer packing: our new polymer exhibited a π-π stacking distance of 3.58 ?, while the reference polymer showed a distance of 3.76 ?.     

Synthetic principles directing charge transport in low-band-gap dithienosilole-benzothiadiazole copolymers

Given the fundamental differences in carrier generation and device operation in organic thin-film transistors (OTFTs) and organic photovoltaic (OPV) devices, the material design principles to apply may be expected to differ. In this respect, designing organic semiconductors that perform effectively in multiple device configurations remains a challenge. Following "donor-acceptor" principles, we designed and synthesized an analogous series of solution-processable π-conjugated polymers that combine the electron-rich dithienosilole (DTS) moiety, unsubstituted thiophene spacers, and the electron-deficient core 2,1,3-benzothiadiazole (BTD). Insights into backbone geometry and wave function delocalization as a function of molecular structure are provided by density functional theory (DFT) calculations at the B3LYP/6-31G(d,p) level. Using a combination of X-ray techniques (2D-WAXS and XRD) supported by solid-state NMR (SS-NMR) and atomic force microscopy (AFM), we demonstrate fundamental correlations between the polymer repeat-unit structure, molecular weight distribution, nature of the solubilizing side-chains appended to the backbones, and extent of structural order attainable in p-channel OTFTs. In particular, it is shown that the degree of microstructural order achievable in the self-assembled organic semiconductors increases largely with (i) increasing molecular weight and (ii) appropriate solubilizing-group substitution. The corresponding field-effect hole mobilities are enhanced by several orders of magnitude, reaching up to 0.1 cm(2) V(-1) s(-1) with the highest molecular weight fraction of the branched alkyl-substituted polymer derivative in this series. This trend is reflected in conventional bulk-heterojunction OPV devices using PC(71)BM, whereby the active layers exhibit space-charge-limited (SCL) hole mobilities approaching 10(-3) cm(2) V(-1) s(-1), and yield improved power conversion efficiencies on the order of 4.6% under AM1.5G solar illumination. Beyond structure-performance correlations, we observe a large dependence of the ionization potentials of the polymers estimated by electrochemical methods on polymer packing, and expect that these empirical results may have important consequences on future material study and device applications.     

Synthesis, characterization, and application of indolo[3,2-b]carbazole semiconductors

The synthesis, characterization, and field-effect transistor (FET) properties of new indolo[3,2-b]carbazoles are described. In particular, an extensive characterization of their crystal structures has revealed the importance of the nature of the side chains (alkyl, phenyl, thienyl substituents) on their solid-state organization. These organic materials have exhibited p-type FET behavior with hole mobilities as high as 0.2 cm2 V(-1) s(-1) with an on/off current ratio higher than 10(6). Best results were obtained with phenyl-substituted indolo[3,2-b]carbazoles since the presence of phenyl substituents seems to allow efficient overlap between the oligomeric molecules. More importantly, FET properties were kept constant during several months in air.     

平面型给-受体共轭聚合物的合成及在体异质结聚合物太阳能电池中的应用

设计合成了主链为聚2,8-{5,11-二烷基吲哚[3,2-b]咔唑}-4,7[2,5-噻吩]-二-5,6-二烷氧基-2,1,3-苯并噻二唑, 具有不同侧链的2种平面型给-受体共轭聚合物(QP-2和QP-3), 研究了其热学、光物理和光伏性质. 用聚合物-PC₇₁BM([6,6]-苯基C₇₁丁酸甲酯)共混物作为活性层构筑了本体异质结聚合物太阳能电池. 其中以QP-3为给体、以PC₇₁BM为受体的光伏电池能量转换效率最高达到2.59%, 开路电压为0.72 V, 短路电流为9.24 mA/cm², 填充因子为0.38. XRD结果表明, 平面型共轭聚合物具有较好的结晶性, 原子力显微镜(AFM)显示平面型共轭聚合物易于发生微观相分离.     

Influence of the alkyl and alkoxy side chains on the electronic structure and charge-transport properties of polythiophene derivatives

Density Functional Theory has been used to study the structural, electronic and charge-transport properties of two regio-regular head-to-tail polythiophene derivatives, i.e. poly(3-hexyl-thiophene), P3HT, and poly(3-oxyhexyl-thiophene), P3OHT. The effect of substituents on the electronic structure was analyzed by means of bandwidth, bandgap, effective mass, total and partial densities of states and crystal orbital overlap populations. Electronic couplings were estimated from band diagrams as the splitting of the valence band. The neutral and cationic states of isolated oligomers were optimized using the supercell approximation. The hole-transfer rates and mobilities were evaluated according to Marcus's theory. Results provide a compelling illustration of the effect of side chains on the crystal packing, electronic structure and charge-transport properties. Thus, the hole mobility calculated for the alkyl derivative was 0.15 cm(2) V(-1) s(-1) (experimental mobility is 0.10 cm(2) V(-1) s(-1)), while the alkoxy derivative has a theoretical mobility of 0.49 cm(2) V(-1) s(-1). The obtained results hopefully could motivate experimentalists to try out P3OHT for an improved charge carrier mobility.     

Annealing-free high-mobility diketopyrrolopyrrole-quaterthiophene copolymer for solution-processed organic thin film transistors

A donor-acceptor polymer semiconductor, PDQT, comprising diketopyrrolopyrrole (DPP) and β-unsubstituted quaterthiophene (QT) for organic thin film transistors (OTFTs) is reported. This polymer forms ordered layer-by-layer lamellar packing with an edge-on orientation in thin films even without thermal annealing. The strong intermolecular interactions arising from the fused aromatic DPP moiety and the DPP-QT donor-acceptor interaction facilitate the spontaneous self-assembly of the polymer chains into close proximity and form a large π-π overlap, which are favorable for intermolecular charge hopping. The well-interconnected crystalline grains form efficient intergranular charge transport pathways. The desirable chemical, electronic, and morphological structures of PDQT bring about high hole mobility of up to 0.97 cm(2)/(V·s) in OTFTs with polymer thin films annealed at a mild temperature of 100 °C and similarly high mobility of 0.89 cm(2)/(V·s) for polymer thin films even without thermal annealing.     

Molecular packing of high-mobility diketo pyrrolo-pyrrole polymer semiconductors with branched alkyl side chains

We describe a series of highly soluble diketo pyrrolo-pyrrole (DPP)-bithiophene copolymers exhibiting field effect hole mobilities up to 0.74 cm(2) V(-1) s(-1), with a common synthetic motif of bulky 2-octyldodecyl side groups on the conjugated backbone. Spectroscopy, diffraction, and microscopy measurements reveal a transition in molecular packing behavior from a preferentially edge-on orientation of the conjugated plane to a preferentially face-on orientation as the attachment density of the side chains increases. Thermal annealing generally reduces both the face-on population and the misoriented edge-on domains. The highest hole mobilities of this series were obtained from edge-on molecular packing and in-plane liquid-crystalline texture, but films with a bimodal orientation distribution and no discernible in-plane texture exhibited surprisingly comparable mobilities. The high hole mobility may therefore arise from the molecular packing feature common to the entire polymer series: backbones that are strictly oriented parallel to the substrate plane and coplanar with other backbones in the same layer.     

A new thiophene substituted isoindigo based copolymer for high performance ambipolar transistors

A novel thiophene substituted isoindigo and its copolymer with benzothiadiazole have been synthesized. The polymer with low lying LUMO energy levels exhibits excellent ambipolar behavior in field effect transistors with both hole and electron mobilities recorded over 0.1 cm(2) V(-1) s(-1).     

High performance weak donor-acceptor polymers in thin film transistors: effect of the acceptor on electronic properties, ambipolar conductivity, mobility, and thermal stability

We have studied the electronic, physical, and transistor properties of a family of donor-acceptor polymers consisting of diketopyrrolopyrrole (DPP) coupled with different accepting companion units in order to determine the effects of donor-acceptor interaction. Using the electronically neutral benzene (B), the weakly accepting benzothiadiazole (BT), and the strongly accepting benzobisthiadiazole (BBT), the accepting strength of the companion unit was systematically modulated. All polymers exhibited excellent transistor performance, with mobilities above 0.1 cm(2)V(-1)s(-1), even exceeding 1 cm(2)V(-1)s(-1) for one of the BBT-containing polymers. We find that the BBT is the strongest acceptor, enabling the BBT-containing polymers to be strongly ambipolar. The BBT moiety also strengthens interchain interactions, which provides higher thermal stability and performance for transistors with BBT-containing polymers as the active layer.     

Bithiophene-imide-based polymeric semiconductors for field-effect transistors: synthesis, structure-property correlations, charge carrier polarity, and device stability

Developing new high-mobility polymeric semiconductors with good processability and excellent device environmental stability is essential for organic electronics. We report the synthesis, characterization, manipulation of charge carrier polarity, and device air stability of a new series of bithiophene-imide (BTI)-based polymers for organic field-effect transistors (OFETs). By increasing the conjugation length of the donor comonomer unit from monothiophene (P1) to bithiophene (P2) to tetrathiophene (P3), the electron transport capacity decreases while the hole transport capacity increases. Compared to the BTI homopolymer P(BTimR) having an electron mobility of 10(-2) cm(2) V(-1) s(-1), copolymer P1 is ambipolar with balanced hole and electron mobilities of ～10(-4) cm(2) V(-1) s(-1), while P2 and P3 exhibit hole mobilities of ～10(-3) and ～10(-2) cm(2) V(-1) s(-1), respectively. The influence of P(BTimR) homopolymer M(n) on film morphology and device performance was also investigated. The high M(n) batch P(BTimR)-H affords more crystalline film microstructures; hence, 3× increased electron mobility (0.038 cm(2) V(-1) s(-1)) over the low M(n) one P(BTimR)-L (0.011 cm(2) V(-1) s(-1)). In a top-gate/bottom-contact OFET architecture, P(BTimR)-H achieves a high electron mobility of 0.14 cm(2) V(-1) s(-1), only slightly lower than that of state-of-the-art n-type polymer semiconductors. However, the high-lying P(BTimR)-H LUMO results in minimal electron transport on exposure to ambient. Copolymer P3 exhibits a hole mobility approaching 0.1 cm(2) V(-1) s(-1) in top-gate OFETs, comparable to or slightly lower than current state-of-the-art p-type polymer semiconductors (0.1-0.6 cm(2) V(-1) s(-1)). Although BTI building block incorporation does not enable air-stable n-type OFET performance for P(BTimR) or P1, it significantly increases the OFET air stability for p-type P2 and P3. Bottom-gate/top-contact and top-gate/bottom-contact P2 and P3 OFETs exhibit excellent stability in the ambient. Thus, P2 and P3 OFET hole mobilities are almost unchanged after 200 days under ambient, which is attributed to their low-lying HOMOs (>0.2 eV lower than that of P3HT), induced by the strong BTI electron-withdrawing capacity. Complementary inverters were fabricated by inkjet patterning of P(BTimR)-H (n-type) and P3b (p-type).     

Synthesis,characterization, and tunable semiconducting properties of aza-BODIPY derived polycyclic aromatic dyes

Azadipyrromethene derived polycyclic aromatic complexes(HBPs) containing thirteen fused rings have been synthesized,which show highly selective intense absorption in the near infrared spectrum(NIR) region with high photo-and thermo-stability.The periphery alkoxy and alkyl substituents greatly affect their molecular packing structures in thin films and their thin film transistor performances. With the simple changes of the alkyl substituents, the packing structures changed from discrete-grain with H-aggregation type absorption to lamellar packing with J-aggregation type absorption, and the semiconducting properties were modulated from p-type to interesting ambipolar-type in solution-processed organic field effect transistors(OFETs) with hole and electron mobilities reaching to 0.42 and 0.17 cm~2 V~(-1) s~(-1), respectively.     

High-performance field-effect transistors based on Langmuir-Blodgett films of cyclo[8]pyrrole

We demonstrate the field-effect transistors (FETs) made of cyclo[8]pyrrole thin films prepared by the Langmuir-Blodgett (LB) method. The cyclo[8]pyrrole molecule possesses a 30-pi-electron system and narrower highest-occupied molecular orbital-lowest-unoccupied molecular orbital energy gap (0.63 eV), forms a stable, reproducible monolayer at the air-water interface, and transfers onto a substrate with a nearly unity transfer ratio and face-to-face configuration due to its strong pi-pi interaction. The LB films are uniform characterized by atomic force microscopy and in ordered form confirmed by X-ray diffraction. The FET exhibited high performances with one of the highest hole mobilities (0.68 cm2 V(-1) s(-1)) for thin-film transistors and a high on/off ratio, implying a promising material in the FET family.     

Band edge modulated conjugated polymers for oxidation prevention

The impact of electron transfer (ET) from a series of band edge modulated polymers to atmospheric oxygen is examined in connection with substrate oxidation prevention. Polymers with the highest occupied molecular orbital (HOMO) energy level below and above the oxygen energy level were tested and the former showed better efficiency. Furthermore, the oxidation prevention efficiency of a polymer with lower HOMO increased by two orders of magnitude, when the pores on the film were filled with spherical molecules, [6,6]-phenyl-C61-butyric acid methyl ester. We found that the polymer surface hydrophobicity has little or no influence on oxidation prevention. It is interesting to note that a polymer with a hole mobility of 8 × 10(-10) cm(2) V(-1) s(-1) showed a two-fold increase in oxidation prevention efficiency compared to a polymer with a hole mobility of 6 × 10(-5) cm(2) V(-1) s(-1). Over all, from the concerted approach, we conclude that a polymer devoid of pores with the HOMO energy level below oxygen and low charge carrier mobility is a suitable candidate for prevention of substrate oxidation/corrosion.     

Unusual nondispersive ambipolar carrier transport and high electron mobility in amorphous ter(9,9-diarylfluorene)s

Nondispersive ambipolar carrier transport with comparably high electron and hole mobilities for amorphous molecular solids that are composed of only a single type of chromophores was observed for the first time in amorphous ter(9,9-diarylfluorene)s. High hole and electron mobilities over 10-3 cm2/(V.s) can be achieved with these terfluorenes. In particular, the electron mobility observed represents the highest ever reported for amorphous molecular solids.     

Lamination method for the study of interfaces in polymeric thin film transistors

A method for the fabrication of polymeric thin-film transistors (TFTs) by lamination is described. Poly(dimethylsiloxane) stamps were used to delaminate thin films of semiconducting polymers from silicon wafers coated with a self-assembled monolayer (SAM) formed from octyltrichlorosilane. These supported films were laminated onto electrode structures to form coplanar TFTs. The fabrication process was used to make TFTs with poly(3-hexylthiophene), P3HT, and poly[5,5'-bis(3-dodecyl-2-thienyl)-2,2'-bithiophene], PQT-12. TFTs, where these polymers were laminated onto gate dielectrics coated with SAMs from octyltrichlorosilane, had effective field-effect mobilities of 0.03 and 0.005 cm2/(V s), respectively. TFTs where PQT-12 was laminated onto gate dielectrics that were not coated with a SAM also had mobility of 0.03 cm2/(V s). In contrast, TFTs fabricated by spin-coating PQT-12 onto the same structure had mobilities ranging from 10-3 to 10-4 cm2/(V s). These results suggest that the lower mobilities of polymer TFTs made with hydrophilic gate dielectrics are caused by molecular ordering in the semiconducting film rather than electronic effects of dipolar groups at the interface.     

5,11-Conjugation-extended low-bandgap anthradithiophene-containing polymer exhibiting enhanced thin-film order and field-effect mobility

Anthradithiophene was incorporated in a polymer structure by extending its conjugation from the 5,11-positions, through in situ desilylation followed by acetylenic coupling with a dibromo-monomer. The resulting polymer showed largely redshifted order in a thin film as well as order in thin film, forming lamellar structures out of the substrate plane. As a result, it exhibits field-effect hole mobilities, on the order of 0.1 cm(2) V(-1) s(-1), a ten to hundred-fold improvement as compared to previous acene-containing polymers.     

Rational Design of Ambipolar Organic Semiconductors: Is Core Planarity Central to Ambipolarity in Thiophene–Naphthalene Semiconductors?

Herein, we report a new family of naphthaleneamidinemonoimide-fused oligothiophene semiconductors designed for facile charge transport in organic field-effect transistors (OFETs). These molecules have planar skeletons that induce high degrees of crystallinity and hence good charge-transport properties. By modulating the length of the oligothiophene fragment, the majority carrier charge transport can be switched from n-type to ambipolar behavior. The highest FET performance is achieved for solution-processed films of 10-[(2,2'-bithiophen)-5-yl]-2-octylbenzo[lmn]thieno[3',4':4,5]imidazo[2,1-b][3,8]phenanthroline-1,3,6(2H)-trione (NDI-3 Tp), with optimized film mobilities of 2×10(-2) and 0.7×10(-2) cm(2) V(-1) s(-1) for electrons and holes, respectively. Finally, these planar semiconductors are compared with their twisted-skeleton counterparts, which exhibit only n-type mobility, in order to understand the origin of the ambipolarity in this new series of molecular semiconductors.     

Borazine materials for organic optoelectronic applications

Borazine materials have been demonstrated to be a new class of multifunctional and thermally stable materials with high electron (10(-3) cm2 V(-1) s(-1)) and moderate hole (10(-4) cm2 V(-1) s(-1)) mobilities for applications in electroluminescent devices.     

Synthesis, properties, and OFET characteristics of 5,5'-di(2-azulenyl)-2,2'-bithiophene (DAzBT) and 2,5-di(2-azulenyl)-thieno[3,2-b]thiophene (DAzTT)

Two azulene-based π-conjugated systems, 5,5'-di(2-azulenyl)-2,2'-bithiophene and 2,5-di(2-azulenyl)-thieno[3,2-b]thiophene, were constructed via Suzuki-Miyaura cross-coupling reactions. The crystal structures of both revealed an edge-to-face orientation in a well-defined herringbone packing. The molecules stood nearly perpendicular to the substrate in the film form, with features of an organic field-effect transistor at hole mobilities of up to 5.0 × 10(-2) cm(2) V(-1) s(-1).     

Organic field-effect transistors from solution-deposited functionalized acenes with mobilities as high as 1 cm2/V x s

We present the device parameters for organic field-effect transistors fabricated from solution-deposited films of functionalized pentacene and anthradithiophenes. These materials are easily prepared in one or two steps from commercially available starting materials and are purified by simple recrystallization. For a solution-deposited film of functionalized pentacene, hole mobility of 0.17 cm2/V.s was measured. The functionalized anthradithiophenes showed behavior strongly dependent on the substituents, with hole mobilities as high as 1.0 cm2/V.s.